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1. 发明公开

EP2575220A2 Tunable laser with integrated wavelength reference 有权转让
标题翻译：激光打标机激光打标机Wellenlängenreferenz
公开(公告)号：EP2575220A2
公开(公告)日：2013-04-03
申请号：EP12006832.5
申请日：2012-10-01
申请人： Aurrion, Inc.
发明人： Fang, Alexander W. , Fish, Gregory A. , Hutchinson, John
IPC分类号： H01S5/06 , H01S5/026
CPC分类号： H01S5/068 , H01S3/0014 , H01S3/0637 , H01S3/0675 , H01S3/10015 , H01S3/10023 , H01S3/1003 , H01S3/1055 , H01S3/1305 , H01S5/021 , H01S5/02453 , H01S5/026 , H01S5/0265 , H01S5/0612 , H01S5/1028 , H01S5/1209 , H01S5/142
摘要： In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters (515) and silicon wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices (501). For example, embodiments of the invention may utilize hybridized III-V/silicon gain regions with ring filters (515) on silicon form a tunable laser (501) with efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the nature of the silicon rings.
摘要翻译：在现有技术中，利用硅基可调谐环形滤波器和基于III-V半导体的增益区域的可调谐激光器需要独立形成的基于硅和III-V半导体的光学元件的异质集成，导致需要复杂制造工艺的大型光学器件（例如，密封包装以联接形成在不同基底上的装置，元件的精确对准等）。本发明的实施例通过使用杂化的III-V /硅增益区域和诸如硅波长滤波器（515）和硅波长参考的硅光学部件来消除对体光学元件和气密封装的需要，由此减小尺寸和可调谐激光器件的制造复杂度（501）。例如，本发明的实施例可以利用具有硅上的环形滤波器（515）的混合III-V /硅增益区域形成具有来自III-V区域的有效增益的可调谐激光器（501），同时提供广泛的可调谐性，有效的可调谐性，并且由于硅环的性质而导致窄线宽度。

2. 发明授权

EP2575220B1 Tunable laser with integrated wavelength reference 有权转让
标题翻译：集成波长参考的可调谐激光器
公开(公告)号：EP2575220B1
公开(公告)日：2017-08-16
申请号：EP12006832.5
申请日：2012-10-01
申请人： Aurrion, Inc.
发明人： Fang, Alexander W. , Fish, Gregory A. , Hutchinson, John
IPC分类号： H01S5/06 , H01S5/026
CPC分类号： H01S5/068 , H01S3/0014 , H01S3/0637 , H01S3/0675 , H01S3/10015 , H01S3/10023 , H01S3/1003 , H01S3/1055 , H01S3/1305 , H01S5/021 , H01S5/02453 , H01S5/026 , H01S5/0265 , H01S5/0612 , H01S5/1028 , H01S5/1209 , H01S5/142

3. 发明公开

EP2575220A3 Tunable laser with integrated wavelength reference 有权转让
公开(公告)号：EP2575220A3
公开(公告)日：2013-09-18
申请号：EP12006832.5
申请日：2012-10-01
申请人： Aurrion, Inc.
发明人： Fang, Alexander W. , Fish, Gregory A. , Hutchinson, John
IPC分类号： H01S5/06 , H01S5/026
CPC分类号： H01S5/068 , H01S3/0014 , H01S3/0637 , H01S3/0675 , H01S3/10015 , H01S3/10023 , H01S3/1003 , H01S3/1055 , H01S3/1305 , H01S5/021 , H01S5/02453 , H01S5/026 , H01S5/0265 , H01S5/0612 , H01S5/1028 , H01S5/1209 , H01S5/142
摘要： In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters (515) and silicon wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices (501). For example, embodiments of the invention may utilize hybridized III-V/silicon gain regions with ring filters (515) on silicon form a tunable laser (501) with efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the nature of the silicon rings.

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