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1. 发明授权

EP0558100B1 Bipolar transistor 失效
标题翻译：双极晶体管
公开(公告)号：EP0558100B1
公开(公告)日：1996-12-04
申请号：EP93107043.7
申请日：1987-03-31
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Inada, Masanori , Eda, Kazuo , Ota, Yorito , Nakagawa, Atsushi , Yanagihara, Manabu
IPC分类号： H01L29/08 , H01L29/732 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/0804 , H01L29/41708 , H01L29/7371 , Y10S148/01 , Y10S148/072

2. 发明公开

EP0558100A3 Bipolar transistor 失效
标题翻译：双极晶体管
公开(公告)号：EP0558100A3
公开(公告)日：1994-07-13
申请号：EP93107043.7
申请日：1987-03-31
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Inada, Masanori , Eda, Kazuo , Ota, Yorito , Nakagawa, Atsushi , Yanagihara, Manabu
IPC分类号： H01L29/08 , H01L29/732 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/0804 , H01L29/41708 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A dummy emitter (a dummy collector, in inverted type) is formed in the portion corresponding to an emitter (a collector, in inverted type) region, on a multilayer structural material comprising layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of emitter (collector, in inverted type) region is formed, while the dummy emitter (the dummy collector, in inverted type) is inverted into an emitter (a collector, in inverted type) electrode, thereby forming an emitter (a collector, in inverted type) electrode metal layer to cover the whole upper surface of the emitter (the collector, in inverted type). Using thus formed emitter (collector, in inverted type) electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacently to the emitter (the collector, in inverted type).

3. 发明授权

EP0214802B1 Semiconductor device having an abrupt junction and method of manufacturing same using epitaxy 失效
标题翻译：具有破裂连接的半导体器件及其使用外延制造的方法
公开(公告)号：EP0214802B1
公开(公告)日：1991-06-05
申请号：EP86306552.0
申请日：1986-08-22
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Inada, Masanori , Eda, Kazuo , Ota, Yorito
IPC分类号： H01L29/36 , H01L29/72 , H01L21/205
CPC分类号： H01L29/36 , H01L29/7371 , Y10S148/01 , Y10S148/072

4. 发明公开

EP0558100A2 Bipolar transistor 失效
标题翻译：双极晶体管
公开(公告)号：EP0558100A2
公开(公告)日：1993-09-01
申请号：EP93107043.7
申请日：1987-03-31
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Inada, Masanori , Eda, Kazuo , Ota, Yorito , Nakagawa, Atsushi , Yanagihara, Manabu
IPC分类号： H01L29/08 , H01L29/732 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/0804 , H01L29/41708 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A dummy emitter (a dummy collector, in inverted type) is formed in the portion corresponding to an emitter (a collector, in inverted type) region, on a multilayer structural material comprising layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of emitter (collector, in inverted type) region is formed, while the dummy emitter (the dummy collector, in inverted type) is inverted into an emitter (a collector, in inverted type) electrode, thereby forming an emitter (a collector, in inverted type) electrode metal layer to cover the whole upper surface of the emitter (the collector, in inverted type). Using thus formed emitter (collector, in inverted type) electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacently to the emitter (the collector, in inverted type).
摘要翻译：在对应于发射器（集电极，倒置型）区域的部分中，在包括用于形成发射极，基极和集电极的层的多层结构材料上形成虚拟发射极（倒置型的虚设集电极），并将其用作掩模，通过蚀刻暴露外部基极区域，并且形成发射极（集电极，倒置型）区域的突起，而虚拟发射极（反相型虚拟集电极）被反转为发射极（集电极，反转型）电极，从而形成发射极（集电极，倒置型）电极金属层，以覆盖发射体（集电极，倒置型）的整个上表面。使用如此形成的发射极（集电极，倒置型）电极金属层，通过自对准，与发射极（集电极，倒置型）相邻形成基极金属层。

5. 发明公开

EP0387010A3 Hetero-junction bipolar transistor 失效
标题翻译：异相双极晶体管
公开(公告)号：EP0387010A3
公开(公告)日：1990-10-10
申请号：EP90302391.9
申请日：1990-03-06
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Inada, Masanori , Ryoji, Akira
IPC分类号： H01L29/73 , H01L29/62
CPC分类号： H01L29/66318 , H01L21/28 , H01L29/7371
摘要： An object of the present invention is to suppress the surface recombination over the whole area of the external base of a hetero-junction bipolar transistor (HBT), to keep the current gain large, and to reduce the base contact resistance. The HBT of the invention has, as a surface protective film layer, a p-type semiconductor layer which has the higher portential of the energy conduction band than the base layer on an external base outside the junction between the mesa of the n-type emitter layer and the p-type base layer, and a base electrode thereon. Preferably, it has as a base contact layer a p-type semiconductor layer which shows reduced contact resistance with the base electrode on the surface protective layer comprising a p-type semiconductor layer. More preferabiy, it has a structure wherein a base electrode is formed on the base contact layer in contact with the projection part of the emitter electrode to the base contact layers A method of producing this HBT comprises at least the steps of forming an emitter mask on the portion to be an emitter on a multi-layer structure material having an n-type semiconductor layer for forming a collector, a p-type semiconductor layer or forming a base, and an n-type semiconductor layer for forming an emitter in this order from the substrate, and etching by using the emitter mask to form an emitter mesa and to expose a base layer; epitaxially forming as a surface protective film layer a p-type semiconductor layer which show the higher potential of the energy conduction band than the base layer on the external base outside the junction part between the emitter mesa and the base layer by using the emitter mask; and epitaxially forming a base electrode on the p-type surface protective film layer.

6. 发明公开

EP0300803A3 High-frequency bipolar transistor and its fabrication method 失效
标题翻译：高频双极晶体管及其制造方法
公开(公告)号：EP0300803A3
公开(公告)日：1990-05-16
申请号：EP88306729.0
申请日：1988-07-22
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Ota, Yorito , Inada, Masanori , Yanagihara, Manabu
IPC分类号： H01L29/06 , H01L29/73
CPC分类号： H01L29/66318 , H01L29/1004 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A bipolar transistor with improved high-frequency performance is invented. The improvement is attained by eliminating a parasitic base-collector capacitance. The invented transistor is constructed upon a semi-insulating substrate, and wherein a region which underlies an extrinsic base region is semi-insulative such that the extrinsic base region does not substantially overlap the collector contact region and the collector region when viewed in the direction perpendicular to the substrate. Here, it's worthwhile to point out that a portion under the extrinsic base region is made completely semi-insulative down to the substrate. As a result, the transistor has substantially no parasitic base-collector capacitance. Also, a novel method, utilizing a self-align technique which uses a "first mask" for defining a collector contact region and a collector region, a "second mask" for defining an extrinsic base region, and a "third mask" determined by self-alignment using the first and the second mask for defining an emitter region, is disclosed to fabricate the bipolar transistor mentioned above.

7. 发明公开

EP0240307A2 Bipolar transistor and method of producing the same 失效
标题翻译： Bipolarer晶体管和Sein Herstellungsverfahren。
公开(公告)号：EP0240307A2
公开(公告)日：1987-10-07
申请号：EP87302784.1
申请日：1987-03-31
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Inada, Masanori , Eda, Kazuo , Ota, Yorito , Nakagawa, Atsushi , Yanagihara, Manabu
IPC分类号： H01L29/08 , H01L29/73
CPC分类号： H01L29/66318 , H01L29/0804 , H01L29/41708 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A dummy emitter (a dummy collector, in inverted type) is formed in the portion corresponding to an emitter (a collector, in inverted type) region, on a multiplayer structural material comprising layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of emitter (collector, in inverted type) region is formed, while the dummy emitter (the dummy collector, in inverted type) is inverted into an emitter (a collector, in inverted type) electrode, thereby forming an emitter (a collector, in inverted type) electrode metal layer to cover the whole upper surface of the emitter (the collector, in inverted type). Using thus formed emitter (collector, in inverted type) electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacently to the emitter (the collector, in inverted type). In other method, on a multilayer structural material, impurities are introduced outside the portion corresponding to the base region of a bipolar transistor in order to insulate, at least, the layer to form the emitter, the layer to form the base, or at most, these layers and the layer to form the collector, and an extension type dummy emitter (dummy collector, in inverted type) extending from the emitter (collector, in inverted type) portion to the insulating region formed by transforming from the semiconductor material to form the emitter (the collector, in inverted type), and using it as mask, the external base region is exposed to form a projection coupling the emitter region and insulating region, and the dummy emitter (the dummy collector, in inverted type) is inverted to transform into an emitter (a collector, in inverted type) electrode metal layer to cover the whole upper surface of the projection.
摘要翻译：在对应于发射器（集电极，倒置型）区域的部分中，在包括用于形成发射极，基极和集电极的层的多层结构材料上形成虚拟发射极（倒置型的虚设集电极），并将其用作掩模，通过蚀刻暴露外部基极区域，并且形成发射极（集电极，倒置型）区域的突起，而虚拟发射极（反相型虚拟集电极）被反转为发射极（集电极，反转型）电极，从而形成发射极（集电极，倒置型）电极金属层，以覆盖发射体（集电极，倒置型）的整个上表面。使用如此形成的发射极（集电极，倒置型）电极金属层，通过自对准，与发射极（集电极，倒置型）相邻形成基极金属层。在其他方法中，在多层结构材料上，杂质被引入到与双极晶体管的基极区域相对应的部分的外部，以便至少使层形成发射极，形成基底的层或至多绝缘层，这些层和形成集电极的层，以及从发射极（集电极，倒置型）部分延伸到通过从半导体材料转变形成的绝缘区域的延伸型虚拟发射极（倒置型的虚设集电极）发射极（集电极，倒立型），并将其用作掩模，外部基极区域暴露以形成耦合发射极区域和绝缘区域的突起，并且虚拟发射极（倒置型的虚设集电极）被反转转换为发射极（集电极，倒置型）电极金属层，以覆盖投影的整个上表面。

8. 发明授权

EP0206787B1 Heterojunction bipolar transistor and method of manufacturing same 失效
标题翻译：异相双极晶体管及其制造方法
公开(公告)号：EP0206787B1
公开(公告)日：1991-12-18
申请号：EP86304785.8
申请日：1986-06-20
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Eda, Kazuo , Inada, Masanori , Ota, Yorito
IPC分类号： H01L29/72 , H01L29/73
CPC分类号： H01L29/66318 , H01L29/73 , H01L29/7371

9. 发明公开

EP0300803A2 High-frequency bipolar transistor and its fabrication method 失效
标题翻译： Hochfrequenz-Bipolartransistor和dessen Herstellungsverfahren。
公开(公告)号：EP0300803A2
公开(公告)日：1989-01-25
申请号：EP88306729.0
申请日：1988-07-22
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Ota, Yorito , Inada, Masanori , Yanagihara, Manabu
IPC分类号： H01L29/06 , H01L29/73
CPC分类号： H01L29/66318 , H01L29/1004 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A bipolar transistor with improved high-frequency performance is invented. The improvement is attained by eliminating a parasitic base-collector capacitance. The invented transistor is constructed upon a semi-insulating substrate, and wherein a region which underlies an extrinsic base region is semi-insulative such that the extrinsic base region does not substantially overlap the collector contact region and the collector region when viewed in the direction perpendicular to the substrate. Here, it's worthwhile to point out that a portion under the extrinsic base region is made completely semi-insulative down to the substrate. As a result, the transistor has substantially no parasitic base-collector capacitance. Also, a novel method, utilizing a self-align technique which uses a "first mask" for defining a collector contact region and a collector region, a "second mask" for defining an extrinsic base region, and a "third mask" determined by self-alignment using the first and the second mask for defining an emitter region, is disclosed to fabricate the bipolar transistor mentioned above.
摘要翻译：发明了一种具有改善的高频性能的双极晶体管。通过消除寄生基极 - 集电极电容来实现改进。本发明的晶体管构造在半绝缘基板上，并且其中在外部基极区域之下的区域是半绝缘的，使得当沿垂直方向观察时，非本征基极区域基本上不与集电极接触区域和集电极区域重叠到基底。在这里，值得指出的是，外部基极区域下方的部分被完全半绝缘到衬底。结果，晶体管基本上没有寄生基极集电极电容。另外，采用利用“第一掩模”定义集电极接触区域和集电极区域的自对准技术的新颖方法，用于定义非本征基极区域的“第二掩模”和由第二掩模定义的“第三掩模” 公开了使用用于限定发射极区域的第一和第二掩模的自对准，以制造上述的双极晶体管。

10. 发明公开

EP0206787A3 Heterojunction bipolar transistor and method of manufacturing same 失效
标题翻译：异相双极晶体管及其制造方法
公开(公告)号：EP0206787A3
公开(公告)日：1987-11-11
申请号：EP86304785
申请日：1986-06-20
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Eda, Kazuo , Inada, Masanori , Ota, Yorito
IPC分类号： H01L29/72
CPC分类号： H01L29/66318 , H01L29/73 , H01L29/7371
摘要： A heterojunction bipolar transistor having excellent high-frequency characteristics is manufactured by forming a semi-insulating semiconductor layer on a collector (or emitter) layer, removing a part of the semi-insulating semiconductor layer to form a cut portion so that the collector layer is exposed at the cut portion, growing a base layer on the semi-insulating semiconductor layer, on a slant wall of the cut portion and on the exposed part of the collector layer, and growing an emitter (or collector) layer on the base layer. A base layer may be preliminary formed on the semi-insulating semiconductor layer before forming the cut portion. Energy band gap of the emitter is greater than that of the base.

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