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1. 发明授权

EP2330234B1 SILICON SINGLE CRYSTAL PULL-UP APPARATUS 有权
标题翻译： DEVICE画出一条硅
公开(公告)号：EP2330234B1
公开(公告)日：2013-01-30
申请号：EP09802962.2
申请日：2009-07-28
申请人： Sumco Techxiv Corporation
发明人： NARUSHIMA, Yasuhito , KAWAZOE, Shinichi , OGAWA, Fukuo , KUBOTA, Toshimichi , FUKUDA, Tomohiro
IPC分类号： C30B15/04 , C30B29/06
CPC分类号： C30B15/04 , Y10T117/10 , Y10T117/1004 , Y10T117/1024 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088

2. 发明公开

EP2330234A1 SILICON SINGLE CRYSTAL PULL-UP APPARATUS 有权
标题翻译：硅单晶上拉设备
公开(公告)号：EP2330234A1
公开(公告)日：2011-06-08
申请号：EP09802962.2
申请日：2009-07-28
申请人： Sumco Techxiv Corporation
发明人： NARUSHIMA, Yasuhito , KAWAZOE, Shinichi , OGAWA, Fukuo , KUBOTA, Toshimichi , FUKUDA, Tomohiro
IPC分类号： C30B15/04
CPC分类号： C30B15/04 , Y10T117/10 , Y10T117/1004 , Y10T117/1024 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： Provided is a silicon single crystal pull-up apparatus in which the airtightness of a connection means for connecting a sample tube and a supply pipe is improved and a sublimable dopant is prevented from leaking from the connection means. A silicon single crystal pull-up apparatus (1) includes a pull-up furnace (2), a sample chamber (20) in which a sublimable dopant (23) is housed, a sample tube (21) which can be raised and lowered between the interior of the sample chamber (20) and the interior of the pull-up furnace (2), a raising and lowering means (25) for raising and lowering the sample tube (21), a supply tube (22) which is installed inside the pull-up furnace (2) and supplies the sublimable dopant (23) to a melt (5), and a bonding means for bonding the sample tube (21) and the supply tube (22). The bonding means is constructed from a ball joint structure comprising a convex member (211) which projects from one end of the sample tube (21) and a concave member (221) which is provided at one end of the supply pipe (22) and is formed to be engageable with the convex member (211). The contact surfaces of the convex member (211) and the concave member (221) are formed to be curved surfaces, and a flow path is formed between the sample tube (21) and the supply tube (22).
摘要翻译：本发明提供一种硅单晶上拉装置，提高用于连接试样管和供给管的连接机构的气密性，防止升华性掺杂物从连接机构漏出。硅单晶提拉装置（1）包括：上拉炉（2），容纳升华性掺杂剂（23）的样品室（20），可升降的样品管（21）在样品室20的内部与上升炉2的内部之间设有使试样管21升降的升降装置25和供给管22，（2）内并将升华性掺杂剂（23）供给至熔液（5）的接合装置以及用于接合样品管（21）和供给管（22）的接合装置。接合装置由球形接头结构构成，该球形接头结构包括从样品管（21）的一端突出的凸形部件（211）和设置在供应管（22）的一端的凹形部件（221），以及形成为可与凸形构件（211）接合。凸部件211与凹部221的接触面形成为曲面，在试样管21与供给管22之间形成流路。

3. 发明公开

EP2319962A1 SILICON SINGLE CRYSTAL PULL-UP APPARATUS 有权
标题翻译：硅单晶上拉设备
公开(公告)号：EP2319962A1
公开(公告)日：2011-05-11
申请号：EP09802961.4
申请日：2009-07-28
申请人： Sumco Techxiv Corporation
发明人： NARUSHIMA, Yasuhito , KAWAZOE, Shinichi , OGAWA, Fukuo , KUBOTA, Toshimichi , FUKUDA, Tomohiro
IPC分类号： C30B15/04
CPC分类号： C30B15/04 , C30B15/14
摘要： Provided is a silicon single crystal pull-up apparatus which is compact and has a raising and lowering means with which the position of a sample tube can be easily corrected. A silicon single crystal pull-up apparatus (1) is used to pull up a doped silicon single crystal from a melt by means of the Czochralski process and includes a pull-up furnace (2), a sample chamber (20) which is externally mounted on the pull-up furnace (2) and houses a sublimable dopant (23), a blocking means (24) for thermally isolating the interior of the pull-up furnace (2) and the interior of the sample chamber (20), a sample tube (21) which can be raised and lowered between the interior of the sample chamber (20) and the interior of the pull-up furnace (2), and a raising and lowering means (25) which is provided with guide rails (25b (25c, 25d)) on which the sample tube (21) can slide and a wire mechanism (25a) by which the sample tube (21) is raised and lowered along the guide rails (25b).
摘要翻译：本发明提供一种小型的单晶硅单晶提拉装置，具有能够容易地校正试料管的位置的升降单元。采用单晶硅拉晶装置（1）通过切克劳斯基工艺从熔体中拉出掺杂硅单晶，并包括上拉炉（2），外部的样品室（20）（2）内并装有可升华的掺杂剂（23）;阻隔装置（24），用于将所述上拉炉（2）的内部与所述样品室（20）的内部隔热; 能够在样品室20的内部与上拉炉2的内部之间升降的样品管21以及设置有导轨20的升降装置25，（21）能够滑动的导轨（25b，25c，25d）以及使导管（21）沿着导轨（25b）升降的导丝机构（25a）。

4. 发明授权

EP2319962B1 SILICON SINGLE CRYSTAL PULL-UP APPARATUS 有权
标题翻译：硅单晶上拉设备
公开(公告)号：EP2319962B1
公开(公告)日：2013-01-30
申请号：EP09802961.4
申请日：2009-07-28
申请人： Sumco Techxiv Corporation
发明人： NARUSHIMA, Yasuhito , KAWAZOE, Shinichi , OGAWA, Fukuo , KUBOTA, Toshimichi , FUKUDA, Tomohiro
IPC分类号： C30B15/04 , C30B29/06 , C30B15/14
CPC分类号： C30B15/04 , C30B15/14

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