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31. 发明公开

EP1142832A1 Ionic additives for extreme low dielectric constant chemical formulations 有权
标题翻译： Ionische Additivefürchemischen Formulierungen mit besonders kleinerDielektrizitätskonstante
公开(公告)号：EP1142832A1
公开(公告)日：2001-10-10
申请号：EP01303192.7
申请日：2001-04-04
申请人： APPLIED MATERIALS, INC. , AIR PRODUCTS AND CHEMICALS, INC.
发明人： Mandal, Robert P. , Demos, Alexandros T. , Weidman, Timothy , Nault, Michael P. , Bekiaris, Nikolaos , Weigel, Scott Jeffrey , Senecal, Lee A. , MacDougall, James E. , Thridianam, Hareesh
IPC分类号： C01B33/16
CPC分类号： H01L21/02126 , C01B33/16 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10S438/96 , Y10T428/249953 , Y10T428/249969
摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH 3 ) 3 ] + A - , where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A - is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.
摘要翻译：使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法利用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂铵型盐在酸性前体溶液中。使用该前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的膜。在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂如四烷基铵盐和胺添加到原料前体溶液中来实现。在一些实施方案中，离子添加剂是选自一般组成为ΛNR（CH 3）3 OH - 的阳离子添加剂的化合物，其中R是链长为1至24的疏水性配体，包括四甲基铵和十六烷基三甲基铵，并且A 1是阴离子，其可以选自基本上由甲酸盐，硝酸盐，草酸盐，乙酸盐，磷酸盐，碳酸盐和氢氧化物组成的组以及它们的组合。在表面活性剂模板化的多孔氧化物前体制剂中加入四甲基铵盐或更一般的四烷基铵盐或四有机铵盐或有机胺，以增加离子含量，代替在表面活性剂纯化期间除去的碱离子杂质（钠和钾）以促进所形成的电介质的形成。

32. 发明公开

EP1136614A1 Method for forming a thin film 审中-公开
标题翻译： Verfahren zur Herstellung einerdünnenSchicht
公开(公告)号：EP1136614A1
公开(公告)日：2001-09-26
申请号：EP01106730.3
申请日：2001-03-16
申请人： TOKYO INSTITUTE OF TECHNOLOGY
发明人： Yoshimura, Masahiro , Fujiwara, Takeshi , Watanabe, Tomoaki , Teranishi, Ryo
IPC分类号： D06M11/53 , D06M23/02 , D06M23/16 , B44C1/04
CPC分类号： D21H19/00 , D06M11/53 , D06M23/16 , D21H17/70 , D21H23/50 , Y10S438/96
摘要： A water solution of lead nitrate is infiltrated into a substrate made of a porous material, and liquid drops of a water solution of sodium sulfide, which is charged into a ink cartridge of a minute nozzle, are sprayed onto the substrate from the minute nozzle. The lead component from the lead nitrate water solution and the sulfur component from the sodium sulfide water solution are synthesized directly on the substrate, and thus, a thin film made of lead sulfide is formed on the substrate.
摘要翻译：将硝酸铅的水溶液渗透到由多孔材料制成的基材中，并将装入微小喷嘴的墨盒中的硫化钠水溶液的液滴从微小喷嘴喷射到基材上。来自硝酸铅水溶液的铅成分和来自硫化钠水溶液的硫成分直接在基板上合成，因此在基板上形成由硫化铅构成的薄膜。

33. 发明授权

EP0584777B1 Semiconductor device and process for producing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：EP0584777B1
公开(公告)日：2000-11-08
申请号：EP93113472.0
申请日：1993-08-24
申请人： CANON KABUSHIKI KAISHA
发明人： Kumomi, Hideya , Yonehara, Takao , Sato, Nobuhiko
IPC分类号： H01L33/00 , H01L21/306
CPC分类号： H01L33/346 , G01N27/12 , H01L21/306 , Y10S438/96

34. 发明公开

EP0987743A4 SEMICONDUCTOR DEVICE AND METHOD OF ANODIZATION FOR THE SEMICONDUCTOR DEVICE 失效
标题翻译： HALBLEITERANORDNUNG UND ANODISIERUNGSVERFAHRENFÜRDERSELBEN
公开(公告)号：EP0987743A4
公开(公告)日：2000-07-19
申请号：EP98923150
申请日：1998-06-05
申请人： TOKAI RIKA CO LTD
发明人： IWATA HITOSHI , MURATE MAKOTO
IPC分类号： B81C1/00 , G01P15/08 , H01L21/306 , H01L21/3063 , H01L21/316 , C25F3/12 , G01L9/00 , H01L29/84
CPC分类号： H01L21/02203 , G01P15/0802 , H01L21/02238 , H01L21/02258 , H01L21/306 , H01L21/3063 , H01L21/31675 , Y10S438/96 , Y10S438/962
摘要： A p-type silicon layer (3) is formed as a buried layer in a p-type single crystal silicon substrate (2), and an n-type silicon layer (4) is formed on the upper side of the silicon substrate (2). A p-type silicon layer (5) for forming an opening is defined in the n-type silicon layer (4), and a metal protecting film (14) is formed on the upper side of the n-type silicon layer (4). An electrode layer (18) is formed on the rear side of the silicon substrate (2) via an oxide film (17). The electrode layer (18) and the silicon substrate (2) are electrically connected to each other via a connecting opening (17a) at portions aligned with the p-type silicon layer (3). After a positive terminal and a negative terminal of a DC power source (V) are connected to the electrode layer (18) and to a counter electrode (11) respectively, a voltage is applied between the electrode layer (18) and the counter electrode (11) to carry out anodization.
摘要翻译：在p型单晶硅衬底（2）中形成p型硅层（3）作为掩埋层，在硅衬底（2）的上侧形成n型硅层（4））。在n型硅层（4）中限定用于形成开口的p型硅层（5），在n型硅层（4）的上侧形成金属保护膜（14）。通过氧化膜（17）在硅衬底（2）的后侧形成电极层（18）。电极层（18）和硅衬底（2）在与p型硅层（3）对准的部分处经由连接开口（17a）彼此电连接。在直流电源（V）的正极端子和负极端子分别连接到电极层（18）和相对电极（11）之间，在电极层（18）和对电极（11）进行阳极氧化处理。

35. 发明授权

EP0747686B1 Forming a silicon diaphragm in a cavity by anodizing, oxidizing, and etching 失效
标题翻译：在通过阳极氧化处理，氧化和蚀刻的空腔形成硅膜
公开(公告)号：EP0747686B1
公开(公告)日：1999-04-14
申请号：EP96401129.0
申请日：1996-05-24
申请人： SSI TECHNOLOGIES, INC.
发明人： Seefeldt, James D. , Mattes, Michael F.
IPC分类号： G01L9/00 , G01P15/08 , H01L29/84
CPC分类号： B81C1/00158 , B81B2203/0315 , B81C2201/0115 , B81C2201/0178 , G01L9/0042 , G01L9/0055 , G01P15/0802 , G01P15/123 , Y10S438/96

36. 发明公开

EP0843345A3 Method of manufacturing a semiconductor article 失效
标题翻译：制造半导体产品的方法
公开(公告)号：EP0843345A3
公开(公告)日：1998-07-08
申请号：EP97309195.2
申请日：1997-11-14
申请人： CANON KABUSHIKI KAISHA
发明人： Sakaguchi, Kiyofumi , Yonehara, Takao
IPC分类号： H01L21/20
CPC分类号： H01L21/76259 , H01L2924/0002 , Y10S438/928 , Y10S438/96 , Y10S438/977 , H01L2924/00
摘要： A method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type, forming a porous silicon layer in a region including the diffusion region, preparing a first substrate by forming a nonporous semiconductor layer on the porous silicon layer, bonding the first substrate and a second substrate together to produce a multilayer structure with the nonporous semiconductor layer located inside, splitting the multilayer structure along the porous silicon layer but not along the diffusion region and removing the porous silicon layer remaining on the split second substrate.
摘要翻译：一种制造半导体产品的方法包括以下步骤：通过扩散能够控制导电类型的元素，至少在硅衬底的一个侧面的表面上形成扩散区，在包括扩散的区域中形成多孔硅层通过在多孔硅层上形成无孔半导体层来制备第一衬底，将第一衬底和第二衬底键合在一起以产生多孔结构，其中无孔半导体层位于内部，将多层结构沿着多孔硅层分开但是不沿着扩散区域并去除残留在分离的第二基板上的多孔硅层。

37. 发明公开

EP0843345A2 Method of manufacturing a semiconductor article 失效
公开(公告)号：EP0843345A2
公开(公告)日：1998-05-20
申请号：EP97309195.2
申请日：1997-11-14
申请人： CANON KABUSHIKI KAISHA
发明人： Sakaguchi, Kiyofumi , Yonehara, Takao
IPC分类号： H01L21/20
CPC分类号： H01L21/76259 , H01L2924/0002 , Y10S438/928 , Y10S438/96 , Y10S438/977 , H01L2924/00
摘要： A method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type, forming a porous silicon layer in a region including the diffusion region, preparing a first substrate by forming a nonporous semiconductor layer on the porous silicon layer, bonding the first substrate and a second substrate together to produce a multilayer structure with the nonporous semiconductor layer located inside, splitting the multilayer structure along the porous silicon layer but not along the diffusion region and removing the porous silicon layer remaining on the split second substrate.

38. 发明授权

EP0588296B1 Verfahren zur Herstellung eines Bauelementes mit porösem Silizium 失效
标题翻译：一种用于生产具有多孔硅的部件的方法，
公开(公告)号：EP0588296B1
公开(公告)日：1996-11-27
申请号：EP93114741.7
申请日：1993-09-14
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Stengl, Reinhard, Dr. , Hönlein, Wolfgang, Dr. , Lehmann, Volker, Dr. , Spitzer, Andreas, Dr.
IPC分类号： H01L21/306 , H01L33/00
CPC分类号： H01L33/346 , H01L21/306 , H01L31/1105 , Y10S438/96

39. 发明公开

EP0709900A2 Porous silicon trench and capacitor structures 失效
标题翻译：多孔硅的沟槽和电容器结构
公开(公告)号：EP0709900A2
公开(公告)日：1996-05-01
申请号：EP95480154.4
申请日：1995-10-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Kenney, Donald M. , Geiss, Peter J.
IPC分类号： H01L29/94
CPC分类号： H01L27/10861 , H01L28/82 , H01L29/66181 , H01L29/945 , Y10S438/96 , Y10S977/721 , Y10S977/888 , Y10S977/899
摘要： The invention provides a capacitor structure utilizing porous silicon as a first plate of the capacitor structure, thereby greatly increasing the surface area available for the capacitor and thereby the capacitance attainable. The invention also provides a trench structure having a porous silicon region surrounding the sidewalls thereof. Such a trench can then be utilized to form a capacitor according to the subject invention. Methods of producing the capacitor and trench structures according to the subject invention are also provided. Porous silicon is produced utilizing electrolytic anodic etching.

40. 发明公开

EP0515181A2 Method for preparing semiconductor member 失效
标题翻译：韦尔法罕zur Herstellung einesHalbleiterkörpers。
公开(公告)号：EP0515181A2
公开(公告)日：1992-11-25
申请号：EP92304605.6
申请日：1992-05-21
申请人： CANON KABUSHIKI KAISHA
发明人： Sakaguchi, Kiyofumi, c/o Canon Kabushiki Kaisha , Yonehara, Takao, c/o Canon Kabushiki Kaisha
IPC分类号： H01L21/20 , H01L21/76
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/02381 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/2007 , H01L21/76245 , H01L21/76251 , Y10S438/96 , Y10S438/977
摘要： A method for preparing a semiconductor member comprises process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on the porous Si substrate; primary bonding process of bonding the porous Si substrate and an insulating substrate via the non-porous Si monocrystalline layer; etching process of etching the porous Si to remove the porous Si by chemical etching after the primary bonding process; and secondary bonding process of strengthening the primary bonding after the etching process.
摘要翻译：制备半导体部件的方法包括制造多孔Si衬底，然后在多孔Si衬底上形成无孔Si单晶层的工艺; 通过无孔Si单晶层将多孔Si衬底和绝缘衬底接合的主要结合工艺; 蚀刻多孔Si的蚀刻工艺，以在初次粘合工艺之后通过化学蚀刻去除多孔Si; 以及在蚀刻工艺之后加强主要结合的二次接合工艺。

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