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11. 发明公开

EP2453295A1 OPTICAL MODULATOR 有权
标题翻译： OPTISCHER调制器
公开(公告)号：EP2453295A1
公开(公告)日：2012-05-16
申请号：EP10796926.3
申请日：2010-07-09
申请人： Nippon Telegraph And Telephone Corporation
发明人： GOH, Takashi , DOI, Yoshiyuki , MINO, Shinji , TSUZUKI, Ken , YAMAZAKI, Hiroshi , YAMADA, Takashi
IPC分类号： G02F1/035 , G02B6/12 , G02B6/122
CPC分类号： G02F1/0327 , G02B2006/12142 , G02B2006/12159 , G02F1/225 , G02F2201/126 , G02F2203/20 , G02F2203/21
摘要： In a nest MZI modulator in which each arm includes a child MZI, the power consumption in both of a relative phase adjusting section itself for adjusting the relative phase of an optical signal from a child MZI and the driving circuit of a relative phase adjusting section is reduced. The hybrid integrated-type nest MZI modulator of the embodiment 1a is configured so that, instead of placing a relative phase adjusting section in a parent MZI, a bias electrode Bias90° in which an electric field is applied in the same direction (or in an opposite direction) to the polarization direction in both of the upper and lower arms and a GND electrode are placed in each child MZI (see Fig. 4B ). The bias electrode Bias90° and the GND electrode provided in each child MZI constitute the entirety of a relative phase adjusting section. The optical signals are subjected to a phase change after the output from the child MZI (see Fig. 1A ), because such relative phase adjusting section can subject the optical signals of the upper and lower arms of the child MZI to a shift change in the same direction, respectively.
摘要翻译：在其中每个臂包括子MZI的嵌套MZI调制器中，用于调整来自子MZI的光信号的相对相位和相对相位调节部分的驱动电路的相对相位调整部分本身的功耗是降低。实施例1a的混合集成型嵌套MZI调制器被配置为使得不是将母相MZI中的相对相位调整部分放置在相同方向上施加电场的偏置电极Bias90° 相反方向）和上臂和下臂中的偏振方向，并且将GND电极放置在每个子MZI中（参见图4B）。每个子MZI中设置的偏置电极Bias90°和GND电极构成相对相位调整部的整体。光信号在从子MZI（参见图1A）的输出之后经历相变，因为这种相对相位调整部分可以使儿童MZI的上臂和下臂的光信号在相同方向。

12. 发明公开

EP2136238A1 THERMO-OPTICAL PHASE SHIFTER 审中-公开
标题翻译：热电偶PHASENSCHIEBER
公开(公告)号：EP2136238A1
公开(公告)日：2009-12-23
申请号：EP08712130.7
申请日：2008-02-29
申请人： NEC Corporation
发明人： TAKAHASHI, Morio , WATANABE, Shinya
IPC分类号： G02F1/01 , G02B6/122 , G02B6/13
CPC分类号： G02F1/011 , G02B2006/12142 , G02F1/0147 , G02F2203/15 , G02F2203/50
摘要： Provided is a thermo-optical phase shifter including a composite body having an optical waveguide formed by a core and a clad and having a ratio Δ of a difference between a core refractivity and a clad refractivity against the core refractivity which is 4% or above and a heater attached to the optical waveguide. The composite body has: a bridge structure portion arranged along a substrate surface and separate from the substrate surface via a void; and a fixed portion which supports the bridge structure portion with respect to the substrate and is continuous to the both ends of the bridge structure portion. The bridge structure has a half-circle-arc shape in the plane along the surface of the substrate.
摘要翻译：本发明提供一种热光学移相器，其包括具有由芯和包层形成的光波导的复合体，所述光波导的芯折射率和包层折射率与芯折射率的差为4％以上，连接到光波导的加热器。所述复合体具有：沿着基板表面布置并经由空隙与所述基板表面分离的桥结构部分; 以及固定部分，其相对于基板支撑桥结构部分，并且与桥结构部分的两端连续。桥结构沿着衬底的表面在平面中具有半圆弧形状。

13. 发明公开

EP1605303A4 OPTICAL SWITCH, OPTICAL MODULATOR AND VARIABLE WAVELENGTH FILTER 有权
标题翻译：光开关，光调制器和可变WELLENLûNGEFILTER
公开(公告)号：EP1605303A4
公开(公告)日：2008-01-23
申请号：EP04721661
申请日：2004-03-18
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TOYOTA SEIJI , FUJIURA KAZUO , SASAURA MASAHIRO , ENBUTSU KOJI , SHIMOKOZONO MAKOTO , IMAI TADAYUKI , TATE AKIYUKI , MATSUURA TOURU , KURIHARA TAKASHI , FUSHIMI HIROSHI
IPC分类号： G02F1/313 , G02F1/035
CPC分类号： G02F1/3551 , G02B6/12011 , G02B6/12023 , G02B2006/12142 , G02B2006/12145 , G02F1/225 , G02F1/3136 , G02F1/3137 , G02F1/365 , G02F2001/212 , G02F2201/124 , G02F2203/50
摘要： A Mach-Zehnder type optical modulator comprises at least one input waveguide, one output waveguide, a 3-dB coupler connected to said input waveguide, a 3-dB coupler connected to said output waveguide, and two three-dimensional optical waveguides connecting said two 3-dB couplers together, wherein a material for said waveguides is a crystal material including KTa 1-x Nb x O 3 (0

14. 发明授权

EP1224491B1 TITANIUM-INDIFFUSION WAVEGUIDES AND METHODS OF FABRICATION 有权
标题翻译： OPTIC扩散钛和相关方法
公开(公告)号：EP1224491B1
公开(公告)日：2005-07-27
申请号：EP99965790.1
申请日：1999-11-10
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： BURROWS, Lee, J. , BRIDGES, William, B.
IPC分类号： G02B6/12
CPC分类号： G02B6/1342 , G02B2006/12142
摘要： A method for fabricating titanium-indiffusion waveguides in optical modulators and other optical waveguide devices includes disposing titanium strips in a waveguide pattern on the surface of a crystalline substrate, such as lithium niobate or lithium tantalate, and indiffusing the titanium atoms into the crystalline substrate by creating a flowing, wet deuterium oxide (D2O) environment, raising the temperature in the D2O environment to a temperature within the range of 900 degrees Celsius and 1100 degrees Celsius and maintaining the temperature for a period of time that will allow for the necessary indiffusion of titanium to occur within the crystal substrate. The Ti-indiffusion waveguides that result from performing the Ti-indiffusion process in a flowing, wet D2O environment include crystalline substrates, such as lithium niobate or lithium tantalate, titanium strips disposed in a waveguide pattern on the crystalline substrate and a diffusion region resulting from high temperature processing in a flowing, wet D2O environment.

15. 发明公开

EP1346242A1 DISPOSITIF A GUIDE D'ONDES OPTIQUES OPTIQUEMENT ACTIF COMPORTANT UN CANAL SUR UN SUBSTRAT OPTIQUE 审中-公开
标题翻译：与通道上的光学基板光纤有源器件
公开(公告)号：EP1346242A1
公开(公告)日：2003-09-24
申请号：EP01990613.0
申请日：2001-12-21
申请人： Ion Beam Services
发明人： TISSERAND, Stéphane , ROUX, Laurent
IPC分类号： G02B6/12 , G02F1/01 , G02F1/313 , H01S3/063
CPC分类号： G02F1/011 , G02B6/122 , G02B6/1347 , G02B6/30 , G02B2006/1208 , G02B2006/121 , G02B2006/12142 , G02F1/0147 , G02F2001/0113 , H01S5/204 , H01S5/223 , H01S5/50
摘要： The invention concerns an optically active device comprising an optical waveguide core on an optical substrate (11, 15, 20) and a control element (32-33, 37, 40). The core comprises a channel (12, 17, 25, 35-36, 38-39) and at least an active layer (13, 18, 22) arranged on said channel, the refractive index of the channel and that of the active layer being higher than that of the substrate. The optical substrate (11, 15, 20) has a mobile ion concentration less than 0.01 %. Advantageously, the device further comprises a covering layer (14, 19, 23) arranged on the active layer (13, 18, 22), the index of said covering layer being less than that of the active layer and of the channel. The invention also concerns a method for making said device.

16. 发明公开

EP1137963A2 RESONANT OPTICAL WAVE POWER CONTROL DEVICES AND METHODS 审中-公开
标题翻译： DEVICES AND METHOD FOR谐振光功率控制
公开(公告)号：EP1137963A2
公开(公告)日：2001-10-04
申请号：EP99969270.0
申请日：1999-12-07
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： VAHALA, Kerry, J. , YARIV, Amon
IPC分类号： G02F1/01 , H01P7/10 , G02B6/28
CPC分类号： G02B6/29343 , B82Y20/00 , G02B6/12007 , G02B6/29395 , G02B2006/12142 , G02B2006/12145 , G02F1/011 , G02F1/0118 , G02F1/01708 , G02F1/225 , G02F2203/48
摘要： An optical wave power control device and method enables signal control, such as modulation and switching, to be affected within an uninterrupted propagation element (12, 18), e.g. an optical fiber or planar waveguide. The propagation element is configured such that a portion of its wave guided power encompasses the exterior surface of the element, intercepting the periphery of an adjacent high Q volumetric resonator (20). Power of a chosen resonant wavelength is coupled into the resonator (20), where it circulates with very low loss in accordance with the principles of a whispering gallery mode device, and returns energy to the propagation element (18). By introducing loss within the resonator (20), the propagated power can be varied between substantially full and substantially zero amplitudes. Loss factors can be maintained such that the resonator is overcoupled, i.e. parasitic losses are less than coupling losses, and a critical coupling condition exists in which a small swing in the control effect causes a disproportionate change in the optical output signal.

17. 发明公开

EP0952470A2 A method of manufacturing a semiconductor optical waveguide array and an array-structured semiconductor optical device 审中-公开
标题翻译：一种用于生产光多半导体光波导和多构造的半导体光学器件过程
公开(公告)号：EP0952470A2
公开(公告)日：1999-10-27
申请号：EP99107362.8
申请日：1999-04-22
申请人： NEC CORPORATION
发明人： Kudo, Koji
IPC分类号： G02B6/132 , H01S3/25 , H01S3/025
CPC分类号： H01S5/026 , G02B6/12004 , G02B2006/12107 , G02B2006/12121 , G02B2006/12142 , G02B2006/12164 , G02B2006/12195 , H01S5/0265 , H01S5/06256 , H01S5/06258 , H01S5/2077 , H01S5/4025 , H01S5/4087 , H01S5/50
摘要： In a method of manufacturing a semiconductor optical waveguide array in an ultra-high integration, the device yield per wafer is considerably increased and uniform and improved characteristics are obtained. In this method, there is manufactured a semiconductor optical waveguide array including a plurality of optical waveguides in an array structure in stripe-shaped growth regions enclosed by dielectric thin films on a substrate. The waveguides are fabricated through a selective crystal growth process and include a semiconductor multilayer structure including a quantum well layer or a semiconductor multilayer structure including a bulk layer. Namely, there is formed a plurality of stripe-shaped growth regions elongated parallel to each other, the regions being enclosed with a dielectric thin film. In each growth region, a semiconductor multilayer structure is selectively grown by metallo-organic vapor phase epitaxy (MOVPE). In the selective growth, the growth regions are parallel to each other with an interval therebetween, the interval being less than a diffusion length of a source material in a reactive tube during the crystal growth. Assuming that the dielectric thin film arranged between the respective growth regions has a width Wa and a first outer-most dielectric thin film and a second outer-most dielectric thin film arranged respectively outside of outer-most ones of the growth regions respectively have widths W m1 and W m2 , there is satisfied a relationship of W m1 > Wa and W m2 > Wa.

18. 发明公开

EP0689230A2 Method for lattice matched growth of semiconductor layers 失效
标题翻译： Verfahren zum gitterangepassten Aufwachsen von Halbleiterschichten
公开(公告)号：EP0689230A2
公开(公告)日：1995-12-27
申请号：EP95304091.2
申请日：1995-06-14
申请人： AT&T Corp.
发明人： Cunningham, John Edward , Pathak, Rajiv Nath , Goossen, Keith Wayne
IPC分类号： H01L21/20 , G02F1/015
CPC分类号： G02F1/017 , B82Y20/00 , G02B2006/12142 , G02F2001/01766 , G02F2202/102 , G02F2203/02 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , Y10S438/938
摘要： An in-situ method is disclosed for highly accurate lattice matching using reflection high energy electron diffraction dynamics. The method includes the steps of providing a substrate of a first semiconductor material and initiating growth of a second semiconductor material thereon. The oscillation amplitude of intensity I of waveform cycles is monitored using reflection high energy electron diffraction. A maximum intensity I + and a minimum intensity I - is determined over a predetermined number of waveform cycles. The intensity drop ΔI from initial reflectivity to minimum reflectivity of the waveform cycles is determined and a normalized figure of merit FM is calculated for the predetermined number of waveform cycles using the relationship: FM = Σ(I + - I - ) ΔI
The fluxes of the second semiconductor material are then adjusted to maximize FM and optimize lattice matching.
A multiple quantum well light modulator is also provided including a semiconductor substrate of InP, a multiple quantum well region, disposed above the InP substrate, composed of InGaAs and having a thickness of about 4 µm. The modulator is characterized by a lattice mismatch of less than 2 x 10 -4 .
摘要翻译：公开了一种使用反射高能电子衍射动力学进行高精度晶格匹配的现场方法。该方法包括以下步骤：提供第一半导体材料的衬底并且在其上起始第二半导体材料的生长。使用反射高能电子衍射监测波形周期的强度I的振荡幅度。在预定数量的波形周期内确定最大强度I +和最小强度I 1。确定从初始反射率到波形周期的最小反射率的强度降DELTA I，并且使用以下关系计算预定数量的波形周期的归一化品质因数FM：然后调整第二半导体材料的通量以最大化FM并优化晶格匹配。还提供了一种多量子阱光调制器，其包括设置在InP衬底上方的InGaAs并具有约4μm厚度的InP的多个量子阱区的半导体衬底。调制器的特征在于小于2×10 -4的晶格失配。

19. 发明公开

EP2485076A4 OPTICAL WAVEGUIDE DEVICE 有权转让
公开(公告)号：EP2485076A4
公开(公告)日：2017-12-27
申请号：EP10820456
申请日：2010-09-24
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： OKAMURA MIKI , SHIMIZU RYO , ISHIKAWA YASUHIRO
IPC分类号： G02B6/122 , G02B6/12 , G02B6/125 , G02B6/27 , G02F1/035
CPC分类号： G02B6/125 , G02B6/2713 , G02B6/2773 , G02B2006/12142 , G02F1/2255
摘要： Provided is a small optical waveguide device with little reflected light, the optical waveguide device including: an optical waveguide element of which a first output waveguide is inclined with respect to an output end face and a second output waveguide is inclined with respect to both the first output waveguide and the output end face; and a lens that allows beams respectively output from the first and second output waveguides to be parallel to each other.

20. 发明公开

EP3221729A4 PLANAR LIGHTWAVE CIRCUIT ACTIVE CONNECTOR 审中-公开
公开(公告)号：EP3221729A4
公开(公告)日：2017-12-06
申请号：EP15860742
申请日：2015-11-19
申请人： KAIAM CORP
发明人： SOLDANO LUCAS , PEZESHKI BARDIA , HEANUE JOHN
IPC分类号： G02B6/30 , G02B6/12 , G02B6/293 , G02B6/34 , G02B6/42 , G02B6/43
CPC分类号： H04J14/0212 , G02B6/12021 , G02B6/1223 , G02B6/124 , G02B6/2938 , G02B6/30 , G02B6/34 , G02B6/4215 , G02B2006/12038 , G02B2006/12061 , G02B2006/12142 , H04Q11/0005 , H04Q2011/0016 , H04Q2011/0032
摘要： An assembly of waveguide wavelength multiplexers and demultiplexers, together with continuous wave (CW) laser transmitters that interface to grating couplers on a silicon photonics chip, providing CW sources, multiplexed output and optionally multiplexed input, all using a single photonic lightwave circuit (PLC).

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