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71. 发明公开

EP1911501A2 A regeneration method of etching solution, an etching method and an etching system 有权
标题翻译： RegenerierungsverfahrenfürÄtzlösungen，ÄtzverfahrenundÄtzsystem
公开(公告)号：EP1911501A2
公开(公告)日：2008-04-16
申请号：EP07019492.3
申请日：2007-10-04
申请人： m. FSI Ltd.
发明人： Izuta, Nobuhiko , Watatsu, Haruru
IPC分类号： B01D29/52 , B01D29/56 , C09K13/04
CPC分类号： C09K13/04
摘要： The present invention provides a regeneration process of the etching solution for the silicon nitride film, applying phosphoric acid aqueous solution, wherein multiple numbers of filters are connected to the piping path of etching solution extracted from the etching tank by switching alternately in parallel or in series; in both cases that said multiple numbers of filters are connected in parallel or in series, said extracted etching solution being supplied to a filter with a filter element of a high silicon removal rate of silicon compounds with already deposited silicon compounds, thus maintaining a high silicon removal rate of silicon compounds.
摘要翻译：本发明提供了一种用于氮化硅膜的蚀刻溶液的再生处理，其中使用磷酸水溶液，其中多个滤光器连接到从蚀刻槽中提取的蚀刻溶液的管道中，并行或串联切换 ; 在所述多个滤波器并联或串联的两种情况下，所述提取的蚀刻溶液被提供给具有已经沉积的硅化合物的硅化合物的高硅去除速率的滤光元件的滤光器，从而保持高硅硅化合物的去除率。

72. 发明公开

EP1538664A4 ETCHANT AND ETCHING METHOD 审中-公开
标题翻译：蚀刻剂和刻蚀
公开(公告)号：EP1538664A4
公开(公告)日：2007-04-04
申请号：EP03795208
申请日：2003-08-04
申请人： DAIKIN IND LTD
发明人： ITANO MITSUSHI , KANEMURA TAKASHI , MOMOTA HIROSHI , WATANABE DAISUKE
IPC分类号： H01L21/311 , C09K13/04 , H01L21/308
CPC分类号： H01L21/31111
摘要： An etchant preferable to etch an object on which a film (a high-k film) having a relative dielectric constant of not less than 8 and a silicon oxide film are formed, wherein the etching rate of the high-k film is not less than 2 Å/min., and the ratio of the etching rate of a thermal oxide film (THOX) to that of the high-k film is not more than 50. A mixture of a hydrogen fluoride (HF) and various ether organic solvents is preferably used as the etchant.

73. 发明授权

EP1558697B1 FLUORINATED SURFACTANTS FOR BUFFERED ACID ETCH SOLUTIONS 失效
标题翻译： FLUOR含有表面活性剂为缓冲SÄUREÄTZLÖSUNGEN
公开(公告)号：EP1558697B1
公开(公告)日：2006-11-15
申请号：EP03754508.4
申请日：2003-09-11
申请人： 3M Innovative Properties Company
发明人： PARENT, Michael, J. , SAVU, Patricia, M. , FLYNN, Richard, M.
IPC分类号： C09K13/04 , H01L21/311 , C09K13/08
CPC分类号： H01L21/31111 , C09K13/08
摘要： The present invention is directed to certain fluorinated surfactants, and use thereof in acid etch solutions, such as in aqueous buffered acid etch solutions. The etch solutions are used with a wide variety of substrates, for example, in the etching of silicon oxide-containing substrates.

74. 发明公开

EP1572833A4 SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATION FOR ASHED AND UNASHED ALUMINUM POST-ETCH RESIDUE REMOVAL 失效
标题翻译： AUFÜBERKRITISCHEM二氧化碳基础的公式对铝的除去，IF灰化搁置之后通过蚀刻
公开(公告)号：EP1572833A4
公开(公告)日：2006-03-15
申请号：EP03779251
申请日：2003-10-27
申请人： ADVANCED TECH MATERIALS
发明人： KORZENSKI MICHAEL B , GHENCIU ELIODOR G , XU CHONGYING , BAUM THOMAS H
IPC分类号： C09K13/00 , C03C15/00 , C09K13/04 , C09K13/06 , C09K13/08 , C11D7/08 , C11D7/10 , C11D7/26 , C11D7/32 , C11D7/50 , C11D11/00 , H01L21/02 , H01L21/302 , H01L21/3213
CPC分类号： H01L21/02071 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/264 , C11D7/265 , C11D7/28 , C11D7/32 , C11D7/3245 , C11D7/50 , C11D7/5022 , C11D11/0047 , C23G5/00 , H01L21/02052 , H01L21/31133 , H01L21/32138
摘要： A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

75. 发明公开

EP1607435A1 Treatment of resin surfaces with aqueous Cerium solutions 审中-公开
标题翻译： Behindlung vonPolymeroberflächenmitwässrigenCeriumlösungen
公开(公告)号：EP1607435A1
公开(公告)日：2005-12-21
申请号：EP05012795.0
申请日：2005-06-14
申请人： MEC COMPANY LTD.
发明人： Nakamura, Sachiko , Miyata, Yoshinari , Ishida, Terukazu , Misumi, Miho
IPC分类号： C08J7/12 , C09K13/04
CPC分类号： C08J7/06 , C08J7/12 , H05K3/381
摘要： The present invention relates to a resin surface treating agent containing as an effective component at least one cerium compound selected from tetravalent and trivalent cerium compounds. The surface treating method of the present invention is a method of bringing a surface of a resin into contact with a surface treating agent containing as an effective component at least one cerium compound selected from tetravalent and trivalent cerium compounds, and thereafter treating the surface with an acidic aqueous solution. This activates the resin surface and thereby increases a strength of adhesion of, for instance, a polyimide-based resin film with metal wires, as well as a strength of adhesion of a polyimide-based resin film with another resin. Thus, a resin surface treating agent that provides excellent productivity and reduces processing costs, as well as a surface treating method using the same, are provided.
摘要翻译：本发明涉及含有至少一种选自四价和三价铈化合物的铈化合物作为有效成分的树脂表面处理剂。本发明的表面处理方法是使树脂的表面与含有选自四价和三价铈化合物的至少一种铈化合物作为有效成分的表面处理剂接触，然后用酸性水溶液。这激活树脂表面，从而增加例如具有金属线的聚酰亚胺系树脂膜的粘合强度，以及聚酰亚胺系树脂膜与其他树脂的密合强度。因此，提供了提供优异的生产率和降低加工成本的树脂表面处理剂，以及使用该树脂表面处理剂的表面处理方法。

76. 发明公开

EP1558698A1 FLUORINATED SURFACTANTS FOR AQUEOUS ACID ETCH SOLUTIONS 有权
标题翻译： FLUOR含有表面活性剂，用于水性SÄUREÄTZLÖSUNGEN
公开(公告)号：EP1558698A1
公开(公告)日：2005-08-03
申请号：EP03770349.3
申请日：2003-09-17
申请人： 3M Innovative Properties Company
发明人： PARENT, Michael J. , SAVU, Patricia M. , FLYNN, Richard M. , ZHANG, Zhongxing , LAMANNA, William M. , QIU, Zai-Ming , MOORE, George, G., I.
IPC分类号： C09K13/04 , H01L21/311 , C09K13/08
CPC分类号： C09K13/08 , H01L21/31111
摘要： Novel aqueous, acid etch solutions comprising a fluorinated surfactant are provided. The etch solutions are used with a wide variety of substrates, for example, in the etching of silicon oxide-containing substrates.

77. 发明公开

EP1470577A1 A CHEMISTRY FOR ETCHING QUATERNARY INTERFACE LAYERS ON INGAASP MOSTLY FORMED BETWEEN GAAS AND INXGA(1-X)P LAYERS 审中-公开
标题翻译：化学蚀刻季界面层上的GaAs主要镓（1-X）和p-InGaAsP LAYERS受过训练之间和的In x
公开(公告)号：EP1470577A1
公开(公告)日：2004-10-27
申请号：EP02790128.9
申请日：2002-12-13
申请人： MOTOROLA, INC.
发明人： SADAKA, Mariam, G. , ABROKWAH, Jonathan, K.
IPC分类号： H01L21/306 , C09K13/04
CPC分类号： H01L29/66318 , H01L21/30612
摘要： A method is provided for etching quaternary interface layers of InxGa1-xAsyP1-y which are formed between layers of GaAs and InGaP in heterojunction bipolar transistors (HBTs). In accordance with the method, the interface is exposed by etching the GaAs layer with an etchant that is selective to InGaP. The interface is then etched with a dilute aqueous solution of HCl and H2O2 that is selective to InGaP. The controlled etching provided by this methodology allows HBTs to be manufactured with more sophisticated, near ideal designs which may contain multiple GaAs/InGaP interfaces.

78. 发明公开

EP1124912A4 A CHEMICAL MECHANICAL POLISHING SLURRY SYSTEM HAVING AN ACTIVATOR SOLUTION 有权
标题翻译：化学机械抛光浆料END，加速器溶液，其中含有
公开(公告)号：EP1124912A4
公开(公告)日：2004-09-01
申请号：EP99955147
申请日：1999-10-22
申请人： ARCH SPEC CHEM INC
发明人： MAHULIKAR DEEPAK
IPC分类号： B24B37/00 , A01N33/06 , A01N43/40 , A01N59/08 , C09G1/02 , C09K3/14 , C09K13/02 , C09K13/04 , C09K13/06 , C09K13/08 , H01L21/304 , H01L21/306 , B24B1/00
CPC分类号： C09K3/1463 , C09G1/02
摘要： This invention relates to a CMP slurry system for use in semiconductor manufacturing. The slurry system comprises two parts. The first part is a generic dispersion that only contains an abrasive and, optionally, a surfactant and a stabilizing agent. The generic dispersion can be used for polishing metals as well as interlayer dielectrics (ILD). The second part is a novel activator solution comprising at least two components selected from the group consisting of: an oxidizer, acids, amines, chelating agents, fluorine-containing compounds, corrosion inhibitors, buffering agents, surfactants, biological agents and mixtures thereof.

79. 发明公开

EP1446460A1 AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：含铜水基清洗剂和专用缓蚀阻垢剂清洁无机残余物半导体衬底
公开(公告)号：EP1446460A1
公开(公告)日：2004-08-18
申请号：EP02802158.2
申请日：2002-10-17
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： WOJTCZAK, William, A. , SEIJO, Fatima, Ma. , BERNHARD, David , NGUYEN, Long
IPC分类号： C09K13/00 , C09K13/02 , C09K13/04 , C09K13/06 , C09K13/08 , H01L21/302
CPC分类号： C11D3/30 , C09K13/00 , C09K13/08 , C11D3/32 , C11D3/33 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , C23F11/142 , C23F11/146 , C23G1/103 , C23G1/106 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/02074 , H01L21/32136
摘要： A semiconductor wafer cleaning formulation, including l-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40%wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50%wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

80. 发明公开

EP1386351A1 METHOD OF WET ETCHING A SILICON AND NITROGEN CONTAINING MATERIAL 审中-公开
标题翻译：法湿法蚀刻含硅与氮材料
公开(公告)号：EP1386351A1
公开(公告)日：2004-02-04
申请号：EP02724539.8
申请日：2002-04-18
申请人： Koninklijke Philips Electronics N.V.
发明人： KNOTTER, Dirk, M. , VAN WINGERDEN, Johannes , ROVERS, Madelon, G., J.
IPC分类号： H01L21/311 , C09K13/04 , H01L21/027 , G03F7/09
CPC分类号： C09K13/08 , H01L21/0276 , H01L21/31111 , H01L21/67075 , H01L21/67086
摘要： The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.

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