专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明公开

EP0111650A3 Double-channel planar heterostructure semiconductor laser 失效
标题翻译：双通道平面结构半导体激光器
公开(公告)号：EP0111650A3
公开(公告)日：1986-03-12
申请号：EP83109574
申请日：1983-09-26
申请人： NEC CORPORATION , NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Mito, Ikuo , Kobayashi, Kohroh , Ikegami, Tetsuhiko
IPC分类号： H01S03/19
CPC分类号： H01S5/227 , H01S5/06213 , H01S5/2277
摘要： The semiconductor laser comprises a semiconductor substrate (1) of a first conductivity type, a multi-layer double heterostructure (2 to 4) including successively at least a first cladding semiconductor layer (2) of the first conductivity type, an active semiconductor layer (3), and a second cladding semiconductor layer (4) of a second conductivity type. The active semiconductor layer (3) has a narrower bandgap than those of the first and second cladding semiconductor layers (2 and 4, respectively). A stripe portion (30) with channels (40, 41) formed along both sides of the stripe (30) extends through the second cladding semiconductor layer (4) and the active semiconductor layer (3) to reach the first cladding layer (2). A current blocking layer (5 to 7) formed on the multi-layer double heterostructure except for the top surface of the stripe portion (30) includes a first blocking semiconductor layer (5) of the second conductivity type, a second blocking semiconductor layer (7) of the first conductivity type, and a third semiconductor layer (6) interposed between the first and second blocking semiconductor layers (5 and 7, respectively) and having a smaller carrier concentration than that of each of the first and second blocking semiconductor layers (5 and 7, respectively). A burying semiconductor layer (8) of the second conductivity type buries the top surface of the stripe portion (30) and the current blocking layer (5 to 7). A pair of electrodes (20, 21) supplies a voltage to bias the semiconductor laser which is excellent in high frequency response characteristic, performance and reliability due to its improved current confinement structure.

82. 发明公开

EP0111650A2 Double-channel planar heterostructure semiconductor laser 失效
标题翻译： Zweikanaliger Planar-Heterostruktur-Halbleiterlaser。
公开(公告)号：EP0111650A2
公开(公告)日：1984-06-27
申请号：EP83109574.0
申请日：1983-09-26
申请人： NEC CORPORATION , NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Mito, Ikuo , Kobayashi, Kohroh , Ikegami, Tetsuhiko
IPC分类号： H01S3/19
CPC分类号： H01S5/227 , H01S5/06213 , H01S5/2277
摘要： The semiconductor laser comprises a semiconductor substrate (1) of a first conductivity type, a multi-layer double heterostructure (2 to 4) including successively at least a first cladding semiconductor layer (2) of the first conductivity type, an active semiconductor layer (3), and a second cladding semiconductor layer (4) of a second conductivity type. The active semiconductor layer (3) has a narrower bandgap than those of the first and second cladding semiconductor layers (2 and 4, respectively). A stripe portion (30) with channels (40, 41) formed along both sides of the stripe (30) extends through the second cladding semiconductor layer (4) and the active semiconductor layer (3) to reach the first cladding layer (2). A current blocking layer (5 to 7) formed on the multi-layer double heterostructure except for the top surface of the stripe portion (30) includes a first blocking semiconductor layer (5) of the second conductivity type, a second blocking semiconductor layer (7) of the first conductivity type, and a third semiconductor layer (6) interposed between the first and second blocking semiconductor layers (5 and 7, respectively) and having a smaller carrier concentration than that of each of the first and second blocking semiconductor layers (5 and 7, respectively). A burying semiconductor layer (8) of the second conductivity type buries the top surface of the stripe portion (30) and the current blocking layer (5 to 7). A pair of electrodes (20, 21) supplies a voltage to bias the semiconductor laser which is excellent in high frequency response characteristic, performance and reliability due to its improved current confinement structure.
摘要翻译：半导体激光器包括第一导电类型的半导体衬底（1），连续至少包括第一导电类型的第一包层半导体层（2）的多层双异质结构（2至4），有源半导体层 3）和第二导电类型的第二包层半导体层（4）。有源半导体层（3）的带隙比第一和第二包覆半导体层（分别为2和4）窄。具有沿条条（30）两侧形成的通道（40,41）的条形部分（30）延伸穿过第二包层半导体层（4）和有源半导体层（3）到达第一包层（2）。形成在除了条状部分（30）的顶表面之外的多层双异质结构上的电流阻挡层（5至7）包括第二导电类型的第一阻挡半导体层（5），第二阻挡半导体层 7），以及插入在第一和第二阻挡半导体层（5和7）之间并且具有比每个第一和第二阻挡半导体层的载流子浓度更小的载流子浓度的第三半导体层（6）（分别为5和7）。第二导电类型的埋入半导体层（8）埋在条状部分（30）和电流阻挡层（5至7）的顶表面。由于电流限制结构的改善，一对电极（20,21）提供高频响应特性，性能和可靠性优异的偏压半导体激光器的电压。

83. 发明公开

EP1246329A3 Optical semiconductor device and fabricating method thereof 审中-公开
标题翻译：的光半导体装置及其制造方法
公开(公告)号：EP1246329A3
公开(公告)日：2004-12-22
申请号：EP02006681.7
申请日：2002-03-26
申请人： Kabushiki Kaisha Toshiba
发明人： Matsuyama, Takayuki
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/0425 , H01S5/0655 , H01S5/2205 , H01S5/2206 , H01S5/2213 , H01S5/2214 , H01S5/2275 , H01S5/2277
摘要： An optical semiconductor device having a low threshold current and easiness of a single transverse mode oscillation is provided. The optical semiconductor device has a low device parasitic capacitance that allows a direct modulation at high speed. The optical semiconductor device comprises a first conduction type substrate, a stripe shaped active layer formed on the first conduction type substrate, a mesa shaped burying layer formed around the active layer and having a larger band gap than that of the active layer, and a groove that electrically isolates the burying layer, wherein the section of the burying layer is in an inverse trapezoid shape of which the upper base side is longer than the lower base side.

84. 发明公开

EP1391972A1 Laser utilizing a microdisk resonator 审中-公开
标题翻译：激光丝锥微分子共振仪
公开(公告)号：EP1391972A1
公开(公告)日：2004-02-25
申请号：EP03013829.1
申请日：2003-06-18
申请人： Agilent Technologies Inc
发明人： Tan, Michael R. , Lin, Chao-Kun , Corzine, Scott
IPC分类号： H01S5/10
CPC分类号： H01S5/1021 , G02B6/12007 , G02F1/0118 , G02F1/17 , G02F1/174 , G02F1/19 , G02F1/3137 , G02F2201/066 , G02F2202/108 , G02F2203/15 , H01S5/0614 , H01S5/1032 , H01S5/1042 , H01S5/1071 , H01S5/142 , H01S5/227 , H01S5/2275 , H01S5/2277 , H01S5/323 , H01S2301/173
摘要： A light source[50, 90] that includes first and second waveguides[21, 22] and a passive resonator[30] for coupling light between the waveguides. The waveguides include a gain region[23] for amplifying light of a desired wavelength, a transparent region[25], and an absorption region[27]. The passive resonator couples light of the desired wavelength between the first and second transparent regions of the first and second waveguides and has a resonance at that wavelength. The resonator[30] is preferably a microdisk resonator. The index of refraction of the microdisk resonator can be altered to select the desired wavelength. A second microdisk resonator[101] having a different radius may be incorporated to increase the tuning range of the light source. The resonator is preferably constructed over the waveguides with an air gap[132] between the resonator and the substrate[20] in which the waveguides are constructed.
摘要翻译：包括第一和第二波导Ä21,22 A的光源Ä90，以及用于在所述波导之间耦合光的无源谐振器。波导包括用于放大所需波长的光的增益区域2323，透明区域2525以及吸收区域227a。无源谐振器将期望波长的光耦合在第一和第二波导的第一和第二透明区域之间，并且在该波长处具有谐振。谐振器30A30优选地是微型磁盘谐振器。可以改变微盘谐振器的折射率以选择所需的波长。可以并入具有不同半径的第二微盘谐振器，以增加光源的调谐范围。谐振器优选地构造在波导上，在谐振器和构成波导的基片之间具有气隙。

85. 发明公开

EP0911929A3 Semiconductor laser and method for manufacturing the same 审中-公开
标题翻译：半导体激光器和制造过程
公开(公告)号：EP0911929A3
公开(公告)日：2001-03-21
申请号：EP98119871.6
申请日：1998-10-20
申请人： NEC CORPORATION
发明人： Furushima, Yuji c/o NEC Corporation
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： H01L33/0062 , H01S5/2205 , H01S5/227 , H01S5/2272 , H01S5/2277
摘要： In the pattern of a selective growth mask for directly forming an active layer, open stripes for growing recombination layers to be inserted into a current blocking are formed in addition to an open stripe for growing the active layer. By this mask pattern, the position and band gap of the recombination layers are controlled. Whereby, at an arbitrary position in the vicinity of the active layer, recombination layers having an arbitrary band gap can be batch formed together with the active layer. Thus, a semiconductor laser element with an excellent high-temperature high-output characteristic can be fabricated with good uniformity and reproducibility.

86. 发明公开

EP1022826A3 Semiconductor laser and method of manufacturing the same 审中-公开
公开(公告)号：EP1022826A3
公开(公告)日：2000-11-15
申请号：EP00100085.0
申请日：2000-01-05
申请人： NEC CORPORATION
发明人： Inomoto, Yasumasa, c/o NEC Corporation
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2235 , H01S5/2272 , H01S5/2277
摘要： In a semiconductor laser, an active layer mesa stripe (103) is formed on a mesa stripe (102) of a semiconductor substrate (101). Current blocking layers (104) are formed on the semiconductor substrate around the mesa stripe on both sides of the active layer mesa stripe. A clad layer (105) is formed on the active layer mesa stripe and the current blocking layers.

87. 发明授权

EP0772268B1 Laser diode having narrowed radiation angle characteristic 失效
标题翻译：具有窄辐射角特性的激光二极管
公开(公告)号：EP0772268B1
公开(公告)日：1999-06-23
申请号：EP96117544.5
申请日：1996-10-31
申请人： NEC CORPORATION
发明人： Yamada, Hirohito
IPC分类号： H01S3/085 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/1014 , H01S5/106 , H01S5/12 , H01S5/2004 , H01S5/2272 , H01S5/2277 , H01S5/32 , H01S5/3409 , H01S5/3421 , H01S2301/18

88. 发明公开

EP0772268A1 Laser diode having narrowed radiation angle characteristic 失效
标题翻译：激光二极管增强器Strahlungswinkel-Charakteristik
公开(公告)号：EP0772268A1
公开(公告)日：1997-05-07
申请号：EP96117544.5
申请日：1996-10-31
申请人： NEC CORPORATION
发明人： Yamada, Hirohito
IPC分类号： H01S3/085 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/1014 , H01S5/106 , H01S5/12 , H01S5/2004 , H01S5/2272 , H01S5/2277 , H01S5/32 , H01S5/3409 , H01S5/3421 , H01S2301/18
摘要： An active layer 102 and a clad layer 103 are formed on a semiconductor substrate 101. The active layer including an optical guide layer and an optical confinement layer is formed so that the thickness of the active layer gradually decreases toward a light-emission-side end facet. Since a spot size is gradually expanded toward an emission end, the radiation angle of an emitted beam is narrowed and characteristics including a threshold current become superior.
摘要翻译：有源层102和覆盖层103形成在半导体衬底101上。包括光导层和光限制层的有源层被形成为使得有源层的厚度朝着发光侧端部逐渐减小面。由于光斑尺寸朝向发射端逐渐扩大，所以发射光束的辐射角变窄，并且包括阈值电流的特性变得更高。

89. 发明公开

EP0621665A3 Semiconductor double-channel-planar-buried-heterostructure laser diode effective against leakage current 失效
标题翻译： Zweikanalige Planar-Vergrabene-Heterostruktur-Laserdiode mit Niedrigem Lechstrom。
公开(公告)号：EP0621665A3
公开(公告)日：1995-01-11
申请号：EP94104451.3
申请日：1994-03-21
申请人： NEC CORPORATION
发明人： Ishida, Tomoko, c/o NEC Corporation
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/2206 , H01S5/227 , H01S5/2277 , H01S5/34306 , H01S5/3434
摘要： A semiconductor double-channel-planar-buried-heterostructure laser diode has a pair of double channel structures (26/27) provided on both sides of a multiple quantum well structure (23) for blocking leakage current, and the leakage current is decreased by a carrier density of a current blocking layer (26) of each double channel structure ranging between 3 x 10¹⁷ cm⁻³ and 1 x 10¹⁸ cm⁻³ and equal to or less than a carrier density of a cladding layer (24) on the multiple quantum well structure, a width of each double channel structure ranging between 3.0 microns and 5.0 microns or a width of the multiple quantum well structure ranging between 1.6 microns and 2.2 microns.
摘要翻译：半导体双通道平面埋置异质结激光二极管在多量子阱结构（23）的两侧设置有一对双通道结构（26/27），用于阻断漏电流，漏电流减小每个双通道结构的电流阻挡层（26）的载流子密度范围在3×10 -7 cm -3和1×10 8 cm -3之间 >并且等于或小于多量子阱结构上的包层（24）的载流子密度，每个双通道结构的宽度在3.0微米至5.0微米之间，或多量子阱结构的宽度在1.6 微米和2.2微米。

90. 发明公开

EP0617471A2 Optical functional devices, integrated optical devices, and methods for producing such devices 失效
标题翻译：光学琐事，集成光学器件和它们的制造方法。
公开(公告)号：EP0617471A2
公开(公告)日：1994-09-28
申请号：EP94104699.7
申请日：1994-03-24
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Nakao, Masashi , Kondou, Yasuhiro , Okayasu, Masanobu , Naganuma, Mitsuru , Suzuki, Yasuhiro , Yuda, Masahiro , Mitomi, Osamu , Kasaya, Kazuo , Nakano, Junichi , Yokoyama, Kiyoyuki
IPC分类号： H01L33/00 , H01L31/0352 , H01L31/18 , H01S3/19 , H01S3/25 , G02B6/42
CPC分类号： H01L33/06 , B82Y20/00 , G02B6/12004 , G02B6/122 , G02B6/1228 , G02B6/131 , G02B6/42 , G02B2006/12107 , G02B2006/12128 , H01L31/035236 , H01L31/1844 , H01L33/0062 , H01S5/0207 , H01S5/026 , H01S5/0262 , H01S5/0264 , H01S5/06255 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/12 , H01S5/2077 , H01S5/227 , H01S5/2277 , H01S5/3203 , H01S5/34 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/4031 , H01S5/4087 , H01S5/50 , H01S5/5027 , H01S2304/04 , Y02E10/544
摘要： An optical functional device includes a semiconductor substrate(1), an optical functional layer provided on said semiconductor substrate and selected from the group consisting of a light emitting layer(42), a light absorbing layer(45), and an optical waveguide layer(41). The optical functional layer has a multi-quantum well layer(6). Preferably, the semiconductor substrate(1) is a nonplanar semiconductor substrate having a ridge(3) and two grooves(4) adjacent said ridge, said ridge having(3) a ridge width(dw) of from 1 to 10 µm, a ridge height(h) of from 1 µm to 5 µm, and a gap distance(dg) of from 1 µm to 10 µm. Such an optical functional device can be fabricated by growing, on a nonplanar semiconductor substrate(1) having a specified dimension of the ridge(3), a strained multi-quantum well layer(6) by metalorganic vapor phase epitaxy. Integrated optical device or circuit preferably includes an optical functional device on the nonplanar semiconductor substrate(1) of a specified range of ridge shape factors. An integrated optical device can be fabricated by combination of a plurality of optical functional devices having slightly different compositions and including a part of a strained multi-quantum well layer (6) monolithically grown on a nonplanar semiconductor substrate(6).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式