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    • 2. 发明公开
    • PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE READING APPARATUS
    • 光电转换装置和图像读取装置
    • EP3249690A3
    • 2018-03-07
    • EP17172711.8
    • 2017-05-24
    • CANON KABUSHIKI KAISHA
    • SUZUKI, TatsuyaKOIZUMI, ToruOGURA, MasanoriSUZUKI, TakanoriIBA, Jun
    • H01L27/146
    • H01L27/14605H01L27/1463H01L27/14643H04N1/02805
    • A photoelectric conversion apparatus includes a semiconductor substrate (400) having one principle surface including recessed portions (106), and insulation bodies (201) in the recessed portions. The semiconductor substrate includes photoelectric conversion elements (110) each of which includes a first semiconductor region (101) of a first conductivity type, a second semiconductor region (102) of a second conductivity type, and a third semiconductor region (103) of the second conductivity type which has at least a portion nearer to the principle surface relative to the second semiconductor region. The second semiconductor region has a polarity of signal charge. The second semiconductor region is in contact with the first and third semiconductor regions. Signal charge paths are disposed between the recessed portions in a cross section perpendicular to the principle surface. At least one of the second and third semiconductor regions is positioned in directions of at least two of the signal charge paths.
    • 一种光电转换设备包括:半导体衬底(400),其具有包括凹陷部分(106)的一个主表面以及凹陷部分中的绝缘体(201)。 半导体衬底包括光电转换元件(110),每个光电转换元件包括第一导电类型的第一半导体区域(101),第二导电类型的第二半导体区域(102)和第三导电类型的第三半导体区域(103) 第二导电类型,其具有相对于第二半导体区域更靠近主表面的至少一部分。 第二半导体区域具有信号电荷的极性。 第二半导体区域与第一和第三半导体区域接触。 信号电荷路径在垂直于主表面的横截面中设置在凹陷部分之间。 第二和第三半导体区域中的至少一个位于至少两个信号电荷路径的方向上。