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    • 33. 发明公开
    • Array Substrate, Method for Manufacturing the same, and Display Device
    • 阵列Substrat,Verfahren zur Herstellung davon und Anzeigevorrichtung
    • EP2744012A1
    • 2014-06-18
    • EP13196859.6
    • 2013-12-12
    • Boe Technology Group Co. Ltd.
    • Song, YoungsukYoo, SeongyeolChoi, SeungjinKim, Heecheol
    • H01L51/52H01L27/32
    • H01L51/52H01L27/3206H01L27/322H01L51/5262H01L51/5265H01L51/5271H01L2227/323
    • Embodiments of the present invention disclose an array substrate comprising a base substrate (1) and a plurality of pixel units disposed on the base substrate, the pixel unit comprising a transflective layer (8) formed on the base substrate; a thin film transistor structure formed over the transflective layer; an organic light-emitting diode disposed in a pixel region (A)of the pixel unit and driven by the thin film transistor structure, and in a direction away from the base substrate, the organic light-emitting diode sequentially comprising a first electrode (11) that is transparent, an organic light-emitting layer (13) and a second electrode (14) for reflecting light; and a color filter (9), disposed between the second electrode (14) of the organic light-emitting diode and the transflective layer (8); wherein the second electrode of the organic light-emitting diode and the transflective layer constitute a microcavity structure. Embodiments of the present invention also disclose a method for manufacturing the array substrate and a display device including the above array substrate.
    • 本发明的实施例公开了一种阵列基板,包括基底(1)和设置在基底基板上的多个像素单元,所述像素单元包括形成在基底基板上的透反射层(8) 形成在透反射层上的薄膜晶体管结构; 设置在像素单元的像素区域(A)中并由薄膜晶体管结构驱动的有机发光二极管,并且在远离基板的方向上,有机发光二极管依次包括第一电极(11) ),用于反射光的有机发光层(13)和第二电极(14); 和布置在有机发光二极管的第二电极(14)和透反射层(8)之间的滤色器(9)。 其中所述有机发光二极管的第二电极和所述半透反射层构成微腔结构。 本发明的实施例还公开了一种用于制造阵列基板的方法和包括上述阵列基板的显示装置。
    • 36. 发明公开
    • ORGANIC ELECTROLUMINESCENT DEVICE.
    • 有机电致发光器件。
    • EP2630679A1
    • 2013-08-28
    • EP11773901.1
    • 2011-10-05
    • Koninklijke Philips Electronics N.V.Philips Intellectual Property & Standards GmbH
    • BOERNER, Herbert FriedrichHUMMEL, HelgaGOLDMANN, Claudia
    • H01L51/52
    • H05B33/12H01L51/5231H01L51/5271H05B33/10
    • The invention provides an OLED device with improved light out-coupling, which can be manufactured easy and reliable at low costs, which comprises an electroluminescent layer stack (2, 3, 4) on top of a substrate (1), where the electroluminescent layer stack (2, 3, 4) comprises an organic light-emitting layer stack (3) with one or more organic layers sandwiched between a first electrode (2) facing towards the substrate (1) and a 10 second electrode (4), where the second electrode (4) comprises a layer stack of at least a transparent conductive protection layer (41) on top of the organic light-emitting layer stack (3), a transparent organic conductive buckling layer (42) on top of the protection layer (41) having a glass transition temperature lower than the lowest glass transition temperature of the organic layers within the organic light-emitting layer stack (3) and a stress inducing layer 15 (43) on top of the buckling layer (42) to introduce stress to the buckling layer (42). The invention further relates to a method to manufacture such OLED devices with heating the electroluminescent layer (2, 3, 4) stack to a temperature, which is above the glass transition temperature of the buckling layer (42) and below the lowest glass transition temperature of the organic layers within the organic light-emitting layer stack (3) for a time period sufficient 20 to obtain buckles (B) within the buckling layer (42).
    • 本发明提供了一种具有改进的光输出耦合的OLED器件,其可以以低成本容易且可靠地制造,其包括位于衬底(1)顶部上的电致发光层堆叠(2,3,4),其中电致发光层 叠层(2,3,4)包括具有夹在面向衬底(1)的第一电极(2)和第二电极(4)之间的一个或多个有机层的有机发光层叠层(3),其中 所述第二电极(4)包括在所述有机发光层堆叠(3)的顶部上的至少一个透明导电保护层(41)的层堆叠,在所述保护层的顶部上的透明有机导电弯曲层(42) (41),其具有比有机发光层叠层(3)内的有机层的最低玻璃化转变温度低的玻璃化转变温度和位于屈曲层(42)的顶部上的应力诱导层15(43)以引入 应力至屈曲层(42)。 本发明进一步涉及制造这种OLED器件的方法,其中将电致发光层(2,3,4)堆叠到高于压曲层(42)的玻璃化转变温度且低于最低玻璃化转变温度 的有机层在有机发光层叠层(3)内充分接触足够长的时间以获得屈曲层(42)内的带扣(B)。
    • 37. 发明公开
    • Opto-electric device and method for manufacturing the same
    • Optoelektrische Vorrichtung und Verfahren zu deren Herstellung
    • EP2629347A1
    • 2013-08-21
    • EP12155869.6
    • 2012-02-17
    • Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO
    • van den Brand, JeroenWilson, Joanne Sarahvan Mol, Antonius Maria BernardusHermes, Dorothee ChristineYoung, Edward Willem Albert
    • H01L51/52
    • H01L51/5256H01L33/62H01L51/5203H01L51/5212H01L51/5228H01L51/5234H01L51/5271H01L51/56
    • The opto-electric device (10) comprises an opto-electric layer structure (20) having an anode and a cathode layer (22, 24 resp.) as well as a opto-electric layer (26) arranged between said anode and cathode layers, and having a light-transmission side (28), the cathode layer of said anode and cathode layer being closest to said light-transmission side. A dual electrically conductive layer structure is (40) arranged at a side of said opto-electric layer structure opposite the light-transmission side, the dual electrically conductive layer structure having a first and a second electrically conductive layer (42, 44 resp.) mutually insulated by a first electrically insulating layer (46), the first electrically conductive layer of said first and second electrically conductive layer being closest to the opto-electric layer structure. A second electrically insulating layer (50) is arranged between the light emitting layer structure (20) and the dual electrically conductive layer structure (40), wherein the first electrically conductive layer (42) is electrically connected by at least a first transverse electrical conductor (62) through said second insulating layer with said anode layer (22) and said second electrically conductive layer (44) is electrically connected by at least a second transverse electrical conductor (64) through said first electrically insulating layer (46), said first electrically conductive layer (42), said second electrically insulating layer (50), said anode electrode layer (22) and said light emitting layer (26), with said cathode layer (24).
    • 光电装置(10)包括具有阳极和阴极层(22,24)的光电层结构(20)以及布置在所述阳极层和阴极层之间的光电层(26) ,并具有光透射侧(28),所述阳极和阴极层的阴极层最靠近所述光透射侧。 双重导电层结构(40)布置在所述光电层结构的与光透射侧相对的一侧,所述双重导电层结构具有第一和第二导电层(42,44) 由第一电绝缘层(46)互相绝缘,所述第一和第二导电层的第一导电层最靠近光电层结构。 第二电绝缘层(50)布置在发光层结构(20)和双重导电层结构(40)之间,其中第一导电层(42)通过至少第一横向电导体 (62)通过所述第二绝缘层与所述阳极层(22)和所述第二导电层(44)通过所述第一电绝缘层(46)的至少第二横向电导体(64)电连接,所述第一 导电层(42),所述第二电绝缘层(50),所述阳极电极层(22)和所述发光层(26)与所述阴极层(24)连接。