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1. 发明公开

EP4199082A1 POWER AMPLIFIER MODULE AND POWER AMPLIFIER COMPRISING THE SAME 审中-实审
公开(公告)号：EP4199082A1
公开(公告)日：2023-06-21
申请号：EP21215208.6
申请日：2021-12-16
申请人： Ampleon Netherlands B.V.
发明人： BONTE DUPONT, Ariane
IPC分类号： H01L23/66 , H03F3/19 , H01L21/66 , H03F3/195 , H05K1/02 , H01L27/085
摘要： The present invention relates to a power amplifier module. The present invention further relates to a power amplifier comprising such a power amplifier module.
The power amplifier comprises a power amplifier module mounted on a first printed circuit board. The power amplifier module comprises a second printed circuit board having a first module input/output pad, and a semiconductor die having at least one power transistor integrated thereon. The power amplifier module further comprises a decoupling capacitor that is mounted on the second printed circuit board. A first terminal thereof is electrically coupled to a first module input/output pad for receiving a biasing signal for the at least one power transistor.
According to the present invention, a second terminal of the decoupling capacitor is connected to a second module input/output pad of the power amplifier module that is electrically isolated from the first module input/output pad of the power amplifier module, said second module input/output pad being electrically grounded during operation of the power amplifier.

2. 发明公开

EP4016621A1 POWER AMPLIFIER DEVICE 审中-公开
公开(公告)号：EP4016621A1
公开(公告)日：2022-06-22
申请号：EP21215192.2
申请日：2021-12-16
申请人： Ampleon Netherlands B.V.
发明人： Van der Zanden, Josephus Henricus Bartholomeus
IPC分类号： H01L23/66 , H01L23/00 , H03F3/19 , H01L23/495
摘要： The present invention relates to a power amplifier device. The present invention further relates to a semiconductor die used or to be used in such a power amplifier device. The present invention particularly relates to power amplifier devices operable at radiofrequency, RF, frequencies, more in particular in a frequency range between 100 MHz and 40 GHz.
The power amplifier device of the present invention comprises a semiconductor die on which a power transistor is integrated. The semiconductor die comprises a shunt network comprising a plurality of first bondwires arranged in series with a first capacitor, which first capacitor is arranged near an input side of the power transistor. The shunt network is configured for tuning out the output capacitance of the power transistor.
According to the transistor, the power amplifier device comprises a pair of coupled lines formed on the semiconductor die, wherein a first line of the pair of coupled lines is connected in series with the input of the power transistor, and wherein a second line of the pair of coupled lines is incorporated in the shunt network in series with the first plurality of bondwires and the first capacitor.

3. 发明公开

EP3920213A1 MOLDED AIR-CAVITY PACKAGE AND DEVICE COMPRISING THE SAME 审中-公开
公开(公告)号：EP3920213A1
公开(公告)日：2021-12-08
申请号：EP21177851.9
申请日：2021-06-04
申请人： Ampleon Netherlands B.V.
发明人： Raben, Leonardus Theodorus Maria , Meeuwsen, Franciscus Gerardus Maria , Miranda,, Jan Joseph Briones
IPC分类号： H01L23/047 , H01L23/10 , H01L23/544 , H01L23/66 , H01L23/20 , H01L23/36
摘要： The present invention relates to a molded air-cavity package. In addition, the present invention is related to a device comprising the same. The present invention is particularly related to molded air-cavity packages for radio-frequency 'RF' applications including but not limited to RF power amplifiers.
Instead of using hard-stop features that are arranged around the entire perimeter of the package in a continuous manner, the present invention proposes to use spaced apart pillars formed by first and second cover supporting elements. By using only a limited amount of pillars, e.g. three or four, the position of the cover relative to the body can be defined in a more predictable manner. This particularly holds if the pillars are arranged in the outer corners of the package.

4. 发明公开

EP3876672A1 WIRELESS SYNCHRONIZATION FOR MULTI-CHANNEL RF HEATING AND DRYING DEVICES 有权
公开(公告)号：EP3876672A1
公开(公告)日：2021-09-08
申请号：EP21151786.7
申请日：2021-01-15
申请人： Ampleon Netherlands B.V.
发明人： Tymofieiev, Yevhen
IPC分类号： H05B6/68 , H05B6/70
摘要： The present invention relates to a multi-channel RF device for heating and drying applications comprising a first and second channel. More in particular, the present invention relates to synchronization for a multi-channel RF device for heating and drying applications. More in particular, the present invention relates to a solid-state cooking device, and synchronization for a solid-state cooking device.
The multi-channel RF device according to the present invention is characterized in that the second channel is configured to wirelessly receive the first RF signal transmitted by the first channel, to extract a frequency of the first RF signal from the received first RF signal, generate, based on the extracted frequency, a second RF signal, and to transmit the second RF signal into the cavity.
By wirelessly synchronizing the RF channels, no RF hardware is required between the plurality of channels, and no frequency programming is required for the second channels. Wireless synchronization could bring down costs significantly in multi-channel RF devices, where signal sources are physically separated.

5. 发明公开

EP3731410A1 INTEGRATED PASSIVE DEVICE FOR RF POWER AMPLIFIER PACKAGE 有权
公开(公告)号：EP3731410A1
公开(公告)日：2020-10-28
申请号：EP20180247.7
申请日：2017-07-18
申请人： Ampleon Netherlands B.V.
发明人： De Boet, Johannes Adrianus Maria , Sveshtarov, Iordan Konstantinov , Van Rijs, Freerk
IPC分类号： H03F1/56 , H03F3/189 , H03F3/24 , H03H7/01 , H01L23/00
摘要： The present invention relates to a radiofrequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising such a RF power transistor package, and to an integrated passive die suitable for an RF power amplifier package.
According to the present invention, an in-package impedance network is used that is connected to the output of the RF power transistor arranged inside the package. This network comprises a first inductive element having a first and second terminal, the first terminal being electrically connected to the output of the RF transistor, a resonance unit being electrically connected to second terminal of the first inductive element, and a second capacitive element electrically connected in between the resonance unit and ground.
According to the present invention, the first capacitive element is arranged in series with the second capacitive element.

6. 发明授权

EP2991085B1 Transformer 有权转让
公开(公告)号：EP2991085B1
公开(公告)日：2020-08-26
申请号：EP14182574.5
申请日：2014-08-28
申请人： Ampleon Netherlands B.V.
发明人： Cuoco, Vittorio
IPC分类号： H01F27/28 , H01L23/66 , H03F3/00

7. 发明授权

EP2814113B1 MARCHAND BALUN AND POWER AMPLIFIER USING THE SAME 有权转让
公开(公告)号：EP2814113B1
公开(公告)日：2019-08-07
申请号：EP13290140.6
申请日：2013-06-14
申请人： Ampleon Netherlands B.V.
发明人： Bouisse, Gerard , Busgeeth, Rajeev
IPC分类号： H01P5/10

8. 发明公开

EP3439172A1 FOUR-WAY DOHERTY AMPLIFIER AND MOBILE TELECOMMUNICATIONS BASE STATION 有权
公开(公告)号：EP3439172A1
公开(公告)日：2019-02-06
申请号：EP18185872.1
申请日：2018-07-26
申请人： Ampleon Netherlands B.V.
发明人： JIANG, Xiaochuan
IPC分类号： H03F1/02 , H03F1/56 , H03F3/195 , H03F3/24 , H03F3/60
摘要： The present invention relates to a four-way Doherty amplifier. The invention further relates to a mobile telecommunications base station.
The invention proposes a new Doherty combiner topology that allows peak efficiencies to be reached at deeper back-off levels than conventional Doherty combiners.

9. 发明授权

EP2983291B1 Integrated 3-way doherty amplifier 有权转让
标题翻译：集成3路Doherty放大器
公开(公告)号：EP2983291B1
公开(公告)日：2017-12-06
申请号：EP14290235.2
申请日：2014-08-07
申请人： Ampleon Netherlands B.V.
发明人： Moronval, Xavier , Bouny, Jean-Jacques , Bouisse, Gerard
IPC分类号： H03F1/02 , H03F3/195 , H03F1/56 , H03F3/24 , H01L23/66
CPC分类号： H03F1/0288 , H01L23/66 , H01L2223/6611 , H01L2223/6644 , H03F1/565 , H03F3/195 , H03F3/245 , H03F2200/225 , H03F2200/36 , H03F2200/391 , H03F2200/408
摘要： A die is described comprising at least one 3-way Doherty amplifier (100) comprising a main stage (120), a first peak stage (130) and a second peak stage(140). An input network (110) includes a first impedance connected to an input of the first peak stage (130) and providing a -90° phase shift and a second impedance connected to an input of the second peak stage (140) and providing a 90° phase shift. An output network (150) includes a third impedance connected to the output of the first peak stage (130) and providing a 180° phase shift and a fourth impedance connected to the output of the main stage (120) and providing a 90° phase shift.

10. 发明授权

EP2675070B1 Transmitter reducing frequency pulling 失效转让
标题翻译：变送器降低频率拉动
公开(公告)号：EP2675070B1
公开(公告)日：2017-08-16
申请号：EP13169216.2
申请日：2013-05-24
申请人： Ampleon Netherlands B.V.
发明人： Van der Heijden, Mark , Ahmadi Mehr, Seyed Amir Reza , Staszewski, Robert Bogdan
IPC分类号： H04B1/04
CPC分类号： H04J1/20 , H04B1/0483 , H04B2001/0491
摘要： The invention provides a transmitter comprising two (or more) phase locked loops controlling respective oscillators, and implementing different phase modulation. Multiple phases are derived from the respective oscillators, and an edge rotator forms an output signal from a combination of the phases. The oscillators can operate at different frequencies, neither of which is an integer multiple of the other, whereas the output signals of the multiplexers of the first and second phase locked loops are closer in frequency and can be the same. This reduces the problem of pulling, with a circuit that can be implemented with low power and area and with the versatility of being digitally intensive.
摘要翻译：本发明提供了一种发射机，其包括控制各个振荡器并实现不同相位调制的两个（或更多）锁相环。多个相位从相应的振荡器导出，并且边缘旋转器形成来自相位组合的输出信号。振荡器可以以不同的频率工作，两者都不是另一个的整数倍，而第一和第二锁相环的多路复用器的输出信号在频率上更接近并且可以相同。这减少了拉动的问题，可以用低功率和面积实现的电路以及数字密集型的多功能性。

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