专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明公开

EP0928032A3 Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus 审中-公开
标题翻译： Halbleitersubstrat，Dünnschicht-Halbleiterbauelement，Verfahren zur Herstellung und Anodisierungsapparat
公开(公告)号：EP0928032A3
公开(公告)日：1999-09-08
申请号：EP98124609.3
申请日：1998-12-23
申请人： SONY CORPORATION
发明人： Matsushita, Takeshi c/o Sony Corporation , Kusunoki, Misao c/o Sony Corporation , Tatsumi, Takaaki c/o Sony Corporation
IPC分类号： H01L31/18 , H01L21/20 , H01L33/00
CPC分类号： H01L31/184 , H01L21/2007 , H01L21/7624 , H01L21/76259 , H01L31/1804 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S438/96 , Y10S438/977
摘要： A semiconductor substrate, a thin film semiconductor device, a manufacturing method thereof and an anodizing apparatus which can reduce the manufacturing cost and save the resources are provided. According to this invention, a semiconductor thin film is formed through a separation layer of a porous semiconductor on a substrate body of sapphire; the semiconductor thin film is separated from the porosity layer and used for a thin film semiconductor device; and the substrate body from which the semiconductor thin film is separated is used again after the separation layer attached thereto is removed by etching. Since sapphire has high strength, high rigidity, high resistance to wearing, high heat resistance, high abrasion resistance and high chemicals resistance, no deterioration and no damage occur even when the substrate body is repetitively used. Thus, the recycle frequency can be increased, and the reduction of the manufacturing cost and the saving of the resources can be promoted.
摘要翻译：提供了可以降低制造成本并节省资源的半导体衬底，薄膜半导体器件，其制造方法和阳极氧化装置。根据本发明，通过蓝宝石衬底主体上的多孔半导体的分离层形成半导体薄膜; 半导体薄膜与孔隙层分离并用于薄膜半导体器件; 并且在通过蚀刻去除附着于其上的分离层之后，再次使用分离有半导体薄膜的基板体。由于蓝宝石具有高强度，高刚性，高耐磨性，高耐热性，高耐磨性和高耐化学性，因此即使重复使用基板体也不会发生劣化和不损坏。因此，可以提高再循环频率，可以促进制造成本的降低和资源的节省。

32. 发明公开

EP0924822A2 Vertical cavity surface emitting semiconductor lasers and their method of fabrication 有权
标题翻译： Herstellungsverfahren einesoberflächenemittierendenHalbleiterlasers mit vertikalem Resonator
公开(公告)号：EP0924822A2
公开(公告)日：1999-06-23
申请号：EP98308682.8
申请日：1998-10-23
申请人： Xerox Corporation
发明人： Sun, Decai , Floyd, Philip D.
IPC分类号： H01S3/085
CPC分类号： H01S5/18311 , H01S5/18308 , H01S5/18338 , H01S5/18355 , H01S5/2068 , H01S5/3063 , Y10S438/96
摘要： The present invention relates to a vertical cavity surface emitting laser with an accurately defined and controlled aperture (134) which directs the current path within the laser. Specifically, the oxide regions (106) surrounding the aperture are formed by a pre-oxidation layer disordering process which controls the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.
摘要翻译：本发明涉及一种垂直腔表面发射激光器，其具有精确限定和受控的孔径（134），其引导激光器内的电流路径。具体地，围绕孔的氧化物区域（106）通过预氧化层无序化处理形成，该预氧化层无序化处理控制可发生氧化的区域。本发明允许制造具有可再现的光学和电学特性的高度紧凑的激光器。

33. 发明公开

EP0867923A2 Thin film forming process 失效
标题翻译： Verfahren zur Trennung einer Schicht
公开(公告)号：EP0867923A2
公开(公告)日：1998-09-30
申请号：EP98302218.7
申请日：1998-03-24
申请人： CANON KABUSHIKI KAISHA
发明人： Iwane, Masaaki , Yonehara, Takao , Ohmi, Kazuaki
IPC分类号： H01L21/304 , H01L21/20 , B26F3/12 , H01L31/18
CPC分类号： B32B43/00 , H01L21/2007 , H01L21/76259 , Y10S438/96 , Y10S438/974 , Y10S438/977
摘要： A process for producing an SOI substrate is disclosed which is useful for saving resources and lowering production cost. Further, a process for producing a photoelectric conversion device such as a solar cell is disclosed which can successfully separate a substrate by a porous Si layer, does not require a strong adhesion between a substrate and a jig, and can save resources and lower production cost. In a substrate having a porous layer on a nonporous layer and further having on the porous layer a layer small in porosity, the nonporous layer and the layer small in porosity are separated by the porous layer to form a thin film. A metal wire is wound around a side surface of the substrate, and a current is made to flow into the metal wire to generate a heat from the metal wire and transfer the heat preferentially to the porous layer, thus conducting the separation. The separated substrate is used for producing an SOI substrate and the separated nonporous Si layer is reutilized in a process of producing an SOI substrate.
摘要翻译：公开了一种用于制造SOI衬底的方法，其用于节省资源并降低生产成本。此外，公开了一种太阳能电池的光电转换装置的制造方法，其可以通过多孔Si层成功地分离基板，不需要基板和夹具之间的强粘合性，并且可以节省资源并降低生产成本。在无孔层上具有多孔层的基板中，在多孔层上还具有孔隙小的层，无孔层和孔隙小的层被多孔层分离以形成薄膜。金属线缠绕在基板的侧面上，使电流流入金属线，从金属线产生热量，并将热量优先传递给多孔层，进行分离。分离的衬底用于制造SOI衬底，并且在制造SOI衬底的工艺中分离的无孔Si层被再利用。

34. 发明公开

EP0757377A3 Semiconductor substrate and fabrication method for the same 失效
标题翻译：半导体衬底及其制造方法
公开(公告)号：EP0757377A3
公开(公告)日：1998-01-07
申请号：EP96305661.9
申请日：1996-07-31
申请人： CANON KABUSHIKI KAISHA
发明人： Sakaguchi, Kiyofumi , Yonehara, Takao
IPC分类号： H01L21/20
CPC分类号： H01L21/76256 , Y10S438/96
摘要： A method for fabricating a semiconductor substrate comprises the steps of employing a diffusion method to diffuse, in a silicon substrate, an element, which is capable of controlling a conductive type, and to form a diffused region, forming a porous layer in the diffused region, forming a non-porous single crystal layer on the porous layer, bonding the non-porous single crystal layer to a base substrate, while an insulation layer is provided either on a surface to be bonded of the non-porous single crystal layer or on a surface to be bonded of the base substrate, and removing the porous layer.

35. 发明公开

EP0553860A3 Semiconductor substrate and process for preparing the same 失效
标题翻译：半导体衬底及其制备方法
公开(公告)号：EP0553860A3
公开(公告)日：1997-09-10
申请号：EP93101421.1
申请日：1993-01-29
申请人： CANON KABUSHIKI KAISHA
发明人： Yonehara, Takao, c/o Canon Kabushiki Kaisha , Yamagata, Kenji, c/o Canon Kabushiki Kaisha
IPC分类号： H01L21/20
CPC分类号： H01L21/30604 , H01L21/76251 , H01L21/76256 , Y10S148/012 , Y10S438/96
摘要： A process for preparing a semiconductor substrate comprises bringing a first substrate provided with at least one of boron and phosphorus on the surface of an insulating layer formed on the surface of the substrate in contact with a second substrate, and integrating both of the substrates by a heat treatment.
摘要翻译：制备半导体衬底的方法包括：在与第二衬底接触的基板的表面上形成的绝缘层的表面上形成具有硼和磷中的至少一种的第一衬底，并且通过一个热处理。

36. 发明公开

EP0709900A3 Porous silicon trench and capacitor structures 失效
标题翻译：多孔硅沟槽和电容器结构
公开(公告)号：EP0709900A3
公开(公告)日：1996-08-07
申请号：EP95480154.4
申请日：1995-10-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Kenney, Donald M. , Geiss, Peter J.
IPC分类号： H01L29/94
CPC分类号： H01L27/10861 , H01L28/82 , H01L29/66181 , H01L29/945 , Y10S438/96 , Y10S977/721 , Y10S977/888 , Y10S977/899
摘要： The invention provides a capacitor structure utilizing porous silicon as a first plate of the capacitor structure, thereby greatly increasing the surface area available for the capacitor and thereby the capacitance attainable. The invention also provides a trench structure having a porous silicon region surrounding the sidewalls thereof. Such a trench can then be utilized to form a capacitor according to the subject invention. Methods of producing the capacitor and trench structures according to the subject invention are also provided. Porous silicon is produced utilizing electrolytic anodic etching.
摘要翻译：本发明提供了一种利用多孔硅作为电容器结构的第一极板的电容器结构，由此极大地增加了电容器可用的表面积并由此可以获得电容。本发明还提供了一种具有围绕其侧壁的多孔硅区域的沟槽结构。然后可以利用这种沟槽来形成根据本发明的电容器。还提供了制造根据本发明的电容器和沟槽结构的方法。利用电解阳极蚀刻生产多孔硅。

37. 发明授权

EP0504170B1 METHOD OF MAKING SILICON QUANTUM WIRES 失效
标题翻译：方法量子领导者。
公开(公告)号：EP0504170B1
公开(公告)日：1995-07-12
申请号：EP90917418.7
申请日：1990-12-06
申请人： SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOV. OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND
发明人： CANHAM, Leigh-Trevor , KEEN, John, Michael , LEONG, Weng, Yee
IPC分类号： H01L21/306 , H01L29/76
CPC分类号： H01L33/346 , B82Y10/00 , H01L21/306 , Y10S438/96 , Y10S438/962
摘要： A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in 20 % aqueous hydrofluoric acid to produce a layer (5) microns thick with 70 % porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80 % or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6 - 2.0 eV) of the visible spectrum.

38. 发明公开

EP0598755A1 VERFAHREN ZUM HERSTELLEN VON ELEKTROLUMINESZENTEN SILIZIUMSTRUKTUREN 失效
标题翻译：的生产方法电硅结构。
公开(公告)号：EP0598755A1
公开(公告)日：1994-06-01
申请号：EP92915971.0
申请日：1992-07-20
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
发明人： RICHTER, Axel, Dr.-Ing. , STEINER, Peter , LANG, Walter, Dr.-Ing.
IPC分类号： H01L21 , H01L33
CPC分类号： H01L33/42 , H01L21/306 , H01L33/0054 , H01L33/346 , H01L2924/0002 , Y10S438/96 , H01L2924/00
摘要： On décrit un procédé pour la fabrication de structures électroluminescentes en silicium qui comprend les opérations suivantes: immersion d'une pastille de silicium dans un bain acide; anodisation de la pastille de silicium dans le bain acide; éclairage de la pastille de silicium sur sa face anodique pendant une partie au moins du temps pendant lequel elle est immergée dans le bain acide et anodisée, opération par laquelle le silicium monocristallin de la pastille de silicium est transformé, dans certaines zones au moins, en une couche microporeuse de silicium; création de deux contacts (13, 14) au moyen desquels une tension peut être appliquée à la couche microporeuse de silicium (10).

39. 发明公开

EP0553857A2 Semiconductor substrate and process for preparing the same 失效
标题翻译：半导体衬底及其制备方法
公开(公告)号：EP0553857A2
公开(公告)日：1993-08-04
申请号：EP93101418.7
申请日：1993-01-29
申请人： CANON KABUSHIKI KAISHA
发明人： Yamagata, Kenji, c/o Canon Kabushiki Kaisha , Yonehara, Takao, c/o Canon Kabushiki Kaisha
IPC分类号： H01L21/76 , H01L21/20
CPC分类号： H01L21/30604 , H01L21/76251 , H01L21/76256 , H01L2221/68363 , Y10S438/96 , Y10S438/977 , Y10T428/249953 , Y10T428/249967
摘要： A process for preparing a semiconductor substrate comprises a step of porousifying a silicon monocrystalline substrate to form a porous layer, a step of making a silicon monocrystalline thin film to epitaxially grow on a surface of the porous layer, a step of oxidizing the surface of the epitaxial growth layer, a step of forming a deposited film on the oxidized surface, thereby obtainig a first substrate, a step of closely contacting the deposited film of the first substrate to a second substrate, a step of heat treating the closely contacted substrates and a step of selectively etching the porous layer.
摘要翻译：制备半导体衬底的方法包括以下步骤：使硅单晶衬底多孔化以形成多孔层;在多孔层的表面上使硅单晶薄膜外延生长的步骤;将氧化外延生长层，在氧化表面上形成沉积膜的步骤，由此获得第一衬底，使第一衬底的沉积膜与第二衬底紧密接触的步骤，热处理紧密接触的衬底和步骤选择性地蚀刻多孔层的步骤。

40. 发明公开

EP0530972A3 Liquid crystal image display unit 失效
标题翻译：液晶图像显示单元及制造半导体光学元件的方法
公开(公告)号：EP0530972A3
公开(公告)日：1993-06-30
申请号：EP92307010.6
申请日：1992-07-31
申请人： CANON KABUSHIKI KAISHA
发明人： Yonehara, Takao, c/o Canon Kabushiki Kaisha , Miyawaki, Mamoru, c/o Canon Kabushiki Kaisha , Ishizaki, Akira, c/o Canon Kabushiki Kaisha , Hoshi, Junichi, c/o Canon Kabushiki Kaisha , Sakamoto, Masaru, c/o Canon Kabushiki Kaisha , Sugawa, Shigetoshi, c/o Canon Kabushiki Kaisha , Inoue, Shunsuke, c/o Canon Kabushiki Kaisha , Koizumi, Toru, c/o Canon Kabushiki Kaisha , Kohchi, Tetsunobu, c/o Canon Kabushiki Kaisha , Sakaguchi, Kiyofumi, c/o Canon Kabushiki Kaisha , Watanabe, Takanori, c/o Canon Kabushiki Kaisha
IPC分类号： G02F1/136 , H01L21/72
CPC分类号： G02F1/13454 , G02F2001/136281 , G02F2202/105 , H01L27/12 , H01L27/1203 , H01L27/1233 , Y10S438/96
摘要： A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式