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1. 发明授权

EP0532133B1 Laser array 失效
标题翻译：激光器的多重配置
公开(公告)号：EP0532133B1
公开(公告)日：1996-04-03
申请号：EP92203738.7
申请日：1986-12-10
申请人： XEROX CORPORATION
发明人： Thornton, Robert L. , Sang, Henry W., Jr. , Paoli, Thomas L. , Burnham, Robert D.
IPC分类号： H01S3/23 , G06K15/12
CPC分类号： G06K15/1247 , B41J2/465 , G06K15/1252 , H01S5/2059 , H01S5/2063 , H01S5/2232 , H01S5/2234 , H01S5/3428 , H01S5/4031 , H01S5/4037 , H01S5/405

2. 发明授权

EP0206496B1 Phased array semiconductor laser 失效
标题翻译：相位切换半导体激光器。
公开(公告)号：EP0206496B1
公开(公告)日：1993-10-20
申请号：EP86303650.5
申请日：1986-05-14
申请人： XEROX CORPORATION
发明人： Thornton, Robert L. , Burnham, Robert D.
IPC分类号： H01S3/19 , H01S3/25 , H01S3/23 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2013 , H01S5/2059 , H01S5/3432 , H01S5/4031

3. 发明公开

EP0057587A3 Semiconductor deposition method 有权
标题翻译：半导体沉积法
公开(公告)号：EP0057587A3
公开(公告)日：1983-02-09
申请号：EP82300464
申请日：1982-01-29
申请人： XEROX CORPORATION
发明人： Burnham, Robert D.
IPC分类号： C30B25/04 , H01L33/00
CPC分类号： C30B25/04 , C23C16/042 , H01S5/223 , H01S5/2232 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/2275 , Y10S148/026 , Y10S148/05 , Y10S148/106 , Y10S148/11 , Y10S438/944
摘要： Various mask configurations and techniques for their employment in a chemical vapor deposition system are disclosed. These masks can be utilized in the fabrication of semiconductor devices. The masks have at least one aperture therein and may be either removed after device processing or formed as an integral part of the semiconductor device being fabricated. In either case, semiconductor devices can be formed with one or more layers characterized by desired spatial variations in their thickness and/ or contour. The integral masking techniques provide for incorporated self alignment which simplifies device processing. The fabrication of semiconductor injection lasers is disclosed as examples of applications of the masking techniques.

4. 发明公开

EP0269359A3 Disordering of semiconductors 失效
标题翻译：半导体的异常
公开(公告)号：EP0269359A3
公开(公告)日：1989-03-29
申请号：EP87310162.0
申请日：1987-11-18
申请人： XEROX CORPORATION
发明人： Epler, John E. , Burnham, Robert D.
IPC分类号： H01L21/268 , H01L21/263 , H01S3/19
CPC分类号： H01S5/20 , H01L21/182 , H01L21/24 , H01L21/2636 , H01S5/2059 , H01S5/3428 , H01S5/4031
摘要： An energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/or (b) incorporating significantly large amounts of an impurity, present in an encapsulation surface layer of a solid state semiconductor heterostructure, into regions of the heterostructure via absorption of the impurity into liquid alloy melt to form regions having different optical and/or electrical properties and (c) thereafter optionally applying IID to enlarge or extend the disordered/as-grown boundaries of the initially melted region. As a direct write analogue to surface initiated impurity-induced disordering (IID), EBILD is a flexible and viable process with high importance for continuous reproducibility and high yield in the fabrication of optoelectronic devices and thin film electronic and optoelectronic circuitry. The invention provides impurity incorporation from a solid phase impurity source using an energy beam liquid phase technique to bring about absorption of the impurity with underlying constituents in a desired pattern to produce regions that may be disordered and possess different electrical properties or optical properties or both compared to regions not part of the scanned pattern.

5. 发明公开

EP0269359A2 Disordering of semiconductors 失效
标题翻译： Verfahren zurVeränderungder Eigenschften von Halbleitern。
公开(公告)号：EP0269359A2
公开(公告)日：1988-06-01
申请号：EP87310162.0
申请日：1987-11-18
申请人： XEROX CORPORATION
发明人： Epler, John E. , Burnham, Robert D.
IPC分类号： H01L21/268 , H01L21/263 , H01S3/19
CPC分类号： H01S5/20 , H01L21/182 , H01L21/24 , H01L21/2636 , H01S5/2059 , H01S5/3428 , H01S5/4031
摘要： An energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/or (b) incorporating significantly large amounts of an impurity, present in an encapsulation surface layer of a solid state semiconductor heterostructure, into regions of the heterostructure via absorption of the impurity into liquid alloy melt to form regions having different optical and/or electrical properties and (c) thereafter optionally applying IID to enlarge or extend the disordered/as-grown boundaries of the initially melted region. As a direct write analogue to surface initiated impurity-induced disordering (IID), EBILD is a flexible and viable process with high importance for continuous reproducibility and high yield in the fabrication of optoelectronic devices and thin film electronic and optoelectronic circuitry. The invention provides impurity incorporation from a solid phase impurity source using an energy beam liquid phase technique to bring about absorption of the impurity with underlying constituents in a desired pattern to produce regions that may be disordered and possess different electrical properties or optical properties or both compared to regions not part of the scanned pattern.
摘要翻译：使用能量束感应层无序（EBILD）工艺来（a）在固态半导体异质结构的扫描图案区域局部熔化，以产生具有不同光学性质的中间组合物合金和/或（b）大量掺入存在于固态半导体异质结构的封装表面层中的杂质通过将杂质吸收到液态合金熔体中而形成具有不同光学和/或电特性的区域，并且随后可选地应用IID 扩大或延伸初始熔化区域的无序/生长边界。作为直接写入类似于表面引发的杂质诱导的无序（IID）的方法，EBILD是一种灵活和可行的方法，对于光电子器件和薄膜电子和光电子电路的连续再现性和高产率具有重要意义。本发明使用能量束液相技术从固相杂质源中提供杂质掺杂，以使所需杂质与所需图案的底层组分吸收，产生可能无序并且具有不同电性能或光学性质的区域，或两者都被比较到不是扫描图案的一部分的区域。

6. 发明授权

EP0020019B1 A heterojunction solid state laser 失效
标题翻译：异常固体激光器
公开(公告)号：EP0020019B1
公开(公告)日：1983-08-17
申请号：EP80301343.2
申请日：1980-04-24
申请人： XEROX CORPORATION
发明人： Scifres, Donald R. , Streifer, William , Burnham, Robert D.
IPC分类号： H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234

7. 发明公开

EP0057587A2 Semiconductor deposition method 有权
标题翻译：一种用于沉积半导体的方法。
公开(公告)号：EP0057587A2
公开(公告)日：1982-08-11
申请号：EP82300464.3
申请日：1982-01-29
申请人： XEROX CORPORATION
发明人： Burnham, Robert D.
IPC分类号： C30B25/04 , H01L33/00
CPC分类号： C30B25/04 , C23C16/042 , H01S5/223 , H01S5/2232 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/2275 , Y10S148/026 , Y10S148/05 , Y10S148/106 , Y10S148/11 , Y10S438/944
摘要： Various mask configurations and techniques for their employment in a chemical vapor deposition system are disclosed. These masks can be utilized in the fabrication of semiconductor devices. The masks have at least one aperture therein and may be either removed after device processing or formed as an integral part of the semiconductor device being fabricated. In either case, semiconductor devices can be formed with one or more layers characterized by desired spatial variations in their thickness and/ or contour. The integral masking techniques provide for incorporated self alignment which simplifies device processing. The fabrication of semiconductor injection lasers is disclosed as examples of applications of the masking techniques.

8. 发明公开

EP0026062A1 A heterojunction semiconductor laser 有权
标题翻译：激光半导体异质结。
公开(公告)号：EP0026062A1
公开(公告)日：1981-04-01
申请号：EP80303095.6
申请日：1980-09-04
申请人： XEROX CORPORATION
发明人： Burnham, Robert D. , Scifres, Donald R. , Streifer, William
IPC分类号： H01S3/19
CPC分类号： H01S5/2232 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A heterostructure semiconductor laser (40) is characterized by having a channeled mesa (44) contiguous with the top surface (55) of the laser substrate (52). The channeled mesa (44) comprises an elongated mesa with an elongated channel (50) formed in the top surface (47, 49) of the mesa structure. The epitaxial growth of semiconductor layers over the channeled mesa produces layers having uniform thickness with smooth facet like texture and without layer surface irregularities. The channeled mesa may also be employed in the fabrication of nonplanar large optical cavity lasers.

9. 发明授权

EP0269359B1 Disordering of semiconductors 失效
标题翻译：一种用于改变半导体的Eigenschften方法。
公开(公告)号：EP0269359B1
公开(公告)日：1994-06-15
申请号：EP87310162.0
申请日：1987-11-18
申请人： XEROX CORPORATION
发明人： Epler, John E. , Burnham, Robert D.
IPC分类号： H01L21/268 , H01L21/263 , H01S3/19
CPC分类号： H01S5/20 , H01L21/182 , H01L21/24 , H01L21/2636 , H01S5/2059 , H01S5/3428 , H01S5/4031

10. 发明公开

EP0532133A3 Laser array 失效
标题翻译：激光阵列
公开(公告)号：EP0532133A3
公开(公告)日：1993-03-24
申请号：EP92203738.7
申请日：1986-12-10
申请人： XEROX CORPORATION
发明人： Thornton, Robert L. , Sang, Henry W., Jr. , Paoli, Thomas L. , Burnham, Robert D.
IPC分类号： H01S3/23 , G06K15/12
CPC分类号： G06K15/1247 , B41J2/465 , G06K15/1252 , H01S5/2059 , H01S5/2063 , H01S5/2232 , H01S5/2234 , H01S5/3428 , H01S5/4031 , H01S5/4037 , H01S5/405
摘要： A incoherent, optically-uncoupled laser array (40, 60) for an electro-optic line modulator, a line printer or the like, comprises a plurality of spatial laser emitters (54) having high power density and a uniform far field emission pattern. Structural means is provided in the array to permit the spacing of the emitters sufficiently close to provide a uniform far field emission pattern without permitting phase-locking between adjacent emitters of the array. The structural means may comprise geometric lateral and diagonal displacement (43) of adjacent optical cavities of the laser elements. Alternatively, the structural means may comprise a plurality of spatially-disposed isolation regions (72) extending across the laser array and extending into the laser array a distance sufficient to isolate the optical cavities (78) of the laser elements from one another, to prevent optical coupling between adjacent laser elements. The spatial isolation regions may be formed into the fabricated laser array using impurity-induced disordering (IID).

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