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31. 发明公开

EP2901505A1 REPEATED SPIN CURRENT INTERCONNECTS 审中-公开
标题翻译：反复SPIN电源连接
公开(公告)号：EP2901505A1
公开(公告)日：2015-08-05
申请号：EP13841989.0
申请日：2013-06-27
申请人： Intel Corporation
发明人： MANIPATRUNI, Sasikanth , NIKONOV, Dmitri E. , YOUNG, Ian A.
IPC分类号： H01L41/12
CPC分类号： H01L43/02 , H01L27/22 , H01L27/222 , H01L43/00 , H01L2924/0002 , H01L2924/00
摘要： One embodiment includes a metal layer including first and second metal portions; a ferromagnetic layer including a first ferromagnetic portion that directly contacts the first metal portion and a second ferromagnetic portion that directly contacts the second metal portion; and a first metal non-magnetic interconnect coupling the first ferromagnetic portion to the second ferromagnetic portion. The spin interconnect conveys spin polarized current suitable for spin logic circuits. The interconnect may be included in a current repeater such as an inverter or buffer. The interconnect may perform regeneration of spin signals. Some embodiments extend spin interconnects into three dimensions (e.g., vertically across layers of a device) using vertical non-magnetic metal interconnects. Spin interconnects that can communicate spin current without repeated conversion of the current between spin and electrical signals enable spin logic circuits by reducing power requirements, reducing circuit size, and increasing circuit speed.

32. 发明公开

EP2693486A1 A nanomagnetic logic gate and an electronic device 审中-公开
标题翻译： Nanomagnetisches Logik-Gate und elektronische Vorrichtung
公开(公告)号：EP2693486A1
公开(公告)日：2014-02-05
申请号：EP13178578.4
申请日：2013-07-30
申请人： Technische Universität München
发明人： Becherer, Markus , Kiermaier, Josef , Breitkreutz, Stephan , Eichwald, Irina , Schmitt-Landsiedel, Doris
IPC分类号： H01L29/82 , H03K19/168 , H01L43/02 , G11C11/15 , H01L27/22 , B82Y10/00
CPC分类号： H03K19/20 , B82Y10/00 , B82Y25/00 , G11C11/14 , H01L27/22 , H01L29/82 , H01L43/00 , H03K19/168 , Y10S977/94
摘要： A nanomagnetic logic gate (100) arranged on a substrate (110) according to an embodiment includes at least one nanomagnetic first structure (120), at least one nanomagnetic second structure (150) and at least two layers including a first layer (130) and a second layer (160), wherein at least one first structure (120) is arranged in the first layer (130) on or parallel to a main surface (140) of the substrate (110), wherein at least one second structure (150) is arranged in the second layer (160) parallel to the first layer (130), and wherein at least one second structure (150) includes an artificial nucleation center (200) arranged such that a magnetic field component essentially perpendicular to the main surface (140) provided by at least one first structure (120) couples to the artificial nucleation center (200) such that a magnetization of the second structure (150) is changeable in response to the magnetic field component coupled into the artificial nucleation center (200), when a predetermined condition is fulfilled.
摘要翻译：布置在根据实施例的基板（110）上的纳米磁逻辑门（100）包括至少一个纳米磁性第一结构（120），至少一个纳米磁性第二结构（150）和至少两个层，包括第一层（130）和第二层（160），其中至少一个第一结构（120）在所述第一层（130）中布置在或平行于所述衬底（110）的主表面（140）上，其中至少一个第二结构 150）布置在平行于第一层（130）的第二层（160）中，并且其中至少一个第二结构（150）包括人造核中心（200），其布置成使得基本上垂直于主体由至少一个第一结构（120）提供的表面（140）耦合到人造成核心（200），使得第二结构（150）的磁化响应于耦合到人造成核中心的磁场分量 200），当a 满足预定条件。

33. 发明公开

EP2661667A1 OPTICALLY TRANSMISSIVE KEY ASSEMBLIES FOR DISPLAY-CAPABLE KEYBOARDS, KEYPADS, OR OTHER USER INPUT DEVICES 有权
标题翻译：光学TRANSMISSIVE KEYS的安排ANZEIGENAKTIVIERBARE开关，键盘或其他用户输入设备
公开(公告)号：EP2661667A1
公开(公告)日：2013-11-13
申请号：EP11854897.3
申请日：2011-01-05
申请人： Razer (Asia-pacific) Pte Ltd
发明人： WILSON, John , GARRETT, Robert , JULIN, Aaron
IPC分类号： G06F3/02
CPC分类号： H01H36/02 , G06F3/0219 , G06F3/0238 , G06F3/03543 , G06F2200/1612 , H01H3/125 , H01H9/161 , H01H13/14 , H01H13/83 , H01H2219/056 , H01H2219/06 , H01H2219/066 , H01H2235/028 , H01L43/00
摘要： A key that includes a body with an optically transmissive or light permeable region and an optical film coupled to or carried by the light permeable region. The key also includes a resilient structure coupled to the body. The key can be assembled or coupled to, or disposed relative or adjacent to, a display screen. The key also includes a switch actuator (e.g., an electromechanical switch actuator or contact element). Displacement of the key, more specifically the body of the key, displaces the switch actuator for actuating a switch. The resilient structure is configured to bias the body at a first position. The body can be actuated or displaced from the first position to a second position for effectuating corresponding displacement of the switch actuator and actuation of the switch. The resilient structure provides or establishes a positive tactile feedback upon user-directed or user-controlled actuation or displacement of the body. The resilient structure and/or the switch actuator is positioned and configured to minimize, reduce, or eliminate obstruction of light transmission through the light permeable region of the body.

34. 发明公开

EP2658004A2 METHOD FOR GENERATING SPIN WAVES 审中-公开
标题翻译： VERFAHREN ZUR ERZEUGUNG VON DREHWELLEN
公开(公告)号：EP2658004A2
公开(公告)日：2013-10-30
申请号：EP11850564.3
申请日：2011-12-19
申请人： Peoples Friendship University of Russia (PFUR) , Federal State Budgetary Institution «Federal Agency for Legal Protection of Military, Special And Dual use Intellectual Activity Results»
发明人： GRACHEV, Dmitry Dmitrievich , SEVASTYANOV, Leonid Antonovich
IPC分类号： H01L45/02
CPC分类号： H01L45/02 , B82Y10/00 , H01L43/00 , H01L51/0045
摘要： In the method, a pre-selected working area of a graphene film with a linear dimension of 2,000 nm, which working area is divided into sections having a dimension of 50-100 nm, is subjected to the effect of a pulsed alternating magnetic field with a frequency of 3 terahertz that corresponds to the transition from a ground energy level, corresponding to the non-excited state of spin density, to a fourth working energy level of the excited state of spin density in the graphene film, thus causing spin density pumping. A spatially localized external magnetic field is generated around the edges of the working area, which resonantly reflects spinons with a working frequency of 0.5-1 terahertz that corresponds to the transition from a third working energy level to a second working energy level of the excited state of spin density, said spinons causing the induced coherent radiation of working frequency spin waves as they pass through the working area.
摘要翻译：在该方法中，将线性尺寸为2000nm的石墨烯膜的预先选择的工作区域（该工作区域被划分为尺寸为50-100nm的部分）经受脉冲交变磁场的影响，对应于对应于自旋密度的非激发态的接地能级的转变的3太赫频率到石墨烯膜中的自旋密度的激发态的第四工作能级，从而导致自旋密度泵送。在工作区域的边缘周围产生空间局部的外部磁场，其共振地以0.5-1太赫兹的工作频率反射螺旋，对应于从第三工作能级到激发态的第二工作能级的转变的自旋密度，所述螺旋线在工作频率自旋波通过工作区域时引起感应的相干辐射。

35. 发明公开

EP2631912A1 Field-effect transistor with magnetic layer 审中-公开
标题翻译： Feldeffekttransistor mit magnetischem Schicht
公开(公告)号：EP2631912A1
公开(公告)日：2013-08-28
申请号：EP12157109.5
申请日：2012-02-27
申请人： Hitachi Ltd.
发明人： Wunderlich, Joerg , Ferguson, Andrew , Jungwirth, Tomas , Chiccarelli, Chiara
IPC分类号： G11C11/16 , H01F10/32 , H01L29/66 , H01L43/08 , H01L27/22
CPC分类号： G11C11/16 , G01R33/0052 , G01R33/0058 , G11C11/161 , H01L28/60 , H01L29/1606 , H01L29/66984 , H01L29/778 , H01L43/00
摘要： A field-effect transistor comprises a conductive channel (6) and first and second contacts (8, 9) to the channel, a gate electrode (4) for applying an electric field to the channel and a gate dielectric (5) separating the gate electrode from the channel. The channel comprises non-magnetic material. The channel has a length, L C . The gate electrode is arranged to gate the channel substantially along the length of the channel. A region (10) of the gate which is proximate to the channel comprises a magnetically-ordered material having a chemical potential which depends on magnetic moment orientation.
摘要翻译：场效应晶体管包括导电沟道（6）和到沟道的第一和第二触点（8,9），用于向沟道施加电场的栅电极（4）和将栅极分隔开的栅极电介质电极从通道。通道包括非磁性材料。通道长度为L C。栅电极被布置成基本上沿通道的长度对通道进行栅极控制。靠近通道的栅极的区域（10）包括具有取决于磁矩取向的化学势的磁性有序材料。

36. 发明公开

EP2469289A1 Field-effect magnetic sensor 有权转让
标题翻译： Feldeffektmagnetsensor
公开(公告)号：EP2469289A1
公开(公告)日：2012-06-27
申请号：EP11194304.9
申请日：2011-12-19
申请人： NXP B.V.
发明人： Curatola, Gilberto , Zieren, Victor , Heringa, Anco
IPC分类号： G01R33/06 , H01L27/22
CPC分类号： G01R33/06 , G01R33/066 , H01L27/22 , H01L29/82 , H01L43/00
摘要： A field-effect magnetic sensor facilitates highly-sensitive magnetic field detection. In accordance with one or more example embodiments, current flow respectively between first and second source/drain terminals and a third source/drain terminal is controlled using inversion layers in separate channel regions for each of the first and second terminals. In response to a magnetic field, a greater amount of current is passed between the third source/drain terminal and one of the first and second source/drain terminals, relative to an amount of current passed between the third source/drain terminal and the other one of the first and second source/drain terminals.
摘要翻译：场效应磁传感器有助于高灵敏度的磁场检测。根据一个或多个示例性实施例，分别在第一和第二源极/漏极端子与第三源极/漏极端子之间的电流分别通过用于第一和第二端子中的每一个的单独沟道区域中的反转层进行控制。响应于磁场，相对于在第三源极/漏极端子和第二源极/漏极端子之间通过的电流量，在第三源极/漏极端子与第一和第二源极/漏极端子中的一个之间传递更大量的电流第一和第二源极/漏极端子之一。

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