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1. 发明公开

EP4016621A1 POWER AMPLIFIER DEVICE 审中-公开
公开(公告)号：EP4016621A1
公开(公告)日：2022-06-22
申请号：EP21215192.2
申请日：2021-12-16
申请人： Ampleon Netherlands B.V.
发明人： Van der Zanden, Josephus Henricus Bartholomeus
IPC分类号： H01L23/66 , H01L23/00 , H03F3/19 , H01L23/495
摘要： The present invention relates to a power amplifier device. The present invention further relates to a semiconductor die used or to be used in such a power amplifier device. The present invention particularly relates to power amplifier devices operable at radiofrequency, RF, frequencies, more in particular in a frequency range between 100 MHz and 40 GHz.
The power amplifier device of the present invention comprises a semiconductor die on which a power transistor is integrated. The semiconductor die comprises a shunt network comprising a plurality of first bondwires arranged in series with a first capacitor, which first capacitor is arranged near an input side of the power transistor. The shunt network is configured for tuning out the output capacitance of the power transistor.
According to the transistor, the power amplifier device comprises a pair of coupled lines formed on the semiconductor die, wherein a first line of the pair of coupled lines is connected in series with the input of the power transistor, and wherein a second line of the pair of coupled lines is incorporated in the shunt network in series with the first plurality of bondwires and the first capacitor.

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