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31. 发明授权

EP2835830B1 Night-vision sensor and apparatus 有权转让
公开(公告)号：EP2835830B1
公开(公告)日：2018-10-17
申请号：EP14191472.1
申请日：2010-08-31
申请人： Intevac, Inc.
发明人： Aebi, Verle W.
IPC分类号： H01L27/146 , H01L31/109 , H01L31/0304
CPC分类号： H01L27/14643 , H01L27/1464 , H01L31/0304 , H01L31/03046 , H01L31/109 , Y02E10/544
摘要： The invention relates to a sensor for night vision applications, comprising an InP substrate (500); an InP buffer layer (510) fabricated on one surface of the InP substrate; an InGaAsP absorption layer (515) fabricated on the InP buffer layer; an InP cap layer (525) formed over the absorption layer; wherein the InGaAsP absorption layer limits long wavelength response cutoff to between 1.25 to 1.4µm wavelength. The invention further relates to a night vision apparatus, comprising a sensor that limits long wavelength response cutoff to between 1.25 to 1.4µm wavelength and an imaging chip positioned behind and connected to the sensor and comprising an array having 1600 x 1200 pixels at a 10.8 micron pixel pitch and operating at 60Hz.

32. 发明公开

EP2529417A4 INFRARED EXTERNAL PHOTOEMISSIVE DETECTOR 审中-公开
标题翻译： EXTERNER INFRAROT-LICHTEMISSIONSDETEKTOR
公开(公告)号：EP2529417A4
公开(公告)日：2017-05-03
申请号：EP11737739
申请日：2011-01-28
申请人： HOWARD UNIV
发明人： BATES CLAYTON W JR
IPC分类号： H01L31/109 , H01J1/34 , H01J31/49 , H01L31/0352 , H01L31/09 , H01L31/108
CPC分类号： H01L31/035209 , H01J1/34 , H01J31/49 , H01L31/108
摘要： An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20-30 atomic percentage metal particles (such as silver) having an average particle size of about 5-10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 μm to 10 μm thick, and preferably about 3 μm thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.
摘要翻译：红外外部光发射检测器可以具有包括n型半导体层和p层的n-p异质结; 所述n层半导体包括嵌入有形成肖特基势垒的纳米颗粒的掺杂硅; 并且p层是p型金刚石膜。纳米颗粒可以是平均粒径为约5-10nm的约20-30个原子百分比金属颗粒（例如银）。 p层可以具有负电子亲和力的表面层。 n层可以在约3μm至10μm厚的范围内，并且优选地约3μm厚。掺杂的硅可以掺杂选自由磷和锑组成的列表中的元素。

33. 发明授权

EP1189289B1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：EP1189289B1
公开(公告)日：2015-09-16
申请号：EP00935563.7
申请日：2000-06-07
申请人： Nichia Corporation
发明人： TANIZAWA, Koji
IPC分类号： H01L33/00 , H01L31/072 , H01L31/109 , H01L29/68 , H01S5/343
CPC分类号： B82Y20/00 , H01L31/03042 , H01L31/03046 , H01L31/035236 , H01L31/0735 , H01L31/1852 , H01L33/025 , H01L33/06 , H01L33/32 , H01S5/305 , H01S5/3086 , H01S5/309 , H01S5/3407 , H01S5/34333 , Y02E10/544
摘要： An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride. semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1-xN (0 to 2 x 10 /cm .

34. 发明公开

EP2474034A4 LOW ENERGY PORTABLE LOW-LIGHT CAMERA WITH WAVELENGTH CUTOFF 有权转让
标题翻译： WITH WAVE长度限制便携式低 - 低和红灯摄影机
公开(公告)号：EP2474034A4
公开(公告)日：2014-02-26
申请号：EP10812779
申请日：2010-08-31
申请人： INTEVAC INC
发明人： AEBI VERLE W
IPC分类号： H01L27/146 , H01L31/0304 , H01L31/109
CPC分类号： H01L27/14643 , H01L27/1464 , H01L31/0304 , H01L31/03046 , H01L31/109 , Y02E10/544

35. 发明公开

EP2530723A3 Photovoltaic device comprising silicon microparticles 审中-公开
标题翻译：用硅树脂微粒的光伏装置
公开(公告)号：EP2530723A3
公开(公告)日：2014-01-15
申请号：EP12163317.6
申请日：2012-04-05
申请人： Sony Corporation
发明人： Ford, William , von Wrochem, Florian , Nelles, Gabriele
IPC分类号： H01L31/0328 , H01L31/0352 , H01L31/042 , H01L31/109 , H01L31/055 , H01L31/072 , H01L31/0745 , H01L31/0384
CPC分类号： H01L31/03529 , H01L31/0384 , H01L31/055 , H01L31/072 , H01L31/0745 , Y02E10/52
摘要： The present invention relates to a heterojunction photovoltaic device comprising silicon microparticles and to a method of producing the same. The photovoltaic device comprises a conductor layer with a workfunction which matches the Fermi Energy of the silicon microparticle; a semiconductor layer (e.g. CuI, CuSCN, Cu2O); an insulator layer (e.g. an organic film) sandwiched between said conductor layer and said semiconductor layer, and a silicon microparticle, wherein said silicon microparticle is partially embedded in said conductor layer and partially embedded in said insulator layer, and wherein said silicon microparticle is in contact with said semiconductor layer and said conductor layer, and wherein said semiconductor layer comprises a material which is not silicon.

36. 发明公开

EP2529417A2 INFRARED EXTERNAL PHOTOEMISSIVE DETECTOR 审中-公开
标题翻译：外部红外线分析仪
公开(公告)号：EP2529417A2
公开(公告)日：2012-12-05
申请号：EP11737739.0
申请日：2011-01-28
申请人： Howard University
发明人： BATES, Clayton W., Jr.
IPC分类号： H01L31/109 , H01L31/09
CPC分类号： H01L31/035209 , H01J1/34 , H01J31/49 , H01L31/108
摘要： An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20 - 30 atomic percentage metal particles (such as silver) having an average particle size of about 5 - 10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 µm to 10 µm thick, and preferably about 3 µm thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.
摘要翻译：红外外部发光检测器可以具有包括n型半导体层和p层的n-p异质结; 所述n层半导体包括掺杂有形成肖特基势垒的纳米颗粒的掺杂硅; p层是p型金刚石膜。纳米颗粒可以是平均粒径约5-10nm的约20-30原子百分比的金属颗粒（如银）。 p层可以具有具有负电子亲和力的表面层。 n层可以在约3μm至10μm厚的范围内，优选约3μm厚。掺杂的硅可掺杂有选自磷和锑的元素。

37. 发明公开

EP2482340A2 Multijunction laser light detector with multiple voltage device implementation 审中-公开
标题翻译：与实施与多种电压的装置的多连接的激光检测器
公开(公告)号：EP2482340A2
公开(公告)日：2012-08-01
申请号：EP12165821.5
申请日：2005-08-03
申请人： The Boeing Company
发明人： Krut, Dimitri , Sudharsanan, Rengarajan , Karam, Nasser, H. , King, Richard, R.
IPC分类号： H01L31/0687 , H01L31/0725 , H01L27/142 , H01L31/102 , H01L31/109 , G02B6/42 , H01L27/144
CPC分类号： H01L31/102 , H01L31/0687 , H01L31/0725 , H01L31/078 , H01L31/109 , Y02E10/544 , Y02P70/521
摘要： Laser power conversion with multiple stacked junctions or subcells are disclosed to produce increased output. Both vertical and horizontal integration are disclosed for flexible, efficient, and cost-effective laser power conversion. One embodiment of a laser power converter includes at least a first or top subcell that receives incident laser light, a second subcell below the first subcell that subsequently receives the laser light, and a tunnel junction between the first and second subcells.
摘要翻译：具有多个堆叠的结或子小区激光功率转换是游离缺失盘，以产生增加的输出。垂直和水平集成的光盘为游离缺失灵活，有效和具有成本效益的激光功率的转换。的激光功率转换器的一个实施例包括至少一个第一或顶部子电池做了接收入射光的激光，所述第一子电池做随后接收的激光下方的第二子电池，并且所述第一和第二子电池之间的隧道结。

38. 发明公开

EP2309556A3 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：EP2309556A3
公开(公告)日：2012-04-04
申请号：EP10195025.1
申请日：2000-06-07
申请人： Nichia Corporation
发明人： Tanizawa, Koji
IPC分类号： H01L33/06 , H01L31/072 , H01L31/109 , H01L29/68 , H01S5/343 , H01L33/32
CPC分类号： B82Y20/00 , H01L31/03042 , H01L31/03046 , H01L31/035236 , H01L31/0735 , H01L31/1852 , H01L33/025 , H01L33/06 , H01L33/32 , H01S5/305 , H01S5/3086 , H01S5/309 , H01S5/3407 , H01S5/34333 , Y02E10/544
摘要： An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1-xN (0 16 to 2 x 10 18 /cm 3
摘要翻译：一种用于改善较低工作电压或提高发射输出的氮化物半导体器件，包括一个有源层，该有源层包括一个或多个量子阱层以及在n型氮化物半导体层和p型氮化物半导体层之间的一个或多个阻挡层，其中所述量子层在所述有源层中包括具有450至540nm的峰值波长的In x Ga 1-x N（0

39. 发明公开

EP1595118A4 FOCAL PLANE ARRAYS IN TYPE-II SUPERLATTICES 审中-公开
标题翻译：超级冰柜中的FOKALEBENENGRUPPE II
公开(公告)号：EP1595118A4
公开(公告)日：2010-06-09
申请号：EP03817889
申请日：2003-08-01
申请人： MP TECHNOLOGIES LLC
发明人： RAZEGHI MANIJEDH
IPC分类号： G01J20060101 , G01J1/00 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/44 , H01L27/14 , H01L27/146 , H01L29/06 , H01L29/768 , H01L31/0304 , H01L31/0328 , H01L31/0352 , H01L31/06 , H01L33/00 , H01L31/0232 , H01L31/00 , H01L31/0336 , H01L31/109
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/1465 , H01L27/14687 , H01L31/0304 , H01L2224/16225 , H01L2224/81193 , H01L2924/351 , Y02E10/544

40. 发明公开

EP2012368A1 ULTRAVIOLET SENSOR 审中-公开
标题翻译： ULTRAVIOLETT-SENSOR
公开(公告)号：EP2012368A1
公开(公告)日：2009-01-07
申请号：EP06810088.2
申请日：2006-09-13
申请人： Murata Manufacturing Co. Ltd.
发明人： NAKAMURA, Kazutaka , ITO, Yoshihiro
IPC分类号： H01L31/109
CPC分类号： H01L31/109 , H01L31/022408 , H01L31/022416 , H01L31/0296 , H01L31/1828 , Y02E10/543
摘要： In a diode-type ultraviolet sensor having a laminate structure which forms a hetero junction, higher sensitivity is realized.
The ultraviolet sensor has a ZnO layer (2) composed of an oxide semiconductor including ZnO; a (Ni,Zn)O layer (3) which is provided in contact with the ZnO layer (2) and which is composed of an oxide semiconductor including NiO and ZnO solid-solved therein; a first terminal electrode (5) electrically connected to the ZnO layer (2), and a second terminal electrode (6) electrically connected to the (Ni,Zn)O layer (3), and the ZnO layer (2) is used to be disposed at an ultraviolet ray (7) receiving side. The (Ni,Zn)O layer (3) is preferably formed of a sintered body.
摘要翻译：在具有形成异质结的层叠结构的二极管型紫外线传感器中，实现了更高的灵敏度。紫外线传感器具有由包含ZnO的氧化物半导体构成的ZnO层（2）设置为与ZnO层（2）接触并由固溶于其中的NiO和ZnO的氧化物半导体构成的（Ni，Zn）O层（3）电连接到ZnO层（2）的第一端子电极（5）和与（Ni，Zn）O层（3）电连接的第二端子电极（6）和ZnO层（2）用于设置在紫外线（7）接收侧。（Ni，Zn）O层（3）优选由烧结体形成。

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