会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 62. 发明公开
    • Plasma thin film deposition process control
    • Kontrolle eines Verfahrens zur Abscheidung einesdünnenFilmes mittels Plasma。
    • EP0299752A2
    • 1989-01-18
    • EP88306431.3
    • 1988-07-13
    • The BOC Group, Inc.
    • Felts, John TLopata, Eugene S.
    • C23C14/22C23C14/34C23C16/44C23C16/52G01N21/00
    • C23C14/0042C23C14/54C23C16/52
    • In a process of depositing a thin film onto a surface of a substrate with the use of a plasma, wherein the plasma optical emission is monitored, analyzed, and the results used to automatically control the nature of the plasma in order to control the characteristics of the deposited thin film. One aspect of the emission that is detected is the intensity of each of two emission lines of different wavelength bands from the same plasma species, the intensities being ratioed and the ratio compared to a predetermined value known to provide a resulting film with uniform and repeatable characteristics. This ratio is also related to the average electron temperature of the plasma, which can be calculated from it. Additionally, the intensity of another emission line from another of the plasma species may be measured and ratioed to one of the foregoing line intensities if additional control is desired.
    • 在使用等离子体将薄膜沉积到衬底的表面上的过程中,其中监测,分析等离子体发射,并且用于自动控制等离子体性质的结果以控制等离子体的特性 沉积的薄膜。 检测到的发射的一个方面是来自相同等离子体种类的不同波长带的两个发射线中的每个发射线的强度,比例的强度和与已知提供具有均匀和可重复特性的所得膜的预定值相比的比率 。 该比例也与等离子体的平均电子温度有关,可从其计算。 另外,如果需要额外的控制,则可以测量来自另一个等离子体物质的另一发射线的强度并且与上述线强度之一成比例。
    • 65. 发明公开
    • Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias
    • 磁控溅射,设置有单独的磁约束场与靶相隔,并与一个由射频极化加强。
    • EP0227438A2
    • 1987-07-01
    • EP86309903.2
    • 1986-12-18
    • VARIAN ASSOCIATES, INC.
    • Mintz, Donald M.
    • H01J37/34
    • C23C14/54C23C14/351H01J37/3405H01J37/3408H01J37/3458
    • A first target for a magnetron sputter device has a planar annular emitting surface bounded by an inner radius R1 and an outer radius R2. A second target has a sloped emitting surface defined by a side wall of a frustum of a cone. The second target is limited by an inner radius R3 and outer radius R4. R3 is greater than R2. Each target element has pins in diametrically opposite holes to assist in holding the target elements in situ in bayonet slots in the sputter device. The targets are fit closely in cooling rings so that as the targets heat during operation, thermal expansion of the targets assists thermal conduction into the cooling rings. A coil is formed behind the workpiece to act as a mirror to the plasma. The field of the coil moves the plasma away from the workpiece which permits putting high power R.F. bias on the workpiece. The R.F. bias in combination with gas heating the wafer from behind aids in sputtering a coating of superior conformality.
    • 为磁控溅射装置的第一目标具有通过在内半径R1和R2的外半径为界的平面环形设计发射面。 第二靶具有通过圆锥台的侧壁所限定的倾斜发射表面。 第二目标是通过在innerRadius R3和R4 outerRadius限制。 R3大于R2。 每个目标元件具有在直径上相对的孔中的销,以帮助保持在卡口槽的原位靶元素在溅射装置。 这些目标是紧密配合在冷却环所以也:作为目标手术期间加热时,靶的热膨胀有助于热传导到冷却环。 甲线圈工件充当镜到等离子体的后方形成。 线圈的领域从工件允许把高功率射频移动血浆远 偏在工件上。 该射频 偏压与气体中溅射保形优越的涂层从后面助剂加热晶片组合。