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61. 发明公开

EP1926125A1 Endpoint detection for photomask etching 有权
标题翻译： Endpunkterkennungfürdie Atzung von Photomasken
公开(公告)号：EP1926125A1
公开(公告)日：2008-05-28
申请号：EP07021045.5
申请日：2007-10-26
申请人： APPLIED MATERIALS, INC.
发明人： Grimbergen, Michael
IPC分类号： H01L21/00 , H01L21/687
CPC分类号： H01L21/67253 , G03F1/80 , H01L21/67063 , H01L21/67069 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber (10; 900;2500) with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.
摘要翻译：提供用于光掩模蚀刻的终点检测的装置和方法。该装置提供具有基板支撑构件的等离子体蚀刻室（10; 900; 2500）。衬底支撑构件具有设置在其中的用于端点检测的至少两个光学部件。用于光掩模蚀刻的增强过程监测通过使用各种光学测量技术来在光掩模的不同位置进行监测来实现。

62. 发明授权

EP1583135B1 Proximity head heating method and apparatus 有权
标题翻译：的加热方法和在接近加热装置朝向为半导体晶片生产
公开(公告)号：EP1583135B1
公开(公告)日：2008-01-16
申请号：EP05251719.0
申请日：2005-03-21
申请人： Lam Research Corporation
发明人： Mikhaylichenko, Katrina , deLarios, John
IPC分类号： H01L21/00 , C23C18/16 , C25D5/22 , C25D7/12 , B08B3/00 , B08B3/04
CPC分类号： H01L21/67023 , B08B3/02 , C25D17/00 , C25D17/001 , C25D21/02 , H01L21/67028 , H01L21/6704 , H01L21/67051 , H01L21/67063 , H01L21/6708 , H01L21/67109

63. 发明公开

EP1612847A3 Cleaning apparatus 有权
标题翻译：净化器
公开(公告)号：EP1612847A3
公开(公告)日：2007-11-28
申请号：EP05253885.7
申请日：2005-06-22
申请人： LAM RESEARCH CORPORATION
发明人： O'Donnell, Robert J.
IPC分类号： H01L21/00
CPC分类号： H01L21/67051 , B05C5/02 , B05C11/1039 , H01L21/02057 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , H01L21/67075 , H01L21/6708 , Y10S134/902
摘要： An apparatus for processing a substrate is provided which includes a proximity head proximate to a surface of the substrate when in operation. The apparatus also includes an opening on a surface of the proximity head to a cavity defined in the proximity head where the cavity delivers an active agent to the surface of the substrate through the opening. The apparatus further includes a plurality of conduits on the surface of the proximity head that generates a fluid meniscus on the surface of the substrate surrounding the opening.

64. 发明公开

EP1855794A2 ETCHING CHAMBER WITH SUBCHAMBER 有权转让
标题翻译：较低的腔体刻蚀室
公开(公告)号：EP1855794A2
公开(公告)日：2007-11-21
申请号：EP06735657.6
申请日：2006-02-22
申请人： Xactix, Inc.
发明人： LEBOUITZ, Kyle, S. , HINDS, Edward, F.
IPC分类号： B01J15/00
CPC分类号： H01L21/67069 , H01L21/67063 , H01L21/67745 , H01L21/67751
摘要： In an apparatus for etching a semiconductor wafer or sample (101), the semiconductor wafer or sample is placed on a sample holder (104) disposed in a first chamber (103). The combination of the semiconductor wafer or sample and the sample holder is enclosed within a second chamber (130) inside the first chamber. Gas is evacuated from the second chamber and an etching gas is introduced into the second chamber, but not into the first chamber, to etch the semiconductor wafer or sample.

65. 发明授权

EP1601006B1 An apparatus and a method for processing a fluid meniscus 有权
标题翻译：的流体弯月面产生的装置和方法
公开(公告)号：EP1601006B1
公开(公告)日：2007-10-10
申请号：EP05251949.3
申请日：2005-03-30
申请人： LAM RESEARCH CORPORATION
发明人： Woods, Carl , Parks, John , Smith, Michael G. R.
IPC分类号： H01L21/00 , B08B3/00 , B08B3/04 , C23C18/16 , C25D7/12 , C25D5/22 , B05D1/00
CPC分类号： B08B3/02 , C25D5/08 , C25D17/00 , C25D17/001 , C25D21/00 , H01L21/02057 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67051 , H01L21/67063 , H01L21/6708 , Y10S134/902

66. 发明公开

EP1313896A4 APPARATUS AND METHOD FOR FLOW OF PROCESS GAS IN AN ULTRA-CLEAN ENVIRONMENT 审中-公开
标题翻译： VORRICHTUNG UND VERFAHRENFÜRDEN FLUSS VON PROZESSGAS IN EINER ULTRASAUBEREN UMGEBUNG
公开(公告)号：EP1313896A4
公开(公告)日：2006-02-15
申请号：EP01973670
申请日：2001-08-28
申请人： REFLECTIVITY INC
发明人： PATEL SATYADEV , SCHAADT GREGORY P , MACDONALD DOUGLAS B , MACDONALD NILES K
IPC分类号： H01L21/00 , H01L21/302 , C03C15/00 , C25F3/12 , H01L20060101
CPC分类号： H01L21/67063 , C03C15/00 , C03C2218/33 , H01L21/67017
摘要： Processes for the addition or removal of a layer or region from a workpiece (14) material by contact with a process gas, in the manufacture of a microstructure, are enhanced by the use of a recirculation of the process gas. Recirculation is effected by a pump (18) that has no sliding or abrading parts that contact the process gas nor any wet (such as oil) seals or purge gas in the pump (18). Improved processing can be achieved by a process chamber (15) that contains a baffle (16), a perforated plate (17), or both, appropriately situated in the chamber (15) to deflect the incoming process gas and distribute it over the workpiece (14) surface. In certain embodiments, a diluent gas is added to the recirculation loop (36) and continuously recirculated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop (36). Also, cooling of the process gas, etching chamber (15) and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample (14) of microscopic dimensions.
摘要翻译：通过使用工艺气体的再循环来增强在制造微结构中通过与工艺气体接触从w工件材料中添加或除去层或区域的工艺。循环由不具有接触处理气体的滑动或研磨部件的泵进行，而不是在泵中的任何湿的（例如油）密封件或吹扫气体。可以通过包含挡板，多孔板或两者的处理室来实现改进的处理，适当地位于室中以偏转进入的工艺气体并将其分布在工件表面上。在某些实施方案中，将稀释气体加入到再循环回路中并在其中连续循环，随后将工艺气体（例如蚀刻剂气体）渗出到再循环回路中。此外，处理气体，蚀刻室和/或样品台的冷却可以帮助蚀刻工艺。该方法对于从微观尺寸的样品中添加或除去材料特别有用。

67. 发明公开

EP1612845A2 Cleaning Apparatus 有权
标题翻译： Reinigungsapparat和Reingungsverfahren
公开(公告)号：EP1612845A2
公开(公告)日：2006-01-04
申请号：EP05253879.0
申请日：2005-06-22
申请人： LAM RESEARCH CORPORATION
发明人： O'Donnell, Robert J. , Anderson, Thomas W.
IPC分类号： H01L21/00
CPC分类号： H01L21/67051 , H01L21/02057 , H01L21/67017 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , H01L21/67075 , H01L21/6708
摘要： In one of the many embodiments, a method for processing a substrate is provided which includes generating a first fluid meniscus and a second fluid meniscus on a surface of the substrate where the first fluid meniscus being substantially adjacent to the second fluid meniscus. The meniscus also includes substantially separating the first fluid meniscus and the second fluid meniscus with a barrier.
摘要翻译：在许多实施例中的一个实施例中，提供了一种用于处理衬底的方法，其包括在衬底的表面上产生第一流体弯月面和第二流体弯月面，其中第一流体弯月面基本上邻近于第二流体弯液面。弯液面还包括用屏障基本上分离第一流体弯月面和第二流体弯液面。

68. 发明公开

EP1601006A2 An apparatus and a method for processing a fluid meniscus 有权
标题翻译： Eine Vorrichtung und ein Verfahren um ein Fluidmeniskus herzustellen
公开(公告)号：EP1601006A2
公开(公告)日：2005-11-30
申请号：EP05251949.3
申请日：2005-03-30
申请人： LAM RESEARCH CORPORATION
发明人： Woods, Carl , Parks, John , Smith, Michael G. R.
IPC分类号： H01L21/00 , B08B3/00 , B08B3/04 , C23C18/16 , C25D7/12 , C25D5/22 , B05D1/00
CPC分类号： B08B3/02 , C25D5/08 , C25D17/00 , C25D17/001 , C25D21/00 , H01L21/02057 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67051 , H01L21/67063 , H01L21/6708 , Y10S134/902
摘要： An apparatus for generating a fluid meniscus to be formed on a surface of a substrate is provided including a housing where the housing includes a housing surface to be placed proximate to a substrate surface of the substrate. The housing further includes a process configuration receiving region that is surrounded by the housing surface. The apparatus also includes a process configuration insert which has an insert surface where the process configuration insert is defined to fit within the process configuration receiving region of the housing such that the insert surface and the housing surface define a proximity face that can be placed proximate to the substrate surface of the substrate.
摘要翻译：提供了一种用于产生要形成在基板的表面上的流体弯液面的装置，其包括壳体，其中壳体包括靠近基板的基板表面放置的壳体表面。壳体还包括由壳体表面包围的过程配置接收区域。该设备还包括具有插入表面的过程配置插入件，其中该过程配置插入件被限定为适合于壳体的过程配置接收区域内，使得插入表面和壳体表面限定可以靠近衬底的衬底表面。

69. 发明公开

EP1583135A1 Proximity head heating method and apparatus 有权
标题翻译：的加热方法和在接近加热装置朝向为半导体晶片生产
公开(公告)号：EP1583135A1
公开(公告)日：2005-10-05
申请号：EP05251719.0
申请日：2005-03-21
申请人： Lam Research
发明人： Mikhaylichenko, Katrina , deLarios, John
IPC分类号： H01L21/00 , C23C18/16 , C25D5/22 , C25D7/12 , B08B3/00 , B08B3/04
CPC分类号： H01L21/67023 , B08B3/02 , C25D17/00 , C25D17/001 , C25D21/02 , H01L21/67028 , H01L21/6704 , H01L21/67051 , H01L21/67063 , H01L21/6708 , H01L21/67109
摘要： Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer.

70. 发明公开

EP1582269A1 Proximity meniscus manifold 有权
标题翻译：中东的液体弯月面总代理
公开(公告)号：EP1582269A1
公开(公告)日：2005-10-05
申请号：EP05251902.2
申请日：2005-03-29
申请人： LAM RESEARCH CORPORATION
发明人： Woods, Carl , Parks, John , Smith, Michael G.R. , Garcia, James P. , de Larios, John M.
IPC分类号： B05D3/12 , H01L21/00 , H01L21/306 , B05D1/00
CPC分类号： H01L21/67063 , B05C9/02 , H01L21/02052 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67051 , H01L21/6708 , Y10S134/902
摘要： An apparatus for processing a substrate is provided which includes a first manifold module to generate a fluid meniscus on a substrate surface. The apparatus also includes a second manifold module to connect with the first manifold module and also to move the first manifold module into close proximity to the substrate surface to generate the fluid meniscus.

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