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1. 发明授权

EP2342753B1 INSULATED GATE BIPOLAR TRANSISTOR 有权转让
公开(公告)号：EP2342753B1
公开(公告)日：2018-01-17
申请号：EP09818446.8
申请日：2009-09-30
申请人： IXYS CORPORATION
发明人： SEOK, Kyoung-Wook , TSUKANOV, Vladimir
IPC分类号： H01L29/739 , H01L29/08 , H01L29/423 , H01L29/06
CPC分类号： H01L29/7397 , H01L29/0623 , H01L29/0696 , H01L29/08 , H01L29/0834 , H01L29/4238
摘要： A trench structure of an insulated gate bipolar transistor (IGBT) is formed as a trench net in a P region and extends into an N− layer. The trench net separates the P region into P wells and floating P layers. The P wells contact an emitter electrode while the floating P layers are not in direct contact with the emitter electrode. A gate formed of conductive material and having a surrounding insulation oxide layer is formed in the trench net. An N+ layer may be formed above each floating P layer under the gate. The floating P layers are isolated from the gate and are also not connected to the emitter electrode.

2. 发明授权

EP1394860B1 Power devices with improved breakdown voltages 有权转让
标题翻译：以改善击穿电压功率器件
公开(公告)号：EP1394860B1
公开(公告)日：2014-02-26
申请号：EP03018788.4
申请日：2003-08-28
申请人： IXYS CORPORATION
发明人： Jayappa Veeeramma, Subhas C. Bose
IPC分类号： H01L29/06 , H01L29/74 , H01L29/861
CPC分类号： H01L29/0834 , H01L29/0619 , H01L29/0638 , H01L29/7395 , H01L29/74 , H01L29/861

3. 发明公开

EP2696492A1 High efficiency, low-power power supply circuit 审中-公开
标题翻译： Hocheffiziente Niederspannungs-Stromversorgungsschaltung
公开(公告)号：EP2696492A1
公开(公告)日：2014-02-12
申请号：EP13178847.3
申请日：2013-08-01
申请人： IXYS CORPORATION
发明人： Neyman, Leonid A.
IPC分类号： H02M7/217
CPC分类号： H02M7/2176 , H02J7/345 , H02M2001/0006
摘要： A power supply circuit (20) includes a rectifier (25) , a charging circuit 26), and a storage capacitor (22). An AC signal (VAC) is rectified by the rectifier (25) thereby generating a rectified signal (VR) between a first node (43) and a ground node (GND). The capacitor (22) is coupled between an output node (+) and the grond node (GND). If the rectified signal (VR) is greater than a first predetermined voltage then the output node is decoupled from the first node. If the rectified signal (VR) is below the first predetermined voltage then the charging circuit supplies a substantially constant charging current from the firs node, through the charging circuit (26), to the output node, and to the capacitor (22), provided that the voltage (Vo) on the capacitor is below a second predetermined voltage (Vomax) and provided that the rectfied signal is adequately high with respect to the capacitor voltage (Vo). Due to the charging current, the voltage on the storage capacitor is restored to the desired second predetermined voltage.
摘要翻译：电源电路（20）包括整流器（25），充电电路26）和存储电容器（22）。交流信号（VAC）由整流器（25）整流，从而在第一节点（43）和接地节点（GND）之间产生整流信号（VR）。电容器（22）耦合在输出节点（+）和结点（GND）之间。如果整流信号（VR）大于第一预定电压，则输出节点与第一节点分离。如果整流信号（VR）低于第一预定电压，则充电电路从第一节点通过充电电路（26）将基本恒定的充电电流提供给输出节点和提供给电容器（22）的电容器电容器上的电压（Vo）低于第二预定电压（Vomax），并且只要相对于电容器电压（Vo），纠偏信号足够高。由于充电电流，存储电容器上的电压恢复到期望的第二预定电压。

4. 发明授权

EP1601015B9 Heatsink for power devices 有权
标题翻译：散热器功率部件
公开(公告)号：EP1601015B9
公开(公告)日：2011-01-19
申请号：EP05011633.4
申请日：2005-05-30
申请人： IXYS CORPORATION , HÜTTINGER Elektronik GmbH + Co. KG
发明人： Coleman, Charles
IPC分类号： H01L23/46 , H01L23/473
CPC分类号： H01L23/473 , H01L2924/0002 , H01L2924/3011 , H02M7/5387 , H05K7/20927 , H01L2924/00

5. 发明授权

EP1601015B1 Heatsink for power devices 有权
标题翻译：散热器功率部件
公开(公告)号：EP1601015B1
公开(公告)日：2010-09-22
申请号：EP05011633.4
申请日：2005-05-30
申请人： IXYS CORPORATION , HÜTTINGER Elektronik GmbH + Co. KG
发明人： Coleman, Charles
IPC分类号： H01L23/46 , H01L23/473
CPC分类号： H01L23/473 , H01L2924/0002 , H01L2924/3011 , H02M7/5387 , H05K7/20927 , H01L2924/00

6. 发明公开

EP1601099A1 RF generator with phase controlled mosfets 有权
标题翻译： HF发生器功率MOSFET
公开(公告)号：EP1601099A1
公开(公告)日：2005-11-30
申请号：EP05011634.2
申请日：2005-05-30
申请人： IXYS CORPORATION
发明人： Coleman, Charles
IPC分类号： H03F3/217 , H05H1/36 , H05H1/46
CPC分类号： H01L23/473 , H01L2924/0002 , H01L2924/3011 , H02M7/5387 , H05K7/20927 , H01L2924/00
摘要： A radio frequency (RF) generator comprises a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an output node coupling the first and second half bridges and RF signals to a load; positive and negative rails coupled to an AC power source via rectifier; a first blocking capacitor provided between the positive rail and the load; and a second blocking capacitor provided between the negative rail and the load. The first and second blocking capacitors are configured to isolate the load from the AC power source.
摘要翻译：射频（RF）发生器包括包括第一和第二功率晶体管的第一半桥; 包括第一和第二功率晶体管的第二半桥; 将第一和第二半桥和RF信号耦合到负载的输出节点; 通过整流器耦合到AC电源的正和负极轨; 设置在正轨和负载之间的第一隔离电容器; 以及设置在负轨和负载之间的第二阻塞电容器。第一和第二隔离电容器被配置为将负载与AC电源隔离。

7. 发明公开

EP1601098A1 RF generator with commutation inductor 有权
标题翻译： HF发电机mit Schaltspule
公开(公告)号：EP1601098A1
公开(公告)日：2005-11-30
申请号：EP05011632.6
申请日：2005-05-30
申请人： IXYS CORPORATION
发明人： Coleman, Charles
IPC分类号： H03F3/217 , H05H1/36 , H05H1/46
CPC分类号： H01L23/473 , H01L2924/0002 , H01L2924/3011 , H02M7/5387 , H05K7/20927 , H01L2924/00
摘要： A radio frequency (RF) generator comprises a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an RF output node coupling output nodes of the first and second half bridges, the output node outputting RF signals to a load; positive and negative rails coupled to a power source; and a first commutation inductor provided to store energy to commutate at least one of the half bridges.
摘要翻译：射频（RF）发生器包括包括第一和第二功率晶体管的第一半桥; 包括第一和第二功率晶体管的第二半桥; RF输出节点耦合第一和第二半桥的输出节点，输出节点将RF信号输出到负载; 耦合到电源的正极和负极; 以及第一换向电感器，用于存储能量以换向所述半桥中的至少一个的能量。

8. 发明公开

EP1601097A1 RF generator with reduced size and weight 有权
标题翻译：高频发生器减速机Grösseund Gewicht
公开(公告)号：EP1601097A1
公开(公告)日：2005-11-30
申请号：EP05011631.8
申请日：2005-05-30
申请人： IXYS CORPORATION
发明人： Coleman, Charles
IPC分类号： H03F3/217 , H05H1/36 , H05H1/46
CPC分类号： H01L23/473 , H01L2924/0002 , H01L2924/3011 , H02M7/5387 , H05K7/20927 , H01L2924/00
摘要： A radio frequency (RF) generator comprises a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an output node coupling the first and second half bridges and RF signals to a load; positive and negative rails coupled to a power source; a first blocking capacitor provided between the positive rail and the load; a second blocking capacitor provided between the negative rail and the load; and an offline rectification circuit configured receive an alternating current (AC) from an AC power source and output a direct current (DC) to the first and second bridges, wherein the first and second blocking capacitors are configured to isolate the load from the AC power source.
摘要翻译：射频（RF）发生器包括包括第一和第二功率晶体管的第一半桥; 包括第一和第二功率晶体管的第二半桥; 将第一和第二半桥和RF信号耦合到负载的输出节点; 耦合到电源的正极和负极; 设置在正轨和负载之间的第一隔离电容器; 设置在负轨和负载之间的第二隔离电容器; 并且离线整流电路被配置为从AC电源接收交流电（AC）并将直流（DC）输出到第一和第二桥，其中第一和第二阻塞电容器被配置为将负载与AC电力隔离资源。

9. 发明公开

EP1255302A2 Method for fabricating forward and reverse blocking devices 有权
标题翻译： Verfahren zur HerstellungVorwärts-undRückwärtssperranordnungen
公开(公告)号：EP1255302A2
公开(公告)日：2002-11-06
申请号：EP02007435.7
申请日：2002-03-28
申请人： IXYS CORPORATION
发明人： Kelberlau, Ulrich , Ingram, Peter , Zommer, Nathan
IPC分类号： H01L29/739 , H01L21/331 , H01L29/06
CPC分类号： H01L29/66333 , H01L29/0619 , H01L29/7395
摘要： A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.
摘要翻译：功率器件包括设置在第一导电类型的半导体衬底的有源区内的栅电极，源电极和漏电极。在有源区域的周边设置有第二导电性的垂直扩散区域（117）。垂直扩散区域（117）从衬底的顶表面连续延伸到衬底的底表面。垂直扩散区域（117）包括具有第一深度的上部和具有基本上大于第一深度的第二深度的下部。

10. 发明公开

EP1255298A2 Power device with a plastic molded package and direct bonded substrate 审中-公开
标题翻译： Ge at at at at at at at at at at at at at at at at at
公开(公告)号：EP1255298A2
公开(公告)日：2002-11-06
申请号：EP02007434.0
申请日：2002-03-28
申请人： IXYS CORPORATION
发明人： Choi, Kang Rim
IPC分类号： H01L23/373
CPC分类号： H01L23/49562 , H01L23/49568 , H01L24/45 , H01L24/48 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48472 , H01L2924/01079 , H01L2924/01322 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A power device compatible with an SOT 227 package standard. The device includes a substrate including a first conductive layer, a second dielectric layer, and a third conductive layer. The first conductive layer is bonded to the second dielectric layer, and the second dielectric layer is bonded to the third conductive layer. The first and third conductive layers are electrically isolated from each other. The first conductive layer has been patterned to provide at least first and second conductive blocks. A semiconductor die is bonded to the first block of the first conductive layer of the substrate. A terminal lead is coupled to the second block of the first conductive layer of the substrate.
摘要翻译：兼容SOT 227封装标准的电源设备。该器件包括包括第一导电层，第二介电层和第三导电层的衬底。第一导电层与第二电介质层接合，第二电介质层与第三导电层接合。第一和第三导电层彼此电隔离。第一导电层已被图案化以提供至少第一和第二导电块。将半导体管芯接合到衬底的第一导电层的第一块。端子引线耦合到衬底的第一导电层的第二块。

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