会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 63. 发明公开
    • scanning memory device and error correction method
    • Abtastspeichervorrichtung und Fehlerkorrekturverfahren
    • EP0723262A2
    • 1996-07-24
    • EP95309350.7
    • 1995-12-21
    • Hewlett-Packard Company
    • Kamae, TakahikoSaito, MitsuchikaIhara, Kiyoyuki
    • G11B9/00G11B20/18G11B19/04
    • B82Y10/00G11B9/14G11B9/1481G11B20/182G11B20/1833G11B20/1883
    • A high-data density, high-data rate scanning memory device reads and writes data using a plurality of probes. The scanning memory device comprises a memory (2) composed of a matrix of cell arrays (21) each containing a submatrix of memory cells, a plurality of probes (11) having a one-to-one correspondence to each cell array, and a positioning device that operates to simultaneously change the positions of probes relative to the cell arrays. Each of the cell arrays has a cell array status memory (24) for storing information designating whether the cell array is functional or whether the cell array is defective. If the number of defective memory cells detected within each cell array exceeds some predetermined number, the cell array is designated as defective. Defective cell arrays are logically replaced by functional cell arrays. Error correction is applied to the data to reduce reading and writing errors by the scanning memory device and to maintain the integrity of data stored in the memory.
    • 高数据密度高数据速率扫描存储器件使用多个探针读取和写入数据。 扫描存储装置包括由每个包含存储器单元的子矩阵的单元阵列(21)矩阵组成的存储器(2),与每个单元阵列具有一一对应关系的多个探针(11),以及 定位装置,其操作以同时改变探针相对于单元阵列的位置。 每个单元阵列具有单元阵列状态存储器(24),用于存储指定单元阵列是功能性还是单元阵列有缺陷的信息。 如果每个单元阵列内检测到的有缺陷的存储单元的数量超过预定数量,则将单元阵列指定为缺陷。 有缺陷的单元阵列在逻辑上被功能单元阵列所取代。 对数据应用错误校正,以减少扫描存储器件的读写错误并保持存储在存储器中的数据的完整性。
    • 68. 发明公开
    • Electronic circuits including atomic probe
    • Elektronische Schaltungen mit Atomsonde。
    • EP0382062A2
    • 1990-08-16
    • EP90101836.6
    • 1990-01-30
    • OLYMPUS OPTICAL CO., LTD.
    • Toda, AkitoshiShimizu, RyouheiOhta, HirokoKajimura, HiroshiMimura, YoshiyukiIsono, YasuoKouchi, Toshihito
    • G11B9/00G11B11/00G11B27/24G11B27/30G06F5/06G06F7/00G01N27/00
    • G06F7/785B82Y10/00G01Q80/00G06F5/01G06F5/10G06F7/768G06F2205/104G11B9/14G11B9/1418G11B9/1481G11B27/19G11B27/3027Y10S977/861Y10S977/947
    • As a first one of electronic circuits including an atomic prob, a micro STM arithmetic circuit device is provided. The micro STM arithmetic circuit device comprises an information-rewritable micro STM recording medium (10; 34; 58; 68) and a micro STM recording apparatus which temporarily stores information on the recording medium such that the information can be read as a variation in a tunnel current. The recording apparatus has a probe (probes) (12; 36, 38, 40, 42, 44; 54, 56; 70) for writing/reading information on the recording medium and a scanner (72) for varying a position relation between the probe and the recording medium. As a second application of the electronic circuits, a micro STM recording apparatus is provided. The micro STM recording apparatus uses a recording medium having a specific format as the micro STM recording medium (86; 98; 102; 106; 110; 126) in which recorded information is read as a variation in a tunnel current. That is, the recording medium has an address area (92) in which address information is recorded and a data area (94) in which data information is recorded.
    • 作为包括原子概率的电子电路的第一个,提供了微STM运算电路装置。 微STM算术电路装置包括信息可重写微STM记录介质(10; 34; 58; 68)和微型STM记录装置,其临时存储关于记录介质的信息,使得可以将信息作为变化读取 隧道电流。 记录装置具有用于在记录介质上写入/读取信息的探针(探针)(12; 36,38,40,42; 54,56; 70)和用于改变记录介质之间的位置关系的扫描仪(72) 探头和记录介质。 作为电子电路的第二应用,提供了一种微STM记录装置。 微型STM记录装置使用具有特定格式的记录介质作为其中读取记录信息作为隧道电流的变化的微STM记录介质(86; 98; 102; 106; 110; 126)。 也就是说,记录介质具有其中记录有地址信息的地址区域(92)和记录有数据信息的数据区域(94)。