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1. 发明公开

EP0952470A3 A method of manufacturing a semiconductor optical waveguide array and an array-structured semiconductor optical device 审中-公开
标题翻译：一种用于生产光多半导体光波导和多构造的半导体光学器件过程
公开(公告)号：EP0952470A3
公开(公告)日：2004-01-14
申请号：EP99107362.8
申请日：1999-04-22
申请人： NEC CORPORATION
发明人： Kudo, Koji
IPC分类号： G02B6/132 , H01S3/25 , H01S3/025 , G02B6/12
CPC分类号： H01S5/026 , G02B6/12004 , G02B2006/12107 , G02B2006/12121 , G02B2006/12142 , G02B2006/12164 , G02B2006/12195 , H01S5/0265 , H01S5/06256 , H01S5/06258 , H01S5/2077 , H01S5/4025 , H01S5/4087 , H01S5/50
摘要： In a method of manufacturing a semiconductor optical waveguide array in an ultra-high integration, the device yield per wafer is considerably increased and uniform and improved characteristics are obtained. In this method, there is manufactured a semiconductor optical waveguide array including a plurality of optical waveguides in an array structure in stripe-shaped growth regions enclosed by dielectric thin films on a substrate. The waveguides are fabricated through a selective crystal growth process and include a semiconductor multilayer structure including a quantum well layer or a semiconductor multilayer structure including a bulk layer. Namely, there is formed a plurality of stripe-shaped growth regions elongated parallel to each other, the regions being enclosed with a dielectric thin film. In each growth region, a semiconductor multilayer structure is selectively grown by metallo-organic vapor phase epitaxy (MOVPE). In the selective growth, the growth regions are parallel to each other with an interval therebetween, the interval being less than a diffusion length of a source material in a reactive tube during the crystal growth. Assuming that the dielectric thin film arranged between the respective growth regions has a width Wa and a first outer-most dielectric thin film and a second outer-most dielectric thin film arranged respectively outside of outer-most ones of the growth regions respectively have widths W m1 and W m2 , there is satisfied a relationship of W m1 > Wa and W m2 > Wa.
摘要翻译：在超高集成制造在半导体光波导阵列的方法，每个晶片的器件的成品率显着增加和均匀的和改进的特性得到。在该方法中，有制造的半导体光波导阵列包括通过在基底电介质薄膜封闭条形生长区域光波导在阵列中的多个，结构。波导通过选择性晶体生长工艺制造，包括半导体多层结构，包括一量子阱层或半导体多层结构，包括一个主体层。即，形成有平行于细长海誓山盟条形生长区域的复数，所述区域被封装有介电薄膜。在每个生长区域，半导体多层结构被选择性地通过金属有机气相外延（MOVPE）生长。在选择性生长中，生长区平行于海誓山盟与之间的间隔有，间隔比在反应管中的晶体生长期间的源材料的扩散长度以下。假设没有电介质薄膜的respectivement生长区之间设置具有宽度Wa和第一最外面的电介质薄膜和第二最外面的电介质薄膜分别最外层的生长区域中的一些的外部分别设置有宽度W m1到和值Wm2，有满足W m1到的关系> Wa和值Wm2>娲。

2. 发明公开

EP1022827A3 Semiconductor laser device and fabrication method 审中-公开
标题翻译：半导体激光器件和制造方法
公开(公告)号：EP1022827A3
公开(公告)日：2000-11-22
申请号：EP00400159.0
申请日：2000-01-21
申请人： NEC CORPORATION
发明人： Yokoyama, Yoshitaka , Kudo, Koji , Tsuji, Masayoshi
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/0265 , H01S5/2077 , H01S5/2215 , H01S5/2272 , H01S5/4031 , H01S5/4087
摘要： A semiconductor photonic element is provided, which realize low threshold current and satisfactory characteristics in the high temperatures and/or high output operating condition. This element is comprised of (a) a semiconductor substrate; (b) a mesa structure formed on a first surface of the substrate to extend in a specific direction; the mesa structure including an active layer and a pair of p- and n-type cladding layers located respectively at top and bottom sides of the active layer, forming a double heterojunction; (c)a current-constricting structure for constricting an injection current formed at each side of the mesa structure to expose a top of the mesa structure from the current-constricting structure; the current-constricting structure comprising a first current-blocking part and a second current-blocking part; the first current-blocking part having a dielectric current-blocking layer that extends to the mesa structure; the dielectric current-blocking layer being contacted with top edges of the mesa structure; the second current-blocking part having a semiconductor current-blocking layer; and (d) a semiconductor burying layer formed to cover the mesa structure and the multilayer current-constricting structure; the semiconductor burying layer being contacted with the top of the mesa structure.
摘要翻译：提供了一种半导体光子元件，其在高温和/或高输出操作条件下实现低阈值电流和令人满意的特性。该元件包括（a）半导体衬底; （b）台面结构，形成在基板的第一表面上以沿特定方向延伸; 所述台面结构包括有源层和分别位于所述有源层的顶侧和底侧的一对p型和n型包覆层，从而形成双异质结; （c）电流收缩结构，用于收缩在台面结构的每一侧形成的注入电流，以从电流收缩结构暴露台面结构的顶部; 所述电流约束结构包括第一电流阻断部分和第二电流阻断部分; 所述第一电流阻挡部分具有延伸到所述台面结构的电介质电流阻挡层; 电介质电流阻挡层与台面结构的顶部边缘接触; 所述第二电流阻挡部件具有半导体电流阻挡层; （d）形成为覆盖台面结构和多层限流结构的半导体掩埋层; 该半导体掩埋层与台面结构的顶部接触。

3. 发明授权

EP0836255B1 Laser diode array and fabrication method thereof 失效
标题翻译：激光二极管阵列及其制造方法
公开(公告)号：EP0836255B1
公开(公告)日：2002-01-02
申请号：EP97117422.2
申请日：1997-10-08
申请人： NEC CORPORATION
发明人： Yamaguchi, Masayuki , Yamazaki, Hiroyuki , Kudo, Koji
IPC分类号： H01S5/40 , H01S5/026
CPC分类号： H01S5/0265 , H01S5/12 , H01S5/1215 , H01S5/2077 , H01S5/2272 , H01S5/4031 , H01S5/4087

4. 发明公开

EP0813252A1 Method of manufacturing a multiple layer semiconductor structure 失效
标题翻译： Verfahren zur Herstellung einer Mehrschichthalbleiterstruktur
公开(公告)号：EP0813252A1
公开(公告)日：1997-12-17
申请号：EP97304030.6
申请日：1997-06-10
申请人： NEC CORPORATION
发明人： Kudo, Koji
IPC分类号： H01L33/00 , H01L31/18 , H01S3/19 , H01L31/0352 , H01L21/205 , H01S3/025 , G02F1/015 , G02B6/12
CPC分类号： B82Y20/00 , G02B6/131 , G02B2006/12195 , H01L31/035236 , H01L33/0062 , H01S5/2077 , H01S5/3428
摘要： While compound semiconductor materials are being selectively grown on an open stripe area of a compound semiconductor substrate for forming a multiple quantum well structure (13), one of the depositing time and the gas flow rate is gradually decreased from the bottom of the multiple quantum well structure toward the top thereof. Although the top surface area (13b) of the multiple quantum well structure is decreased from the bottom toward the top, the component layers (13a) of the multiple quantum well structure are regulated to a target thickness, and the half band width of photoluminescence spectrum is improved.
摘要翻译：虽然化合物半导体材料被选择性地生长在用于形成多量子阱结构（13）的化合物半导体衬底的开口区域上，但是沉积时间和气体流速之一从多量子阱的底部逐渐减小结构朝向其顶部。尽管多量子阱结构的顶表面区域（13b）从底部朝向顶部减小，但是多量子阱结构的部件层（13a）被调节到目标厚度，并且光致发光光谱的半带宽改进了

5. 发明公开

EP1022827A2 Semiconductor laser device and fabrication method 审中-公开
标题翻译： Photonisches Halbleiterement和Herstellungsverfahren
公开(公告)号：EP1022827A2
公开(公告)日：2000-07-26
申请号：EP00400159.0
申请日：2000-01-21
申请人： NEC CORPORATION
发明人： Yokoyama, Yoshitaka , Kudo, Koji , Tsuji, Masayoshi
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/0265 , H01S5/2077 , H01S5/2215 , H01S5/2272 , H01S5/4031 , H01S5/4087
摘要： A semiconductor photonic element is provided, which realize low threshold current and satisfactory characteristics in the high temperatures and/or high output operating condition. This element is comprised of (a) a semiconductor substrate; (b) a mesa structure formed on a first surface of the substrate to extend in a specific direction; the mesa structure including an active layer and a pair of p- and n-type cladding layers located respectively at top and bottom sides of the active layer, forming a double heterojunction; (c)a current-constricting structure for constricting an injection current formed at each side of the mesa structure to expose a top of the mesa structure from the current-constricting structure; the current-constricting structure comprising a first current-blocking part and a second current-blocking part; the first current-blocking part having a dielectric current-blocking layer that extends to the mesa structure; the dielectric current-blocking layer being contacted with top edges of the mesa structure; the second current-blocking part having a semiconductor current-blocking layer; and (d) a semiconductor burying layer formed to cover the mesa structure and the multilayer current-constricting structure; the semiconductor burying layer being contacted with the top of the mesa structure.
摘要翻译：提供了一种半导体光子元件，其在高温和/或高输出操作条件下实现低阈值电流和令人满意的特性。该元件由（a）半导体衬底构成; （b）形成在所述基板的第一表面上以沿特定方向延伸的台面结构; 所述台面结构包括分别位于所述有源层的顶侧和底侧的有源层和一对p型和n型覆层，形成双异质结; （c）用于收缩形成在台面结构的每一侧的注入电流的电流收缩结构，以从电流收缩结构露出台面结构的顶部; 电流收缩结构包括第一电流阻挡部分和第二电流阻挡部分; 所述第一电流阻挡部分具有延伸到所述台面结构的介电阻流层; 所述介质电流阻挡层与所述台面结构的顶部边缘接触; 所述第二电流阻挡部分具有半导体电流阻挡层; 以及（d）形成为覆盖所述台面结构和所述多层电流收缩结构的半导体掩埋层; 半导体掩埋层与台面结构的顶部接触。

6. 发明公开

EP0952470A2 A method of manufacturing a semiconductor optical waveguide array and an array-structured semiconductor optical device 审中-公开
标题翻译：一种用于生产光多半导体光波导和多构造的半导体光学器件过程
公开(公告)号：EP0952470A2
公开(公告)日：1999-10-27
申请号：EP99107362.8
申请日：1999-04-22
申请人： NEC CORPORATION
发明人： Kudo, Koji
IPC分类号： G02B6/132 , H01S3/25 , H01S3/025
CPC分类号： H01S5/026 , G02B6/12004 , G02B2006/12107 , G02B2006/12121 , G02B2006/12142 , G02B2006/12164 , G02B2006/12195 , H01S5/0265 , H01S5/06256 , H01S5/06258 , H01S5/2077 , H01S5/4025 , H01S5/4087 , H01S5/50
摘要： In a method of manufacturing a semiconductor optical waveguide array in an ultra-high integration, the device yield per wafer is considerably increased and uniform and improved characteristics are obtained. In this method, there is manufactured a semiconductor optical waveguide array including a plurality of optical waveguides in an array structure in stripe-shaped growth regions enclosed by dielectric thin films on a substrate. The waveguides are fabricated through a selective crystal growth process and include a semiconductor multilayer structure including a quantum well layer or a semiconductor multilayer structure including a bulk layer. Namely, there is formed a plurality of stripe-shaped growth regions elongated parallel to each other, the regions being enclosed with a dielectric thin film. In each growth region, a semiconductor multilayer structure is selectively grown by metallo-organic vapor phase epitaxy (MOVPE). In the selective growth, the growth regions are parallel to each other with an interval therebetween, the interval being less than a diffusion length of a source material in a reactive tube during the crystal growth. Assuming that the dielectric thin film arranged between the respective growth regions has a width Wa and a first outer-most dielectric thin film and a second outer-most dielectric thin film arranged respectively outside of outer-most ones of the growth regions respectively have widths W m1 and W m2 , there is satisfied a relationship of W m1 > Wa and W m2 > Wa.

7. 发明公开

EP0836255A1 Laser diode array and fabrication method thereof 失效
标题翻译： Laserdioden-Array和Herstellungsverfahren
公开(公告)号：EP0836255A1
公开(公告)日：1998-04-15
申请号：EP97117422.2
申请日：1997-10-08
申请人： NEC CORPORATION
发明人： Yamaguchi, Masayuki , Yamazaki, Hiroyuki , Kudo, Koji
IPC分类号： H01S3/25 , H01S3/025
CPC分类号： H01S5/0265 , H01S5/12 , H01S5/1215 , H01S5/2077 , H01S5/2272 , H01S5/4031 , H01S5/4087
摘要： First to n-th single-axial-mode LDs are arranged on a semiconductor substrate, where n ≥ 2. Each of the first to n-th LDs has a stripe-shaped semiconductor active layer formed on or over the substrate, a stripe-shaped semiconductor guiding layer formed on one side of the active layer, and a stripe-shaped semiconductor cladding layer formed on the other side of the active layer. The guiding layers of the first to n-th LDs have first to n-th diffraction gratings, respectively. The (k + 1)-th period is equal to a sum of the k-th period and an increment, where 1 ≤ k ≤ (n - 1). The active layers of the first to n-th LDs have first to n-th gain peak wavelengths, respectively. The (k + 1)-th gain peak wavelength is equal to a sum of the k-th gain peak wavelength and an increment. The first to n-th LDs have first to n-th oscillation wavelengths with first to n-th wavelength differences from the first to n-th gain peak wavelengths, respectively. The first to n-th wavelength differences are within a specific acceptable range for low threshold currents and low wavelength chirping. The lasing characteristic fluctuation is limited within the acceptable range independent of an oscillation wavelength span of the LDs. The laser array can be integrated with a modulator.
摘要翻译：第一至第n单轴模式LD布置在半导体衬底上，其中n≥2。第一至第n LD中的每一个具有形成在衬底上或衬底上的条形半导体有源层，形成在有源层的一侧上的半导体引导层和形成在有源层的另一侧上的条形半导体包覆层。第一至第n LD的引导层分别具有第一至第n衍射光栅。第（k + 1）个周期等于第k个周期和一个增量的和，其中1≤k≤（n-1）。第一至第nLD的有源层分别具有第一至第n增益峰值波长。第（k + 1）个增益峰值波长等于第k增益峰值波长和增量的和。第一至第n LD分别具有从第一至第n增益峰值波长的第一至第n波长差异的第一至第n振荡波长。对于低阈值电流和低波长啁啾，第一至第n波长差在特定的可接受范围内。激光特性波动被限制在可接受的范围内，与LD的振荡波长跨度无关。激光阵列可以与调制器集成。

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