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    • 84. 发明公开
    • Process for producing a single crystal of KTiOPO4 or its analogues
    • 维尔法赫恩zum Herstellen eines Einkristalls aus KTiOPO4 oder dessen Analogen。
    • EP0004974A2
    • 1979-10-31
    • EP79101186.9
    • 1979-04-19
    • E.I. DU PONT DE NEMOURS AND COMPANY
    • Gier, Thurman Eugene
    • C03B9/12
    • C30B29/22C01B25/37C01B25/45C30B9/00C30B11/00C30B15/00
    • A process is provided for the manufacture of single crystals of MTiOXO 4 , wherein M is K, Rb or TI and X is P or As, of optical quality and of sufficient size for use in nonlinear optical devices. In the process, starting ingredients chosen to be within the region of the ternary phase diagram in which the desired crystal MTiOX0 4 product is the only stable solid phase, are heated to produce MTiOX0 4 and then controllably cooled to crystallize the desired product. In a preferred method the ingredients are placed in a temperature gradient in which the hot zone ranges from about 800-1000°C and the cold zone about 10-135°C cooler, maintaining the temperature gradient for about 3 days to about 3 weeks, cooling, and recovering MTiOX0 4 crystals.
    • 制造MTiOXO4的单晶的方法,其中M为K,Rb或Tl,X为P或As,具有光学质量且足够尺寸用于非线性光学器件。 在此过程中,加热选择在所需晶体MTiOXO4产物是唯一稳定固相的三元相图区域内的起始成分,以产生MTiOXO4,然后可控制地冷却以使所需产物结晶。 在优选的方法中,将成分置于温度梯度中,其中热区的范围为约800-1000℃,冷区约为10-13℃,较冷,将温度梯度保持约3天, 约3周,冷却并回收MTiOXO4晶体。