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1. 发明授权

EP1971892B1 SIGNAL ISOLATOR LINEAR RECEIVER 有权
标题翻译：信号隔离，线性接收机
公开(公告)号：EP1971892B1
公开(公告)日：2016-11-30
申请号：EP06845643.3
申请日：2006-12-15
申请人： NVE Corporation
发明人： LANGE, Erik, H.
IPC分类号： G02B27/00 , G01R33/02 , H04L25/02 , H04L25/08 , H04L25/49 , G01R33/09
CPC分类号： G01R15/205 , B82Y25/00 , G01R33/09 , G01R33/093 , H04L25/0266 , H04L25/0272 , H04L25/49

2. 发明公开

EP2135254A1 STRESSED MAGNETORESISTIVE TAMPER DETECTION DEVICES 有权
标题翻译：回弹磁阻伪造检测装置
公开(公告)号：EP2135254A1
公开(公告)日：2009-12-23
申请号：EP08742038.6
申请日：2008-03-10
申请人： NVE Corporation
发明人： DEAK, James, G.
IPC分类号： G11C19/08
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675 , G11C11/1695
摘要： A tamper sensing system mounted with respect to a protected structure so as to have corresponding stress changes occur therein in response to selected kinds of tamperings with said protected structure comprising a first pair of stress affected magnetoresistive memory devices each capable of having a magnetic material layer therein established in a selected one of a pair of alternative magnetization states if in a first kind of stress condition and of being established in a single magnetization state if in an alternative second kind of stress condition, and the magnetic material layer in each having a magnetization in a first direction in one of the pair of alternative magnetization states and in a second direction in that remaining one of the pair of magnetization states. A first magnetizing electrical conductor extends adjacent to each of the first pair of stress affected magnetoresistive memory devices to establish said magnetic material layer in that one of said pair of alternative magnetization states thereof so as to have its said corresponding magnetization be oppositely directed with respect to said magnetization of that other. The first pair of stress affected magnetoresistive memory devices can each be provided by a spin dependent tunneling device having differing numbers of magnetization states available thereto depending on whether being in differing ones of alternative stress conditions.

3. 发明公开

EP1906194A2 Magnetic current sensor 失效
标题翻译：磁电流传感器
公开(公告)号：EP1906194A2
公开(公告)日：2008-04-02
申请号：EP07124177.2
申请日：1997-07-24
申请人： NVE Corporation
发明人： BLACK, William, C., Jr. , HERMANN, Theodore, M.
IPC分类号： G01R33/09
CPC分类号： G01R15/205 , G01R33/09
摘要： A current determiner having an output (60) at which representations of input currents are provided including an input conductor (25) for the input current and a current sensor (54) supported on a substrate (10) electrically isolated from one another but with the sensor (54) positioned in the magnetic fields arising about the input conductor (25) due to any input currents. The sensor (54) extends along the substrate (10) in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers (12, 13) separated by a non-magnetic conductive layer (14). The sensor (54) can be electrically connected to an electronic circuitry (26-27, 51-52, 58-60) formed in the substrate (10) including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor (54), and can include further current sensors (54, 55) in bridge circuits.
摘要翻译：具有输出（60）的电流确定器，在所述输出（60）处提供输入电流的表示，所述输入包括用于所述输入电流的输入导体（25）和支撑在基板（10）上的电流传感器（54），所述基板彼此电隔离，传感器（54）位于由于任何输入电流而在输入导体（25）周围产生的磁场中。传感器（54）在基本上垂直于输入导体的范围的方向上沿着衬底（10）延伸并且由至少一对由非磁性导电层（12,13）分隔的薄膜铁磁层层（14）。传感器（54）可以电连接到在衬底（10）中形成的包括非线性适应电路的电子电路（26-27,51-52,58-60），以提供精度提高的输入电流的表示，尽管非线性在电流传感器（54）中，并且可以在桥电路中包括另外的电流传感器（54,55）。

4. 发明公开

EP1639656A2 THERMALLY OPERATED SWITCH CONTROL MEMORY CELL 审中-公开
标题翻译：热控POWERED变存储器
公开(公告)号：EP1639656A2
公开(公告)日：2006-03-29
申请号：EP04777041.7
申请日：2004-06-23
申请人： NVE Corporation
发明人： DAUGHTON, James M. , POHM, Arthur V.
IPC分类号： H01L31/119
CPC分类号： H01L27/228 , G11C11/16 , H01L43/10
摘要： A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained separated by at least one layer of a nonmagnetic material with each bit structure having an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection structure provides electrical contact thereto. Sufficient electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.

5. 发明公开

EP1245029A1 SPIN DEPENDENT TUNNELING MEMORY 审中-公开
标题翻译：自旋相关的记忆隧道
公开(公告)号：EP1245029A1
公开(公告)日：2002-10-02
申请号：EP00978395.2
申请日：2000-11-06
申请人： NVE Corporation
发明人： POHM, Arthur, V.
IPC分类号： G11C7/00
CPC分类号： G11C14/0081 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3254 , H01L27/224 , H01L27/228
摘要： A digital data memory having a bit structure (17) in a memory cell based on a dielectric intermediate separating material (14) with two major surfaces having thereon an anisotropic ferromagnetic thin-film (12, 13; 12', 13') of differing thicknesses. These bit structures (17) are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series, parallel selectively connected members (11',17,20; 74,70,17,90,78; 103,104,17,100,102) of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

6. 发明授权

EP2717279B1 Magnetoresistive-based mixed anisotropy high field sensor 有权
标题翻译：霍赫费尔德传感器磁阻基础混合各向异性
公开(公告)号：EP2717279B1
公开(公告)日：2015-12-02
申请号：EP13187278.0
申请日：2013-10-03
申请人： NVE Corporation
发明人： Davies, Joseph, E.
IPC分类号： H01F10/32 , G01R33/09
CPC分类号： G01R33/093 , G01R33/098 , H01F10/3263 , H01F10/3286 , H01F10/3295

7. 发明授权

EP1196925B1 MAGNETIC MEMORY COINCIDENT THERMAL PULSE DATA STORAGE 有权
标题翻译： MAGNETISCHER SPEICHER MIT KOINZIDENTERWÄRMEPULSDATENSPEICHERUNG
公开(公告)号：EP1196925B1
公开(公告)日：2015-10-28
申请号：EP00947641.7
申请日：2000-06-16
申请人： NVE Corporation
发明人： DAUGHTON, James, M. , POHM, Arthur, V.
IPC分类号： G11C13/00 , G11C11/16
CPC分类号： G11C11/16 , B82Y25/00 , B82Y40/00 , G11C11/15 , G11C11/1675 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01F41/302 , H01L27/222

8. 发明公开

EP2717279A1 Magnetoresistive-based mixed anisotropy high field sensor 有权
标题翻译： Hochfeldsensor auf magnetoresistiver Basis mit gemischter Anisotropie
公开(公告)号：EP2717279A1
公开(公告)日：2014-04-09
申请号：EP13187278.0
申请日：2013-10-03
申请人： NVE Corporation
发明人： Davies, Joseph, E.
IPC分类号： H01F10/32 , G01R33/09
CPC分类号： G01R33/093 , G01R33/098 , H01F10/3263 , H01F10/3286 , H01F10/3295
摘要： A mixed anisotropy magnetic field sensor includes a first magnetic material film having in-plane anisotropy with a first magnetic easy axis that is in-plane, a second magnetic material film having out-of-plane anisotropy with a second magnetic easy axis that is perpendicular to the first magnetic easy axis of the first magnetic material film, and a nonmagnetic spacer between the first magnetic material film and the second magnetic material film. The first magnetic material film has a magnetization oriented in a first magnetization orientation parallel to the first magnetic easy axis in the presence of no applied magnetic field, and the second magnetic material film has a magnetization oriented in a second magnetization orientation parallel to the second magnetic easy axis in the presence of no applied magnetic field. The magnetization of the first magnetic material film rotates to align with the magnetization of the second magnetic material film in the second magnetization orientation in the presence of an applied out-of-plane magnetic field exceeding a threshold, and the magnetization of the second magnetic material film rotates to align with the magnetization of the first magnetic material film in the first magnetization orientation in the presence of an applied in-plane magnetic field exceeding a threshold.
摘要翻译：混合各向异性磁场传感器包括具有面内各向异性的第一磁性材料膜和位于平面内的第一磁性容易轴的第二磁性材料膜，具有垂直于第二磁性容易轴的具有面外各向异性的第二磁性材料膜到第一磁性材料膜的第一磁性容易轴，以及在第一磁性材料膜和第二磁性材料膜之间的非磁性间隔物。第一磁性材料膜在没有施加的磁场的情况下具有与第一磁性容易轴平行的第一磁化取向的磁化，并且第二磁性材料膜具有以与第二磁性方向平行的第二磁化取向的磁化在没有施加磁场的情况下容易轴。在施加的超出阈值的平面外磁场的存在下，第一磁性材料膜的磁化在第二磁化取向中旋转以与第二磁性材料膜的磁化对准，并且第二磁性材料的磁化在施加的面内磁场超过阈值的情况下，膜以第一磁化取向的第一磁性材料膜的磁化方向旋转。

9. 发明公开

EP2610630A2 Low hysteresis high sensitivity magnetic field sensor 有权
标题翻译： Magnetfeldsensor mit geringer Hysterese und hoher Empfindlichkeit
公开(公告)号：EP2610630A2
公开(公告)日：2013-07-03
申请号：EP12198640.0
申请日：2012-12-20
申请人： NVE Corporation
发明人： Nordman, Catherine Ann , Eames, Peter , Beech, Russ , Brownell, David J
IPC分类号： G01R33/09
摘要： An MTJ sensor having low hysteresis and high sensitivity is disclosed. The MTJ sensor includes, in one embodiment, a bridge with first and second active MTJ elements and first and second passive MTJ elements connected in a Wheatstone bridge configuration. First and second magnetic shield elements are located over the first and second passive MTJ elements and form a gap therebetween that concentrates magnetic flux toward the first and second active MTJ elements. A three-dimensional coil is wound around the first and second magnetic shield elements with over-windings located over the first and second magnetic shield elements and under-windings located under the first and second magnetic shield elements, connected together by a plurality of vias adjacent the first and second magnetic shield elements. The MTJ sensor may be operated with circuitry configured to supply a reset current pulse through the three-dimensional coil sufficient to magnetically saturate the first and second active MTJ elements and the first and second passive MTJ elements, supply a monotonically increasing current with a polarity opposite to the reset current pulse through the three-dimensional coil, and determine a value of current through the three-dimensional coil when an output voltage of the bridge reaches an endpoint, such as zero volts.
摘要翻译：公开了具有低磁滞和高灵敏度的MTJ传感器。 MTJ传感器在一个实施例中包括具有第一和第二有源MTJ元件的桥接器，以及以惠斯通电桥配置连接的第一和第二无源MTJ元件。第一和第二磁屏蔽元件位于第一和第二无源MTJ元件之上，并且在它们之间形成间隙，其将磁通集中到第一和第二有源MTJ元件。三维线圈缠绕在第一和第二磁屏蔽元件周围，具有位于第一和第二磁屏蔽元件之下的过度绕组，以及位于第一和第二磁屏蔽元件下方的下绕组，其通过相邻的多个通孔连接在一起第一和第二磁屏蔽元件。 MTJ传感器可以用电路来操作，该电路被配置为提供通过三维线圈的复位电流脉冲，足以使第一和第二有源MTJ元件以及第一和第二无源MTJ元件磁饱和，以相反的极性提供单调增加的电流通过三维线圈到复位电流脉冲，并且当桥的输出电压达到诸如零伏特的端点时，确定通过三维线圈的电流值。

10. 发明公开

EP2056370A3 Vortex spin momentum transfer magnetotresistive device 有权
标题翻译：磁阻涡流扭矩传递装置
公开(公告)号：EP2056370A3
公开(公告)日：2013-01-02
申请号：EP08168087.8
申请日：2008-10-31
申请人： NVE Corporation
发明人： Deak, James G
IPC分类号： H01L43/08
CPC分类号： H01F10/3254 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/325 , H01L43/08 , Y10T428/21 , Y10T428/249921 , Y10T428/26
摘要： A ferromagnetic thin-film based device that transitioned between alternative magnetic states thereof through having electrical currents established therethrough and has both a reference magnetization and a free layer magnetization provided therein by vortex magnetizations.

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