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81. 发明授权

EP1438722B1 MEMOIRE MAGNETIQUE A SELECTION A L'ECRITURE PAR INHIBITION ET PROCEDE POUR SON ECRITURE 有权
标题翻译：具有写入锁定选择和写作过程中THEREOF磁记忆
公开(公告)号：EP1438722B1
公开(公告)日：2007-11-14
申请号：EP02785509.7
申请日：2002-09-19
申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
发明人： NOZIERES, Jean-Pierre , RANNO, Laurent , CONRAUX, Yann
IPC分类号： G11C11/16 , H01F10/32
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3204 , H01F10/3268
摘要： The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.

82. 发明公开

EP1788576A3 A reference cell scheme for MRAM 审中-公开
标题翻译：对于MRAM存储器参考单元方案
公开(公告)号：EP1788576A3
公开(公告)日：2007-10-31
申请号：EP06392014.4
申请日：2006-11-07
申请人： MagIC Technologies Inc. , Applied Spintronics, Inc.
发明人： Hsu Kai Yang , Po-Kang Wang , Xizeng Shi
IPC分类号： G11C11/15 , G11C11/16 , G11C7/14
CPC分类号： G11C7/14 , G11C11/16
摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

83. 发明授权

EP1627392B1 CIRCUIT CONFIGURATION FOR A CURRENT SWITCH OF A BIT/WORD LINE OF A MRAM DEVICE 有权
标题翻译：电路结构电源开关MRAM模块的BIT /字线
公开(公告)号：EP1627392B1
公开(公告)日：2007-10-03
申请号：EP04739374.9
申请日：2004-05-26
申请人： Qimonda AG , International Business Machines Corporation
发明人： DEBROSSE, John , VIEHMANN, Hans-Heinrich
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C7/12 , G11C8/08
摘要： A circuit configuration for a current switch of a bit line or a word line of a magnetoresistive random access memory (MRAM) device, comprising a directional switch and a voltage driver that, in operation, reduces the ON resistance of the directional switch. In one embodiment, each terminal of the line is provided with such a switch.

84. 发明公开

EP1633007A3 Magnetoresistance effect device and method of production of the same 有权转让
标题翻译：磁阻元件及其制造方法
公开(公告)号：EP1633007A3
公开(公告)日：2007-08-29
申请号：EP05077020.5
申请日：2005-09-05
申请人： ANELVA CORPORATION , National Institute of Advanced Industrial Science and Technology
发明人： Djayaprawira, David D , Tsunekawa, Koji , Nagai, Motonobu , Maehara, Hiroki , Yamagata, Shinji, c/o A207 Anelva Musashinodai-ryo , Watanabe, Naoki , Yuasa, Shinji
IPC分类号： H01L43/08 , H01L43/12 , H01F41/30
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.

85. 发明授权

EP1588372B1 MRAM ARCHITECTURE WITH A GROUNDED WRITE BIT LINE AND ELECTRICALLY ISOLATED READ BIT LINE 有权
标题翻译：与相关的写入和电大规模MRAM架构隔离的读出位线
公开(公告)号：EP1588372B1
公开(公告)日：2007-08-08
申请号：EP04702960.8
申请日：2004-01-16
申请人： Freescale Semiconductor, Inc.
发明人： NAHAS, Joseph, J.
IPC分类号： G11C11/00 , G11C11/16
CPC分类号： G11C11/16
摘要： Each memory cell (260, 262, 266, 268) of a magnetoresistive random access memory (MRAM) array (200) has a magnetoresistive tunnel junction (MTJ) and a transistor (261) coupled to the MTJ. Writing occurs by write lines (220, 232) along rows and columns of the array. One set of the write lines (232, 236) is connected to the end of the MTJs that is not connected to the transistors. These write lines are thereby close to the MTJs and thus have good magnetic coupling to the MTJs, which is important in keeping write current low. These write lines are driven on one end by drivers (240, 252). Sensing on the other hand occurs on a read bit line (222) that is coupled to the end of the transistor of the memory cell that is not coupled to the MTJ. By having the sense amplifier(s) (270) on a different line from the write drivers, sensing is not slowed by the capacitance of the write drivers (240, 252).

86. 发明授权

EP1484767B1 Magnetic memory apparatus and method of manufacturing magnetic memory apparatus 有权
标题翻译：一种磁存储器件及其制造的磁存储器件的方法
公开(公告)号：EP1484767B1
公开(公告)日：2007-08-01
申请号：EP04291394.7
申请日：2004-06-04
申请人： SONY CORPORATION
发明人： Tai, Kaori, Sony Corporation
IPC分类号： G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , H01L43/12

87. 发明公开

EP1804300A1 FUNCTION ELEMENT, STORAGE ELEMENT, MAGNETIC RECORDING ELEMENT, SOLAR CELL, PHOTOELECTRIC CONVERSION ELEMENT, LIGHT EMITTING ELEMENT, CATALYST REACTION DEVICE, AND CLEAN UNIT 审中-公开
标题翻译：功能件，存储器元件，磁性记录元件，太阳能电池，光电气元件，发光元件，催化反应装置和清洁单元
公开(公告)号：EP1804300A1
公开(公告)日：2007-07-04
申请号：EP05783692.6
申请日：2005-09-08
申请人： National University Corporation Hokkaido University
发明人： ISHIBASHI, Akira
IPC分类号： H01L31/045 , H01L51/10 , H01L21/8246 , H01L27/112 , G11C13/00
CPC分类号： G11C13/02 , G11C11/16 , G11C13/0009 , H01L21/67017 , Y02E10/549 , Y02P70/521
摘要： Memory device is made based upon a structure comprising a lamination of at least two thin pieces each having a periodically laminated configuration of conductive layers (preferably metals) each having a thickness in the range from 0.2 nm to 60 nm, and dielectric layers, each having a thickness larger than the thickness of each the conductive layer, such that the layers cross each other and edges of the conductive layers are opposed to each other. The thickness of said conductive layer is preferably in the range from 0.2 nm to 30 nm, and the thickness of said dielectric is typically in the range from 2 nm to 200/µm. The recording medium is insulator layer or nano-bridge structure.
摘要翻译：存储装置是基于包括至少两个薄片的叠层每个都具有导电层（最好是金属）的周期性叠层配置中的每个具有在所述范围内的厚度为0.2纳米至60纳米，和电介质层的结构制成，每个都具有的厚度比每一层中的导电的厚度大，检查没有所述层彼此交叉，并且导电层的边缘反对海誓山盟。所述导电层的厚度优选的范围为0.2至30nm，并且所述电介质的厚度是典型地在范围为2纳米至200 /微米。该记录介质是绝缘体层或纳米桥结构。

88. 发明公开

EP1796101A3 Magnetic memory 审中-公开
公开(公告)号：EP1796101A3
公开(公告)日：2007-07-04
申请号：EP06113049.8
申请日：2006-04-25
申请人： TDK Corporation
发明人： Haratani, Susumu
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08
摘要： A magnetic memory (1) having a wire (5) extended in a direction of arbitrary decision, an electro-resistivity effect element (4) disposed adjacently to the wire (5), and a counterelement side yoke (20B) disposed adjacently on the side opposite the magneto-resistivity effect element (4) in the wire (5) and having the thickness of the counterelement side yoke (20B) so set as to be larger than 50 nm and smaller than 150 nm. Owing to conformity with this invention, this magnetic memory is enabled to homogenize the magnetization property during the course of writing operation and perform the writing work with a low electric current.

89. 发明公开

EP1796101A2 Magnetic memory 审中-公开
标题翻译：磁记忆
公开(公告)号：EP1796101A2
公开(公告)日：2007-06-13
申请号：EP06113049.8
申请日：2006-04-25
申请人： TDK Corporation
发明人： Haratani, Susumu
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08
摘要： A magnetic memory (1) having a wire (5) extended in a direction of arbitrary decision, an electro-resistivity effect element (4) disposed adjacently to the wire (5), and a counterelement side yoke (20B) disposed adjacently on the side opposite the magneto-resistivity effect element (4) in the wire (5) and having the thickness of the counterelement side yoke (20B) so set as to be larger than 50 nm and smaller than 150 nm. Owing to conformity with this invention, this magnetic memory is enabled to homogenize the magnetization property during the course of writing operation and perform the writing work with a low electric current.
摘要翻译： 1，一种磁存储器，具有在任意决定的方向上延伸的导线（5），与电线（5）相邻地设置的电阻效应元件（4），以及相邻地设置在所述导线上的反元件侧轭（20B）（5）中的磁阻效应元件（4）的相反侧，并且反元件侧磁轭（20B）的厚度设定为大于50nm且小于150nm。由于符合本发明，该磁存储器能够在写操作过程中使磁化特性均匀化，并以低电流进行写操作。

90. 发明公开

EP1788576A2 A reference cell scheme for MRAM 审中-公开
标题翻译：参考文献MRAM Speicher
公开(公告)号：EP1788576A2
公开(公告)日：2007-05-23
申请号：EP06392014.4
申请日：2006-11-07
申请人： MagIC Technologies Inc. , Applied Spintronics, Inc.
发明人： Hsu Kai Yang , Po-Kang Wang , Xizeng Shi
IPC分类号： G11C11/15 , G11C11/16 , G11C7/14
CPC分类号： G11C7/14 , G11C11/16
摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.
摘要翻译： MRAM参考单元子阵列提供了一个中点参考电流来读取放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。位线与子阵列的每列相关联。一个耦合将一对列的位线连接在读出放大器的近旁的位置处。一对列中的第一列的MRAM单元被编程为第一磁阻状态，并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。当选择一行数据MRAM单元进行读取时，并行放置一对配对的MRAM参考单元，以产生用于感测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。讨论了一种验证MRAM参考子阵列编程的方法。

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