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1. 发明授权

EP2981069B1 PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM 有权
公开(公告)号：EP2981069B1
公开(公告)日：2018-12-05
申请号：EP15176840.5
申请日：2015-07-15
申请人： Canon Kabushiki Kaisha
发明人： HASHIMOTO, Seiji , TAKAHASHI, Hidekazu , FURUBAYASHI, Atsushi
IPC分类号： H04N9/04 , H04N5/378 , H04N5/374 , H01L27/146 , H01L31/0352 , H04N5/3745
CPC分类号： H04N5/3742 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14627 , H01L27/14641 , H01L27/14647 , H01L27/14667 , H01L31/035218 , H04N5/3745 , H04N5/37452 , H04N5/378 , H04N9/045
摘要： A photoelectric conversion apparatus (10) including a plurality of photoelectric conversion units (101a, 101b) each of which includes a first electrode (201), a second electrode (209), a photoelectric conversion layer (205) which accumulates signal charges and which is disposed between the first and second electrodes, and an insulating layer (207) disposed between the photoelectric conversion layer and the second electrode, an amplification unit (16a) configured to receive optical signals and output signals each based on one of the optical signals, each of the optical signals being based on one of the signal charges, each of the signal charges being accumulated in one of the plurality of photoelectric conversion units, and a capacitive element (12b) having a first node and a second node, the first node being connected to the second electrodes of the plurality of photoelectric conversion units and the amplification unit and the second node selectively receiving each one of a plurality of potentials having different values.

2. 发明公开

EP1051762A1 X-Y ADDRESSABLE ELECTRIC MICROSWITCH ARRAYS AND SENSOR MATRICES EMPLOYING THEM 审中-公开
标题翻译： X-Y可寻址的电MICROSWITCH安排及其USE IN传感器阵列
公开(公告)号：EP1051762A1
公开(公告)日：2000-11-15
申请号：EP99904545.3
申请日：1999-02-02
申请人： UNIAX CORPORATION
发明人： YU, Gang , CAO, Yong
IPC分类号： H01L51/20 , H01L27/146
CPC分类号： H01L27/307 , B82Y10/00 , H01L27/1446 , H01L27/14609 , H01L27/14643 , H01L27/14667 , H01L27/14676 , H01L27/14687 , H01L27/28 , H01L27/285 , H01L27/30 , H01L27/308 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0041 , H01L51/0046 , H01L51/0047 , H01L51/0081 , H01L51/0583 , H01L51/0591 , H01L51/4206 , H01L51/424 , H01L51/4253 , Y02E10/549
摘要： The present invention relates generally to fabricating two-terminal electric microswitches comprising thin semiconductor films and using these microswitches to construct column-row (x-y) addressable microswitch matrices. These microswitches are two terminal devices through which electric current and electric potential (or their derivates or integrals) can be switched on and off by the magnitude or the polarity of the external bias. The microswitches are made from semiconducting thin films in an electrode/semiconductor/electrode, thin film configuration. Column-row addressable electric microswitch matrices can be made in large areas, with high pixel density. Such matrices can be integrated with a sensor layer with electronic properties which vary in response to external physical conditions (such as photon radiation, temperature, pressure, magnetic field and so on), thereby forming a variety of detector matrices.

3. 发明授权

EP0145199B1 Contact color image sensor 失效
标题翻译：联系颜色图像传感器
公开(公告)号：EP0145199B1
公开(公告)日：1991-12-18
申请号：EP84307341.2
申请日：1984-10-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Saito, Tamio c/o Patent Division , Nakai, Toshio c/o Patent Division
IPC分类号： H01L31/0216 , H01L27/146
CPC分类号： H04N1/486 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14667 , H01L27/14678

4. 发明授权

EP0173413B1 Color image sensor 失效
标题翻译：彩色图像传感器
公开(公告)号：EP0173413B1
公开(公告)日：1990-07-25
申请号：EP85303600.2
申请日：1985-05-22
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Nakai, Toshio c/o Patent Division , Saito, Tamio c/o Patent Division
IPC分类号： H04N1/46
CPC分类号： H01L27/14667 , H04N1/486

5. 发明公开

EP0145199A2 Contact color image sensor 失效
标题翻译：色标检测器接触式。
公开(公告)号：EP0145199A2
公开(公告)日：1985-06-19
申请号：EP84307341.2
申请日：1984-10-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Saito, Tamio c/o Patent Division , Nakai, Toshio c/o Patent Division
IPC分类号： H01L31/0216 , H01L27/146
CPC分类号： H04N1/486 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14667 , H01L27/14678
摘要： A contact-type color image sensor in which pixel electrodes (2a - 2d) are linearly provided in a main scanning direction and three (or four) rows thereof are arrayed in a subscanning direction, color filters (8a - 8c) for color- separating are provided to oppose the pixel electrodes (2a - 2d), an amorphous semiconductor film (4) is formed on the pixel electrodes (2a - 2d), and a common transparent electrode (5) is formed on the amorphous semiconductor film (4). This color image sensor allows color-separation in the subscanning direction to maximize the areas of pixel electrodes (2a - 2d).

6. 发明公开

EP3358625A1 IMAGING DEVICE 有权
公开(公告)号：EP3358625A1
公开(公告)日：2018-08-08
申请号：EP18154473.5
申请日：2018-01-31
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： TOKUHARA, Takeyoshi , SHISHIDO, Sanshiro , YANAGIDA, Masaaki
IPC分类号： H01L27/146 , H04N5/355
CPC分类号： H04N5/378 , H01L27/146 , H01L27/14612 , H01L27/14665 , H01L27/14667 , H01L27/307 , H01L51/0046 , H01L51/0061 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0078 , H04N5/35563
摘要： An imaging device of the present disclosure includes: a first and second imaging cells each including a photoelectric converter including a pixel electrode, a n opposite electrode, and a photoelectric conversion layer between the pixel electrode and the opposite electrode, the photoelectric converter generating signal charge by photoelectric conversion, and charge detection circuit connected to the pixel electrode, the charge detection circuit detecting the signal charge; and a voltage supply circuit supplying a voltage such that, in a frame period, a potential difference between the pixel electrode and the opposite electrode of the first imaging cell at a start time of a charge accumulation period of the first imaging cell is made different from a potential difference between the pixel electrode and the opposite electrode of the second imaging cell at a start time of a charge accumulation period of the second imaging cell.

7. 发明公开

EP2827369A4 SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC APPARATUS 审中-公开
标题翻译：固态图像记录设备及电子设备
公开(公告)号：EP2827369A4
公开(公告)日：2015-10-21
申请号：EP13761878
申请日：2013-02-27
申请人： SONY CORP
发明人： NAKAMURA AKIHIRO
IPC分类号： H01L27/146 , H01L27/14 , H01L31/10 , H04N5/369
CPC分类号： H01L27/307 , H01L27/1461 , H01L27/14623 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H01L27/14647 , H01L27/14667 , H04N5/361 , H04N5/369 , H04N9/07
摘要： A solid-state imaging device includes: a plurality of laminated photoelectric conversion sections; a reading section configured of a semiconductor region formed inside a semiconductor substrate and reading electric charge that has been subjected to photoelectric conversion in the photoelectric conversion sections; a charge accumulation section accumulating the electric charge read by the reading section; and a light shielding structure shielding, from light, a portion other than the reading section and the photoelectric conversion sections.

8. 发明公开

EP2388823A1 Solid-state imaging device and imaging apparatus 有权转让
标题翻译： Festkörperabbildungsvorrichtungund Abbildungsvorrichtung
公开(公告)号：EP2388823A1
公开(公告)日：2011-11-23
申请号：EP11166347.2
申请日：2011-05-17
申请人： Fujifilm Corporation
发明人： Goto, Takashi
IPC分类号： H01L27/30 , H01L27/146
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14647 , H01L27/14667 , H04N5/355 , H04N5/3698 , H04N5/374
摘要： A solid-state imaging device includes a photoelectric conversion layer (107), a MOS transistor circuit. The photoelectric conversion layer (107) is formed over a semiconductor substrate (101). The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer (107) and then collected, and that is formed in the semiconductor substrate (101), the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion (104,FD), a reset transistor (204), and an output transistor (205). The charge accumulation portion (104,FD) is electrically connected with the photoelectric conversion layer (107). The reset transistor (204) resets a potential of the charge accumulation portion (104,FD) to a reset potential (Vs). The output transistor (205) outputs a signal corresponding to the potential of the charge accumulation portion (104,FD). The reset transistor (204) and the output transistor (205) have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND
摘要翻译：固态成像装置包括光电转换层（107），MOS晶体管电路。光电转换层（107）形成在半导体衬底（101）上。 MOS晶体管电路读出与光电转换层（107）中产生的电荷对应的信号，然后在半导体衬底（101）中形成具有给定极性的电荷。 MOS晶体管电路包括电荷累积部分（104，FD），复位晶体管（204）和输出晶体管（205）。电荷累积部（104，FD）与光电转换层（107）电连接。复位晶体管（204）将电荷累积部分（104，FD）的电位复位到复位电位（Vs）。输出晶体管（205）输出与电荷累积部（104，FD）的电位对应的信号。复位晶体管（204）和输出晶体管（205）具有极性与给定极性相反的载流子。在MOS晶体管电路中，满足下式（1）：GND

9. 发明公开

EP1726045A4 QWIP WITH ENHANCED OPTICAL COUPLING 审中-公开
标题翻译： QWIP MIT ERWEITERTER OPTISCHER KOPPLUNG
公开(公告)号：EP1726045A4
公开(公告)日：2010-11-17
申请号：EP05764683
申请日：2005-02-03
申请人： BAE SYSTEMS INFORMATION
发明人： SUNDARAM MANI , REISINGER AXEL R
IPC分类号： H01L31/0352 , H01L27/00 , H01L27/146 , H01L31/0216 , H01L31/0232 , H01L31/0236 , H01L31/0304 , H01L31/0328 , H01L31/042 , H01L31/072 , H01L31/109
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/1462 , H01L27/14625 , H01L27/14647 , H01L27/14667 , H01L27/14689 , H01L31/02161 , H01L31/02327 , H01L31/03046 , Y02E10/544

10. 发明授权

EP3799122B1 SOLID-STATE IMAGE CAPTURE ELEMENT AND METHOD OF MANUFACTURING SAME 有权转让
公开(公告)号：EP3799122B1
公开(公告)日：2024-09-25
申请号：EP19807172.2
申请日：2019-04-19
IPC分类号： H01L27/146
CPC分类号： H01L29/423 , H01L29/786 , H01L23/522 , H01L21/3205 , H01L29/43 , H01L21/768 , H01L27/088 , H01L21/8234 , H01L29/49 , H01L27/14647 , H01L27/14638 , H01L27/14667 , H01L27/1464 , H01L27/14636 , H01L27/14616 , H04N25/76 , H10K39/32

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