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    • 5. 发明公开
    • Exposure method
    • 曝光方法
    • EP0361934A2
    • 1990-04-04
    • EP89309915.0
    • 1989-09-28
    • CANON KABUSHIKI KAISHA
    • Ohta, HirohisaOzawa, KunitakaKawakami, EigoUzawa, Shunichi
    • G03F7/20
    • G03F9/7023G03F7/201
    • An exposure method wherein a mask (8) and a semiconductor wafer (1) are disposed opposed to each other in a close proximity relation in respect to Z-axis direction and wherein a pattern of the mask is printed on each of different shot areas of the semiconductor wafer in a step-and-repeat manner, with a predetermined exposure energy, is disclosed. In this method, the spacing between the mask and the wafer for the paralleling of them is made larger than the spacing therebetween as assumed at the time of mask-to-wafer alignment in respect to X-Y plane or the spacing between the mask and the wafer as assumed at the time of exposure of the wafer to the mask. After the paralleling of the mask and the wafer, the mask and the wafer are relatively moved closer to each other in the Z-axis direction and the alignment and exposure is performed. This ensures that the alignment and exposure is effected at an optimum spacing while, on the other hand, contact of the mask and the wafer at the time of paralleling is precluded.
    • 一种曝光方法,其中掩模(8)和半导体晶片(1)相对于Z轴方向以彼此靠得很近的关系设置,并且其中掩模的图案被印刷在每个不同的拍摄区域上 公开了具有预定曝光能量的分步重复方式的半导体晶片。 在该方法中,掩模和晶片之间的并联间距大于它们之间的间隔,如假设在掩模与晶片对准时相对于XY平面或掩模与晶片之间的间隔 如在将晶片暴露于掩模时所假定的那样。 在掩模和晶片平行之后,掩模和晶片在Z轴方向上相对地移动得更接近并且执行对准和曝光。 这确保了对准和曝光以最佳的间隔进行,而另一方面避免了并联时掩模和晶片的接触。