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31. 发明公开

EP3123536A4 TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY (STTM) ELEMENTS HAVING ANNULAR CONTACTS 有权
公开(公告)号：EP3123536A4
公开(公告)日：2017-11-15
申请号：EP14886793
申请日：2014-03-26
申请人： INTEL CORP
发明人： DOYLE BRIAN S , KENCKE DAVID L , OGUZ KAAN , DOCZY MARK L , SURI SATYARTH , CHAU ROBERT S , KUO CHARLES C , GOLIZADEH MOJARAD ROKSANA
IPC分类号： H01L43/08 , G11C11/16 , H01L43/12
CPC分类号： G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： Techniques are disclosed for forming a spin-transfer torque memory (STTM) element having an annular contact to reduce critical current requirements. The techniques reduce critical current requirements for a given magnetic tunnel junction (MTJ), because the annular contact reduces contact size and increases local current density, thereby reducing the current needed to switch the direction of the free magnetic layer of the MTJ. In some cases, the annular contact surrounds at least a portion of an insulator layer that prevents the passage of current. In such cases, current flows through the annular contact and around the insulator layer to increase the local current density before flowing through the free magnetic layer. The insulator layer may comprise a dielectric material, and in some cases, is a tunnel material, such as magnesium oxide (MgO). In some cases, a critical current reduction of at least 10% is achieved for a given MTJ.

32. 发明公开

EP3123476A4 TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY HAVING A DOT-CONTACTED FREE MAGNETIC LAYER 有权转让
公开(公告)号：EP3123476A4
公开(公告)日：2017-11-15
申请号：EP14887032
申请日：2014-03-28
申请人： INTEL CORP
发明人： KUO CHARLES C , OGUZ KAAN , DOYLE BRIAN S , DOCZY MARK L , KENCKE DAVID L , SURI SATYARTH , CHAU ROBERT S
IPC分类号： H01L43/08 , G11C11/16 , H01L43/12
CPC分类号： H01L43/08 , G11C11/161 , H01L43/02 , H01L43/12
摘要： Techniques are disclosed for fabricating a self-aligned spin-transfer torque memory (STTM) device with a dot-contacted free magnetic layer. In some embodiments, the disclosed STTM device includes a first dielectric spacer covering sidewalls of an electrically conductive hardmask layer that is patterned to provide an electronic contact for the STTM's free magnetic layer. The hardmask contact can be narrower than the free magnetic layer. The first dielectric spacer can be utilized in patterning the STTM's fixed magnetic layer. In some embodiments, the STTM further includes an optional second dielectric spacer covering sidewalls of its free magnetic layer. The second dielectric spacer can be utilized in patterning the STTM's fixed magnetic layer and may serve, at least in part, to protect the sidewalls of the free magnetic layer from redepositing of etch byproducts during such patterning, thereby preventing electrical shorting between the fixed magnetic layer and the free magnetic layer.

33. 发明授权

EP2828858B1 MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, SYSTEMS INCLUDING SUCH CELLS, AND METHODS OF FABRICATION 有权
标题翻译：记忆细胞，半导体器件结构，包括这种细胞的系统，以及制造方法
公开(公告)号：EP2828858B1
公开(公告)日：2017-11-08
申请号：EP13764214.6
申请日：2013-03-21
申请人： Micron Technology, Inc.
发明人： SANDHU, Gurtej, S. , KINNEY, Wayne, I.
IPC分类号： G11C11/16 , H01L43/08
CPC分类号： H01L43/08 , G11C11/15 , G11C11/161 , H01F10/1936 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/12

34. 发明授权

EP2721614B1 NON-VOLATILE MEMORY ELEMENT 有权转让
标题翻译：非易失性存储元件
公开(公告)号：EP2721614B1
公开(公告)日：2017-09-13
申请号：EP12730846.8
申请日：2012-06-14
申请人： Centre National de la Recherche Scientifique , Université Montpellier 2
发明人： GUILLEMENET, Yoann , TORRES, Lionel
IPC分类号： G11C7/10 , G11C11/16 , G11C13/00 , G11C14/00
CPC分类号： G11C13/0069 , G11C7/106 , G11C11/161 , G11C13/0002 , G11C14/0081 , G11C14/009

35. 发明公开

EP3200190A1 MULTI-FREE LAYER MTJ AND CURRENT INJECTION WRITING METHOD 审中-公开
标题翻译：多层MTJ和电流注入书写方法
公开(公告)号：EP3200190A1
公开(公告)日：2017-08-02
申请号：EP17158698.5
申请日：2013-02-07
申请人： QUALCOMM Incorporated
发明人： LI, Xia , WU, Wenqing , KIM, Jung Pill , ZHU, Xiaochun , KANG, Seung H. , MADALA, Raghu Sagar , YUEN, Kendrick H.
IPC分类号： G11C11/16 , G11C11/56 , H01L27/22 , H01L43/08
CPC分类号： G11C11/16 , G11C11/15 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C2211/5615 , G11C2211/562 , G11C2211/5633 , H01L27/222 , H01L27/228 , H01L43/08
摘要： A method for a multi-free layer magnetic tunnel junction, MTJ, memory cell, comprising:
-injecting a first write current from one of a first MTJ terminal and a base MTJ terminal to the other of the first MTJ terminal and the base MTJ terminal, the first write current passing through a first free magnetization layer; and
-injecting a second write current from one of a second MTJ terminal and the base MTJ terminal to the other of the second MTJ terminal and the base MTJ terminal, the second write current passing through a second free magnetization layer.
摘要翻译：一种用于多自由层磁隧道结MTJ存储器单元的方法，包括：将第一写入电流从第一MTJ端子和基极MTJ端子中的一个注入到第一MTJ端子和基极MTJ端子中的另一个第一写入电流通过第一自由磁化层; 以及将第二写入电流从第二MTJ端子和基极MTJ端子中的一个注入到第二MTJ端子和基极MTJ端子中的另一个，第二写入电流通过第二自由磁化层。

36. 发明公开

EP3198599A1 METHOD OF FABRICATING CRYSTALLINE MAGNETIC FILMS FOR PSTTM APPLICATIONS 审中-公开
标题翻译：用于PSTTM应用的结晶磁膜的制造方法
公开(公告)号：EP3198599A1
公开(公告)日：2017-08-02
申请号：EP14902302.0
申请日：2014-09-26
申请人： Intel Corporation
发明人： O'BRIEN, Kevin P. , DOYLE, Brian S. , OGUZ, Kaan , CHAU, Robert S. , SURI, Satyarth
IPC分类号： G11C11/16
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08 , H01L43/10
摘要： A method including forming a device stack including a dielectric layer between a fixed magnetic layer and a free magnetic layer on a fully-crystalline sacrificial film or substrate including a crystal lattice similar to the crystal lattice of the dielectric material; and transferring the device stack from the sacrificial film to a device substrate. An apparatus including a device stack including a dielectric layer between a fixed magnetic layer and a free magnetic layer on a device substrate wherein the fixed magnetic layer and the free magnetic layer each have a crystalline lattice conforming to a crystalline lattice of the sacrificial film or substrate on which they were formed prior to transfer to the device substrate.
摘要翻译：一种方法，包括：在包括类似于介电材料的晶格的晶格的全晶体牺牲膜或衬底上的固定磁性层和自由磁性层之间形成包括介电层的器件叠层; 以及将器件堆叠从牺牲膜转移到器件衬底。一种装置，包括装置堆叠，该装置堆叠包括在装置基板上的固定磁层和自由磁层之间的介电层，其中固定磁层和自由磁层各自具有与牺牲膜或基板的晶格相符的晶格在转移到器件衬底之前，在其上形成它们。

37. 发明授权

EP3002758B1 Self-referenced MRAM cell and magnetic field sensor comprising the self-referenced MRAM cell 有权转让
标题翻译：自参考MRAM单元和包括自参考MRAM单元的磁场传感器
公开(公告)号：EP3002758B1
公开(公告)日：2017-06-21
申请号：EP14290298.0
申请日：2014-10-03
申请人： Crocus Technology S.A.
发明人： Stainer, Quentin
IPC分类号： G11C11/16 , G01R33/09
CPC分类号： G11C11/1675 , G01R33/098 , G11C11/161 , G11C11/1673
摘要： The present disclosure concerns a self-referenced MRAM cell (1) comprising a reference layer (23) having a fixed reference magnetization (230), a sense layer (21) having a free sense magnetization (210), a tunnel barrier (22), a biasing layer (25) having bias magnetization (250) and a biasing antiferromagnetic layer (27) pinning the bias magnetization (250) in a bias direction when MRAM cell (1) is at temperature equal or below a bias threshold temperature (T B ); the bias magnetization (250) being arranged for inducing a bias field (251) adapted for biasing the sense magnetization (210) in a direction opposed to the bias direction, such that the biased sense magnetization .(210) varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization (230). The present disclosure further concerns a magnetic field sensor (100) comprising a plurality of the self-referenced MRAM cell (1) and a a method for programming the magnetic field sensor.
摘要翻译：本公开涉及包括具有固定参考磁化（230）的参考层（23），具有自由感应磁化强度（210）的感测层（21），隧道势垒（22）的自参考MRAM单元（1），当MRAM单元（1）处于等于或低于偏置阈值温度（TB）的温度时，具有偏置磁化（250）的偏置层（25）和偏置方向上的偏置反铁磁层（27））; 所述偏置磁化（250）被布置用于引起适于在与所述偏置方向相反的方向上偏置所述感测磁化（210）的偏置场（251），使得所述偏置的感测磁化（210）当外部磁场在基本上垂直于参考磁化（230）中的一个的方向上取向时，该外部磁场被施加到外部磁场。本公开还涉及包括多个自参考MRAM单元（1）的磁场传感器（100）以及用于编程磁场传感器的方法。

38. 发明公开

EP3058604A4 ISOLATION OF MAGNETIC LAYERS DURING ETCH IN A MAGNETORESISTIVE DEVICE 有权转让
标题翻译： EINER MAGNETORESISTIVEN VORRICHTUNG的ISOLIERUNG VON MAGNETSCHICHTENWÄHRENDDESÄTZENS
公开(公告)号：EP3058604A4
公开(公告)日：2017-06-14
申请号：EP14854247
申请日：2014-10-09
申请人： EVERSPIN TECHNOLOGIES INC
发明人： MUDIVARTHI CHAITANYA , DESHPANDE SARIN A , AGGARWAL SANJEEV
IPC分类号： H01L43/12 , G11B5/00 , H01L27/22 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , G11B5/3163 , G11C11/161 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , Y10T29/49021
摘要： Isolation of magnetic layers in the magnetoresistive stack is achieved by passivation of sidewalls of the magnetic layers or deposition of a thin film of non-magnetic dielectric material on the sidewalls prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.
摘要翻译：通过在随后的蚀刻步骤之前钝化磁性层的侧壁或在侧壁上沉积非磁性电介质材料的薄膜来实现磁阻堆叠中的磁性层的隔离。使用非反应性气体蚀刻磁性层进一步防止了侧壁的劣化。

39. 发明公开

EP3171364A1 METHOD FOR CONTROLLING MAGNETIC DOMAIN WALL OF MAGNETIC STRUCTURE AND MAGNETIC MEMORY DEVICE USING SAME 审中-公开
标题翻译：用于控制磁结构和磁存储设备THEREFOR的磁畴壁
公开(公告)号：EP3171364A1
公开(公告)日：2017-05-24
申请号：EP15822296.8
申请日：2015-01-16
申请人： Korea Research Institute Of Standards And Science
发明人： MOON, Kyoungwoong , HWANG, Chanyong
IPC分类号： G11B5/02 , H01L27/105 , G11C11/15
CPC分类号： G11C19/0808 , G11B5/02 , G11C11/161 , G11C11/1675 , G11C19/0816 , G11C19/085 , H01L27/105
摘要： The present invention provides a method for controlling a magnetic domain wall of a magnetic structure and a magnetic memory device using same. The method includes: a first step of applying a first magnetic field in a first direction to a magnetic structure having a plurality of magnetic domains and a magnetic domain wall between the magnetic domains, and applying a second magnetic field in a second direction to the magnetic structure, the first direction being parallel to the magnetization direction of the magnetic domain wall and the second direction being parallel to the magnetization direction of the magnetic domain wall; and a second step of applying a third magnetic field in a direction opposite to the first direction to the magnetic structure and applying a fourth magnetic field in a direction opposite to the second direction to the magnetic structure, wherein the magnetic domain wall can be moved uniformly in a direction parallel to the magnetization direction of the magnetic domain wall or the magnetization direction of the magnetic domains.
摘要翻译：本发明提供了一种用于控制磁结构的磁畴壁，并使用相同的磁存储器件的方法。该方法包括：对磁结构的磁施加第一磁场在第一方向上具有磁畴的磁畴之间的多个和磁畴壁，且施加第二磁场的第二方向的第一步骤结构中，第一方向平行于磁畴壁的磁化方向与所述第二方向平行于所述磁畴壁的磁化方向; 并且在相反的方向上与所述第一方向施加第三磁场到磁结构和在一个方向相反的第二方向上的磁结构施加第四磁场，worin磁畴壁的第二步骤可以均匀地移动在一个方向上平行于磁畴壁的磁化方向或磁畴的磁化方向。

40. 发明公开

EP3170178A1 SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL 有权
标题翻译：磁性随机存取存储器（MRAM）单元的开关薄膜结构
公开(公告)号：EP3170178A1
公开(公告)日：2017-05-24
申请号：EP15727800.3
申请日：2015-05-22
申请人： Qualcomm Incorporated
发明人： LI, Xia , CHEN, Wei-Chuan , LU, Yu , LEE, Kangho , KANG, Seung Hyuk
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： H01L27/224 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2213/73 , H01L27/228 , H01L43/08
摘要： An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.
摘要翻译： MRAM单元可以包括磁性隧道结（MTJ）。 MTJ包括引脚层，阻挡层，自由层和封盖层。 MRAM单元进一步包括直接耦合到MTJ的电极的双向二极管选择器，以允许访问MTJ。

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