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    • 3. 发明公开
    • A dye including an anchoring group in its molecular structure
    • Farbstoff mit Verankerungsgruppe in der Molekularstruktur
    • EP2053618A1
    • 2009-04-29
    • EP07020925.9
    • 2007-10-25
    • Sony Corporation
    • Fuhrmann, GerdaNelles, GabrieleBamedi Zilai, AmenehYasuda, Akio
    • H01G9/20H01L51/00
    • H01G9/2059C09B47/00C09B57/007H01L51/0067H01L51/0086Y02E10/542
    • The present invention relates to a dye including an anchoring group in its structure, to a method of synthesis of such dye, to an electronic device comprising such dye, and to uses of such dye. Said anchoring group being represented by formula 1

      wherein attachment of said anchoring group within said molecular structure of said dye is at the terminal carbon marked with an asterisk in above formula, wherein
      G is selected from -COOH, -SO 3 H, -PO 3 H 2 , -BO 2 H 2 , -SH, -OH, -NH 2 , preferably -COOH, wherein A is selected from the group comprising H, -CN, -NO 2 , -COOR, -COSR, -COR-, -CSR, -NCS, -CF 3 , -CONR 2 , -OCF 3 , C 6 H 5-m F m , wherein m = 1 - 5,
      R being H or any straight or branched alkyl chain of general formula -C n H 2n+1 , n = 0 - 12, preferably 0-4, or any substituted or non-substituted phenyl or biphenyl.
    • 本发明涉及在其结构中包含锚定基团的染料,涉及这种染料的合成方法,涉及包含这种染料的电子器件,以及这种染料的用途。 所述锚定基团由式1表示,其中所述锚定基团在所述染料的分子结构内的连接在上式中带有星号的末端碳上,其中G选自-COOH,-SO 3 H,-PO 3 H 2,-BO 2 H 2,-SH,-OH,-NH 2,优选-COOH,其中A选自H,-CN,-NO 2,-COOR,-COSR,-COR-, -CSR,-NCS,-CF 3,-CONR 2,-OCF 3,C 6 H 5-m F m,其中m = 1-5,R为H或通式-C n的任何直链或支链烷基链 H 2n + 1,n = 0-12,优选0-4,或任何取代或未取代的苯基或联苯基。
    • 9. 发明公开
    • A method of preparing a porous semiconductor film on a substrate
    • Methode zur Herstellung einesporösenHalbleiterfilms auf einem Substrat
    • EP1933343A1
    • 2008-06-18
    • EP06025828.2
    • 2006-12-13
    • SONY DEUTSCHLAND GMBHSony Corporation
    • Dürr, MichaelNelles, GabrieleYasuda, AkioSuzuki, YusukeNoda, Kazuhiro
    • H01G9/20
    • H01G9/2095H01G9/2031H01G9/2059H01L51/003Y02E10/542
    • A method of preparing a porous semiconductor film on a substrate comprising the steps:
      a) preparing, on a first substrate, an adhesion layer capable of providing electrical and mechanical contact between a porous semiconductor layer attached to said adhesion Iayer arid said first substrate,
      b) applying on a second substrate that is capable of withstanding temperatures >=300°C a spacer Iayer and applying a porous semiconductor layer on said spacer layer,
      c) applying an assisting layer on said porous semiconductor Iayer, said assisting layer providing support for said porous semiconductor layer,
      d) removing said spacer layer
      e) transferring said porous semiconductor Iayer supported by said assisting layer onto said adhesion layer,
      f) pressing said porous semiconductor Iayer onto said adhesion layer,
      g) removing said assisting layer from said porous semiconductor Iayer, thereby obtaining said first substrate having as a porous semiconductor film said porous semiconductor layer attached thereon by way of said adhesion layer.
    • 一种在衬底上制备多孔半导体膜的方法,包括以下步骤:a)在第一衬底上制备能够在附着到所述第一衬底上的多孔半导体层和所述第一衬底之间提供电和机械接触的粘附层, )施加在能够承受> = 300℃的间隔层的温度的第二基板上,并且在所述间隔层上施加多孔半导体层,c)在所述多孔半导体层上施加辅助层,所述辅助层为所述 多孔半导体层,d)去除所述间隔层e)将由所述辅助层支撑的所述多孔半导体层,转移到所述粘合层上,f)将所述多孔半导体层进行加压到所述粘合层上,g)从所述多孔半导体层 从而获得具有附着有多孔半导体层的多孔半导体膜的所述第一基板 在此通过所述粘附层。