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81. 发明公开

EP1610426A1 OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：整合优化公司HALBLEITERSCHALTUNG的优化
公开(公告)号：EP1610426A1
公开(公告)日：2005-12-28
申请号：EP04724370.4
申请日：2004-03-30
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： NUNOYA, Nobuhiro, c/o NTT Int. Property Center , SHIBATA, Yasuo, c/o NTT Intellectual Property Ctr. , FUJIWARA, Naoki, c/o NTT Intellectual Property Ctr , KIKUCHI, Nobuhiro, c/o NTT Intellectual Prop. Ctr. , TOMORI, Yuichi, c/o NTT Intellectual Property Ctr.
IPC分类号： H01S5/12
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/4202 , H01S5/026 , H01S5/06206 , H01S5/06256 , H01S5/0654 , H01S5/068 , H01S5/101 , H01S5/1017 , H01S5/1025 , H01S5/1085 , H01S5/1215 , H01S5/1221 , H01S5/124 , H01S5/125 , H01S5/2205 , H01S5/227 , H01S2301/173
摘要： An optical semiconductor device and optical semiconductor integrated circuit are provided by combining, on a semiconductor substrate, materials having different refractive indices and different temperature dependence of the refractive indices. In particular, it becomes possible to control the temperature dependence of the oscillation wavelength with a propagating region having a material and/or structure whose temperature dependence of the refractive index is different from that of a gain region of the semiconductor laser. In addition, they can be configured to have a plurality of interfaces formed along the waveguide direction of the optical waveguide so that the light reflected off the first interface is weakened by the light reflected from the remaining interfaces. Also, they can be configured with the interfaces inclined to the propagating direction so that the waveguide loss due to the reflection and refraction between the optical waveguides whose refractive indices differ from each other can be reduced.
摘要翻译：通过在半导体衬底上组合具有不同折射率和折射率的不同温度依赖性的材料来提供光学半导体器件和光学半导体集成电路。具体地，可以通过具有与半导体激光器的增益区域的温度依赖性不同的材料和/或结构的传播区域来控制振荡波长的温度依赖性。此外，它们可以被配置为具有沿着光波导的波导方向形成的多个界面，使得从第一界面反射的光被从其余界面反射的光减弱。此外，它们可以被配置为具有相对于传播方向倾斜的接口，从而可以减少由于折射率彼此不同的光波导之间的反射和折射引起的波导损耗。

82. 发明授权

EP1458036B1 Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount 有权
标题翻译：载体的半导体激光二极管的制造方法的子载波，并且所述半导体激光二极管到载体
公开(公告)号：EP1458036B1
公开(公告)日：2005-11-23
申请号：EP03257874.2
申请日：2003-12-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Kwak, Joon-seop , Sung, Youn-joon , Chae, Su-Hee
IPC分类号： H01L33/00
CPC分类号： H01S5/0206 , H01L33/62 , H01L2924/0002 , H01S5/0207 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/2205 , H01L2924/00

83. 发明公开

EP1489707A2 Sampled grating distributed feedback wavelength tunable semiconductor laser integrated with sampled grating distributed bragg reflector 有权
标题翻译：可调半导体激光器的取样光栅与取样光栅的分布式布拉格反射器集成分布式反馈
公开(公告)号：EP1489707A2
公开(公告)日：2004-12-22
申请号：EP03030025.5
申请日：2003-12-30
申请人： Electronics and Telecommunications Research Institute
发明人： Oh, Su Hwan , Park, Moon Ho , Lee, Ji Myon , Kim, Ki Soo , Lee, Chul Wook , Ko, Hyun Sung , Park, Sahng Gi , Chung, Young Chul , Kim, Su Hyun
IPC分类号： H01S5/0625 , H01S5/12 , H01S5/125
CPC分类号： H01S5/06256 , H01S5/028 , H01S5/06258 , H01S5/1209 , H01S5/125 , H01S5/2205 , H01S5/227
摘要： The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index is varied in accordance with a c urrent applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, for such a wavelength tunable semiconductor laser, construction is relatively simple, and it is rel atively useful to the manufacturing and mass-production of the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.

84. 发明公开

EP1372229A1 Integrated semiconductor laser and waveguide device 有权
标题翻译： Integriertes Halbleiterlaser-Wellenleiter-Element
公开(公告)号：EP1372229A1
公开(公告)日：2003-12-17
申请号：EP02254072.8
申请日：2002-06-12
申请人： Agilent Technologies Inc., A Delaware Corporation
发明人： Berry, Graham Michael , Booij, Wilfred , Silver, Mark
IPC分类号： H01S5/026 , H01S5/22
CPC分类号： H01S5/026 , H01S5/0265 , H01S5/22 , H01S5/2205
摘要： The present invention relates to an integrated semiconductor laser and waveguide device, and in particular a buried heterojunction laser (3) that is optically coupled with a buried waveguide electro-absorption (EA) optical modulator (5). The device is fabricated on a common substrate (2) on which a number of semiconductor layers are deposited. The laser component (3) and the waveguide component (5) are coupled via an active layer (10). The laser component (3) includes a laser current conduction region (4) and adjacent said laser current conduction region a laser current confinement region (41). The waveguide component (5) includes a waveguide current conduction region (104) and adjacent said waveguide current conduction region a waveguide current confinement region (141). The laser current confinement region (41) comprises a first current blocking structure (28) formed from grown semiconductor layers (22,24). The waveguide current confinement region (141) comprises a second current blocking structure (40) formed from grown semiconductor layers (42,44) and includes also an extension (128) of the first current blocking structure (28), said extension (128) being interposed between the second current blocking structure (40) and the waveguide current conduction region (104). Because each of the components (3,5) is flanked by current confinement regions (41,141) of differing structures, the resistive and capacitative properties of each of the current confinement regions (41,141) can be selected to optimise the performance of that component (3,5) for a particular use.
摘要翻译：本发明涉及一种集成半导体激光器和波导器件，特别涉及一种与埋入波导电吸收（EA）光调制器（5）光学耦合的掩埋异质结激光器（3）。该器件制造在其上淀积多个半导体层的公共衬底（2）上。激光组件（3）和波导组件（5）经由有源层（10）耦合。激光器部件（3）包括激光电流传导区域（4），并且与激光电流限制区域（41）相邻。波导部件（5）包括波导电流传导区域（104），并且邻近所述波导电流传导区域波导管限制区域（141）。激光电流限制区域（41）包括由生长的半导体层（22,24）形成的第一电流阻挡结构（28）。波导电流限制区域（141）包括由生长的半导体层（42,44）形成的第二电流阻挡结构（40），并且还包括第一电流阻挡结构（28）的延伸部（128），所述延伸部（128）插入在第二电流阻挡结构（40）和波导电流传导区（104）之间。因为每个组分（3,5）的侧面是不同结构的电流限制区域（41,141），所以可以选择每个电流限制区域（41,141）的电阻和电容性质以优化该组分（3 ，5）用于特定用途。

85. 发明公开

EP1372228A1 Integrated semiconductor laser and waveguide device 有权
标题翻译：集成半导体激光器和波导装置
公开(公告)号：EP1372228A1
公开(公告)日：2003-12-17
申请号：EP02254069.4
申请日：2002-06-12
申请人： Agilent Technologies, Inc. - a Delaware corporation -
发明人： Booij, Wilfred , Silver, Mark , Berry, Graham Michael
IPC分类号： H01S5/026 , H01S5/22
CPC分类号： H01S5/026 , H01S5/0265 , H01S5/06226 , H01S5/22 , H01S5/2205
摘要： The present invention relates to an integrated semiconductor laser and waveguide device, and in particular a buried heterojunction laser (1) that is optically coupled with a ridge waveguide electro-absorption (EA) optical modulator (3) having a raised ridge structure (33). The device is formed on a single semiconductor substrate (2) on which a plurality of semiconductor layers are grown, including at least one active layer (10) through which optical radiation (25) is coupled from the laser (1) to the waveguide (3). Semiconductor layers (12,32) above the active layer (10) form a laser current conduction region (4), and semiconductor layers adjacent the active layer (10) from a laser current confinement region (24). The ridge structure (33) is formed from one or more layers (32) used also to form the laser current conduction region (4). The layers used to form the laser current confinement region (24) do not extend adjacent the ridge structure (33).
摘要翻译：本发明涉及集成半导体激光器和波导器件，特别是与具有凸脊结构（33）的脊形波导电吸收（EA）光调制器（3）光学耦合的埋入式异质结激光器（1）。该器件形成在其上生长多个半导体层的单个半导体衬底（2）上，该半导体衬底包括至少一个有源层（10），光辐射（25）通过该有源层从激光器（1）耦合到波导 3）。在有源层（10）上方的半导体层（12,32）形成激光电流传导区域（4），以及从激光电流限制区域（24）与有源层（10）相邻的半导体层。脊结构（33）由也用于形成激光电流传导区域（4）的一个或多个层（32）形成。用于形成激光电流限制区域（24）的层不邻近脊结构（33）延伸。

86. 发明公开

EP1284037A2 STREIFENLASERDIODENELEMENT 有权
标题翻译： STRIP二极管元件
公开(公告)号：EP1284037A2
公开(公告)日：2003-02-19
申请号：EP00990571.2
申请日：2000-12-22
申请人： Osram Opto Semiconductors GmbH
发明人： GRUBER, Stefan , HEERLEIN, Jörg , UNGER, Peter
IPC分类号： H01S5/223
CPC分类号： H01S5/227 , H01S5/0655 , H01S5/2063 , H01S5/2205 , H01S5/2215 , H01S5/2218 , H01S5/2219 , H01S5/2231
摘要： The invention concerns a stripe laser diode element exhibiting longitudinal direction of propagation in the main direction of propagation of a laser light and having contacts in longitudinal direction of propagation on one surface with the purpose of impressing a current on the element. The surface in defined by edges crosswise to the longitudinal direction. An absorption region is formed in the area of said edges.

87. 发明公开

EP1134858A1 Buried mesa semiconductor device 审中-公开
标题翻译： Halbleitervorrichtung mit vergrabener Mesa
公开(公告)号：EP1134858A1
公开(公告)日：2001-09-19
申请号：EP00301819.9
申请日：2000-03-06
申请人： Agilent Technologies Inc. a Delaware Corporation
发明人： Berry, Graham Michael , Amos, Sean David , Bhat, Jerome Chandra
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2205 , H01S5/2222 , H01S5/2227
摘要： The present invention relates to a buried mesa semiconductor device such as a laser diode with reduced leakage currents past the heterojunction, and to a method of forming such a device. The method comprises the steps of: growing a semiconductor wafer (1) with a plurality of layers including a substrate (2) and an active layer (6); depositing a mask (52) on the wafer (1) which defines one or more mesa regions (51) ; etching the wafer (1) to remove semiconductor layers to form a mesa structure (51) above the substrate (2), each mesa region (51) having mesa sides (53,54) extending upwards from the substrate (2) and between the mesa sides (53,54) a mesa top (63,64,65); growing one or more current confining semiconductor layers (56A,59A) to cover the mesa sides (53,54); removing part of the mask (52) along a part (64,65) of the top of the mesa adjacent the mesa sides (53,54); growing a leakage current confining semiconductor layer (68A) on a previous current confining layer (59A) so that the leakage current confining semiconductor layer (68A) extends to overlie partly (64,65) the mesa top adjacent said mesa sides (53,54); and removing the residual mask (62) and growing above the mesa top (63,64,65) one or more electrical contact semiconductor layers (75) by which a confined electrical current may be applied through the mesa (51) and substrate (2).
摘要翻译：本发明涉及一种埋入式半导体器件，例如具有减小的漏电流通过异质结的激光二极管，以及形成这种器件的方法。该方法包括以下步骤：生长具有包括衬底（2）和活性层（6）的多个层的半导体晶片（1）; 在限定一个或多个台面区域（51）的晶片（1）上沉积掩模（52）; 蚀刻晶片（1）以去除半导体层以在基板（2）上方形成台面结构（51），每个台面区域（51）具有从基板（2）向上延伸的台面侧（53,54）台面（53,54）台面（63,64,65）; 生长一个或多个电流限制半导体层（56A，59A）以覆盖台面侧面（53,54）; 沿着台面顶部邻近台面侧面（53,54）的部分（64,65）去除面罩（52）的一部分; 在先前的电流限制层（59A）上生长泄漏电流限制半导体层（68A），使得限制半导体层（68A）的泄漏电流延伸到邻近所述台面侧（53,54）的台面顶部（64,65））; 以及去除所述残留掩模（62）并在所述台面顶部（63,64,65）之上生长一个或多个电接触半导体层（75），通过所述电接触半导体层可以通过所述台面（51）和衬底（2）施加受限制的电流）。

88. 发明公开

EP1120872A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：EP1120872A1
公开(公告)日：2001-08-01
申请号：EP99943254.5
申请日：1999-09-09
申请人： Sharp Kabushiki Kaisha
发明人： TANEYA, Mototaka , TAKATANI, Kunihiro , OHMI, Susumu
IPC分类号： H01S5/22 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/2004 , H01S5/2086 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2218 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/3216 , H01S5/32325 , H01S5/32341 , H01S5/34333
摘要： An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer. A difference between a thermal expansion coefficient of the current-constricting layer and a thermal expansion coefficient of the second layer is in the range of -4 × 10 -9 /°C to +4 x 10 -9 /°C.
摘要翻译：一种InGaAlN基半导体激光器件，包括第一导电类型的第一层，具有比第一层的禁带更小的禁带的活性层以及具有比第一层的禁带更大的禁带的第二导电类型的第二层，活动层。第二层包括平坦区域和条形突出结构。在条形突出结构上形成折射率大于第二层的第二导电类型的条形光波导形成层。形成第一导电类型或高电阻的电流狭窄层，用于覆盖第二层的平坦区域的顶表面，第二层的凸起结构的侧表面以及光学元件的侧表面波导形成层。电流狭窄层的热膨胀系数与第二层的热膨胀系数之间的差值在-4×10 -9 /℃至+ 4×10 -9 /℃的范围内。

89. 发明公开

EP1087480A2 Semiconductor laser device and method of manufacturing the same 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：EP1087480A2
公开(公告)日：2001-03-28
申请号：EP00308345.8
申请日：2000-09-22
申请人： Sanyo Electric Co., Ltd.
发明人： Hiroyama, Ryouji, c/o Sanyo Electric Co., Ltd. , Nomura, Yasuhiko, c/o Sanyo Electric CO., Ltd. , Furusawa, Koutarou, c/o Sanyo Electric CO., Ltd. , Takeuchi, Kunio, c/o Sanyo Electric CO., Ltd. , Okamoto, Shigeyuki, c/o Sanyo Electric CO., Ltd.
IPC分类号： H01S5/223
CPC分类号： H01S5/2231 , H01S5/2205 , H01S5/221 , H01S5/222 , H01S5/2227 , H01S2301/18
摘要： A semiconductor laser device is characterized in that an angle θ of inclination formed by the side surfaces of a ridge portion and a lower part of the ridge portion is at least 70° and not more than 117°, a p-type cladding layer is made of Al X1 Ga 1-X1 As, a first current blocking layer is made of Al X2 Ga 1-X2 As, the distance between an emission layer and the first current blocking layer satisfies the relation of t ≦ 0.275/(1 - (X2 - X1)) assuming that t represents the distance, and a lower width W of the ridge portion is at least 2 µm and not more than 5 µm.
摘要翻译：半导体激光装置的特征在于，由脊部的侧面和脊部的下部形成的倾斜角度θ为70°以上且117°以下，制作p型包覆层的AlX1Ga1-X1As，第一电流阻挡层由AlX2Ga1-X2As制成，发射层和第一电流阻挡层之间的距离满足关系t≤0.275/（1-（X2-X1）），假设t代表距离和脊部的较低宽度W为至少2μm且不大于5μm。

90. 发明授权

EP0701310B1 Semiconductor laser device and method for fabricating the same 失效
标题翻译：一种半导体激光器件及其制造方法
公开(公告)号：EP0701310B1
公开(公告)日：1997-07-02
申请号：EP95306075.3
申请日：1995-08-31
申请人： SHARP KABUSHIKI KAISHA
发明人： Itoh, Shigetoshi , Okumura, Toshiyuki
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/2205 , H01S5/2231 , H01S5/327 , H01S5/347

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