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41. 发明公开

EP2881775A4 IMAGING DEVICE 有权
标题翻译： BILDGEBUNGSVORRICHTUNG
公开(公告)号：EP2881775A4
公开(公告)日：2016-02-24
申请号：EP13828303
申请日：2013-07-31
申请人： FUJIFILM CORP
发明人： ONO SHUJI
IPC分类号： G02B7/02 , G02B7/28 , G02B7/34 , G03B13/36 , H04N5/225
CPC分类号： H04N13/0228 , G02B3/0006 , G02B3/0043 , G02B3/10 , G02B3/14 , G02B5/06 , G02B7/343 , G02B7/38 , G02B27/0075 , G03B13/36 , H01L27/14623 , H01L27/14627 , H04N5/2251 , H04N13/0232 , H04N13/0282
摘要： The present invention provides an imaging device capable of dramatically increasing the number of taken images at different focal distances that are simultaneously obtainable. An embodiment of the present invention provides an imaging device 10 having an imaging optical system for a so-called plenoptic camera, with a multifocal microlens array (14) provided between a multifocal main lens (12) and an image sensor (16). The multifocal main lens (12) has regions (12a, 12b) with different focal lengths, and the multifocal microlens array (14) has microlens groups (14a, 14b) with different focal lengths. By combining the multifocal main lens (12) and the multifocal microlens array (14), a plurality of images at different focal distances that are simultaneously obtainable can be obtained from the image sensor (16).
摘要翻译：本发明提供能够显着增加可同时获得的不同焦距的拍摄图像数量的成像装置。本发明的一个实施例提供一种成像装置10，其具有用于所谓的全光照相机的成像光学系统，其中多焦点微透镜阵列（14）设置在多焦点主透镜（12）和图像传感器（16）之间。多焦点主透镜（12）具有不同焦距的区域（12a，12b），多焦点微透镜阵列（14）具有不同焦距的微透镜组（14a，14b）。通过组合多焦点主透镜（12）和多焦点微透镜阵列（14），可以从图像传感器（16）获得同时可获得的不同焦距的多个图像。

42. 发明公开

EP2981069A1 PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM 有权
标题翻译：电影乐团UMWANDLUNGSVORRICHTUNG UND FOTOELEKTRISCHES UMWANDLUNGSSYSTEM
公开(公告)号：EP2981069A1
公开(公告)日：2016-02-03
申请号：EP15176840.5
申请日：2015-07-15
申请人： Canon Kabushiki Kaisha
发明人： HASHIMOTO, Seiji , TAKAHASHI, Hidekazu , FURUBAYASHI, Atsushi
IPC分类号： H04N5/3745
CPC分类号： H04N5/3742 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14627 , H01L27/14641 , H01L27/14647 , H01L27/14667 , H01L31/035218 , H04N5/3745 , H04N5/37452 , H04N5/378 , H04N9/045
摘要： A photoelectric conversion apparatus (10) including a plurality of photoelectric conversion units (101a, 101b) each of which includes a first electrode (201), a second electrode (209), a photoelectric conversion layer (205) which accumulates signal charges and which is disposed between the first and second electrodes, and an insulating layer (207) disposed between the photoelectric conversion layer and the second electrode, an amplification unit (16a) configured to receive optical signals and output signals each based on one of the optical signals, each of the optical signals being based on one of the signal charges, each of the signal charges being accumulated in one of the plurality of photoelectric conversion units, and a capacitive element (12b) having a first node and a second node, the first node being connected to the second electrodes of the plurality of photoelectric conversion units and the amplification unit and the second node selectively receiving each one of a plurality of potentials having different values.
摘要翻译：一种包括多个光电转换单元（101a，101b）的光电转换装置（10），每个光电转换单元包括第一电极（201），第二电极（209），积累信号电荷的光电转换层（205）设置在第一和第二电极之间，以及设置在光电转换层和第二电极之间的绝缘层（207），放大单元（16a）被配置为基于光信号之一接收光信号和输出信号，每个光信号基于信号电荷中的一个，每个信号电荷积累在多个光电转换单元中的一个中，以及具有第一节点和第二节点的电容元件（12b），第一节点连接到多个光电转换单元的第二电极，并且放大单元和第二节点选择性地接收多个光电转换单元中的每一个 f具有不同值的电位。

43. 发明公开

EP2980850A1 IMAGING ELEMENT AND ELECTRONIC EQUIPMENT 有权转让
标题翻译： ELEKTRONISCHE VORRICHTUNG DAMIT的BILDAUFZEICHNUNGSELEMENT
公开(公告)号：EP2980850A1
公开(公告)日：2016-02-03
申请号：EP14775866.8
申请日：2014-03-12
申请人： Sony Corporation
发明人： NAKATA Masashi
IPC分类号： H01L27/146 , G02B7/34 , G03B13/36 , H01L27/14 , H04N5/369 , H04N9/04 , H04N9/07
CPC分类号： H04N5/23212 , G02B7/34 , G03B13/36 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H04N5/2254 , H04N5/265 , H04N5/3696 , H04N9/045
摘要： The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.
摘要翻译：本技术涉及能够获得更高质量图像的图像传感器和电子设备。提供了包括多个像素的图像传感器，每个像素包括一个片上透镜，以及形成在片上透镜下方的多个光电转换层。多个光电转换层中的至少两个相对于光接收表面被分裂，部分地形成或部分地被遮蔽。像素是用于通过相位差检测执行AF或用于产生图像的成像像素的相位差检测像素。例如，本技术可以应用于CMOS图像传感器。

44. 发明公开

EP2805353A4 SOLID-STATE IMAGE SENSOR AND CAMERA 失效
标题翻译：固态图像传感器和摄像头
公开(公告)号：EP2805353A4
公开(公告)日：2015-12-23
申请号：EP13738370
申请日：2013-01-09
申请人： CANON KK
发明人： OKITA AKIRA , KOBAYASHI MASAHIRO
IPC分类号： H01L27/146 , H01L31/10 , H01L31/103 , H04N5/335
CPC分类号： H01L27/14812 , H01L27/14605 , H01L27/1461 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14806 , H01L31/103
摘要： An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along a surface of the substrate. A potential barrier is formed between the plurality of portions. The second semiconductor region is wholly depleted by expansion of a depletion region from the first semiconductor region to the second semiconductor region. A finally-depleted portion to be finally depleted, of the second semiconductor region, is depleted by the expansion of the depletion region from a portion of the first semiconductor region, located in a lateral direction of the finally-depleted portion.

45. 发明授权

EP1667231B1 Method of manufacturing a SOLID-STATE IMAGING DEVICE 有权
标题翻译：维尔法赫恩·赫斯特隆·艾伦·费斯特霍尔比尔多
公开(公告)号：EP1667231B1
公开(公告)日：2015-11-11
申请号：EP03762904.5
申请日：2003-07-09
申请人： Toppan Printing Co., Ltd.
发明人： FUKUYOSHI, Kenzo , ISHIMATSU, Tadashi , KITAMURA, Satoshi , OGATA, Keisuke
IPC分类号： G02B5/20 , G02B3/00 , H01L27/146
CPC分类号： G02B3/0018 , G02B3/0056 , G02B5/201 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/02162 , H01L31/02327

46. 发明授权

EP1900031B1 SEPARATION TYPE UNIT PIXEL OF 3-DIMENSIONAL IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权转让
标题翻译：用于制造三维图像传感器和过程分离型单位像素
公开(公告)号：EP1900031B1
公开(公告)日：2015-10-21
申请号：EP06769059.4
申请日：2006-06-27
申请人： SiliconFile Technologies Inc.
发明人： LEE, Do Young 402-1002 Hansol-Apt
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/1469

47. 发明授权

EP1876648B1 Method and apparatus for increasing light absorption in an image sensor using energy conversion layer 有权转让
标题翻译：一种用于提高图像传感器的光吸收的方法和设备装置的能量转换层的
公开(公告)号：EP1876648B1
公开(公告)日：2015-10-14
申请号：EP07111760.0
申请日：2007-07-04
申请人： OmniVision Technologies, Inc.
发明人： He, James Xinping , Tsau, Guannho George , Hu, Ching
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14663

48. 发明公开

EP2909862A1 SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 有权转让
标题翻译： HALBLEITERBAUEMENT，FESTKÖRPERBILDGEBUNGSVORRICHTUNGELEKTRONISCHE VORRICHTUNG
公开(公告)号：EP2909862A1
公开(公告)日：2015-08-26
申请号：EP13780221.1
申请日：2013-10-10
申请人： Sony Corporation
发明人： UMEBAYASHI, Taku , TATANI, Keiji , INOUE, Hajime , KANAMURA, Ryuichi
IPC分类号： H01L27/146
CPC分类号： H01L27/14645 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/1469
摘要： A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.
摘要翻译：一种半导体器件，包括在其一侧包括第一布线层的第一半导体部分，所述第一半导体部分还包括光电二极管，在其一侧包括第二布线层的第二半导体部分，所述第一和第二半导体部分被固定在一起第一半导体部分，第二半导体部分和第三半导体部分被堆叠在一起，第一和第三半导体部分被固定在一起，并且第一导电材料电连接（i）第一布线层，（ii）第二布线层和（iii）第三布线层中的至少两个，使得电连接的布线层电连通。

49. 发明授权

EP2030239B1 METHOD OF MANUFACTURING AN IMAGE SENSOR USING BACK-ILLUMINATED PHOTODIODE 有权转让
标题翻译：处理对背照式光电二极管使用的图像传感器
公开(公告)号：EP2030239B1
公开(公告)日：2015-08-12
申请号：EP07746910.4
申请日：2007-06-14
申请人： SiliconFile Technologies Inc.
发明人： LEE, Byoung Su , WON, Jun Ho
IPC分类号： H01L27/146
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14687

50. 发明公开

EP2860758A3 Optical element array, photoelectric conversion apparatus, and image pickup system 审中-公开
标题翻译：光学元件，光电转换装置和成像系统的布置
公开(公告)号：EP2860758A3
公开(公告)日：2015-05-20
申请号：EP14188208.4
申请日：2014-10-08
申请人： CANON KABUSHIKI KAISHA
发明人： Igarashi, Kazuya , Kawabata, Kazunari , Iba, Jun
IPC分类号： H01L27/146
CPC分类号： G02B3/0037 , H01L27/14627 , H01L27/14643 , H04N5/369
摘要： An optical element array includes a first optical element (111) and a second optical element (112) that is further away from a center of an array region than the first optical element (111). Orthogonal projections of the first and second optical elements (111, 112) include first and second ends (201, 202) and third and fourth ends (203, 204), respectively, and vertices thereof are at first and second positions. An interval between the third end (203) and the second position is smaller than that between the first end (201) and the first position and that between the fourth end (204) and that second position. The first and second optical elements (111, 112) respectively include first and second outer edges (241, 242) extending from the vertices thereof to the second and fourth ends (202, 204). A radius of curvature, or a median value of the radius of curvature, of the second outer edge (242) is in the range of 80% to 120% of that of the first outer edge (241).

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