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71. 发明公开

EP0715780A1 BRIDGE RECTIFIER CIRCUIT HAVING ACTIVE SWITCHES AND AN ACTIVE CONTROL CIRCUIT 失效
标题翻译：与有源开关整流桥电路和启动控制电路
公开(公告)号：EP0715780A1
公开(公告)日：1996-06-12
申请号：EP95919594.0
申请日：1995-06-12
申请人： PHILIPS ELECTRONICS N.V.
发明人： WONG, Stephen
IPC分类号： H02M7
CPC分类号： H02M7/219 , H02M2007/2195 , Y02B70/1408
摘要： A bridge rectifier circuit uses active switches for at least two of its four rectifying elements, and employs an active control circuit to control the state of the active switches. The active control circuit receives its input from the AC input to the bridge rectifier circuit, is powered by the DC output of the bridge rectifier circuit, and provides control outputs to the active switches. In this manner, a bridge rectifier circuit having improved performance and decreased power dissipation is achieved.

72. 发明公开

EP0544047A1 High current MOS transistor integrated bridge structure optimising conduction power losses 失效
标题翻译： Hochstrom-MOS晶体管enthaltende integrierteBrückenstrukturmit optimiertenÜbertragungsleistungsverlusten。
公开(公告)号：EP0544047A1
公开(公告)日：1993-06-02
申请号：EP91830512.9
申请日：1991-11-25
申请人： SGS-THOMSON MICROELECTRONICS S.r.l. , CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
发明人： Paparo, Mario , Aiello, Natale
IPC分类号： H01L27/088 , H01L21/76
CPC分类号： H02M7/219 , H01L21/761 , H01L27/088 , H02M2007/2195 , Y02B70/1408
摘要： The structure comprises at least arms (1, 2) each formed from a first and a second MOS transistor (M3, M1; M4, M2). Its integrated monolithic construction provides for a type N++ substrate (3) forming a positive potential output terminal (K1) which is overlaid by a type N-epitaxial layer (4). For each of the first transistors (M3; M4) this comprises a type P, P+ insulating region (13, 25; 14, 26) containing a type N+ enriched drain region (15; 16), a type N drain region (19; 20) and, in succession, a type P body region (21; 22) and a pair of type N+ source regions (23; 24) forming a negative potential output terminal (A1) respectively. For each of the second transistors (M1, M2) the structure comprises a type N+ enriched drain region (5, 6) containing a type N drain region (31, 32) and in succession a type P body region (9; 10) and a pair of type N+ regions (11; 12) forming corresponding alternating current inputs (A3, A4) respectively.
摘要翻译：该结构至少包括由第一和第二MOS晶体管（M3，M1; M4，M2）形成的臂（1,2）。其集成的单片结构提供了形成由N型外延层（4）覆盖的正电位输出端子（K1）的N + +衬底（3）。对于第一晶体管（M3; M4）中的每一个，其包括包含富含N +型漏极区（15; 16）的类型P，P +绝缘区（13,25; 14,26），N型漏极区（19; 20），并且分别连接形成负电位输出端子（A1）的P型体区域（21; 22）和一对N +源极区域（23; 24）。对于每个第二晶体管（M1，M2），该结构包括含有N型漏极区域（31,32）的N + +型漏极区域（5,6），并且连续地包含P型体区域（9; 10）和分别形成相应的交流电输入（A3，A4）的一对N +型区域（11; 12）。

73. 发明授权

EP0302176B1 Magnetic recording and reproducing apparatus 失效
标题翻译：磁记录和再现设备
公开(公告)号：EP0302176B1
公开(公告)日：1992-03-18
申请号：EP88105108.0
申请日：1988-03-29
申请人： SHARP KABUSHIKI KAISHA
发明人： Ohashi, Keiichi , Umehara, Hiroshi , Nagahashi, Hajime
IPC分类号： G11B15/675 , G11B15/665
CPC分类号： G11B15/6653 , G11B15/67544 , G11B15/67565 , G11B25/066 , H02M2007/2195 , Y02B70/1408

74. 发明公开

EP0112119A3 Bridge rectifier circuit 失效
标题翻译：桥式整流器电路
公开(公告)号：EP0112119A3
公开(公告)日：1985-05-15
申请号：EP83307427
申请日：1983-12-06
申请人： SILICONIX LIMITED
发明人： Jenkins, James Oliver Michael , Gardner, Nigel Carrington
IPC分类号： H02M07/217
CPC分类号： H02M7/219 , H02M2007/2195 , Y02B70/1408
摘要： A bridge rectifier circuit comprises a bridge of switching transistors 1 to 4 having their control terminals connected to switch the transistors to provide either full wave rectification of an a.c. input voltage or polarity correction of a d.c. input voltage of either polarity appearing at terminals A and B. The switching transistors are all of the same polarity type and at least two floating drivers 6 and 7 are connectd to generate and supply control potentials to the control terminals respectively of a pair of the switching transistors. In a preferred embodiment the switching transistors comprise field effect transistors. The floating drivers can comprise at least one respective bridge rectifier 12 capacitively linked to a source of vol ie pulses 10 when the input voltage has a predetermined poiarity, to generate the control potentials. Alternatively the floating drivers can comprise a voltage doubler or quadrupler capacitively linked to the source of voltage pulses. Such bridge rectifier circuits can be employed in a telephone instrument.

75. 发明公开

EP0112119A2 Bridge rectifier circuit 失效
标题翻译：整流电桥电路。
公开(公告)号：EP0112119A2
公开(公告)日：1984-06-27
申请号：EP83307427.1
申请日：1983-12-06
申请人： SILICONIX LIMITED
发明人： Jenkins, James Oliver Michael , Gardner, Nigel Carrington
IPC分类号： H02M7/217
CPC分类号： H02M7/219 , H02M2007/2195 , Y02B70/1408
摘要： A bridge rectifier circuit comprises a bridge of switching transistors 1 to 4 having their control terminals connected to switch the transistors to provide either full wave rectification of an a.c. input voltage or polarity correction of a d.c. input voltage of either polarity appearing at terminals A and B. The switching transistors are all of the same polarity type and at least two floating drivers 6 and 7 are connectd to generate and supply control potentials to the control terminals respectively of a pair of the switching transistors.
In a preferred embodiment the switching transistors comprise field effect transistors. The floating drivers can comprise at least one respective bridge rectifier 12 capacitively linked to a source of vol ie pulses 10 when the input voltage has a predetermined poiarity, to generate the control potentials. Alternatively the floating drivers can comprise a voltage doubler or quadrupler capacitively linked to the source of voltage pulses. Such bridge rectifier circuits can be employed in a telephone instrument.

76. 发明公开

EP3095199A4 WIRELESS POWER RECEIVER WITH PROGRAMMABLE POWER PATH 有权
公开(公告)号：EP3095199A4
公开(公告)日：2018-03-14
申请号：EP15725222
申请日：2015-01-08
申请人： MEDIATEK SINGAPORE PTE LTD
发明人： YEN YUNG CHIH , RIEHL PATRICK STANLEY , HASNAIN AKRAM , SATYAMOORTHY ANAND
IPC分类号： H04B5/00 , G05F1/56 , H01F38/14 , H02J5/00 , H02J7/00 , H02J7/02 , H02J50/12 , H02M1/00 , H02M3/07 , H02M3/156 , H04B5/02
CPC分类号： H02J50/12 , G05F1/56 , G05F1/575 , H01F38/14 , H02J5/005 , H02J7/025 , H02M3/07 , H02M3/156 , H02M7/217 , H02M2001/0045 , H02M2007/2195 , H04B5/0037 , Y02B70/1408 , Y02B70/1425 , Y02B70/1441
摘要： A wireless power receiver IC in which the power path can be reconfigured as either a low-dropout regulator (LDO), a switched-mode power supply (SMPS) or a power switch (PSW) is provided. All three modes share the same pass device to reduce die area and share the same output terminal to reduce pin. In an inductive wireless receiver, the power path can be reprogrammed on the fly to LDO or PSW mode or can be reprogrammed on the fly to SMPS or PSW mode. In a resonant or multi-mode wireless receiver, the power path can be reprogrammed on the fly to SMPS or PSW mode. Furthermore, to achieve high power transfer efficiency performance, using N-channel MOSFET as its pass device has better efficiency and smaller die area than P-channel MOSFET pass device.

77. 发明公开

EP2237402A4 POWER TRANSFORMER 审中-实审转让
公开(公告)号：EP2237402A4
公开(公告)日：2018-01-17
申请号：EP09706267
申请日：2009-01-21
申请人： DAIKIN IND LTD
发明人： MAEDA TOSHIYUKI , SEKIMOTO MORIMITSU , HIBINO HIROSHI
IPC分类号： H02M7/5387 , H02M1/00 , H02M5/297 , H02M7/21 , H02M7/219 , H02M7/797 , H03K17/0814
CPC分类号： H02M7/797 , H02M7/5387 , H02M2001/0051 , H02M2007/2195 , H03K17/08142 , Y02B70/1408 , Y02B70/1483 , Y02B70/1491
摘要： An inverter circuit (120) is configured so as to perform synchronous rectification by six switching elements (130). The switching element (130) is formed of an unipolar device (SiC MOSFET in this case) using a wideband gap semiconductor. The inverter circuit (120) uses the body diode (131) of SiC MOSFET (130) as a freewheeling diode during synchronous rectification.

78. 发明公开

EP2461475A4 POWER CONVERSION DEVICE 无效转让
公开(公告)号：EP2461475A4
公开(公告)日：2017-10-18
申请号：EP10804120
申请日：2010-07-28
申请人： DAIKIN IND LTD
发明人： SEKIMOTO MORIMITSU
IPC分类号： H02M7/48 , H02M7/5387
CPC分类号： H02M1/38 , H02M2001/385 , H02M2007/2195 , Y02B70/1408

79. 发明授权

EP3022836B1 ÜBERSPANNUNGSSCHUTZ FÜR AKTIVE GLEICHRICHTER BEI LASTABWURF 有权
标题翻译： ÜBERSPANNUNGSSCHUTZFÜRAKTIVE GLEICHRICHTER BEI LASTABWURF
公开(公告)号：EP3022836B1
公开(公告)日：2017-06-07
申请号：EP14732204.4
申请日：2014-06-24
申请人： Robert Bosch GmbH
发明人： OTTE, Christopher , MEHRINGER, Paul
IPC分类号： H02M1/32 , H02M7/219 , H02H7/125
CPC分类号： B60L11/02 , H02H7/1252 , H02M1/32 , H02M7/04 , H02M7/219 , Y02B70/1408

80. 发明公开

EP2645559A3 Halbleiternetzteil 审中-公开
标题翻译：安森美半导体电源
公开(公告)号：EP2645559A3
公开(公告)日：2017-05-10
申请号：EP12000376.9
申请日：2012-01-20
申请人： Aizo AG , Aizo Group AG
发明人： Bröckmann, Eckard , Deckers, Volker , Hofmann, Ralf , Kemmler, Wolfgang
IPC分类号： H02M7/217 , H02M7/12 , H02M7/219
CPC分类号： H02M7/217 , H02M7/125 , H02M7/2176 , H02M2007/2195 , Y02B70/1408
摘要： Die Erfindung betrifft eine Elektronische Schaltung zur Versorgung von weiteren elektronischen Schaltungen welche zwischen Eingangsseite und Ausgangsseite eine Schaltung umfasst unter einem Zusammenwirken, von einer Ladekapazität (CLoad) mindestens einem Transistor (TLoad), eine Stromquelle (CM), einer Steuerungsschaltung (201, 202, 203), Vorwiderständen, Dioden, wobei zur Vermeidung mechanischer Bauelemente zwischen dem in Basisschaltung betriebenen Transistor (TLoad) und der Eingangsspannung eine Diode D 1 angeordnet ist und wobei die Sourceseite des Transistors (TLoad) mit der Stromquelle CM verbunden ist und die Stromquelle mit der Ladekapazität CLoad verbunden ist, und wobei an der Ladekapazität (CLoad) eine geregelte Spannung bereitgestellt wird und wobei die Steuerschaltung die Stromquelle CM mit Regelinformationen versorgt und wobei diese Stromquelle CM, wenn die geregelte Spannung an der Ladekapazität CLoad einen oberen Schwellwert überschreitet, diese Ladekapazität CLoad zusammen mit dem Transistor (TLoad) mit Hilfe der Steuerschaltung ST1 abregelt, und wenn diese geregelte Spannung an der Ladekapazität CLoad eine untere Schwelle unterschreitet, die Ladekapazität CLoad auflädt.
摘要翻译：本发明涉及一种用于设置在电路的输入侧和输出侧之间的进一步的电子电路的供电的电子电路包括至少一个共同的操作，负载能力（CLOAD）的一个晶体管（t加载），电流源（CM），控制电路（201，202， 203）中，串联电阻器，二极管，（为避免输入电压从动基部晶体管t加载之间的机械部件）和一个二极管d 1，并且其中所述晶体管（t加载的源极侧）被连接到电流源CM，并与电源装载容量CLOAD连接，并且其中，在所述充电容量（CLOAD），经调节的电压提供，并且其中所述控制电路中，电流源CM的控制信息供给所述电流源当在负载电容C负载调节电压超过CM上阈值时，该充电容量CLO 广告进入动作一起由控制电路ST1手段的晶体管（t加载），并且如果在充电电容器CLOAD此调节后的电压下降到低于下阈值时，充电容量充电CLOAD。

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