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21. 发明公开

EP0156365A3 Semiconductor laser 失效
公开(公告)号：EP0156365A3
公开(公告)日：1987-06-03
申请号：EP85103605
申请日：1985-03-26
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kurihara, Haruki c/o Patent Division , Matsumoto, Kenji c/o Patent Division , Tamura, Hideo c/o Patent Division , Suzuki, Kazuo c/o Patent Division
IPC分类号： H01S03/19
CPC分类号： H01S5/2232 , H01S5/0601 , H01S5/32308
摘要： An inner stripe with self-aligned saturable-absorber structure semiconductor laser comprises a semiconductor substrate (56) of a first conductivity type; a semiconductor current-blocking layer (CBL) (58) of a second conductivity type formed on the substrate (56) and having a stepped channel composed of an optical-guiding channel (66) and current-restricting channel (64) which is grooved at the bottom of the optical-guiding channel (66) through the CBL (58) into the substrate (56); a semiconductor cladding layer (68) of a first conductivity type formed over the CBL (58) to bury the stepped channel; a semiconductor active layer (70) of a first or second conductivity type formed on the cladding layer (68); and a semiconductor cladding layer (72) of a second conductivity type formed on the active layer (70). whereby laser noises can be markedly suppressed through wide temperature fluctuations and optical feedback range.

22. 发明公开

EP0199588A2 A semiconductor laser device 失效
公开(公告)号：EP0199588A2
公开(公告)日：1986-10-29
申请号：EP86303044.1
申请日：1986-04-22
申请人： SHARP KABUSHIKI KAISHA
发明人： Morimoto, Taiji , Taneya, Mototaka , Hayashi, Hiroshi , Yamamoto, Saburo
IPC分类号： H01S3/19 , H01S3/085
CPC分类号： H01S5/16 , H01S5/2232 , H01S5/2234
摘要： A semiconductor laser device comprises a substrate having a main striped channel for confining current therein and sub-striped channels formed in a parallel manner outside of said main striped channel, the width of said sub-striped channels being greater than that of said main striped channel, and an active layer for laser oscillation, whereby the portions of said active layer corresponding to said sub-striped channels are formed into a concave, and the portion of said active layer positioned between the concaved portions of said active layer results in a plane with a limited thickness.

23. 发明公开

EP0193404A2 A semiconductor laser array device 失效
标题翻译：半导体激光器阵列装置
公开(公告)号：EP0193404A2
公开(公告)日：1986-09-03
申请号：EP86301414.8
申请日：1986-02-27
申请人： SHARP KABUSHIKI KAISHA
发明人： Maei, Shigeki , Hayashi, Hiroshi , Yamamoto, Saburo
IPC分类号： H01S3/19 , H01S3/25
CPC分类号： H01S5/4031 , H01S5/2232 , H01S5/2234
摘要： A semiconductor laser array device comprises an active layer (24) for laser oscillation having a plurality of curved portions (240) at substantially right angles to the resonance direction to thereby create the distribution of the refractive index between the curved portions (240) and the flat portions (241) of said active layer (24), resulting in a plurality of laser oscillation operation areas which are positioned between the curved portions (240) of said active layer (24) and which are optically coupled therebetween.
摘要翻译：一种半导体激光器阵列器件包括用于激光振荡的有源层（24），其具有与谐振方向基本成直角的多个弯曲部分（240），从而产生弯曲部分（240）与弯曲部分所述有源层（24）的平坦部分（241）导致多个激光振荡操作区域位于所述有源层（24）的弯曲部分（240）之间并且在它们之间光耦合。

24. 发明公开

EP0183473A2 Semiconductor laser devices 失效
标题翻译：半导体激光器件
公开(公告)号：EP0183473A2
公开(公告)日：1986-06-04
申请号：EP85308420.0
申请日：1985-11-19
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Saburo
IPC分类号： H01S3/19 , H01S3/103
CPC分类号： H01S5/1032 , H01S5/026 , H01S5/0422 , H01S5/0425 , H01S5/06203 , H01S5/06209 , H01S5/06213 , H01S5/0622 , H01S5/0625 , H01S5/06817 , H01S5/10 , H01S5/2232 , H01S5/2234
摘要： A semiconductor laser device comprising a striped laser-operation area (1), a light emitting diode area (2) disposed parallel to said striped laser-operation area (1), an optical waveguide (3) attaining an optical coupling between said laser-operation area (1) and said light emitting area (2), and a means (4, 12, 13, 111, 222) for independently supplying electric current to said laser-operation area (1) and said light emitting area (2).
摘要翻译： 1。一种半导体激光装置，其特征在于，具备：条纹状的激光操作区域;与所述条状的激光操作区域平行配置的发光二极管区域;在所述激光操作区域之间实现光耦合的光波导路; （1）和所述发光区域（2）的装置和用于独立地向所述激光操作区域（1）和所述发光区域（2）提供电流的装置（4,12,13,111,222）。

25. 发明公开

EP0144205A2 Semiconductor laser 失效
标题翻译：半导体激光
公开(公告)号：EP0144205A2
公开(公告)日：1985-06-12
申请号：EP84308195.1
申请日：1984-11-26
申请人： TRW INC.
发明人： Morrison, Charles Boswell , Figueroa, Luis , Burghard, Andre , Goodwin, Frank Eugene , Law, Hsiang-Yi David
IPC分类号： H01S3/19 , H01S3/06
CPC分类号： H01S5/2232 , H01S5/2234 , H01S5/2237 , H01S5/4031
摘要： A semiconductor laser diode structure operable at high power and brightness levels and having a relatively low threshold current, high efficiency, good mode stability, and reduced temperature sensitivity. One disclosed embodiments has twin parallel channels formed in a p type substrate, and employ an n type blocking layer to confine current to a region between and including the channels. The structure includes first and second inactive cladding layers, and an active layer forming a diode junction. The first or lower inactive layer is thinner in the region between the channels, and this results in a higher forward-bias voltage at the center of the active layer, thereby focusing the current near the central position. This current focusing mechanism, which is enhanced by the optional use of a curved active layer, results in the improved characteristics of the structure. By selecting the effective width of a contact stripe overlying the second or upper inactive layer, single or multiple optical gain filaments may be produced. Another disclosed embodiment has no blocking layer, but also employs twin channels to provide a desirable far-field distribution pattern.
摘要翻译：一种半导体激光二极管结构，可在高功率和亮度水平下工作，并具有相对较低的阈值电流，高效率，良好的模式稳定性和降低的温度灵敏度。一个公开的实施例具有形成在p型衬底中的双平行沟道，并且采用n型阻挡层来将电流限制到沟道之间的区域并且包括沟道。该结构包括第一和第二不活动包层以及形成二极管结的有源层。在通道之间的区域中，第一或者更低的非活性层更薄，这导致活性层中心处的正向偏置电压更高，从而将电流聚焦在中心位置附近。这种通过可选地使用弯曲的有源层而增强的当前聚焦机构导致结构的改进特性。通过选择覆盖第二或上部非活性层的接触条的有效宽度，可以制造单个或多个光学增益细丝。另一个公开的实施例不具有阻挡层，但是也使用双通道来提供期望的远场分布模式。

26. 发明公开

EP0106152A2 Semiconductor laser device 失效
标题翻译： Halbleiter-Laservorrichtung。
公开(公告)号：EP0106152A2
公开(公告)日：1984-04-25
申请号：EP83108998.2
申请日：1983-09-12
申请人： HITACHI, LTD.
发明人： Kuroda, Takao , Kajimura, Takashi , Kashiwada, Yasutoshi , Chinone, Naoki , Ouchi, Hirobumi , Ohtoshi, Tsukuru
IPC分类号： H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： 57 A semiconductor laser device has at least an optical confinement region which includes a first semiconductor layer (3) and second and third semiconductor layers (2, 4) holding the first semiconductor layer (3) therebetween and having a greater band gap and a lower refractive index than the first semiconductor layer (3). The second and third semiconductor layers (2, 4) have conductivity types opposite to each other. The relationship between the donor density (No x 10 17 cm- 3 ) of the n-conductivity type semiconductor layer (2) of the second and third semiconductor layers (2, 4) and the proportion (Γ n %) of the optical output existing in the n-conductivity type semiconductor layer (2) relative to the total optical output of the laser is set at No x Γ n ≧ 500. Noise characteristics are sharply improved.
摘要翻译：半导体激光装置具有至少一个光限制区域，该光限制区域包括第一半导体层（3）和将第一半导体层（3）保持在其间并具有较大带隙和较低折射率的第二和第三半导体层（2,4）指数比第一半导体层（3）。第二和第三半导体层（2,4）具有彼此相反的导电类型。第二和第三半导体层（2,4）的n导电型半导体层（2）的供体密度（ND×10 1 <7> cm -3）之间的关系和比例存在于n导电型半导体层（2）中的光输出相对于激光的总光输出的（GAMMA n％）设定为ND×GAMMA n> = 500。噪声特性急剧提高。

27. 发明公开

EP0057587A3 Semiconductor deposition method 有权
标题翻译：半导体沉积法
公开(公告)号：EP0057587A3
公开(公告)日：1983-02-09
申请号：EP82300464
申请日：1982-01-29
申请人： XEROX CORPORATION
发明人： Burnham, Robert D.
IPC分类号： C30B25/04 , H01L33/00
CPC分类号： C30B25/04 , C23C16/042 , H01S5/223 , H01S5/2232 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/2275 , Y10S148/026 , Y10S148/05 , Y10S148/106 , Y10S148/11 , Y10S438/944
摘要： Various mask configurations and techniques for their employment in a chemical vapor deposition system are disclosed. These masks can be utilized in the fabrication of semiconductor devices. The masks have at least one aperture therein and may be either removed after device processing or formed as an integral part of the semiconductor device being fabricated. In either case, semiconductor devices can be formed with one or more layers characterized by desired spatial variations in their thickness and/ or contour. The integral masking techniques provide for incorporated self alignment which simplifies device processing. The fabrication of semiconductor injection lasers is disclosed as examples of applications of the masking techniques.

28. 发明公开

EP1906498A1 Halbleiterlaser mit Absorberzone zur Dämpfung höherer Moden 审中-公开
标题翻译： Halbleiterlaser mit Absorberzone zurDämpfunghöhererModen
公开(公告)号：EP1906498A1
公开(公告)日：2008-04-02
申请号：EP07017398.4
申请日：2007-09-05
申请人： OSRAM Opto Semiconductors GmbH
发明人： Eichler, Christoph, Dr. , Lell, Alfred , Rumbolz, Christian
IPC分类号： H01S5/223 , H01S5/22 , H01S5/06 , H01S5/183
CPC分类号： H01S5/2232 , H01S5/1064 , H01S5/1237 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2214 , H01S5/2216 , H01S5/2219 , H01S5/222 , H01S5/2231 , H01S5/32341 , H01S2301/166 , H01S2304/12
摘要： Die Erfindung gibt einen Halbleiterlaser (1) mit einer Halbleiter-Schichtenfolge (2), die eine aktive Zone (3) zur Erzeugung von elektromagnetischer Strahlung umfasst, und einer Absorberzone (4) zur Dämpfung höherer Moden an, wobei die Absorberzone (4) innerhalb der Halbleiter-Schichtenfolge (2) angeordnet ist oder an die Halbleiter-Schichtenfolge (2) angrenzt.
摘要翻译：激光器（1）具有用于产生电磁辐射的具有有源区域（3）的半导体层序列（2）和用于阻尼较高模式的吸收区域（4）。吸收区域布置在层序列内或者以层序连接，其中吸收区域具有吸收材料，该吸收材料是铟锡氧化物，硅，钛，铝，镓，铌，锆，钽的氧化物或氮化物，铪，锌，镁，铑和铟。

29. 发明公开

EP1873879A1 Kantenemittierender Halbleiterlaser 有权转让
公开(公告)号：EP1873879A1
公开(公告)日：2008-01-02
申请号：EP07011919.3
申请日：2007-06-18
申请人： Osram Opto Semiconductors GmbH
发明人： Eichler, Christoph, Dr. , Härle, Volker, Dr. , Rumbolz, Christian , Strauss, Uwe, Dr.
IPC分类号： H01S5/323 , H01S5/02 , H01S5/22 , H01S5/32
CPC分类号： H01S5/32341 , H01L33/0079 , H01S5/0216 , H01S5/0217 , H01S5/2004 , H01S5/2031 , H01S5/2214 , H01S5/2216 , H01S5/2218 , H01S5/2231 , H01S5/2232 , H01S5/3213 , H01S5/3214 , H01S2301/173
摘要： Es wird ein kantenemittierender Halbleiterlaserchip mit
- einem Trägersubstrat (1),
- einer Zwischenschicht (2), die eine Haftung zwischen dem Trägersubstrat (1) und einer Bauelementstruktur (50) des kantenemittierenden Halbleiterlaserchips vermittelt, und
- der Bauelementstruktur (50) mit einer aktiven Zone (5), die zur Strahlungserzeugung vorgesehen ist, angegeben.
摘要翻译：芯片具有载体基板（1）和中间层（2），其在载体基板和芯片的部件结构（50）之间施加接合。中间层是电绝缘的。部件结构包括用于产生辐射的活动区域（5）。中间层形成芯片的覆盖层（3,30）的一部分。中间层在载体衬底和活性区之间设置电接触。

30. 发明公开

EP1817524A2 LIGHT-EMITTING PHOTONIC DEVICE 审中-公开
标题翻译：发光器件的光子
公开(公告)号：EP1817524A2
公开(公告)日：2007-08-15
申请号：EP05851700.4
申请日：2005-11-16
申请人： Canon Kabushiki Kaisha
发明人： CAO, Jiang-Rong , MIYAWAKI, Mamoru
IPC分类号： F21V7/04
CPC分类号： H01S5/026 , B82Y20/00 , G02B6/12007 , G02B6/1225 , H01S5/0422 , H01S5/0425 , H01S5/105 , H01S5/2059 , H01S5/221 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/34306 , H01S5/34373 , H01S5/4031 , H01S5/405 , H01S5/4087 , H04N9/3129
摘要： A colored light source apparatus is provided. The apparatus includes light sources (01) corresponding to active regions defined by defects in a photonic crystal structure, wherein the photonic crystal structure is based on periodic structures. The apparatus also includes a waveguide (02), a first electrode (09), and a second electrode. Varying electrical properties between the first and second electrodes stimulates radiation production in the active regions (08), wherein the radiation is at least partially coupled to and guided by the waveguide (02).

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