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    • 2. 发明公开
    • SOLID-STATE IMAGE SENSOR AND CAMERA
    • 堪萨斯州的FESTKÖRPERBILDSENSOR
    • EP3048645A1
    • 2016-07-27
    • EP16150024.4
    • 2016-01-04
    • Canon Kabushiki Kaisha
    • KATO, TaroIBA, JunIWATA, KoichiroAKABORI, HirooSHIGEMORI, ShotaHASHIMOTO, Kouhei
    • H01L27/146
    • H01L27/14609H01L27/14603H01L27/14621H01L27/14623H01L27/14627H01L27/14643H04N5/378
    • A solid-state image sensor (10) includes a plurality of pixels (100) for focus detection, each of the pixels including a photoelectric converter (102) arranged in a semiconductor substrate (103), a microlens (108), and a light blocking portion (109) arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter. A face in the pixel, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening (112) and a second opening (111) in addition to the light blocking portion. The light blocking portion includes a separator (SP) that has a light blocking property and is arranged between the first opening and the second opening. The second opening is larger in area than the first opening, and the light blocking portion is larger in area than the first opening.
    • 固态图像传感器(10)包括用于焦点检测的多个像素(100),每个像素包括布置在半导体衬底(103)中的光电转换器(102),微透镜(108)和光 阻挡部分(109)布置在半导体衬底和微透镜之间以覆盖光电转换器的一部分。 像素中的平行于半导体衬底的表面并且遮光部分布置的像素除了遮光部分之外还包括第一开口(112)和第二开口(111)。 遮光部分包括具有阻光性的隔膜(SP),并且布置在第一开口和第二开口之间。 第二开口的面积比第一开口大,遮光部的面积比第一开口的面积大。
    • 4. 发明公开
    • PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE READING APPARATUS
    • 光电转换装置和图像读取装置
    • EP3249690A3
    • 2018-03-07
    • EP17172711.8
    • 2017-05-24
    • CANON KABUSHIKI KAISHA
    • SUZUKI, TatsuyaKOIZUMI, ToruOGURA, MasanoriSUZUKI, TakanoriIBA, Jun
    • H01L27/146
    • H01L27/14605H01L27/1463H01L27/14643H04N1/02805
    • A photoelectric conversion apparatus includes a semiconductor substrate (400) having one principle surface including recessed portions (106), and insulation bodies (201) in the recessed portions. The semiconductor substrate includes photoelectric conversion elements (110) each of which includes a first semiconductor region (101) of a first conductivity type, a second semiconductor region (102) of a second conductivity type, and a third semiconductor region (103) of the second conductivity type which has at least a portion nearer to the principle surface relative to the second semiconductor region. The second semiconductor region has a polarity of signal charge. The second semiconductor region is in contact with the first and third semiconductor regions. Signal charge paths are disposed between the recessed portions in a cross section perpendicular to the principle surface. At least one of the second and third semiconductor regions is positioned in directions of at least two of the signal charge paths.
    • 一种光电转换设备包括:半导体衬底(400),其具有包括凹陷部分(106)的一个主表面以及凹陷部分中的绝缘体(201)。 半导体衬底包括光电转换元件(110),每个光电转换元件包括第一导电类型的第一半导体区域(101),第二导电类型的第二半导体区域(102)和第三导电类型的第三半导体区域(103) 第二导电类型,其具有相对于第二半导体区域更靠近主表面的至少一部分。 第二半导体区域具有信号电荷的极性。 第二半导体区域与第一和第三半导体区域接触。 信号电荷路径在垂直于主表面的横截面中设置在凹陷部分之间。 第二和第三半导体区域中的至少一个位于至少两个信号电荷路径的方向上。