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    • 85. 发明公开
    • SEMICONDUCTOR DEVICE
    • HALBLEITERBAUELEMENT
    • EP1628399A4
    • 2006-07-26
    • EP03730682
    • 2003-05-28
    • FUJITSU LTD
    • UNO OSAMU
    • H03K19/00H01L27/04H03K19/003H03K19/0175
    • H03K19/00315H03K17/0822H03K17/102
    • A semiconductor device having a terminal BUS being inputted with an applying voltage VBUS higher than a power supply voltage VDD, wherein a gate terminal G4 is applied with the power supply voltage VDD minus a threshold voltage Vthn when the voltage VBUS is lower than the power supply voltage VDD plus a threshold voltage Vthp and a PMOS transistor P4 is conducted. A gate terminal G2 is supplied with the power supply voltage VDD and a PMOS transistor P2 is turned off. When the voltage VBUS is equal to or higher than the power supply voltage VDD plus the threshold voltage Vthp, the PMOS transistor P4 is turned off by supplying the voltage VBUS to the gate terminal G4, while furthermore, a PMOS transistor P3 is conducted and the PMOS transistor P4 is turned off by supplying the voltage VBUS to the gate terminal G2. Unnecessary leak current is not fed from the terminal BUS regardless of the applying voltage VBUS and a correct voltage level can be sustained.
    • 一种具有端子BUS的半导体器件被输入高于电源电压VDD的施加电压VBUS,其中当电压VBUS低于电源时,栅极端子G4被施加电源电压VDD减去阈值电压Vthn 电压VDD加上阈值电压Vthp和PMOS晶体管P4。 向栅极端子G2提供电源电压VDD,并且PMOS晶体管P2截止。 当电压VBUS等于或高于电源电压VDD加上阈值电压Vthp时,通过将电压VBUS提供给栅极端子G4,PMOS晶体管P4截止,而此外,PMOS晶体管P3导通,并且 通过将电压VBUS提供给栅极端子G2来关闭PMOS晶体管P4。 不管施加电压VBUS如何,都不会从端子BUS馈送不必要的泄漏电流,并且可以维持正确的电压电平。