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51. 发明授权

EP1215309B1 SILICON WAFER AND METHOD FOR MANUFACTURE THEREOF, AND METHOD FOR EVALUATION OF SILICON WAFER 有权
标题翻译：硅晶片及其制造方法以及评估硅晶片的方法
公开(公告)号：EP1215309B1
公开(公告)日：2010-01-06
申请号：EP00955019.5
申请日：2000-08-25
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha
发明人： KOMIYA, Satoshi,c/o SUMCO TECHXIV CORPORATION , YOSHINO, Shiro,c/o SUMCO TECHXIV CORPORATION , DANBATA, Masayoshi,c/o SUMCO TECHXIV CORPORATION , HAYASHIDA,Kouichirou,c/oSUMCO TECHXIV CORPORATION
IPC分类号： C30B29/06 , C30B15/04 , C30B15/00
CPC分类号： C30B15/00 , C30B29/06

52. 发明公开

EP2098620A1 Method of manufacturing silicon substrate 审中-公开
标题翻译：伊斯法罕zum Herstellen eines Siliziumsubstrats
公开(公告)号：EP2098620A1
公开(公告)日：2009-09-09
申请号：EP09003022.2
申请日：2009-03-03
申请人： SUMCO CORPORATION
发明人： Kurita, Kazunari , Omote, Shuichi
IPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B33/02
CPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B33/02
摘要： A method of manufacturing a silicon substrate includes: growing a silicon single crystal having a carbon concentration in the range of 1.0 × 10 16 atoms/cm 3 to 1.6 × 10 17 atoms/cm 3 and an initial oxygen concentration in the range of 1.4 × 10 18 atoms/cm 3 to 1.6 × 10 18 atoms/cm 3 using a CZ method; slicing the silicon single crystal; forming an epitaxial layer on the sliced silicon single crystal; and performing a heat treatment thereon as a post-annealing process at a temperature in the range of 600°C to 850°C.
摘要翻译：制造硅衬底的方法包括：生长碳浓度在1.0×10 16原子/ cm 3至1.6×10 17原子/ cm 3范围内的初始氧浓度在1.4× 10 18原子/ cm 3至1.6×10 18原子/ cm 3; 切片硅单晶; 在切片的硅单晶上形成外延层; 并在600℃至850℃的温度范围内作为后退火工艺进行热处理。

53. 发明公开

EP1840248A4 SEMICONDUCTOR SINGLE CRYSTAL PRODUCING DEVICE AND PRODUCING METHOD 有权转让
标题翻译：方法和制造装置HALF单晶
公开(公告)号：EP1840248A4
公开(公告)日：2009-07-01
申请号：EP05816745
申请日：2005-12-13
申请人： SUMCO TECHXIV KABUSHIKI KAISHA
发明人： NODA AKIKO , IIDA TETSUHIRO
IPC分类号： C30B15/00 , C30B29/06
CPC分类号： C30B15/14 , C30B15/00 , C30B15/10 , C30B29/06 , Y10T117/10 , Y10T117/1052 , Y10T117/106 , Y10T117/108
摘要： The deposition and condensation of evaporated matters and reaction products are controlled to prevent an exhaust pipe from clogging by allowing evaporated matters and reaction products produced in a furnace to be exhausted without contacting a graphite crucible and a heater and by keeping an exhaust pipe itself at high temperature, the exhaust pipe is prevented from being formed into SiC to improve the durability of the exhaust pipe, and a thermal single crystal can be pulled up in high quality by preventing a change in thermal expansion coefficient. An exhaust pipe constituted of fewer materials will reduce production costs. A heat shield (12) formed of an insulation material is provided on the outer side of a heater (6), and a plurality of exhaust pipes (20) are provided between the heater (6) and the heat shield (12). The plurality of exhaust pipes (20) are allowed to communicate with a plurality of exhaust ports (8b(22b)) provided in the bottom of a chamber (1).

54. 发明公开

EP2057304A2 METHOD AND APPARATUS FOR FORMING A SILICON WAFER 审中-公开
标题翻译：方法和设备用于生产硅晶片
公开(公告)号：EP2057304A2
公开(公告)日：2009-05-13
申请号：EP07844643.2
申请日：2007-10-26
申请人： Evergreen Solar Inc.
发明人： VAN GLABBEEK, Leo , ATCHLEY, Brian , JANOCH, Robert, E. , ANSELMO, Andrew, P. , REITSMA, Scott
IPC分类号： C30B15/00 , C30B33/00
CPC分类号： C30B15/005 , C30B15/34 , C30B33/00 , Y10T117/102
摘要： A furnace for growing a ribbon crystal has a channel for growing a ribbon crystal at a given rate in a given direction, and a separating mechanism for separating a portion from the growing ribbon crystal. At least a part of the separating mechanism moves at about the given rate and in about the given direction while separating the portion from the growing ribbon crystal.

55. 发明公开

EP1375705A4 SILICON SEMICONDUCTOR SINGLE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING METHOD 有权
标题翻译： VORRICHTUNG ZUR HERSTELLUNG VON SILIZIUM-HALBLEITER-EINKRISTALLEN UNDZUGEHÖRIGESHERSTELLUNGSVERFAHREN
公开(公告)号：EP1375705A4
公开(公告)日：2009-01-28
申请号：EP01976841
申请日：2001-10-26
申请人： SHINETSU HANDOTAI KK
发明人： HOSHI RYOJI , YANAGIMACHI TAKAHIRO , FUSEGAWA IZUMI , OHTA TOMOHIKO , MIYAHARA YUUICHI , IGARASHI TETSUYA
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/20
CPC分类号： C30B15/14 , C30B15/206 , C30B29/06 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A silicon semiconductor single crystal manufacturing apparatus, in which stabilization and unformization of the amount of precipitation of oxygen along the axis of growth of a silicon single crystal of silicon semiconductor by a Czochralski growth method is realized. The apparatus comrpises a main growth furnace accommodation a crucible holding a silicon melt and adapted for growing a silicon semiconductor single crystal and an upper growth furnace accommodating the silicon semiconductor single crystal pulled up from the silicon melt and cooling it. The upper growth furnace communicates with the ceiling portion of the main growth furnace, and an upper heat insulating material surrounding the silicon semiconductor single crystal pulled up is provided in the upper growth furnace.
摘要翻译：一种硅半导体单晶制造设备，其中通过切克劳斯基生长方法实现氧沿着硅半导体硅单晶的生长轴的沉淀量的稳定化和未形成。该装置包括容纳容纳硅熔体并适于生长硅半导体单晶的坩埚的主生长炉，以及容纳从硅熔体中拉出的硅半导体单晶并将其冷却的上生长炉。上部生长炉与主生长炉的顶部连通，并且在上部生长炉中设置围绕提拉的硅半导体单晶的上部绝热材料。

56. 发明公开

EP1614774A4 PROCESS FOR PRODUCING SINGLE CRYSTAL 审中-公开
标题翻译： EINKRISTALLHERSTELLUNGSVERFAHREN
公开(公告)号：EP1614774A4
公开(公告)日：2008-12-24
申请号：EP04724388
申请日：2004-03-30
申请人： SHINETSU HANDOTAI KK
发明人： HOSHI RYOJI , SONOKAWA SUSUMU
IPC分类号： C30B15/20 , C30B15/00 , C30B15/04 , C30B29/06
CPC分类号： C30B29/06 , C30B15/20
摘要： A process for producing a single crystal according to the Czochralski method wherein a polycrystalline raw material is put in a crucible, then the polycrystalline raw material is melted by heating by means of a heater arranged so as to surround the crucible and thereafter a seed crystal is fused to the raw material melt and pulled up to thereby effect single crystal growth, characterized in that in the growth of single crystal whose resistivity has been regulated by boron doping, the single crystal growth is performed while controlling the maximum temperature of the crucible at 1600°C or below. In the production of boron-doped single crystal having high gettering capability, the single crystal can be produced by the above process at high productivity and at low cost while inhibiting any dislocation generation.
摘要翻译：一种根据切克劳斯基法制造单晶的方法，其中将多晶原材料放入坩埚中，然后通过加热器熔化多晶原材料，所述加热器以围绕坩埚的方式布置，然后晶种为与原料熔体熔融并拉起，从而实现单晶生长，其特征在于，在电阻率已由硼掺杂调节的单晶的生长中，在控制坩埚的最高温度为1600℃的同时进行单晶生长 °C或更低。在具有高吸杂能力的硼掺杂单晶的生产中，可以通过上述工艺以高生产率和低成本生产单晶，同时抑制任何位错生成。

57. 发明公开

EP1231301A4 EPITAXIAL SILICON WAFER 审中-公开
标题翻译：硅外延DISC
公开(公告)号：EP1231301A4
公开(公告)日：2008-12-17
申请号：EP00939172
申请日：2000-06-26
申请人： KOMATSU DENSHI KINZOKU KK
发明人： KOMIYA SATOSHI , YOSHINO SHIRO , DANBATA MASAYOSHI , HAYASHIDA KOUICHIROU
IPC分类号： H01L21/205 , C30B15/00 , C30B29/06 , H01L21/322
CPC分类号： C30B15/04 , C30B15/00 , C30B29/06
摘要： An epitaxial silicon wafer which comprises a silicon wafer produced by a method characterized as comprising pulling up a silicon single crystal under a condition wherein when an oxygen concentration is 7 x 10 atoms/cm a nitrogen concentration is about 3 x 10 atoms/cm or less, and when an oxygen concentration is 1.6 x 10 atoms/cm a nitrogen concentration is about 3 x 10 atoms/cm or less, and, an epitaxial film formed on the wafer. The epitaxial film, being formed on such a wafer, has crystal defects, which are observed as LPD of 120 nm or more on the epitaxial film, in a range of 20 pieces/200 mm wafer or less. The epitaxial silicon wafer contains nitrogen atoms doped therein and also has satisfactory characteristics as that for use in a semiconductor device.

58. 发明公开

EP1346087A4 ENERGY PATHWAY ARRANGEMENT 审中-公开
标题翻译：能源之路安排
公开(公告)号：EP1346087A4
公开(公告)日：2008-10-29
申请号：EP01994116
申请日：2001-11-29
申请人： X2Y ATTENUATORS LLC
发明人： ANTHONY ANTHONY A , MUCCIOLI JAMES P , ANTHONY WILLIAM M
IPC分类号： H01G4/35 , H01G4/38 , C30B20060101 , C30B15/00 , C30B29/06 , H01G4/06 , H03H1/00 , H05K9/00
CPC分类号： H01G4/35 , H01G4/38 , H01G4/40 , H03H1/0007 , H03H2001/0014 , H03H2001/0085
摘要： An energy conditioning arrangement (813) having energy pathways for conditioning energies of one or multiple of circuitry.

59. 发明公开

EP1662024A4 PROCESS FOR PRODUCING SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL WAFER 有权转让
标题翻译：用于生产单晶与硅晶片
公开(公告)号：EP1662024A4
公开(公告)日：2008-10-15
申请号：EP04771652
申请日：2004-08-13
申请人： SHINETSU HANDOTAI KK
发明人： FUSEGAWA IZUMI , MITAMURA NOBUAKI , YANAGIMACHI TAKAHIRO
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20
CPC分类号： C30B15/20 , C30B29/06 , Y10T117/1068
摘要： A process for producing a single crystal, comprising encircling with straightening pipe (4) single crystal (3) having been pulled up from raw material melt (2) while effecting downflow of an inert gas in chamber (1) of single crystal pullup apparatus (11) according to the Czochralski method, characterized in that at the pullup of single crystal of N region outside OSF region occurring in ring form in the direction of diameter of the single crystal, the single crystal of N region is pulled up under conditions such that providing that D(mm) refers to the diameter of single crystal pulled up, the flow rate of inert gas in the interstice between the single crystal and the straightening pipe is 0.6D(L/min) or higher and such that the pressure within the chamber is 0.6D(hPa) or below. It is preferred that as the straightening pipe, use be made of one whose Fe concentration in at least surface portion is 0.05 ppm or less. Thus, there is provided a process for producing a single crystal wherein in the production of a single crystal by the use of an apparatus fitted with straightening pipe according to the CZ method, there can be realized low defect occurrence and suppression of Fe concentration even in circumferential portion to 1x10 atoms/cm or below.

60. 发明公开

EP1897977A1 METHOD OF GROWING SILICON SINGLE CRYSTAL 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG VON SILICIUMEINKRISTALL
公开(公告)号：EP1897977A1
公开(公告)日：2008-03-12
申请号：EP05811258.2
申请日：2005-12-01
申请人： SUMCO Corporation
发明人： INAMI, Shuichi c/o SUMCO CORPORATION , TAKASE, Nobumitsu c/o SUMCO CORPORATION , KOGURE, Yasuhiro c/o SUMCO CORPORATION , HAMADA, Ken c/o SUMCO CORPORATION , NAKAMURA, Tsuyoshi c/o SUMCO CORPORATION
IPC分类号： C30B29/06 , C30B15/00
CPC分类号： C30B29/06 , C30B15/04 , C30B15/14
摘要： The invention relates to a method for growing a silicon single crystal. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.
摘要翻译：本发明涉及一种生长硅单晶的方法。在晶体生长期间，将热应力施加到至少一部分硅单晶。使用惰性气体和含有氢原子的气态物质的混合气体作为用于生长晶体的气氛气体。

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