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1. 发明公开

EP1229574A3 Silicon-based film, formation method therefor and photovoltaic element 审中-公开
标题翻译：基于硅的层，制造方法，和光生伏打元件
公开(公告)号：EP1229574A3
公开(公告)日：2009-03-11
申请号：EP02002368.5
申请日：2002-01-31
申请人： CANON KABUSHIKI KAISHA
发明人： Kondo, Takaharu , Sano, Masafumi , Matsuda, Koichi , Higashikawa, Makoto
IPC分类号： H01L21/205 , H01L31/18 , H01L31/20 , H01L31/02 , C23C16/24 , C23C16/44
CPC分类号： H01J37/32467 , C23C16/24 , C23C16/4404 , H01L21/02422 , H01L21/02425 , H01L21/02491 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/022466 , H01L31/022475 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.

2. 发明公开

EP0890995A2 Textured zinc oxide thin film, process for producing the same and photoelectric conversion element using said film 失效
标题翻译：，其制备方法以及光电转换器中使用的相同的纹理的氧化锌薄膜工艺
公开(公告)号：EP0890995A2
公开(公告)日：1999-01-13
申请号：EP98112664.2
申请日：1998-07-08
申请人： CANON KABUSHIKI KAISHA
发明人： Kondo, Takaharu
IPC分类号： H01L31/0224 , H01L31/0236 , C01G9/02
CPC分类号： H01L31/0236 , H01L31/022483 , Y02E10/50 , Y10T428/24 , Y10T428/24926
摘要： Provided are a zinc oxide thin film having an X-ray diffraction peak of the plane of zinc oxide crystal, a photoelectric conversion element having the zinc oxide thin film, and production processes thereof. By these, the texture level of the zinc oxide thin film is increased and the photoelectric conversion element is provided with excellent short circuit current density (Jsc).
摘要翻译：提供了具有以氧化锌晶体中，具有氧化锌薄膜的光电转换元件，以及它们的生产过程的平面的X射线衍射峰的氧化锌薄膜。由本文中，氧化锌薄膜的纹理水平增加，并且在光电转换元件上设置有优异的短路电流密度（Jsc）。

3. 发明授权

EP0794270B1 Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film 失效
标题翻译：一种制备Dünnzinkoxidfilm和制造半导体器件和工艺的基板使用该膜制造的光电转换装置的方法的过程
公开(公告)号：EP0794270B1
公开(公告)日：2000-06-14
申请号：EP97301408.7
申请日：1997-03-04
申请人： CANON KABUSHIKI KAISHA
发明人： Arao, Kozo , Nakagawa, Katsumi , Kondo, Takaharu , Iwasaki, Yukiko
IPC分类号： C25D9/08 , H01L31/18 , H01L31/20 , H01L31/0224 , H01L31/0236
CPC分类号： H01L31/076 , C25D5/10 , C25D9/08 , H01L31/056 , H01L31/075 , H01L31/1828 , H01L31/1884 , Y02E10/52 , Y02E10/543 , Y02E10/548 , Y02P70/521

4. 发明公开

EP0890995A3 Textured zinc oxide thin film, process for producing the same and photoelectric conversion element using said film 失效
标题翻译：，其制备方法以及光电转换器中使用的相同的纹理的氧化锌薄膜工艺
公开(公告)号：EP0890995A3
公开(公告)日：1999-06-23
申请号：EP98112664.2
申请日：1998-07-08
申请人： CANON KABUSHIKI KAISHA
发明人： Kondo, Takaharu
IPC分类号： H01L31/0224 , H01L31/0236 , C01G9/02
CPC分类号： H01L31/0236 , H01L31/022483 , Y02E10/50 , Y10T428/24 , Y10T428/24926
摘要： Provided are a zinc oxide thin film having an X-ray diffraction peak of the plane of zinc oxide crystal, a photoelectric conversion element having the zinc oxide thin film, and production processes thereof. By these, the texture level of the zinc oxide thin film is increased and the photoelectric conversion element is provided with excellent short circuit current density (Jsc).

5. 发明公开

EP2487715A2 Solid-state image pickup device and method for manufacturing solid-state image pickup device 有权
标题翻译： Festkörperbildaufnahmevorrichtungund Verfahren zur Herstellung derFestkörperbildaufnahmevorrichtung
公开(公告)号：EP2487715A2
公开(公告)日：2012-08-15
申请号：EP12151095.2
申请日：2012-01-13
申请人： Canon Kabushiki Kaisha
发明人： Sawayama, Tadashi , Ikakura, Hiroshi , Kondo, Takaharu , Eto, Toru
IPC分类号： H01L27/146
CPC分类号： H01L27/14629 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14685
摘要： A method for manufacturing a solid-state image pickup device that includes a substrate (301) including a photoelectric conversion unit (202) and a waveguide arranged on the substrate, the waveguide corresponding to the photoelectric conversion unit and including a core and a cladding (3191), includes a first step and a second step, in which in the first step and the second step, a member (324a) to be formed into the core is formed in an opening in the cladding by high-density plasma-enhanced chemical vapor deposition, and in which after the first step, in the second step, the member to be formed into the core is formed by the high-density plasma-enhanced chemical vapor deposition under conditions in which the ratio of a radio-frequency power on the back face side of the substrate to a radio-frequency power on the front face side of the substrate is higher than that in the first step.
摘要翻译：一种固体摄像装置的制造方法，其特征在于，包括：基板（301），具备配置在所述基板上的光电转换部（202）和波导管，所述波导对应于所述光电转换部并具有芯和包层（ 3191）包括第一步骤和第二步骤，其中在第一步骤和第二步骤中，待形成芯体的构件（324a）通过高密度等离子体增强化学品形成在包层的开口中并且其中在第一步骤之后，在第二步骤中，通过高密度等离子体增强化学气相沉积在其中将射频功率的比率基板的背面侧与基板的正面侧的高频电力比第一工序的高。

6. 发明公开

EP1241711A3 Semiconductor element, and method of forming silicon-based film 审中-公开
标题翻译：半导体器件及其制造方法的含硅膜
公开(公告)号：EP1241711A3
公开(公告)日：2007-07-04
申请号：EP02005536.4
申请日：2002-03-11
申请人： CANON KABUSHIKI KAISHA
发明人： Kondo, Takaharu , Okabe, Shotaro , Sano, Masafumi , Sakai, Akira , Hayashi, Ryo. , Sugiyama, Suichiro
IPC分类号： H01L31/0368 , H01L31/075 , H01L31/18
CPC分类号： H01L29/66765 , H01L29/045 , H01L29/78618 , H01L29/78678 , H01L29/78696 , H01L31/03685 , H01L31/075 , H01L31/182 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10T428/261
摘要： The present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, the element being characterized in that at least one of the silicon-based films contains a microcrystal, and microcrystal located in at least one interface region of the silicon-based films containing the microcrystal has no orientation property. Further, the present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, wherein at least one of the silicon-based films contains a microcrystal, and the orientation property of the microcrystal in the silicon-based film containing the microcrystal changes in a film thickness direction of the silicon-based film containing the microcrystal. In order to provide an inexpensive silicon-based film showing excellent performance, the present invention provides a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film, and a semiconductor element using this silicon-based film and having excellent adhesion and environmental resistance.

7. 发明公开

EP1420085A2 Zinc oxide film, photovoltaic device, and zinc oxide film formation process 审中-公开
标题翻译： Zinkoxidschicht，photovoltaische Vorrichtung und Verfahren zur Herstellung einer Zinkoxidschicht
公开(公告)号：EP1420085A2
公开(公告)日：2004-05-19
申请号：EP03024768.8
申请日：2003-10-29
申请人： CANON KABUSHIKI KAISHA
发明人： Kondo, Takaharu , Toyama, Noboru , Hayashi, Ryo , Sonoda, Yuichi , Nishimoto, Tomonori , Yamada, Satoru , Higashikawa, Makoto , Iwata, Masumitsu , Miyamoto, Yusuke
IPC分类号： C25D9/04 , C23C28/00 , H01L31/18
CPC分类号： H01L31/0392 , C23C14/086 , C23C28/044 , C23C28/30 , C23C28/323 , C23C28/324 , C23C28/345 , C25D9/04 , H01L31/022425 , H01L31/03529 , H01L31/03921 , H01L31/18 , Y02E10/50
摘要： In a zinc oxide film having a plurality of texture constituents comprised of hills each having structure wherein a first surface borders on a second surface along one curved line, texture constituents in which first surfaces the hills of the texture constituents have an average angle of inclination in a size within the range of from 30 degrees or more to 60 degrees or less and second surfaces have an average angle of inclination in a size within the range of from 10 degrees or more to 35 degrees or less account for at least a half of the plurality of texture constituents. This enables improvement in characteristics and durability of zinc oxide films used as optical confinement layers in photovoltaic devices, and also enables formation thereof at a low cost.
摘要翻译：在具有多个纹理构成的氧化锌膜中，每个纹路具有各自具有结构的山丘，其中第一表面沿着一条曲线在第二表面上接合，其中纹理成分的第一表面是纹理成分的山丘具有平均倾斜角尺寸在30度以上至60度以下的范围内，第二表面具有在10度以上至35度以下的尺寸的平均倾斜角度，其中至少一半为多种纹理成分。这使得能够改善在光电器件中用作光限制层的氧化锌膜的特性和耐久性，并且还能够以低成本形成。

8. 发明公开

EP1160879A2 Method of forming silicon-based thin film, silicon-based thin film and photovoltaic element 审中-公开
标题翻译：基于硅的薄膜的制造方法中，所述基于硅的光伏器件上的薄膜和
公开(公告)号：EP1160879A2
公开(公告)日：2001-12-05
申请号：EP01113168.7
申请日：2001-05-30
申请人： CANON KABUSHIKI KAISHA
发明人： Kondo, Takaharu , Matsuda, Koichi , Higashikawa, Makoto
IPC分类号： H01L31/18 , H01L31/075 , H01L31/0392 , H01L31/20 , H01L21/205
CPC分类号： H01L31/202 , C23C16/24 , C23C16/509 , C30B25/105 , C30B29/06 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/03767 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q = P o ×P R /S/d is controlled so as to be 50 or more, wherein P o (W) is a supplied power, S (cm 2 ) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and P R (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.
摘要翻译：在使用源气体包括硅卤化物和氢气，由Q = P○×PR / S / D中定义的Q的值的高频等离子CVD被控制以便为50或更大，worin P 2 O（W）是一个提供功率，S（cm 2）的是一个高频引入电极的面积，D（cm）为高频引入电极和基板之间的距离，并且PR（乇）的压力。从而，提供了一种形成硅薄膜，硅薄膜并且具有优异的光电特性的光电元件的方法，其达到工业上实用的水平的成膜速率。

9. 发明公开

EP1069625A2 Microcrystalline series photovoltaic element, process for the production of said photovoltaic element, building material and power generation apparatus in which said photovoltaic element is used 审中-公开
标题翻译：使用该组件微晶光电器件串联，它的生产过程中，建筑材料和发电装置
公开(公告)号：EP1069625A2
公开(公告)日：2001-01-17
申请号：EP00115235.4
申请日：2000-07-13
申请人： CANON KABUSHIKI KAISHA
发明人： Shiozaki, Atushi , Sano, Masafumi , Kariya, Toshimitsu , Kondo, Takaharu , Higashikawa, Makoto
IPC分类号： H01L31/075 , H01L31/18 , H01L31/20 , H01L31/0368 , H01L31/048
CPC分类号： H01L31/03685 , H01L31/1824 , Y02B10/12 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.
摘要翻译：具有堆叠结构，其包括不含结晶相的第一半导体层的光电元件，第二半导体层含近球形微晶相，和含有在以此顺序堆叠柱形微晶相的第三半导体层，worin所述的球形微晶相上的所述第三半导体层具有平均sizewhich侧第二半导体层比在所述第一半导体层的侧面，所述第二半导体层的所述球形微晶相的更大。

10. 发明公开

EP1420085A3 Zinc oxide film, photovoltaic device, and zinc oxide film formation process 审中-公开
标题翻译：氧化锌层，光伏装置和方法，用于制造氧化锌
公开(公告)号：EP1420085A3
公开(公告)日：2007-04-11
申请号：EP03024768.8
申请日：2003-10-29
申请人： CANON KABUSHIKI KAISHA
发明人： Kondo, Takaharu , Toyama, Noboru , Hayashi, Ryo , Sonoda, Yuichi , Nishimoto, Tomonori , Yamada, Satoru , Higashikawa, Makoto , Iwata, Masumitsu , Miyamoto, Yusuke
IPC分类号： C25D9/04 , C23C28/00 , H01L31/18
CPC分类号： H01L31/0392 , C23C14/086 , C23C28/044 , C23C28/30 , C23C28/323 , C23C28/324 , C23C28/345 , C25D9/04 , H01L31/022425 , H01L31/03529 , H01L31/03921 , H01L31/18 , Y02E10/50
摘要： In a zinc oxide film having a plurality of texture constituents comprised of hills each having structure wherein a first surface borders on a second surface along one curved line, texture constituents in which first surfaces the hills of the texture constituents have an average angle of inclination in a size within the range of from 30 degrees or more to 60 degrees or less and second surfaces have an average angle of inclination in a size within the range of from 10 degrees or more to 35 degrees or less account for at least a half of the plurality of texture constituents. This enables improvement in characteristics and durability of zinc oxide films used as optical confinement layers in photovoltaic devices, and also enables formation thereof at a low cost.

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