专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP2292813B1 Method of producing single crystal silicon 有权转让
标题翻译：一种用于生产硅einkristallischem过程
公开(公告)号：EP2292813B1
公开(公告)日：2017-01-18
申请号：EP10175492.7
申请日：2010-09-06
申请人： Sumco Techxiv Corporation
发明人： Uto, Masayuki , Tomonaga, Tuneaki , Kubota, Toshimichi , Ogawa, Fukuo , Narushima, Yasuhito
IPC分类号： C30B15/20 , C30B29/06
CPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B15/20 , C30B15/22 , C30B15/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032

2. 发明授权

EP2330234B1 SILICON SINGLE CRYSTAL PULL-UP APPARATUS 有权
标题翻译： DEVICE画出一条硅
公开(公告)号：EP2330234B1
公开(公告)日：2013-01-30
申请号：EP09802962.2
申请日：2009-07-28
申请人： Sumco Techxiv Corporation
发明人： NARUSHIMA, Yasuhito , KAWAZOE, Shinichi , OGAWA, Fukuo , KUBOTA, Toshimichi , FUKUDA, Tomohiro
IPC分类号： C30B15/04 , C30B29/06
CPC分类号： C30B15/04 , Y10T117/10 , Y10T117/1004 , Y10T117/1024 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088

3. 发明授权

EP1270769B1 METHOD FOR PRODUCING SILICON SINGLE CRYSTAL HAVING NO FLAW 有权
标题翻译：生产无缺陷硅单晶的方法
公开(公告)号：EP1270769B1
公开(公告)日：2010-11-24
申请号：EP01912484.1
申请日：2001-03-19
申请人： Sumco Techxiv Corporation
发明人： NAKAMURA, Kozo , SAISHOJI, Toshiaki , TOGAWA, Shinji , KOTOOKA, Toshirou , MAEDA, Susumu
IPC分类号： C30B29/06 , C30B15/22
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1004 , Y10T117/1008 , Y10T117/1068
摘要： A method for producing a silicon ingot having no flaw over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up from a silicon melt (13), the shape of a solid-liquid interface (14) which is a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.
摘要翻译：本发明提供一种在宽广的范围内稳定且再现性良好地制造无瑕疵的硅锭的方法，其中，从硅熔液（13）提起硅单晶（11）时，固液界面的形状作为硅熔液13与硅单晶11的边界的温度分布和被拉起的单晶的侧面11b的温度分布被适当地控制。

4. 发明公开

EP2128895A3 Semiconductor wafer 审中-公开
标题翻译：半导体晶片
公开(公告)号：EP2128895A3
公开(公告)日：2010-01-27
申请号：EP09161252.3
申请日：2009-05-27
申请人： SUMCO Corporation , Sumco Techxiv Corporation
发明人： Koyata, Sakae , Hashii, Tomohiro , Yamada, Yasunori , Yukiwaki, Satoshi , Sakamoto, Shinji , Ohmachi, Tomoko
IPC分类号： H01L21/304 , H01L29/06 , C30B15/00
CPC分类号： H01L21/304 , C30B29/06 , C30B33/10 , H01L21/02008 , H01L29/06 , Y10T428/21
摘要： A semiconductor wafer has a diameter of 450 mm and a thickness of at least 725 µm and no greater than 900 µm.

5. 发明公开

EP2128895A2 Semiconductor wafer 审中-公开
标题翻译： Halbleiter晶圆
公开(公告)号：EP2128895A2
公开(公告)日：2009-12-02
申请号：EP09161252.3
申请日：2009-05-27
申请人： SUMCO Corporation , Sumco Techxiv Corporation
发明人： Koyata, Sakae , Hashii, Tomohiro , Yamada, Yasunori , Yukiwaki, Satoshi , Sakamoto, Shinji , Ohmachi, Tomoko
IPC分类号： H01L21/304 , H01L29/06 , C30B15/00
CPC分类号： H01L21/304 , C30B29/06 , C30B33/10 , H01L21/02008 , H01L29/06 , Y10T428/21
摘要： A semiconductor wafer has a diameter of 450 mm and a thickness of at least 725 µm and no greater than 900 µm.
摘要翻译：半导体晶片的直径为450mm，厚度为725μm以上且900μm以下。

6. 发明公开

EP2103720A1 Susceptor for vapor phase epitaxial growth device 有权
标题翻译：垃圾焚烧师 - 防火墙 - Epitaxialwachstumsvorrichtung
公开(公告)号：EP2103720A1
公开(公告)日：2009-09-23
申请号：EP09001968.8
申请日：2009-02-12
申请人： SUMCO CORPORATION , Sumco Techxiv Corporation
发明人： Fujikawa, Takashi , Ishibashi, Masayuki , Iriguchi, Kazuhiro c/o Sumco Techxiv Corp., , Kawano, Kouhei c/o Sumco Techxiv Corp.,
IPC分类号： C30B25/18 , C23C16/458
CPC分类号： C30B25/12 , C23C16/4588
摘要： There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0mm 2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.
摘要翻译：提供了一种用于气相外延生长装置的基座，通过该感受器防止在装载硅晶片时的打滑，并且晶片可以被装载在基座的固定位置：其中具有倾斜面的环形凹槽变宽朝向基座的表面形成在底面的最外周上; 形成穿过基座的后表面的气体释放口，其截面积为2.0〜3.0mm 2，底面的所有开口面积的比例为0.25〜0.5％。

7. 发明授权

EP1279752B1 METHOD AND APPARATUS FOR MEASURING MELT LEVEL 有权
标题翻译：方法和设备测量熔化高度
公开(公告)号：EP1279752B1
公开(公告)日：2009-07-08
申请号：EP01926086.8
申请日：2001-05-01
申请人： Sumco Techxiv Corporation
发明人： MORIYA, Masato, c/o Sumco Techxiv Corporation , HANAMOTO, Tadayuki, c/o Sumco Techxiv Corporation , MONDEN, Hiroshi, c/o Sumco Techxiv Corporation , HAYASHIDA, Toshio, c/o Sumco Techxiv Corporation , KOTOOKA, Toshirou, c/o Sumco Techxiv Corporation
IPC分类号： C30B15/26
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/10 , Y10T117/1004
摘要： A melt level or the gap between a melt surface and a heat shield is measured accurately irrespective of how the melt surface is. A laser beam (2) from a range-finding unit (8) is reflected by a scanning mirror (24) and projected on a melt surface (3) through an entrance window (18) and a quartz prism (20) in a chamber (17) of a puller. After specular reflection, the beam forms a measurement spot (31) in the bottom of a heat shield (16) and scatters. Part of the scatter, after specular reflection at the melt surface (3) (secondary reflection), passes through the prism (20), the entrance window (18) and the scanning mirror (24) to the range-finding unit (8). The range-finding unit (8) carries out triangulation using the distance between a laser source and a photodetector therein, and the angle of incidence and the angle of the received laser beam.

8. 发明授权

EP2113939B1 Silicon wafer processing method 有权
公开(公告)号：EP2113939B1
公开(公告)日：2018-09-26
申请号：EP09159146.1
申请日：2009-04-30
申请人： Sumco Techxiv Corporation
发明人： Gotou, Isamu , Kawasaki, Tomonori
IPC分类号： H01L21/306 , H01L21/67
CPC分类号： H01L21/02052 , H01L21/02049 , H01L21/6708
摘要： A processing method of a semiconductor wafer is provided. The method comprising the steps of: removing at least part of oxide film from a surface of the semiconductor wafer; removing liquid from the surface; and providing at least partial oxide film on the surface by applying an oxidizing gas wherein a gas flow of the oxidizing gas and/or an ambient gas involved by the oxidizing gas is characterized by an unsaturated vapor pressure of the liquid such that the liquid on the surface vaporizes. The above-described steps are conducted in this order.

9. 发明授权

EP2071060B1 Single crystal manufacturing method 有权
标题翻译：单晶的制造方法
公开(公告)号：EP2071060B1
公开(公告)日：2014-10-08
申请号：EP07791100.6
申请日：2007-07-20
申请人： Sumco Techxiv Corporation
发明人： IIDA, Tetsuhiro , MATSUKUMA, Shin
IPC分类号： C30B15/14 , C30B15/20
CPC分类号： C30B15/20 , C30B15/14 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088

10. 发明公开

EP2330234A1 SILICON SINGLE CRYSTAL PULL-UP APPARATUS 有权
标题翻译：硅单晶上拉设备
公开(公告)号：EP2330234A1
公开(公告)日：2011-06-08
申请号：EP09802962.2
申请日：2009-07-28
申请人： Sumco Techxiv Corporation
发明人： NARUSHIMA, Yasuhito , KAWAZOE, Shinichi , OGAWA, Fukuo , KUBOTA, Toshimichi , FUKUDA, Tomohiro
IPC分类号： C30B15/04
CPC分类号： C30B15/04 , Y10T117/10 , Y10T117/1004 , Y10T117/1024 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： Provided is a silicon single crystal pull-up apparatus in which the airtightness of a connection means for connecting a sample tube and a supply pipe is improved and a sublimable dopant is prevented from leaking from the connection means. A silicon single crystal pull-up apparatus (1) includes a pull-up furnace (2), a sample chamber (20) in which a sublimable dopant (23) is housed, a sample tube (21) which can be raised and lowered between the interior of the sample chamber (20) and the interior of the pull-up furnace (2), a raising and lowering means (25) for raising and lowering the sample tube (21), a supply tube (22) which is installed inside the pull-up furnace (2) and supplies the sublimable dopant (23) to a melt (5), and a bonding means for bonding the sample tube (21) and the supply tube (22). The bonding means is constructed from a ball joint structure comprising a convex member (211) which projects from one end of the sample tube (21) and a concave member (221) which is provided at one end of the supply pipe (22) and is formed to be engageable with the convex member (211). The contact surfaces of the convex member (211) and the concave member (221) are formed to be curved surfaces, and a flow path is formed between the sample tube (21) and the supply tube (22).
摘要翻译：本发明提供一种硅单晶上拉装置，提高用于连接试样管和供给管的连接机构的气密性，防止升华性掺杂物从连接机构漏出。硅单晶提拉装置（1）包括：上拉炉（2），容纳升华性掺杂剂（23）的样品室（20），可升降的样品管（21）在样品室20的内部与上升炉2的内部之间设有使试样管21升降的升降装置25和供给管22，（2）内并将升华性掺杂剂（23）供给至熔液（5）的接合装置以及用于接合样品管（21）和供给管（22）的接合装置。接合装置由球形接头结构构成，该球形接头结构包括从样品管（21）的一端突出的凸形部件（211）和设置在供应管（22）的一端的凹形部件（221），以及形成为可与凸形构件（211）接合。凸部件211与凹部221的接触面形成为曲面，在试样管21与供给管22之间形成流路。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式