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21. 发明授权

EP0575247B1 Procédé de réalisation de transistor bipolaire à hétérojonction et transistor obtenu 失效
标题翻译：由此获得一种用于生产双极异质结晶体管和晶体管工艺
公开(公告)号：EP0575247B1
公开(公告)日：1998-11-11
申请号：EP93401540.5
申请日：1993-06-16
申请人： FRANCE TELECOM
发明人： Dubon-Chevallier, Chantal , Dangla, Jean , Benchimol, Jean-Louis , Alexandre, François
IPC分类号： H01L29/737 , H01L21/331 , H01L29/205
CPC分类号： H01L29/66318 , H01L29/7371

22. 发明公开

EP0818810A2 Method of fabricating high beta HBT devices 失效
标题翻译：制造高电压HBT器件的方法
公开(公告)号：EP0818810A2
公开(公告)日：1998-01-14
申请号：EP97111065.5
申请日：1997-07-02
申请人： TRW INC.
发明人： Lammert, Michael
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L29/66318 , Y10S148/072 , Y10S148/10 , Y10S438/926 , Y10S438/944 , Y10S438/945 , Y10S438/951
摘要： A method for controlling the spacing between the emitter mesa and the base ohmic metal of a heterojunction bipolar transistor (HBT) to obtain a relatively high gain (β) with a low-parasitic base resistance. In a first method, after the emitter, base and collector layers are epitaxially grown on a substrate, a sacrificial layer is deposited on top of the emitter layer. The emitter mesa is patterned with a photoresist using conventional lithography. Subsequently, the sacrificial layer is etched to produce an undercut. The emitter layer is then etched and a photoresist is applied over the first photoresist used to pattern the emitter mesa, as well as the entire device. The top layer of photoresist is patterned with a conventional process for lift-off metalization, such that the final resist profile has a re-entrant slope. The base ohmic metal is deposited and then lifted off by dissolving both the second layer of photoresist, as well as the original photoresist over the emitter mesa. The sacrificial layer is stripped using an isotropic etch leaving a base ohmic metal region surrounding an emitter mesa at a spacing that is determined by the initial undercut of the sacrificial layer. In an alternate embodiment of the invention, a method is disclosed for controlling the spacing between the base ohmic metal and an emitter ohmic metal.
摘要翻译：一种用于控制异质结双极晶体管（HBT）的发射极台面和基极欧姆金属之间的间隔以获得具有低寄生基极电阻的相对高增益（β）的方法。在第一种方法中，在发射极，基极和集电极层在衬底上外延生长之后，牺牲层被沉积在发射极层的顶部。使用常规光刻技术将发射极台面与光刻胶图案化。随后，蚀刻牺牲层以产生底切。然后刻蚀发射极层，并在用于构成发射极台面的第一光刻胶以及整个器件上涂敷光刻胶。使用用于剥离金属化的传统工艺来图案化顶部光致抗蚀剂层，使得最终抗蚀剂轮廓具有凹入斜率。基础欧姆金属被沉积，然后通过溶解第二层光刻胶以及发射极台面上的原始光刻胶而被剥离。使用各向同性蚀刻来剥离牺牲层，留下围绕发射极台面的基极欧姆金属区域，其间距由牺牲层的初始底切决定。在本发明的一个替代实施例中，公开了一种用于控制基极欧姆金属与发射极欧姆金属之间的间隔的方法。

23. 发明授权

EP0424100B1 Method of fabricating a heterojunction bipolar transistor 失效
标题翻译：制造异质结双极晶体管的方法
公开(公告)号：EP0424100B1
公开(公告)日：1998-01-07
申请号：EP90311331.4
申请日：1990-10-16
申请人： MOTOROLA, INC.
发明人： Huang, Jenn-Hwa , Mang, Luke
IPC分类号： H01L21/331
CPC分类号： H01L29/66318 , H01L21/28 , Y10S148/011 , Y10S148/072

24. 发明授权

EP0558100B1 Bipolar transistor 失效
标题翻译：双极晶体管
公开(公告)号：EP0558100B1
公开(公告)日：1996-12-04
申请号：EP93107043.7
申请日：1987-03-31
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Inada, Masanori , Eda, Kazuo , Ota, Yorito , Nakagawa, Atsushi , Yanagihara, Manabu
IPC分类号： H01L29/08 , H01L29/732 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/0804 , H01L29/41708 , H01L29/7371 , Y10S148/01 , Y10S148/072

25. 发明公开

EP0670592A3 Semiconductor devices and their manufacture utilizing crystal orientation dependence of doping 失效
标题翻译：半导体器件和使用晶体取向取决于约会意识及其制备方法。
公开(公告)号：EP0670592A3
公开(公告)日：1995-12-20
申请号：EP95301369.5
申请日：1995-03-03
申请人： FUJITSU LIMITED
发明人： Kondo, Makoto, c/o Fujitsu Ltd. , Anayama, Chikashi, c/o Fujitsu Ltd. , Shoji, Hajime, c/o Fujitsu Ltd.
IPC分类号： H01L21/331 , H01L29/04 , H01S3/19 , H01L21/335 , H01L21/205
CPC分类号： H01S5/3202 , B82Y20/00 , H01L21/02395 , H01L21/0243 , H01L21/02433 , H01L21/02463 , H01L21/02494 , H01L21/02505 , H01L21/02516 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/045 , H01L29/66318 , H01L29/66462 , H01S5/183 , H01S5/18352 , H01S5/2235 , H01S5/2237 , H01S5/2238 , H01S5/305 , H01S5/3077 , H01S5/3081 , H01S5/34326 , H01S2304/04
摘要： Orientation dependence of C doping during growth is used to make
a heavily doped C base for Hetero function bipolar transitor
a very pure AIIIBV layer (nor contaminated by C) for HEMT
a lateral n-p function on a stepped substrate
a laser using this lateral function.

26. 发明公开

EP0678906A2 Method of self aligning an emitter contact in a heterojunction bipolar transistor 失效
标题翻译： Verfahren zur Selbstausrichtung vom Emitter-Kontakt eines bipolaren Transistors mitHeteroübergang。
公开(公告)号：EP0678906A2
公开(公告)日：1995-10-25
申请号：EP95105735.5
申请日：1995-04-18
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Morris, Francis , Yang, Jau-Yuann , Plumton, Donald L. , Yuan, Han Tzong
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/7371 , Y10S148/011 , Y10S148/072
摘要： A method of self aligning an emitter contact includes forming a base layer (18) on a portion of a collector layer (16). An interface layer (22) is formed on the base layer (18) such that a portion of the base layer (18) remains exposed. An emitter layer (24) is formed on the collector layer (16), the interface layer (22), and the exposed portion of the base layer (18). An emitter cap layer (26) is formed on the emitter layer (24) over the previously exposed area of the base layer (18). An insulating layer (28) is formed on the interface layer (22). An emitter contact (36) is formed on the emitter cap layer (26) at the previously exposed area of the base layer (18). The insulating layer (28) isolates the emitter contact (36) from the base layer (18) and a subsequently formed base contact (38). The insulating layer (28) ensures isolation between the emitter contact (36) and the base contact (38) despite misalignment of the emitter contact (36) during formation.
摘要翻译：自发对准发射体接触的方法; （a）在集电体层的一部分上形成第一导电类型的基底层; （b）在底层上形成界面层，使部分露出; （c）在盒层上形成第二导电类型的发射极层; （d）在发射极上形成第二类型的发射极盖层; （e）在界面层上形成绝缘层; （f）在盖层上形成发射极接触并与发射极帽和绝缘层的部分重叠; 和（g）通过绝缘层和界面层形成盒接触，以连接到箱层。还要求保护的是（i）作为（I）的方法，其中层被生长和蚀刻; 和（ii）使用如上所述的自对准的方法形成异质结双极晶体管的方法。

27. 发明公开

EP0670592A2 Semiconductor devices and their manufacture utilizing crystal orientation dependence of doping 失效
标题翻译：半导体器件和使用晶体取向取决于约会意识及其制备方法。
公开(公告)号：EP0670592A2
公开(公告)日：1995-09-06
申请号：EP95301369.5
申请日：1995-03-03
申请人： FUJITSU LIMITED
发明人： Kondo, Makoto, c/o Fujitsu Ltd. , Anayama, Chikashi, c/o Fujitsu Ltd. , Shoji, Hajime, c/o Fujitsu Ltd.
IPC分类号： H01L21/331 , H01L29/04 , H01S3/19 , H01L21/335 , H01L21/205
CPC分类号： H01S5/3202 , B82Y20/00 , H01L21/02395 , H01L21/0243 , H01L21/02433 , H01L21/02463 , H01L21/02494 , H01L21/02505 , H01L21/02516 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/045 , H01L29/66318 , H01L29/66462 , H01S5/183 , H01S5/18352 , H01S5/2235 , H01S5/2237 , H01S5/2238 , H01S5/305 , H01S5/3077 , H01S5/3081 , H01S5/34326 , H01S2304/04
摘要： Orientation dependence of C doping during growth is used to make
a heavily doped C base for Hetero function bipolar transitor
a very pure AIIIBV layer (nor contaminated by C) for HEMT
a lateral n-p function on a stepped substrate
a laser using this lateral function.
摘要翻译：生长过程中掺杂C的取向依赖性用于制造异质功能双极转变器的重掺杂C碱基非常纯的A 乙层（也被C污染），用于HEMT横向NP功能上的台阶的衬底一激光使用该横向功能。

28. 发明公开

EP0621641A2 A heterojunction bipolar transistor and a production method thereof 失效
标题翻译： Heteroübergang-Bipolartransistor和Verfahren zur Herstellung。
公开(公告)号：EP0621641A2
公开(公告)日：1994-10-26
申请号：EP94105636.8
申请日：1994-04-12
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Shimura, Teruyuki, c/o Mitsubishi Denki K. K. , Sakai, Masayuki, c/o Mitsubishi Denki K.K.
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/66318 , H01L29/41708 , H01L29/7371
摘要： A heterojunction bipolar transistor includes a collector contact layer (15), a collector layer (14), a base layer (13), and an emitter layer (12) laminated in this order on the front surface of a compound semiconductor substrate (16), a collector electrode (19) disposed on the collector contact layer (15), a base electrode (18) disposed on the base layer (13) , an emitter electrode (17) disposed on the emitter contact layer (11), and an insulating film (21) produced on the collector electrode (19) and the base electrode (18) burying those electrodes with the front surface thereof being flat. The front surface of the emitter electrode (17) positioned uppermost among surfaces of the three electrodes is on the same plane as the flattened front surface of the insulating film and a wiring is directly produced on the emitter electrode. Thus, this HBT has no step difference between etched surfaces, and the wiring is produced by repeating sputtering of Ti/Au and Ar⁺ ion-milling. Therefore, the wiring for the emitter electrode (17) can be formed easily and minutely at high preciseness. In addition, the collector electrode (19) is produced by evaporation and lift-off after required portions of the base layer and the collector layer are removed by dry-etching and a little wet-etching, so that the collector electrode (19) can be produced with generating no burr.
摘要翻译：异质结双极晶体管包括在化合物半导体衬底的前表面上依次层叠的集电极接触层，集电极层，基极层和发射极层，设置在集电极层上的集电极，设置在集电极层上的基极基底层，设置在发射极层上的发射极，以及在集电极和基极上制作的绝缘膜，埋入其前表面的那些电极。位于三个电极表面之间最上方的发射电极的前表面与绝缘膜的平坦化前表面在同一平面上，并且在发射极电极上直接产生布线。因此，该HBT在蚀刻表面之间没有差别，并且通过重复Ti / Au和Ar +离子研磨的溅射来制造布线。因此，发射电极的布线可以容易且精细地精确地形成。此外，通过干蚀刻和少量湿法蚀刻除去基底层和集电体层的所需部分之后，通过蒸发和剥离来制造集电极，使得集电极可以不产生毛刺。

29. 发明公开

EP0601901A1 Procédé de gravure d'une hétérostructure de matériaux du groupe III-V 失效
标题翻译：用于蚀刻的III-V族材料的异质结构。
公开(公告)号：EP0601901A1
公开(公告)日：1994-06-15
申请号：EP93402671.7
申请日：1993-10-29
申请人： THOMSON-CSF
发明人： Delage, Sylvain, Thomson-CSF , Blanck, Hervé, Thomson-CSF , Cassette, Simone Thomson-CSF
IPC分类号： H01L21/331 , H01L21/28 , H01L21/306
CPC分类号： H01L29/66318 , H01L21/30612 , H01L21/30621 , H01L21/3081 , H01L29/7371 , Y10S438/978
摘要： Procédé de gravure d'au moins deux couches de matériaux semiconducteurs, de natures différentes, en vue de réaliser un mésa pour l'autoalignement des métallisations d'un transistor.
L'hétérojonction doit comporter une première couche (6) d'un matériau contenant As, qui est gravée par gravure ionique réactive, et une deuxième couche (5) d'un matériau contenant P, qui est gravée chimiquement.
Application à la réalisation de transistors verticaux à hétérojonction HBT.

30. 发明公开

EP0562272A3 Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same 失效
标题翻译：具有用于高功率应用设计的发射体的微波异双极双极晶体管及其制造方法
公开(公告)号：EP0562272A3
公开(公告)日：1994-05-25
申请号：EP93102539.9
申请日：1993-02-18
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Liu, William Uei-Chung , Hill, Darrell G.
IPC分类号： H01L29/73 , H01L29/08 , H01L21/331
CPC分类号： H01L29/66318 , H01L29/0817 , Y10S148/072 , Y10S438/936
摘要： Generally, and in one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure comprises an emitter layer 14 of Al x Ga 1-x As, where x > 0.4, abutting a base layer 16 . In another form of the invention a bipolar transistor is disclosed. The transistor comprises a substrate 11 , a subcollector layer 20 , a collector layer 18 , a base layer 16 , and an emitter layer 14 of Al x Ga 1-x As, where x > 0.4. An advantage of the invention is that the AlGaAs layer acts as both a ballast resistor and as the active emitter for the transistor.

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