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31. 发明授权

EP1172865B1 Semiconductor photosensitive device 有权
标题翻译：光敏半导体器件
公开(公告)号：EP1172865B1
公开(公告)日：2014-12-03
申请号：EP01116841.6
申请日：2001-07-10
申请人： Sony Corporation
发明人： Fujisawa, Tomotaka, Sony Corporation , Arai, Chihiro, Sony Corporation
IPC分类号： H01L31/11 , H01L31/105 , H01L31/101
CPC分类号： H01L31/11

32. 发明公开

EP2768768A2 HOMOGENEOUS MULTIPLE BAND GAP DEVICES 审中-公开
标题翻译：与多个同类带隙DEVICES
公开(公告)号：EP2768768A2
公开(公告)日：2014-08-27
申请号：EP12784807.5
申请日：2012-10-19
申请人： University of Utah Research Foundation
发明人： LIU, Feng , SUN, Rujie , ZHANG, Ye
IPC分类号： B82Y20/00 , H01L31/07 , H01L31/09 , H01L31/108 , H01L33/06 , H01L33/08 , H01L31/028 , H01L31/0352 , H01L31/036 , H01L31/101
CPC分类号： H01L33/06 , B82Y20/00 , H01L31/032 , H01L31/035209 , H01L31/035236 , H01L31/07 , H01L31/1013 , H01L33/0041 , H01L33/08 , H01L33/40 , Y02E10/52
摘要： An electrical device comprising (A) a substrate having a surface and (B) a nanohole superlattice superimposed on a portion of the surface is provided. The nanohole superlattice comprises a plurality of sheets having an array of holes defined therein. The array of holes is characterized by a band gap or band gap range. The plurality of sheets forms a first edge and a second edge. A first lead comprising a first electrically conductive material forms a first junction with the first edge. A second lead comprising a second electrically conductive material forms a second junction with the second edge. The first junction is a Schottky barrier with respect to a carrier In some instances a metal protective coating covers all or a portion of a surface of the first lead. In some instances, the first lead comprises titanium, the second lead comprises palladium, and the metal protective coating comprises gold.

33. 发明公开

EP2546623A4 INFRARED SENSOR CHIP, INFRARED DETECTOR AND AN OPERATING METHOD AND TEST METHOD THEREFOR 审中-公开
标题翻译：红外线传感器芯片，红外探测器和工作程序及其测试方法
公开(公告)号：EP2546623A4
公开(公告)日：2014-07-23
申请号：EP12748373
申请日：2012-03-05
申请人： KOREA ADVANCED INST SCI & TECH
发明人： KIM HEE YEOUN , KIM KYOUNG MIN , KIM BYEONG IL , KYUNG KI MYEONG , PARK JAE HONG , LEE KWY RO , KIM GYUNG TAE
IPC分类号： G01J5/02 , G01J5/20 , H01L31/101
CPC分类号： G01J5/24 , G01J5/026 , G01J5/20 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2924/1305 , H01L2924/13055 , H01L2924/1461 , H01L2924/3011 , H01L2924/00014 , H01L2924/00

34. 发明公开

EP2684221A2 THREE DIMENSIONAL SENSORS, SYSTEMS, AND ASSOCIATED METHODS 审中-公开
标题翻译：三个传感器，系统和相关程序
公开(公告)号：EP2684221A2
公开(公告)日：2014-01-15
申请号：EP12754520.0
申请日：2012-03-12
申请人： Sionyx, Inc.
发明人： JIANG, Jutao , MCKEE, Jeffrey , HADDAD, Homayoon , HONG, Chris Sungkwon
IPC分类号： H01L31/101
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.

35. 发明公开

EP2680321A2 Quantum tunneling photodetector array 有权
标题翻译：量子Tunneleffekt-Photodetektoranordnung
公开(公告)号：EP2680321A2
公开(公告)日：2014-01-01
申请号：EP13184689.1
申请日：2007-12-18
申请人： Michalewicz, Marek T.
发明人： Michalewicz, Marek T.
IPC分类号： H01L31/101 , H04N5/30 , H01L51/42 , H01G9/20 , H01L31/11 , H01L27/146 , H01L27/144
CPC分类号： H01L27/146 , H01L27/1446 , H01L27/307
摘要： The invention relates to a quantum tunneling photodetector array comprising an array (100) of pairs of opposing first (102, 104) and second electrodes (106, 108); a photo-sensitive insulating material (308) disposed between the opposing first (102, 104) and second (106, 108) electrodes of the respective pairs; and an electrical circuit (110, 112) for detecting photo-assisted quantum tunneling currents between the opposing first (102, 104) and second (106, 108) electrode of the respective pairs. The invention is characterized in that the array (100) of opposing first (102, 104) and second electrodes (106, 108) are constituted as first and second sets of pixel electrodes respectively.
摘要翻译：本发明涉及一种量子隧穿光电检测器阵列，其包括一对相对的第一（102,104）和第二电极（106,108）的阵列（100）; 设置在各对的相对的第一（102,104）和第二（106,108）电极之间的感光绝缘材料（308）; 以及用于检测相应对的相对的第一（102,104）和第二（106,108）电极之间的光辅助量子隧穿电流的电路（110,112）。本发明的特征在于，相对的第一（102,104）和第二电极（106,108）的阵列（100）分别构成为第一和第二组像素电极。

36. 发明授权

EP2240955B1 ENGINEERING FLAT SURFACES ON MATERIALS DOPED VIA PULSED LASER IRRADIATION 有权
标题翻译：作者平坦部分上使用脉冲激光辐射掺杂材料的生产
公开(公告)号：EP2240955B1
公开(公告)日：2013-08-14
申请号：EP09707607.9
申请日：2009-02-02
申请人： President and Fellows of Harvard College
发明人： MAZUR, Eric , WINKLER, Mark
IPC分类号： H01L31/18 , H01L21/223 , H01L21/268 , H01L31/101 , H01L31/0288
CPC分类号： H01L21/223 , H01L21/268 , H01L31/0288 , H01L31/101 , Y02E10/50

37. 发明授权

EP2348537B1 Electro-optical demodulator based on buried photodiode 有权
标题翻译： Elekro光学解调器埋入光电二极管
公开(公告)号：EP2348537B1
公开(公告)日：2013-01-23
申请号：EP11151966.6
申请日：2011-01-25
申请人： Fondazione Bruno Kessler
发明人： Pancheri, Lucio , Stoppa, David , Massari, Nicola
IPC分类号： H01L31/02 , H01L31/101 , G01C3/00
CPC分类号： H01L31/101 , H01L31/02

38. 发明公开

EP2351085A2 PROCEDE DE FABRICATION DE CELLULES MATRICIELLES PHOTOSENSIBLES DANS L'INFRAROUGE COLLEES PAR ADHESION MOLECULAIRE SUR SUBSTRAT OPTIQUEMENT TRANSPARENT ET CAPTEUR ASSOCIE 审中-公开
标题翻译： METHOD FOR PRODUCING红外光敏感的矩阵单元BY分子粘附TO，在光学透明衬底均不，以及相关的传感器
公开(公告)号：EP2351085A2
公开(公告)日：2011-08-03
申请号：EP09797114.7
申请日：2009-11-27
申请人： Sagem Défense Sécurité
发明人： CORDAT, Arnaud , SIK, Hervé , DEMIGUEL, Stéphane
IPC分类号： H01L27/146 , H01L31/09 , H01L31/101 , H01L21/34 , H01L31/0352
CPC分类号： H01L27/1465 , H01L27/1469 , H01L27/14694 , H01L31/1032 , H01L31/1035 , H01L31/1892 , Y02E10/50
摘要： The invention relates to a method for producing an infrared radiation sensor, said sensor comprising an infrared photodiode array formed in a first material and a reading circuit formed in a second material, said method comprising the steps of: sticking, through molecular adhesion, a first material side surface (1) onto an optically transparent crystalline material side surface (5) having infrared radiation and a coefficient of thermal expansion similar to that of the second material, give or take 20%; thinning the body of the first material side surface so that the latter is less than 25 μm; producing infrared-sensitive photodiodes (9) onto the thus-thinned first material side surface; depositing contact ball bearings (11) onto the infrared photodiodes; and mounting the reading circuit (13) onto the first material side surface through flip chip technology.

39. 发明公开

EP2323177A1 Photodioden-Chip hoher Grenzfrequenz 审中-公开
公开(公告)号：EP2323177A1
公开(公告)日：2011-05-18
申请号：EP11075031.2
申请日：2006-10-18
申请人： Fraunhofer Gesellschaft zur Förderung der angewandten Wissenschaft E.V.
发明人： Bach, Heinz-Günter , Beling, Andreas
IPC分类号： H01L31/101 , H01L31/105 , H01L23/66
CPC分类号： H01L31/102 , H01L31/02005 , H01L31/105 , H01L31/1085 , H01L2924/0002 , H01L2924/00
摘要： Die Erfindung betrifft einen Photodioden-Chip hoher Grenzfrequenz mit einem Leitungsübergang vom aktiven Photodiodenbereich eines Photodioden-Mesas zum Ausgangs-Pad des Hochfrequenzausgangs des Photodioden-Chips.
Es bestand Bedarf, beim Bandbreitefaktor von Photodioden-Chips nach weiteren Steigerungen zu suchen.
Vorgeschlagen wird hierzu, dass die Verbindung vom Photodioden-Mesa zum Ausgangs-Pad mit einer hochohmigen Leitung mit über deren Länge verteilter Impedanz (Z leitung ) realisiert ist, die mindestens so hoch ist wie die am Ausgangs-Pad wirksame Lastimpedanz (Z last ). Die hochohmige Leitung besitzt eine Länge, die über das technologische Mindestmaß von etwa 30μm hinausgeht.
摘要翻译：具有高阈值频率的光电二极管芯片具有从光电二极管台面的有源光电二极管区域到光电二极管芯片的HF输出的输出焊盘的传导传输区域。光电二极管 - 台面与输出焊盘之间的连接是通过一个高阻抗导线/线路实现的，其阻抗（Z线）分布在其长度上，至少与有效负载阻抗（Z负载）一样高）在输出板。

40. 发明公开

EP1723399A4 QWIP WITH TUNABLE SPECTRAL RESPONSE 审中-公开
标题翻译： QWIP MIT ABSTIMMBARER SPEKTRALANTWORT
公开(公告)号：EP1723399A4
公开(公告)日：2010-11-17
申请号：EP05723186
申请日：2005-02-17
申请人： BAE SYSTEMS INFORMATION
发明人： SUNDARAM MANI , REISINGER AXEL R
IPC分类号： G01J5/00 , G01J3/28 , H01L27/146 , H01L29/06 , H01L31/0203 , H01L31/0216 , H01L31/0232 , H01L31/0304 , H01L31/0352 , H01L31/101
CPC分类号： G01J3/2803 , B82Y20/00 , H01L27/1465 , H01L27/14652 , H01L31/02161 , H01L31/02327 , H01L31/03046 , H01L31/035236 , H01L31/1013 , Y02E10/544

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