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11. 发明公开

EP2373060A3 Silicon condenser microphone and manufacturing method 审中-公开
标题翻译： Siliciumkondensatormikrofon und Herstellungsverfahrendafür
公开(公告)号：EP2373060A3
公开(公告)日：2014-05-28
申请号：EP11167778.7
申请日：2005-06-15
申请人： Knowles Electronics, LLC
发明人： Minervini, Anthony D
IPC分类号： H04R19/04 , B81B7/00 , H04R19/00 , H04R19/01 , H04R31/00
CPC分类号： H04R1/2892 , B81B3/0021 , B81B7/0038 , B81B7/0058 , B81B7/0061 , B81B7/0064 , B81B7/007 , B81B2201/0257 , B81B2207/092 , B81C1/00158 , B81C1/00301 , B81C3/00 , H01L21/78 , H01L23/10 , H01L23/15 , H01L2924/0002 , H01L2924/1461 , H04R1/04 , H04R1/222 , H04R3/00 , H04R19/005 , H04R19/016 , H04R19/04 , H04R23/00 , H04R31/006 , H04R2201/003 , H04R2225/49 , H04R2410/03 , Y10T29/49005 , Y10T29/4908 , Y10T29/49798 , H01L2924/00
摘要： A silicon condenser microphone package is disclosed. The silicon condenser microphone package comprises a transducer unit, substrate, and a cover. The substrate includes an upper surface having a recess formed therein. The transducer unit is attached to the upper surface of the substrate and overlaps at least a portion of the recess wherein a back volume of the transducer unit if formed between the transducer unit and the substrate. The cover is placed over the transducer unit and includes an aperture.
摘要翻译：公开了一种硅电容麦克风封装。硅电容麦克风封装包括换能器单元，基板和盖。基板包括其中形成有凹部的上表面。换能器单元附接到基板的上表面并且与凹部的至少一部分重叠，其中如果形成在换能器单元和基板之间，则换能器单元的后部体积。盖子放置在换能器单元上方并包括孔。

12. 发明公开

EP2707899A1 BONDED WAFER STRUCTURES 审中-公开
标题翻译： GEBONDETE WAFERSTRUKTUREN
公开(公告)号：EP2707899A1
公开(公告)日：2014-03-19
申请号：EP11865126.4
申请日：2011-05-09
申请人： Hewlett-Packard Development Company, L.P.
发明人： ALLEY, Rodney L. , MILLIGAN, Donald J.
IPC分类号： H01L27/00 , H01L27/146 , H01L27/20 , H01L21/50
CPC分类号： B81B7/0077 , B81B2207/092 , B81C1/00269 , H01L21/2007 , H01L21/50
摘要： The present disclosure includes bonded wafer structures and methods of forming bonded wafer structures. One example of a forming a bonded wafer structure includes providing a first wafer (202, 302) and a second wafer (204, 304) to be bonded together via a bonding process that has a predetermined wafer gap (216, 316) associated therewith, and forming a mesa (215, 315, 415) on the first wafer (202, 302) prior to bonding the first wafer (202, 302) and the second wafer (204, 304) together, wherein a height (220, 320, 420) of the mesa (215, 315, 415) is determined based on a target element gap (217, 317) associated with the bonded wafer structure.

13. 发明公开

EP2383601A1 Semiconductor device comprising a cavity having a vent hole 有权
标题翻译： Halbleiter mit einem Hohlraum der einBelüftungslochaufweist
公开(公告)号：EP2383601A1
公开(公告)日：2011-11-02
申请号：EP11174118.7
申请日：2009-12-23
申请人： Silex Microsystems AB
发明人： Ebefors, Thorbjörn , Kälvesten, Edvard , Ågren, Peter , Svedin, Niklas
IPC分类号： G02B26/08 , B81C1/00
CPC分类号： G02B26/0833 , B81B7/0006 , B81B7/007 , B81B2207/092 , B81B2207/095 , G02B6/3518 , G02B6/3584 , G02B26/0841 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： A vent hole precursor structure (26) in an intermediate product for a semiconductor device having delicate structures (27,28),
Wherein
said intermediate product has a cavity (21) with a pressure differing from the pressure of the surroundings, said intermediate product comprising a first wafer (20) in which there is formed a depression (21), said first wafer being bonded to a second wafer (22) comprising a device layer (23) from which the structures (27,28) are to be made by etching; and a hole or groove (26) having a predefined depth and extends downwards into the device layer, such that the cavity (21) during etching is opened up before the etching procedure breaks through the device layer (23) forming the structures (27,28).
摘要翻译：一种用于具有精细结构（27,28）的半导体器件的中间产品中的通气孔前体结构（26），其中所述中间产品具有不同于周围压力的压力的空腔（21），所述中间产品包括第一晶片（20），其中形成有凹陷（21），所述第一晶片被结合到第二晶片（22），第二晶片（22）包括器件层（23），结构（27,28）将由器件层腐蚀; 以及具有预定深度并且向下延伸进入器件层的孔或凹槽（26），使得蚀刻过程中的空腔（21）在蚀刻过程突破穿过形成结构（27,21）的器件层（23）之前被打开， 28）。

14. 发明公开

EP2381289A1 MEMS device 审中-公开
标题翻译：微机械
公开(公告)号：EP2381289A1
公开(公告)日：2011-10-26
申请号：EP11174115.3
申请日：2009-12-23
申请人： Silex Microsystems AB
发明人： Ebefors, Thorbjörn , Kälvesten, Edvard , Ågren, Peter , Svedin, Niklas , Ericson, Thomas
IPC分类号： G02B26/08 , H01L21/768 , B81B7/00
CPC分类号： G02B26/0833 , B81B7/0006 , B81B7/007 , B81B2207/092 , B81B2207/095 , G02B6/3518 , G02B6/3584 , G02B26/0841 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
摘要翻译：本发明涉及分层微电子和/或微机械结构，其包括在导电层之间具有绝缘层的至少三个交替导电层。还提供了在第一外层中的通孔，所述通孔包括通过该层由晶片天然材料制成的绝缘导电连接，延伸穿过其它层并在第一外层中延伸到所述通孔中的导电插塞，以便提供通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于将所述插塞与所述选定层中的材料绝缘。它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。该装置具有根据本发明的分层结构。还提供了制造这种分层MEMS结构的方法。

15. 发明公开

EP2067391A1 SUBSTRATE-PENETRATING ELECTRICAL CONNECTIONS 有权
标题翻译：衬底采取紧急电气连接
公开(公告)号：EP2067391A1
公开(公告)日：2009-06-10
申请号：EP07794222.5
申请日：2007-09-04
申请人： NanoSpace AB
发明人： RANGSTEN, Pelle , JOHANSSON, Håkan , BEJHED, Johan
IPC分类号： H05K3/36 , H01L23/48 , H01R12/34
CPC分类号： B82Y15/00 , B64G1/1078 , B64G1/26 , B64G1/401 , B81B7/0006 , B81B2207/092 , B81B2207/096 , F02K9/62 , F02K9/80 , F05D2250/82 , F05D2250/84 , Y10T29/49083 , Y10T29/49099 , Y10T29/49155 , Y10T29/49346 , Y10T29/49718 , Y10T29/49746
摘要： A wafer assembly (30) comprises a substrate (71), in turn comprising a wafer (70) or a stack of wafers. The wafer assembly (30) further comprises an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.

16. 发明公开

EP1998211A3 Methods of fabricating mems with a shaped substrate and devices formed by same 审中-公开
标题翻译：一种用于生产MEMS的具有由此形成的成型基底和设备处理
公开(公告)号：EP1998211A3
公开(公告)日：2009-04-01
申请号：EP08153806.8
申请日：2008-03-31
申请人： QUALCOMM MEMS Technologies, Inc.
发明人： Sampsell, Jeffrey Brian , Gally, Brian James , Floyd, Philip, Don
IPC分类号： G02B26/00 , B81B3/00
CPC分类号： G02B26/0841 , B81B3/007 , B81B2201/042 , B81B2207/07 , B81B2207/092 , G02B5/284 , G02B26/001 , H01L31/04 , Y10T29/49126
摘要： Methods of fabricating a microelectromechanical systems (MEMS) device with shaped substrate and MEMS devices formed by the same are disclosed. In one embodiment, a MEMS device is fabricated by laminating a front substrate and a carrier, each of which has components preformed thereon. The front substrate is provided with stationary electrodes formed thereover. A carrier including movable electrodes formed thereover is attached to the front substrate. The carrier of some embodiments is released after transferring the movable electrodes to the front substrate. In other embodiments, the carrier stays over the front substrate, and serves as a backplate for the MEMS device. Features on the front substrate are shaped by embossing, by inscribing, or by patterning and etching. The methods not only reduce the manufacturing costs, but also provide a higher yield. The resulting MEMS devices can trap smaller volumes between laminated substrates and are less susceptible to pressure variations and moisture leakage.

17. 发明公开

EP1998209A3 Methods of fabricating static interferometric display devices and devices formed by same 审中-公开
标题翻译：一种用于干涉式显示器设备和显示器的制造中的是被形成为使得处理
公开(公告)号：EP1998209A3
公开(公告)日：2009-03-04
申请号：EP08153787.0
申请日：2008-03-31
申请人： QUALCOMM MEMS Technologies, Inc.
发明人： Sampsell, Jeffrey Brian , Gally, Brian James , Floyd, Philip Don
IPC分类号： G02B26/00 , B81B3/00 , G02B5/28
CPC分类号： G02B26/0841 , B81B3/007 , B81B2201/042 , B81B2207/07 , B81B2207/092 , G02B5/284 , G02B26/001 , H01L31/04 , Y10T29/49126
摘要： Methods of fabricating static interferometric display devices and devices formed by the same are disclosed. In one embodiment, a static interferometric display device is fabricated by laminating a front substrate and a backplate, each of which has components preformed thereon. At least one of the front substrate and the backplate has cavities of selected depth for interferometric modulation. Features are formed by deposition and patterning, by embossing, or by patterning and etching. The methods not only reduce the manufacturing costs, but also provide a higher yield.

18. 发明公开

EP1016135A4 FUSION-BOND ELECTRICAL FEED-THROUGH 失效
标题翻译：电气焊接加工跨河
公开(公告)号：EP1016135A4
公开(公告)日：2006-06-21
申请号：EP98934521
申请日：1998-07-16
申请人： KAVLICO CORP
发明人： ISMAIL M SALLEH , GARABEDIAN RAFFI M , NEILSEN MAX E , PASHBY GARY J , WONG JEFFREY K K
IPC分类号： G01P15/125 , B81B3/00 , B81C1/00 , G01L9/00 , G01L9/12 , H01L21/762 , H01L21/764 , H01L21/768 , H01L23/10 , H01L29/84 , H01L21/465 , G01P15/08 , G01P15/13
CPC分类号： B81C1/00293 , B81B2207/092 , B81C1/00301 , B81C2203/019 , B81C2203/036 , G01L9/0042 , G01L9/0073 , H01L21/76251 , H01L21/764 , H01L21/76898 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device (400) has a flexible structure bonded to a semiconductor substructure to form a cavity. The flexible structure is bonded over a conducting feed-through without the feed-through interfering with a hermetic seal formed by bonding. One embodiment (400) of the device includes depressions (418) that contain edges of a diffused feed-through (410) so that imperfections at the edge (420) of the diffusion (408) do not interfere with bonding. The flexible structure is bonded to elevated areas (404, 406) thus hiding the imperfections. Another embodiment has either a surface or buried well in a semiconductor structure and extending from an active region in the cavity to a point outside the perimeter of the flexible structure. The well provides a conductive feed-through structure without creating imperfections that would interfere with the bonding that seals the cavity.

19. 发明公开

EP1184335A3 Bauelement für Sensoren mit intergrierter Elektronik und Verfahren zu seiner Herstellung, sowie Sensor mit intergrierter Elektronik 有权
标题翻译：部件用于与集成电子元件和方法，用于其生产，以及与集成电子元件的传感器的传感器
公开(公告)号：EP1184335A3
公开(公告)日：2004-03-03
申请号：EP01117577.5
申请日：2001-07-20
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Bruchhaus, Rainer, Dr. , Kolb, Stefan , Pitzer, Dana , Primig, Robert , Schreiter, Matthias , Winkler, Bernhard
IPC分类号： B81B3/00
CPC分类号： B81C1/00246 , B81B7/0006 , B81B2203/0127 , B81B2203/0315 , B81B2207/07 , B81B2207/092 , B81B2207/097 , B81C2201/0109 , B81C2201/0163 , B81C2201/017 , B81C2203/0778
摘要： Ein Bauelement für integrierte Sensoren, insbesondere für IR-Sensoren, hat ein Substrat (1), in dem eine Schaltung bzw. Bauelemente der Ausleseelektronik integriert ist/sind. Auf dem Substrat (1) ist eine Hilfsschicht angeordnet, die mit ein oder mehreren abgeschlossenen oder evakuierten Hohlräumen (3a) versehen ist. Eine Membran (4) schließt die Hohlräume (3a) nach oben hin ab, so dass ein Sensorelement vertikal in Bezug auf die Ausleseelektronik angeordnet werden kann. In Stützstrukturen (5) aus Si-Oxid befinden sich Metallisierungen (7), die sich senkrecht durch den Hohlraum (3a) erstrecken, um die vertikal angeordneten Sensorelemente und Ausleseschaltungen elektrisch zu verbinden.

20. 发明授权

EP2823276B1 MIKROMECHANISCHES MESSELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES MIKROMECHANISCHEN MESSELEMENTS 有权
标题翻译：微机械测量元件和生产微机械测量元件的方法
公开(公告)号：EP2823276B1
公开(公告)日：2018-05-02
申请号：EP13710814.8
申请日：2013-03-08
申请人： Epcos AG
发明人： SCHIFFER, Michael , PESCHKA, Andreas , ZAPF, Jörg , WEIDNER, Karl , HEDLER, Harry
IPC分类号： B23K1/00 , G01P1/02 , G01D11/24 , G01L19/14 , B81B7/00
CPC分类号： G01L19/14 , B23K1/0008 , B23K1/0016 , B81B7/007 , B81B2207/092 , B81B2207/096 , G01D11/245 , G01L19/147 , G01L19/148 , G01P1/023 , H01L2224/16225 , H01L2924/10155 , H01L2924/15151

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