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1. 发明公开

EP1330681A1 SYSTEM AND METHOD FOR FACILITATING WAFER ALIGNMENT BY MITIGATING EFFECTS OF RETICLE ROTATION ON OVERLAY 有权
标题翻译：系统和方法便于片对齐，为削减BAR板的IN叠加层的旋转效应
公开(公告)号：EP1330681A1
公开(公告)日：2003-07-30
申请号：EP01977412.4
申请日：2001-10-02
申请人： ADVANCED MICRO DEVICES INC.
发明人： TEMPLETON, Michael, K. , RANGARAJAN, Bharath
IPC分类号： G03F9/00
CPC分类号： G03F7/70633 , G03F9/7003 , G03F9/7076 , G03F9/7084
摘要： The present invention relates to wafer alignment. A reticle (50) is employed which includes, a design (54), and a first and second set of scribe marks (60, 62, 64, 66). The first and second sets of scribe marks (60, 62, 64, 66) have an associated symmetry relative to the reticle design (54). The design and scribe marks are printed at selected field locations on a surface layer of the wafer (96). The first and second sets of scribe marks as printed (102, 110, 130, 140) at adjacent fields on the surface layer of wafer (96) form a composite set of scribe marks (98a, 98b). The symmetric relationship between the first and second sets of scribe marks results in the composite set of scribe marks substantially negating print errors of the marks due to reticle rotation and/or lens magnification with respect to a geometric reference point of the composite set of scribe marks (98a, 98b). The employment of the composite set of scribe marks, such as to locate a corresponding virtual alignment mark (162, substantially facilitates mitigation of overlay error in wafer alignment.

2. 发明公开

EP1295311A1 SYSTEM FOR UNIFORMLY HEATING PHOTORESIST 审中-公开
标题翻译： SYSTEM FOR均匀加热光致抗蚀剂层
公开(公告)号：EP1295311A1
公开(公告)日：2003-03-26
申请号：EP01931007.7
申请日：2001-05-01
申请人： ADVANCED MICRO DEVICES INC.
发明人： SUBRAMANIAN, Ramkumar , TEMPLETON, Michael, K. , RANGARAJAN, Bharath
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A system, (20) for regulating heating temperature of a material is provided. The material may be a photoresist (22), a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material, for example. The system (20) includes a plurality of lamps (40) and optical fibers (44) directing radiation to and heating a respective portions of a bakeplate (30) on which the material is to be placed. In one embodiment, the temperature at various locations on the material placed on the bakeplate (30) is determined and the heating rates are controlled in response to those measurements. In another aspect of the invention, the temperature at various portions of the bakeplate (30) is determined and controlled. In this latter aspect, uniform heating of the material is a consequence of uniform bakeplate (30) temperature.

3. 发明公开

EP1269112A1 THICKNESS MEASUREMENT USING AFM FOR NEXT GENERATION LITHOGRAPHY 有权
标题翻译： WITH A原子力显微镜测量DICK
公开(公告)号：EP1269112A1
公开(公告)日：2003-01-02
申请号：EP01912979.0
申请日：2001-02-21
申请人： ADVANCED MICRO DEVICES INC.
发明人： PHAN, Khoi, A. , RANGARAJAN, Bharath , SINGH, Bhanwar
IPC分类号： G01B7/34 , G01B21/08 , H01L21/66 , C30B25/16 , G01B21/18 , G01N27/00 , G01N7/06
CPC分类号： G01B21/18 , G01B7/066 , G01B21/08 , G01Q30/04 , G01Q80/00 , H01L22/12 , Y10S977/852
摘要： The present invention relates to a method (100) of determining a film thickness and comprises identifying (114) a depth associated with a defect (106) in an underlying material (108) and forming (116) the film (130) over the underlying material (108). The method (100) further comprises identifying (118) a depth associated with the defect (106) in the film (108) and then using (124) the identified depths to determine the film thickness. The present invention also relates to a system (200) for determining a film thickness and comprises a defect inspection tool (204) operable to identify a location of one or more defects (106) in an underlying material (108) and a topology measurement tool (208) operable to measure a change in topology of a surface. The system (200) also comprises a controller (206) operably coupled to the defect inspection tool (204) and the topology measurement tool (208). The controller (206) is adapted to receive location information from the defect inspection tool (204) relating to the one or more defects (106) and use the location information to generate and transmit one or more control signals to the topology measurement tool (208) to evaluate a topology of an underlying material (108) and a film (130) at the location corresponding to the one or more defects (106) to thereby generate topology information. Lastly, the controller (206) is adapted to receive the topology information from the topology measurement tool (208) and determine a film thickness using the topology information.

4. 发明授权

EP1402242B1 USING SCATTEROMETRY TO DEVELOP REAL TIME ETCH IMAGE 有权
标题翻译： LENS测的使用图实时蚀刻
公开(公告)号：EP1402242B1
公开(公告)日：2009-06-03
申请号：EP02707668.6
申请日：2002-01-31
申请人： ADVANCED MICRO DEVICES, INC.
发明人： SUBRAMANIAN, Ramkumar , RANGARAJAN, Bharath , SINGH, Bhanwar , TEMPLETON, Michael, K. c/o IMT
IPC分类号： G01N21/47 , H01L21/66
CPC分类号： H01L21/7681 , G01N21/4738 , H01J37/32935 , H01L21/67069 , H01L21/67253 , H01L22/12
摘要： A system (1000) for characterizing an etch process, such as forming a dual damascene structure, via scatterometry based real time imaging is provided. The system (1000) includes one or more light sources (1020), each light source directing light to one or more features and/or gratings (1015) on a wafer (1010). Light reflected from the features and/or gratings (1015) is collected by a measuring system (1070), which processes the collected light. The collected light is indicative of the etch results achieved at respective portions of the wafer (1010). The measuring system (1070) provides etching related data to a processor (1040) that determines the desirability of the etching of the respective portions of the wafer (1010). The system (1000) also includes one or more etching devices (1030), each such device corresponding to a portion of the wafer (1010) and providing for the etching thereof. The processor (1040) produces a real time etch image to characterize the progress of the etching and, in one example, produces suggested adaptations to the etch process.

5. 发明公开

EP1660948A2 PATTERN RECOGNITION AND METROLOGY STRUCTURE FOR AN X-INITIATIVE LAYOUT DESIGN 审中-公开
标题翻译：模式识别与测量结构用于X倡议布局设计
公开(公告)号：EP1660948A2
公开(公告)日：2006-05-31
申请号：EP04782631.8
申请日：2004-08-30
申请人： ADVANCED MICRO DEVICES, INC.
发明人： PHAN, Khoi, A. , RANGARAJAN, Bharath , SINGH, Bhanwar
IPC分类号： G03F9/00
CPC分类号： G03F7/70625 , G03F7/70633 , G03F9/7076 , Y10S438/975
摘要： The present invention relates to inspection methods and systems utilized to provide a best means for inspection of a wafer (900, 1250). The methods and systems include wafer-to-reticle alignment, layer-to-layer alignment and wafer surface feature inspection. The wafer (900, 1250)-to-reticle (1226) alignment is improved by the addition of diagonal lines (112, 114) to existing alignment marks (102, 104, 210A, 210B, 210C, 210D) to decrease the intersection size and corresponding area that a desired point can reside. Layer-to-layer alignment is improved in a similar manner by the addition of oblique and/or non-linear line segments to existing overlay targets (330). Also, providing for wafer surface inspection in a multitude of desired diagonal axes allows for more accurate feature measurement.

6. 发明公开

EP1417540A2 CRITICAL DIMENSION MONITORING FROM LATENT IMAGE 审中-公开
标题翻译：递延IMAGE用于控制关键尺寸分析
公开(公告)号：EP1417540A2
公开(公告)日：2004-05-12
申请号：EP02704323.1
申请日：2002-01-31
申请人： ADVANCED MICRO DEVICES INC.
发明人： SINGH, Bhanwar , TEMPLETON, Michael, K.,c/o IMT , RANGARAJAN, Bharath , SUBRAMANIAN, Ramkumar
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/70675
摘要： A system for monitoring a latent image exposed in a photo resist (300, 310, 675, 790) during semiconductor manufacture is provided. The system includes one or more light sources (110, 635, 740), each light source (110, 635, 740) directing light (760, 1602, 1712, 1840, 1940, 2040) to the latent image and/or one or more gratings exposed on one or more portions of a wafer (160, 400, 540, 665, 910, 1204, 1820, 1920, 2020). Light reflected (770, 1604, 1714, 1842, 1942, 2042) from the latent image and/or the gratings is collected by a signature system (630, 720), which processes the collected light. Light passing through the latent image and/or gratings may similarly be collected by the signature system (630, 720), which processes the collected light. The collected light is analyzed and can be employed to generate feedback information to control the exposure. The collect light is further analyzed and can be employed to generate feed forward information that can be employed to control post exposure processes including development and baking processes.

7. 发明授权

EP1290496B1 MODIFICATION OF MASK LAYOUT DATA TO IMPROVE MASK FIDELITY 有权
标题翻译：修改掩膜布局数据以提高掩膜保真度
公开(公告)号：EP1290496B1
公开(公告)日：2003-12-10
申请号：EP01930611.7
申请日：2001-04-19
申请人： ADVANCED MICRO DEVICES INC.
发明人： SUBRAMANIAN, Ramkumar , PHAN, Khoi, A. , SINGH, Bhanwar , RANGARAJAN, Bharath
IPC分类号： G03F1/14
CPC分类号： G03F1/70 , G03F7/70433 , G03F7/70441

8. 发明公开

EP1290496A2 MODIFICATION OF MASK LAYOUT DATA TO IMPROVE MASK FIDELITY 有权
标题翻译：的布局数据的掩模改善所产生的格局变化
公开(公告)号：EP1290496A2
公开(公告)日：2003-03-12
申请号：EP01930611.7
申请日：2001-04-19
申请人： ADVANCED MICRO DEVICES INC.
发明人： SUBRAMANIAN, Ramkumar , PHAN, Khoi, A. , SINGH, Bhanwar , RANGARAJAN, Bharath
IPC分类号： G03F1/14
CPC分类号： G03F1/70 , G03F7/70433 , G03F7/70441
摘要： The present invention relates to a system and method of modifying (660) mask layout data (100) to improve the fidelity of mask manufacture. The system and method include determining (645, 650, 655) the difference between the mask layout design (100) and the mask features (20) as written, and generating sizing corrections (160). The sizing corrections (160) can be used to modify (660) the mask layout data (100), and/or stored in a database (170).

9. 发明授权

EP1269112B1 THICKNESS MEASUREMENT USING AN ATOMIC FORCE MICROSCOPE 有权
标题翻译： WITH A原子力显微镜测量DICK
公开(公告)号：EP1269112B1
公开(公告)日：2004-06-09
申请号：EP01912979.0
申请日：2001-02-21
申请人： ADVANCED MICRO DEVICES INC.
发明人： PHAN, Khoi, A. , RANGARAJAN, Bharath , SINGH, Bhanwar
IPC分类号： G01B7/34 , G01B21/08 , H01L21/66 , G01B21/18 , G01N27/00
CPC分类号： G01B21/18 , G01B7/066 , G01B21/08 , G01Q30/04 , G01Q80/00 , H01L22/12 , Y10S977/852
摘要： The present invention relates to a method (100) of determining a film thickness and comprises identifying (114) a depth associated with a defect (106) in an underlying material (108) and forming (116) the film (130) over the underlying material (108). The method (100) further comprises identifying (118) a depth associated with the defect (106) in the film (108) and then using (124) the identified depths to determine the film thickness. The present invention also relates to a system (200) for determining a film thickness and comprises a defect inspection tool (204) operable to identify a location of one or more defects (106) in an underlying material (108) and a topology measurement tool (208) operable to measure a change in topology of a surface. The system (200) also comprises a controller (206) operably coupled to the defect inspection tool (204) and the topology measurement tool (208). The controller (206) is adapted to receive location information from the defect inspection tool (204) relating to the one or more defects (106) and use the location information to generate and transmit one or more control signals to the topology measurement tool (208) to evaluate a topology of an underlying material (108) and a film (130) at the location corresponding to the one or more defects (106) to thereby generate topology information. Lastly, the controller (206) is adapted to receive the topology information from the topology measurement tool (208) and determine a film thickness using the topology information.

10. 发明公开

EP1312109A1 SUPER CRITICAL DRYING OF LOW K MATERIALS 审中-公开
标题翻译：超临界干燥的低介电常数材料
公开(公告)号：EP1312109A1
公开(公告)日：2003-05-21
申请号：EP01941963.9
申请日：2001-06-04
申请人： ADVANCED MICRO DEVICES INC.
发明人： RANGARAJAN, Bharath , SUBRAMANIAN, Ramkumar , SINGH, Bhanwar
IPC分类号： H01L21/316 , H01L21/768
CPC分类号： H01L21/0212 , H01L21/02203 , H01L21/02282 , H01L21/02343 , H01L21/31695
摘要： One aspect of the present invention relates to a method of forming a low k material layer on a semiconductor substrate, involving the steps of depositing a mixture containing a low k material and a casting solvent on the semiconductor substrate; optionally contacting the mixture with a transition solvent whereby the casting solvent is removed from the mixture to form a second mixture containing the low k material and the transition solvent; contacting the second mixture with a supercritical fluid whereby the transition solvent is removed from the second mixture; and permitting the supercritical fluid to evaporate thereby forming the low k material layer.

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