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1. 发明公开

EP2476207A1 OSCILLATOR HAVING NEGATIVE DIFFERENTIAL RESISTANCE DEVICE FOR GENERATING ELECTROMAGNETIC WAVE 有权
标题翻译：与负微分电阻用于产生电磁波器件振荡器
公开(公告)号：EP2476207A1
公开(公告)日：2012-07-18
申请号：EP10760110.6
申请日：2010-09-03
申请人： Canon Kabushiki Kaisha
发明人： SEKIGUCHI, Ryota , ITSUJI, Takeaki
IPC分类号： H03B7/08 , H03B7/14
CPC分类号： H03B7/14 , H03B7/08
摘要： An oscillator having a negative resistance device and a resonator includes: a transmission line connected to the negative resistance device, a three-terminal device including a first terminal connected to the signal line side of the transmission line at a terminal part, a second terminal connected to the grounding line side of the transmission line and a third terminal receiving a control signal applied thereto; a first regulation unit for regulating the control signal to be applied to the third terminal; and a second regulation unit for regulating the voltage to be applied to the second terminal, the first and the second regulation unit being adapted to regulate respectively the control signal and the voltage so as to make the characteristic impedance of the transmission line and the impedance between the first and the second terminal show an impedance matching. The power consumption rate of the stabilizing circuit can be reduced.

2. 发明授权

EP2609466B1 ELECTROMAGNETIC THZ WAVE GENERATING DEVICE, ELECTROMAGNETIC THZ WAVE DETECTING DEVICE, AND TIME-DOMAIN SPECTROSCOPY APPARATUS 有权
标题翻译：装置于产生电磁THz波装置电磁检测中的太赫兹波和时域光谱仪器
公开(公告)号：EP2609466B1
公开(公告)日：2014-07-16
申请号：EP11760875.2
申请日：2011-08-08
申请人： Canon Kabushiki Kaisha
发明人： SEKIGUCHI, Ryota , KAJIKI, Kousuke
IPC分类号： G02F1/377 , G01N21/35 , G01N21/47
CPC分类号： G02F1/377 , G01N21/35 , G01N21/3586 , G01N21/4795 , G02F2001/374 , G02F2203/13

3. 发明公开

EP2198491A1 LASER DEVICE 有权
标题翻译：激光器件
公开(公告)号：EP2198491A1
公开(公告)日：2010-06-23
申请号：EP08828581.2
申请日：2008-08-27
申请人： Canon Kabushiki Kaisha
发明人： SEKIGUCHI, Ryota
IPC分类号： H01S1/02 , H01S5/227 , H01S5/34 , H01S5/10
CPC分类号： H01S1/02 , B82Y20/00 , H01S5/1046 , H01S5/20 , H01S5/3402
摘要： Provided is a long wavelength laser of which the operating point is stabilized and the laser oscillation is stabilized. The long wavelength laser comprises a resistor element provided to a portion where the surface current is maximum in a surface plasmon waveguide to stabilize a potential difference between a first cladding and a second cladding in the surface plasmon waveguide.

4. 发明公开

EP2476205A1 OSCILLATOR HAVING NEGATIVE RESISTANCE ELEMENT 有权
标题翻译：具有负电阻元件的振荡器
公开(公告)号：EP2476205A1
公开(公告)日：2012-07-18
申请号：EP10749690.3
申请日：2010-08-13
申请人： Canon Kabushiki Kaisha
发明人： OUCHI, Toshihiko , SEKIGUCHI, Ryota
IPC分类号： H03B7/08
CPC分类号： H03B9/12
摘要： An oscillator has a negative resistance element and a resonator along with a capacitor electrically connected in parallel with the negative resistance element relative to a power bias circuit, a capacitance of the capacitor being so selected as to suppress any parasitic oscillation due to the power bias circuit and allow oscillation at a resonance frequency due to the negative resistance element and the resonator.

5. 发明公开

EP2321852A1 RECTIFIER 审中-公开
标题翻译：整流器
公开(公告)号：EP2321852A1
公开(公告)日：2011-05-18
申请号：EP09788011.6
申请日：2009-07-27
申请人： Canon Kabushiki Kaisha
发明人： SEKIGUCHI, Ryota
IPC分类号： H01L31/0224 , H01L31/0304 , H01L31/108 , G01N21/35 , H01L29/861 , H01L29/872
CPC分类号： H01L31/022408 , H01L27/0727 , H01L29/47 , H01L31/0304 , H01L31/1085 , H01L31/11 , Y02E10/544
摘要： Provided is a rectifier such as a detector in which a cutoff frequency may be increased in a view point different from the reduction in size of the structure. The rectifier includes: a Schottky barrier portion (101) including a Schottky electrode; (111) a barrier portion (102) having a rectifying property with respect to a majority carrier in the Schottky barrier portion; and an ohmic electrode (103) in electrical contact with the barrier portion having the rectifying property, in which each of the Schottky barrier portion and the barrier portion.having the. rectifying property has an asymmetrical band profile whose gradient on one side is larger than a gradient of another side, and the Schottky barrier portion and the barrier portion having the rectifying property are connected to each other so that the steep gradient side of the band profile is located on a side of the Schottky electrode.

6. 发明授权

EP2476205B1 OSCILLATOR HAVING NEGATIVE RESISTANCE ELEMENT 有权
标题翻译：具有负电阻元件的振荡器
公开(公告)号：EP2476205B1
公开(公告)日：2014-07-16
申请号：EP10749690.3
申请日：2010-08-13
申请人： Canon Kabushiki Kaisha
发明人： OUCHI, Toshihiko , SEKIGUCHI, Ryota
IPC分类号： H03B7/08
CPC分类号： H03B9/12

7. 发明公开

EP2732476A1 DIODE ELEMENT AND DETECTING DEVICE 审中-公开
标题翻译： DIODENELEMENT UND DETEKTOR
公开(公告)号：EP2732476A1
公开(公告)日：2014-05-21
申请号：EP12741393.8
申请日：2012-06-27
申请人： Canon Kabushiki Kaisha
发明人： SEKIGUCHI, Ryota , KOTO, Makoto
IPC分类号： H01L31/108 , H01L31/0224 , H01L29/872 , H01L29/06
CPC分类号： H01L29/872 , H01L27/14 , H01L27/14612 , H01L27/14643 , H01L29/0619 , H01L29/456 , H01L31/022408 , H01L31/108
摘要： Provided is a diode element, a detecting device, and the like which solve problems of a conventional lateral diode element. In the conventional element, a semiconductor interface appears in current path between two electrodes on a surface thereof, and thus noise caused by the interface is large. The diode element includes: a first-conductive-type low carrier concentration layer (103); a first-conductive-type high carrier concentration layer (102); and a Schottky electrode (104) and an ohmic electrode (105) which are formed on a semiconductor surface. The low carrier layer (103) has a carrier concentration that is lower than that of the high carrier layer (102). The diode element includes a first-conductive-type impurity introducing region (106) formed below the ohmic electrode (105), and includes a second-conductive-type impurity introducing region (107) so as not to be in electrical contact with the Schottky electrode (104) on the semiconductor surface between the Schottky electrode (104) and the ohmic electrode (105). The second-conductive-type region (107) is in contact with the first-conductive-type region (106).
摘要翻译：提供了解决常规侧面二极管元件的问题的二极管元件，检测装置等。在常规元件中，半导体界面出现在其表面上的两个电极之间的电流路径中，因此由界面引起的噪声较大。二极管元件包括：第一导电型低载流子浓度层; 第一导电型高载流子浓度层; 以及形成在半导体表面上的肖特基电极和欧姆电极。低载体层的载流子浓度低于高载流子层的载流子浓度。二极管元件包括形成在欧姆电极下方的第一导电型杂质导入区域，并且包括第二导电型杂质导入区域，以便不与肖特基与肖特基二极管之间的半导体表面上的肖特基电极电接触欧姆第二导电型区域与第一导电型区域接触。

8. 发明授权

EP2412092B1 OSCILLATOR 有权
标题翻译： OSC
公开(公告)号：EP2412092B1
公开(公告)日：2013-01-16
申请号：EP10714371.1
申请日：2010-03-23
申请人： Canon Kabushiki Kaisha
发明人： KOYAMA, Yasushi , SEKIGUCHI, Ryota
IPC分类号： H03B7/14
CPC分类号： H03B7/08 , H03B7/14

9. 发明公开

EP1867038A1 FREQUENCY TUNABLE OSCILLATOR 审中-公开
标题翻译：频率可调振荡器装置
公开(公告)号：EP1867038A1
公开(公告)日：2007-12-19
申请号：EP06730940.1
申请日：2006-03-27
申请人： CANON KABUSHIKI KAISHA
发明人： SEKIGUCHI, Ryota , OUCHI, Toshihiko
IPC分类号： H03B7/14
CPC分类号： H03B5/1847 , H01P7/088 , H03B7/143 , H03B2200/0022
摘要： There is provided a frequency tunable oscillator that has less degradation of oscillation characteristics due to a parasitic reactance component or the like without mounting therein a lumped constant element such as a variable capacitance element. The frequency tunable oscillator includes a negative resistance element and a resonator which together form a feedback circuit. The frequency tunable oscillator further includes in at least a part of the feedback circuit, a distributed constant material so configured as to have a distributed constant such that an electrical length in the resonator is modulated, and a modification means for externally modifying the distributed constant material, wherein the oscillation frequency can be varied through the external modification by the modification means.

10. 发明公开

EP3087606A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP3087606A1
公开(公告)日：2016-11-02
申请号：EP14833293.5
申请日：2014-12-22
申请人： Canon Kabushiki Kaisha
发明人： SEKIGUCHI, Ryota , OUCHI, Toshihiko
IPC分类号： H01L27/144 , G01N21/3581 , H01L31/108 , H01L31/112 , H01L31/18 , H01L29/872 , H01L27/07
CPC分类号： H01L31/1123 , G01J1/44 , G01J2001/4446 , G01N21/3581 , H01L27/0629 , H01L27/1463 , H01L27/14649 , H01L27/14689 , H01L29/66143 , H01L29/872 , H01L31/1085 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.
摘要翻译：本发明提供一种半导体装置，其特征在于，具备：硅基板，检测元件，以及配置在所述硅基板上的p型和n型MOS晶体管，所述检测元件具有半导体层，电极以及配置在其间的肖特基势垒，层设置在具有与p型或n型MOS晶体管的源极或漏极中的杂质扩散层相同组成和高度的层的相同层上，具有相同组成的硅衬底中的区域和高度与沟道区域的高度一致，在硅衬底中，恰在p型MOS晶体管或n型MOS晶体管的栅氧化膜下方，或在硅衬底中具有与位于p型和n型MOS晶体管之间的场氧化膜正下方的区域。

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