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71. 发明公开

EP0756330A2 Power semiconductor device with insulated trench gate and manufacturing method thereof 失效
标题翻译：相同的功率半导体装置具有绝缘沟槽栅极和用于制备
公开(公告)号：EP0756330A2
公开(公告)日：1997-01-29
申请号：EP96109389.5
申请日：1996-06-12
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Takahashi, Tetsuo , Nakamura, Katsumi , Minato, Tadaharu , Harada, Masana
IPC分类号： H01L29/739 , H01L29/745 , H01L29/749 , H01L21/332 , H01L21/331
CPC分类号： H01L29/66348 , H01L29/0692 , H01L29/0696 , H01L29/66356 , H01L29/66378 , H01L29/7391 , H01L29/7397 , H01L29/7455 , H01L29/749 , H01L29/868 , H01L2924/0002 , H01L2924/00
摘要： A pin diode is formed by a p + collector region (1), an n type buffer region (3), an n - region (5) and an n + cathode region (7). A trench (9) is formed from the surface of n + cathode region (7) through n + cathode region (7) to reach n - region (5). An insulating film (11) is formed along an inner wall surface of trench (9). A gate electrode layer (13) is formed to oppose to the sidewall of n + cathode region (7) with insulating film (11) interposed. A cathode electrode (17) is formed to be electrically connected to n + cathode region (7). An anode electrode (19) is formed to be electrically connected to p + collector region (1). The n + cathode region (7) is formed entirely over the surface between trenches (9) extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.
摘要翻译： PIN二极管由P上形成<+>集电区的n型缓冲区域（1）（3）至n < - >区域（5）和n <+>阴极区（7）。沟槽（9）由n的表面<+>阴极区（7）至n FORMED <+>阴极区（7），以达到Ñ< - >区域（5）。绝缘电影（11）沿着在沟槽（9）的内壁面形成。栅电极层（13）被形成为与n个<+>阴极区（7）的侧壁有绝缘电影（11）插入。阴极电极（17）被形成为电连接到n <+>阴极区（7）。阳极电极（19）被形成为电连接至p <+>集电极区域（1）。在n <+>阴极区（7）完全在（9）平行地延伸海誓山盟沟槽之间的表面上形成。因此，在其中栅极控制电路的功率半导体装置被简化并且其具有良好的性能上能够得到。

72. 发明授权

EP0559945B1 Abschaltbares Leistungshalbleiter-Bauelement 失效
标题翻译：关断功率半导体元件
公开(公告)号：EP0559945B1
公开(公告)日：1996-10-16
申请号：EP92104375.8
申请日：1992-03-13
申请人： ASEA BROWN BOVERI AG
发明人： Bauer, Friedhelm, Dr.
IPC分类号： H01L29/74
CPC分类号： H01L29/42308 , H01L29/742 , H01L29/7455 , H01L29/749

73. 发明公开

EP0736909A2 Insulated gate thyristor 失效
标题翻译：晶闸管分离器门
公开(公告)号：EP0736909A2
公开(公告)日：1996-10-09
申请号：EP96105104.2
申请日：1996-03-29
申请人： FUJI ELECTRIC CO. LTD.
发明人： Iwamuro, Noriyuki, Fuji Electric Co.,Ltd. , Harada, Yuichi, Fuji Electric Co.,Ltd. , Iwaana, Tadayoshi, Fuji Electric Co.,Ltd.
IPC分类号： H01L29/745 , H01L29/749
CPC分类号： H01L29/7455 , H01L29/0692 , H01L29/102 , H01L29/32 , H01L29/749
摘要： An insulated gate thyristor is provided which includes a first-conductivity-type base layer (3) of high resistivity, first and second second-conductivity-type base regions (4, 6) formed in a surface layer of a first major surface of the first-conductivity-type base layer, a first-conductivity-type source region (7) formed in a surface layer of the first second-conductivity-type base region (4), a first-conductivity-type emitter region (8) formed in a surface layer of the second second-conductivity-type base region (6), a gate electrode (10) formed on surfaces of the first second-conductivity-type base region, the first-conductivity-type base layer, and the second second-conductivity-type base region, which surfaces are interposed between the first-conductivity-type source region and the first-conductivity-type emitter region, an insulating film (14) interposed between the gate electrode and these surfaces of the base regions and layer, a first main electrode (11) in contact with both the first second-conductivity-type base region and the first-conductivity-type source region, a second-conductivity-type emitter layer (1) formed on a second major surface of the first-conductivity-type base layer, and a second main electrode (12) in contact with the second-conductivity-type emitter layer. The entire surface areas of the second second-conductivity-type base region and the first-conductivity-type emitter region are covered with the insulating film.
摘要翻译：提供了一种绝缘栅极晶闸管，其包括形成在第一主表面的表层中的高电阻率的第一和第二第二导电型基极区域（4,6）的第一导电型基极层（3）第一导电型基极层，形成在第一第二导电型基极区域（4）的表面层中的第一导电型源极区域（7），形成有第一导电型发射极区域（8）在所述第二第二导电型基极区域（6）的表面层中，形成在所述第一第二导电型基极区域，所述第一导电型基极层和所述第二导电型基极区域的表面上的栅电极（10）第二导电型基极区域，其表面插入在第一导电型源极区域和第一导电型发射极区域之间，绝缘膜（14），介于栅极电极与基极区域的这些表面之间;以及层，与两个t接触的第一主电极（11）第一导电型基极区域和第一导电型源极区域，形成在第一导电型基极层的第二主表面上的第二导电型发射极层（1）和第二导电型基极区域电极（12）与第二导电型发射极层接触。第二第二导电型基极区域和第一导电型发射极区域的整个表面积被绝缘膜覆盖。

74. 发明公开

EP0675545A3 Insulated gate thyristor 失效
标题翻译：晶闸管分离器门。
公开(公告)号：EP0675545A3
公开(公告)日：1996-07-10
申请号：EP95104741.4
申请日：1995-03-30
申请人： FUJI ELECTRIC CO. LTD.
发明人： Iwamuro, Noriyuki
IPC分类号： H01L29/745
CPC分类号： H01L29/749 , H01L29/7408 , H01L29/7455
摘要： To provide an emitter switched thyristor (EST) which improves the turn-off withstand capability without deteriorating its on-voltage, according to the present invention, a potential drop is obtained through a resistor (13) disposed between the main electrode (11) and the base region (6). This facilitates uniformly recovering the reverse-blocking ability of the PN junction, in contrast to the ESTs of the prior art which obtain the potential drop by the current in Z-direction for latching up the thyristor from the IGBT mode. The present EST may be formed also in a horizontal device or a trench structure.
摘要翻译：为了提供根据本发明的提高关断耐受能力而不劣化其导通电压的发射极开关晶闸管（EST），通过设置在主电极（11）和基部区域（6）。这有助于均匀地恢复PN结的反向阻挡能力，与现有技术的EST相比，其通过Z方向的电流获得了从IGBT模式锁存晶闸管的电位降。本EST也可以在水平装置或沟槽结构中形成。

75. 发明授权

EP0477594B1 Abschaltbarer Thyristor 失效
标题翻译：断晶闸管
公开(公告)号：EP0477594B1
公开(公告)日：1996-01-17
申请号：EP91114768.4
申请日：1991-09-02
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Oppermann, Klaus-Günter , Gerstenmaier, York, Dr. , Stoisiek, Michael, Dr.
IPC分类号： H01L29/74
CPC分类号： H01L29/7455 , H01L29/0649 , H01L29/102 , H01L29/32

76. 发明授权

EP0507974B1 Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement 有权
标题翻译：关断，MOS控制的功率半导体元件
公开(公告)号：EP0507974B1
公开(公告)日：1995-12-20
申请号：EP91105724.8
申请日：1991-04-11
申请人： ASEA BROWN BOVERI AG
发明人： Bauer, Friedhelm, Dr. , Vuilleumier, Raymond, Dr.
IPC分类号： H01L29/74
CPC分类号： H01L29/7455

77. 发明授权

EP0480356B1 MOS-controlled thyristor and method of making the same 失效
标题翻译： MOS控制晶闸管，以及其制备方法。
公开(公告)号：EP0480356B1
公开(公告)日：1995-03-08
申请号：EP91117060.3
申请日：1991-10-07
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Hagino, Hiroyasu, c/o Mitsubishi Denki K. K.
IPC分类号： H01L29/74
CPC分类号： H01L29/66348 , H01L29/7397 , H01L29/7455 , Y10S148/126

78. 发明公开

EP0638205A1 MOS GATED THYRISTOR WITH REMOTE TURN-OFF ELECTRODE 失效
标题翻译：同时除去ARRANGED SHUTDOWN LEAD MOS栅极晶闸管。
公开(公告)号：EP0638205A1
公开(公告)日：1995-02-15
申请号：EP93910725.0
申请日：1993-04-21
申请人： NORTH CAROLINA STATE UNIVERSITY
发明人： SHEKAR, Mallikarjunaswamy, S. , BALIGA, Bantval, Jayant
IPC分类号： H01L29
CPC分类号： H01L29/7455
摘要： An emitter-switched thyristor structure (100) includes a remote turn-off electrode (202) for reducing turn-off time and increasing maximum controllable operating current. The switched thyristor structure further includes anode (190) and cathode (196) electrodes, with the remote electrode being connected to the cathode electrode. A multi-layer body of semiconductor material (110) has a first surface (140), as well as regenerative (114) and non-regenerative (166) portions each operatively coupled between the anode and cathode electrodes. The regenerative portion includes adjacent first (116), second (120), third (130, 150) and fourth (158) regions of alternating conductivity type arranged respectively in series. Electrical contacts exist between the remote electrode and the second region, as well as between the anode electrode and the fourth region. The thyristor is turned on by applying an enabling voltage to an insulated gate electrode (208, 216) disposed adjacent the first surface such that a conductive channel is created in the regenerative portion via modulation of the conductivity therein.

79. 发明公开

EP0633611A1 Insulated gate bipolar transistor 失效
标题翻译：双极晶体管隔离门。
公开(公告)号：EP0633611A1
公开(公告)日：1995-01-11
申请号：EP94201890.4
申请日：1994-06-30
申请人： PHILIPS ELECTRONICS UK LIMITED , PHILIPS ELECTRONICS N.V.
发明人： Amaratunga, Gehan Anil, c/o Univ. of Cambridge , Udrea, Florin, c/o University of Cambridge
IPC分类号： H01L29/72 , H01L29/74
CPC分类号： H01L29/7455 , H01L29/1095 , H01L29/7395 , H01L29/7397
摘要： The insulated gate field effect device (Ia,Ib,Ic,Id) has a semiconductor body (2) with a first region (3) of one conductivity type, a second region (4) of the opposite conductivity type, a third region (6) of the one conductivity type (7) separated from the first region (3) by the second region (4) and at least one injector region (3) for injecting charge carriers of the opposite conductivity type into the first region (3). The conduction channel area (40) adjoining the insulated gate (9,10) has first and second subsidiary areas (40 and 40b) for providing respective first and second subsidiary conduction channels. The second subsidiary area (40b) is spaced from the third region (6) and is more lowly doped than the first subsidiary conduction channel area (40a) for causing, when the injected opposite conductivity current type reaches a given value, the pn junction (40b') between the second subsidiary channel (40b) and the second region (4) to become forward-biassed causing the bipolar transistor formed by the second subsidiary channel (40b), the second region (4) and the first region (3) to conduct to initiate with the at least one injector region (8) thyristor action which ceases upon removal of the conduction channel.
摘要翻译：绝缘栅场效应器件（Ia，Ib，Ic，Id）具有半导体本体（2），其具有一个导电类型的第一区域（3），具有相反导电类型的第二区域（4），第三区域通过第二区域（4）从第一区域（3）分离的一个导电类型（7）的至少一个导电类型（7）的至少一个注入区域（3）和用于将相反导电类型的电荷载流子注入到第一区域（3）中的至少一个注入区域。与绝缘栅极（9,10）相邻的导电沟道区域（40）具有用于提供相应的第一和第二辅助导电沟道的第一和第二辅助区域（40和40b）。第二辅助区域（40b）与第三区域（6）间隔开，并且比第一辅助导电通道区域（40a）更低掺杂，用于当注入的相反电导率电流类型达到给定值时，引起pn结（ 40b）和第二区域（4）之间，以使第二辅助通道（40b），第二区域（4）和第一区域（3）形成的双极晶体管变为正向偏压，以便开始与去除导电通道时停止的至少一个注入器区域（8）晶闸管动作。

80. 发明公开

EP0622854A1 Semiconductor switch with IGBT and thyristor 失效
标题翻译： Halbleiterschalter mit IGBT和晶闸管。
公开(公告)号：EP0622854A1
公开(公告)日：1994-11-02
申请号：EP94302926.4
申请日：1994-04-25
申请人： HITACHI, LTD.
发明人： Kobayashi, Hideo
IPC分类号： H01L29/74 , H01L29/72
CPC分类号： H01L29/7395 , H01L29/7455 , H01L29/749
摘要： In a complex semiconductor device, an IGBT and a thyristor are formed in an identical semiconductor substrate (1) to be connected in parallel with each other between main electrodes (2, 3) such that an end of the thyristor on the cathode side is connected to the main electrode via an insulated gate electrode (4) of the IGBT. Thanks to the complex of the IGBT and the thyristor, there is attained a semiconductor device having a satisfactory ignition characteristic, a low on-state voltage, and a high breakdown voltage.
摘要翻译：在复合半导体器件中，IGBT和晶闸管形成在相同的半导体衬底（1）中，以在主电极（2,3）之间彼此并联连接，使得阴极侧的晶闸管的一端连接通过IGBT的绝缘栅电极（4）连接到主电极。由于IGBT和晶闸管的复杂性，获得了具有令人满意的点火特性，低导通电压和高击穿电压的半导体器件。

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