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    • 1. 发明公开
    • Quartz insulator for ion implanter beamline components
    • QuartzisolatorfürTeilchen in derStrahlführungslinievonIonenimplantierungsgeräten
    • EP1111652A1
    • 2001-06-27
    • EP00311392.5
    • 2000-12-19
    • Axcelis Technologies, Inc.
    • Saadatmand, KouroshSwenson, David RichardDivergilio, William FrankQuinn,Stephen MichaelWan, ZhiminBenveniste, Victor Maurice
    • H01J37/317H01J37/12
    • H01J37/3171H01J37/12H01J2237/038H01J2237/04737H01J2237/04924
    • An electrostatic quadrupole lens assembly (60) is provided for an ion implanter (10) having an axis (86) along which an ion beam passes, comprising: (i) four electrodes (84a-84d) oriented radially outward from the axis (86), approximately 90° apart from each other, such that a first pair of electrodes (84a and 84c) oppose each other approximately 180° apart, and a second pair of electrodes (84b and 84d) also oppose each other approximately 180° apart; (ii) a housing (62) having a mounting surface (64) for mounting the assembly (60) to the implanter, the housing at least partially enclosing the four electrodes (84a-84d); (iii) a first electrical lead (104) for providing electrical power to the first pair of electrodes (84a and 84c); (iv) a second electrical lead (108) for providing electrical power to the second pair of electrodes (84b and 84d); and (v) a plurality of electrically insulating members (92) formed of a glass-like material, comprising at least a first electrically insulating member for attaching the first pair of electrodes (84a and 84c) to the housing, and at least a second electrically insulating member for attaching the second pair of electrodes (84b and 84d) to the housing. The plurality of electrically insulating members (92) are preferably comprised of quartz (SiO 2 ), or a heat resistant and chemical resistant glass material such as Pyrex®. The members (92) resist accumulation of material such as graphite sputtered off of the electrodes (84a-84d) by the ion beam, thus reducing the occurrence of high voltage breakdown and electrical current breakdown.
    • 为具有离子束通过的轴线(86)的离子注入机(10)提供静电四极透镜组件(60),包括:(i)从轴线(86)径向向外取向的四个电极(84a-84d) )彼此大约90°,使得第一对电极(84a和84c)彼此相对大约180°,并且第二对电极(84b和84d)也彼此大约相隔180°; (ii)具有用于将所述组件(60)安装到所述注入机的安装表面(64)的壳体(62),所述壳体至少部分地包围所述四个电极(84a-84d); (iii)用于向所述第一对电极(84a和84c)提供电力的第一电引线(104); (iv)用于向所述第二对电极(84b和84d)提供电力的第二电引线(108); 和(v)由玻璃状材料形成的多个电绝缘构件(92),至少包括用于将第一对电极(84a和84c)附接到壳体的第一电绝缘构件,以及至少第二电极 用于将第二对电极(84b和84d)附接到壳体的电绝缘构件。 多个电绝缘构件(92)优选地由石英(SiO 2)或耐热和耐化学腐蚀的玻璃材料如Pyrex TM组成。 构件(92)通过离子束阻止溅射在电极(84a-84d)之外的诸如石墨的材料的积聚,从而减少高压击穿和电流击穿的发生。
    • 4. 发明公开
    • System and method for in-process cleaning of an ion source
    • 设备和方法,用于在工艺过程中的清洁的离子源
    • EP0945892A3
    • 2001-10-10
    • EP99302176.5
    • 1999-03-22
    • Axcelis Technologies, Inc.
    • Graf, Michael AnthonyBenveniste, Victor Maurice
    • H01J27/04H01J27/02H01J37/08
    • H01J37/3171H01J27/04H01J37/08H01J2237/022H01J2237/061
    • A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas. The disassociated and ionized constituents of said cleaning gas react with said disassociated and ionized constituents of said dopant gas to prevent formation of deposits of elements contained within said ionizable dopant gas on surfaces of said chamber walls. The cleaning gas may be, for example, nitrogen trifluoride (NF 3 ), and the ionizable dopant gas may be, for example, either phosphine (PH 3 ) or arsine (AsH 3 ). Mass flow controllers control the ratio of cleaning gas to ionizable dopant gas introduced into said plasma chamber, which is greater than 0:1 and preferably at least 3:1.
    • 6. 发明公开
    • Waveguide for microwave excitation of plasma in an ion beam guide
    • 波导用于在离子束引导装置的等离子体的微波激发
    • EP1176623A3
    • 2005-06-15
    • EP01306054.6
    • 2001-07-13
    • Axcelis Technologies, Inc.
    • Benveniste, Victor MauriceYe, JohnDivergilio, William Frank
    • H01J37/317H01J37/05H01J37/32H01J37/02H01P3/16
    • H01J37/32678H01J37/05H01J37/3171
    • An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet (114) mounted in a passageway (139, 202) along the path (129) of an ion beam, a power source (174) adapted to provide an electric field in the passageway (139, 202), and a magnetic device (170) adapted to provide a multi-cusped magnetic field in the passageway (139, 202), which may include a plurality of magnets (220) mounted along at least a portion of the passageway (139, 202). The power source (174) and the magnets (220) may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway (139, 202). The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide (250) adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway (202) to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method (300) of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
    • 7. 发明公开
    • Waveguide for microwave excitation of plasma in an ion beam guide
    • Wellenleiter zur Mikrowellenanregung eines等离子体在einerIonenstrahlführungsvorrichtung
    • EP1176623A2
    • 2002-01-30
    • EP01306054.6
    • 2001-07-13
    • Axcelis Technologies, Inc.
    • Benveniste, Victor MauriceYe, JohnDivergilio, William Frank
    • H01J37/317H01J37/05H01J37/32
    • H01J37/32678H01J37/05H01J37/3171
    • An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet (114) mounted in a passageway (139, 202) along the path (129) of an ion beam, a power source (174) adapted to provide an electric field in the passageway (139, 202), and a magnetic device (170) adapted to provide a multi-cusped magnetic field in the passageway (139, 202), which may include a plurality of magnets (220) mounted along at least a portion of the passageway (139, 202). The power source (174) and the magnets (220) may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway (139, 202). The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide (250) adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway (202) to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method (300) of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
    • 公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。 该设备包括安装在沿着离子束的路径(129)的通道(139,202)中的质量分析磁体(114),适于在通道(139,202)中提供电场的电源(174) 以及适于在所述通道(139,202)中提供多通道磁场的磁性装置(170),所述磁性装置可以包括沿着所述通道(139,202)的至少一部分安装的多个磁体(220) 。 电源(174)和磁体(220)可以协作地相互作用以沿着通道(139,202)的至少一部分提供电子回旋共振(ECR)状态。 多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极场上,以与给定的低能量离子束的已知RF或微波频率的电场相互作用。 本发明还包括质量分析器波导(250),其适于沿着质量分析器通道(202)的长度一致地将电场耦合到束等离子体,从而改善ECR条件的产生。 因此,本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强,而不引入外部产生的等离子体。 本发明还包括在低能离子注入系统中提供离子束容纳的方法(300)以及离子注入系统。