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    • 4. 发明公开
    • A method for automated code conversion
    • 一种用于自动代码转换方法
    • EP1975791A3
    • 2009-01-07
    • EP08153186.5
    • 2008-03-21
    • Interuniversitair Microelektronica Centrum (IMEC)Katholieke Universiteit Leuven
    • Raghavan, PraveenJayapala, MuraliCathoor, FranckyJaved, AbsarLambrechts, Andy
    • G06F9/45
    • G06F8/52
    • The present invention provides a method for converting application code into optimised application code or into execution code suitable for execution on a computation engine with an architecture comprising at least a first and a second level of data memory units. The method comprises:
      obtaining application code, the application code including data transfer operations between said levels of memory units; and
      converting at least a part of the application code such that data transfer operations between and data layout within said memory units are modified. The modification may include an improvement with respect to energy and/or performance. The converting step comprises:
      (a) scheduling of data transfer operations from a first level of memory units to a second level of memory units such that accesses of data accessed multiple times are brought closer together in time than would be the case in the original code, and thereafter,
      (b) deciding on layout of the data in the second level of memory units to improve the data layout locality such that data which is accessed closer together in time is also brought closer together in the layout than would be the case in the original code,

      whereby step (a) does not decide on the internal organization of at least some of the data transferred, hence fixing the scheduling of data transfer operations only partially while also partially, but not yet fully, fixing the placement of all the data transferred, thereby providing freedom to subsequent step (b).
    • 5. 发明公开
    • Semiconductor device
    • 半导体器件
    • EP2009679A1
    • 2008-12-31
    • EP07012358.3
    • 2007-06-25
    • Interuniversitair Microelektronica Centrum (IMEC)
    • Lenoble, DamienCollaert, Nadine
    • H01L21/033H01L29/786
    • H01L21/0337H01L21/26506H01L29/66795H01L29/785
    • The present invention provides a method for forming a semiconductor device (10) on a substrate (1) having a first major surface lying in a plane. The method comprises, after patterning the substrate (1) to form at least one structure (20) extending from the substrate (1) in a direction substantially perpendicular to the plane of the major surface of the substrate, forming locally modified regions (6) at locations in the substrate which are not covered by the at least one structure (20), thus locally increasing etching resistance of these regions (6). Forming locally modified regions may prevent under-etching of the at least one structure during further process steps in the formation of the semiconductor device (10). Forming locally modified regions (6) may be performed by implanting implantation elements into regions of the substrate (1) not covered by the at least one structure (20). The present invention furthermore provides a semiconductor device obtained by the method according to embodiments of the invention. The semiconductor devices according to embodiments of the invention have good electrical properties and good mechanical stability.
    • 本发明提供了一种用于在具有位于平面中的第一主表面的衬底(1)上形成半导体器件(10)的方法。 该方法包括,在图案化衬底(1)以形成从衬底(1)沿基本上垂直于衬底的主表面的平面延伸的至少一个结构(20)之后,形成局部改性区域(6) 在衬底中未被至少一个结构(20)覆盖的位置处,因此局部地增加这些区域(6)的抗蚀刻性。 形成局部改性区域可以防止在形成半导体器件(10)的进一步工艺步骤期间至少一个结构的蚀刻不足。 形成局部改性区域(6)可以通过将注入元件注入未被所述至少一个结构(20)覆盖的衬底(1)的区域中来执​​行。 本发明还提供了通过根据本发明的实施例的方法获得的半导体器件。 根据本发明实施例的半导体器件具有良好的电性能和良好的机械稳定性。