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11. 发明公开

EP2908330A1 GROUP III NITRIDE COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译： GROUP III NITRIDVERBUNDSUBSTRAT，工艺为III族氮化物半导体部件用和方法
公开(公告)号：EP2908330A1
公开(公告)日：2015-08-19
申请号：EP13845267.7
申请日：2013-09-04
申请人： Sumitomo Electric Industries, Ltd.
发明人： ISHIBASHI, Keiji , HACHIGO, Akihiro , HIROMURA, Yuki , MATSUMOTO, Naoki , NAKAHATA, Seiji , NAKANISHI, Fumitake , YANAGISAWA, Takuya , UEMATSU, Koji , SEKI, Yuki , YAMAMOTO, Yoshiyuki , YOSHIZUMI, Yusuke , MIKAMI, Hidenori
IPC分类号： H01L21/02
CPC分类号： H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate (1) includes a group III nitride film (13) and a support substrate (11) formed from a material different in chemical composition from the group III nitride film (13). The group III nitride film (13) is joined to the support substrate (11) in one of a direct manner and an indirect manner. The group III nitride film (13) has a thickness of 10 µm or more. A sheet resistance of a group III-nitride-film (13)-side main surface (13m) is 200 Ω/sq or less. A method for manufacturing the group III nitride composite substrate (1) includes the steps of: bonding the group III nitride film (13) and the support substrate (11) to each other in one of a direct manner and an indirect manner; and reducing the thickness of at least one of the group III nitride film (13) and the support substrate bonded to each other.
摘要翻译：本发明提供一种III族氮化物复合衬底具有低薄层电阻和以高产率，和用于制造其的方法，以及用于制造使用该III族氮化物复合衬底的III族氮化物半导体器件的方法制造。 III族氮化物复合衬底（1）包括：III族氮化物膜（13）和从在化学组成不同的材料形成为从所述III族氮化物膜（13）的支撑基板（11）。 III族氮化物的电影（13）以直接的方式中的一个，并间接地接合到所述支撑基板（11）。 III族氮化物膜（13）的厚度为10微米或更大。一III族氮化物膜（13）侧的主面（13米）的薄层电阻为200©/ sq或更小。一种用于制造III族氮化物复合衬底（1）的方法包括以下步骤：贴合III族氮化物的电影（13）和以直接的方式中的一个，并间接方式与支撑基板（11）彼此连接; 并降低了III族氮化物的电影（13）和键合到海誓山盟支撑基板中的至少一个的厚度。

12. 发明公开

EP2562789A1 METHOD FOR PRODUCING COMPOSITE SUBSTRATE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES VERBUNDSUBSTRATS
公开(公告)号：EP2562789A1
公开(公告)日：2013-02-27
申请号：EP11771989.8
申请日：2011-04-19
申请人： Sumitomo Electric Industries, Ltd.
发明人： MAEDA, Yoko , SATO, Fumitaka , HACHIGO, Akihiro , NAKAHATA, Seiji
IPC分类号： H01L21/02 , H01L27/12 , H01L33/32
CPC分类号： H01L29/0603 , H01L21/76254 , H01L29/2003 , H01L33/0079
摘要： Affords a method of manufacturing a composite substrate in which the joining strength between a first substrate composed of a nitride compound semiconductor and a second substrate is high. A composite-substrate manufacturing method of the present invention includes: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of obtaining a bonded substrate by bonding the bulk substrate and the second substrate together; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing, in such as way as to leave the first substrate as a portion of the bulk substrate atop the second substrate, the remaining portion of the bulk substrate from the bonded substrate; characterized in that letting the first temperature be T 1 °C, the thermal expansion coefficient of the first substrate be A × 10 -6 /°C, and the thermal expansion coefficient of the second substrate be B × 10 -6 /°C, the following formula (I) is satisfied.
摘要翻译：提供一种制造复合衬底的方法，其中由氮化物半导体和第二衬底组成的第一衬底之间的接合强度高。本发明的复合基板的制造方法包括：通过由氮化物半导体构成的块状基板的表面进行离子注入的工序; 通过将本体基板和第二基板结合在一起而获得接合基板的步骤; 将键合衬底的温度升高到第一温度的步骤; 维持固定时间的第一个温度的步骤; 以及通过以将离开第一基板作为体基板的一部分在第二基板顶部的方式切断复合基板的步骤，从接合基板将本体基板的剩余部分留下; 其特征在于，使第一温度为T 1℃，第一基板的热膨胀系数为A×10 -6 /℃，第二基板的热膨胀系数为B×10 -6 /℃，满足下式（I）。

13. 发明授权

EP2037011B1 METHOD OF GROWING A SINGLE CRYSTAL OF NITRIDE OF GROUP III ELEMENT 有权
标题翻译：描绘处理的单晶的III族元素的氮化物
公开(公告)号：EP2037011B1
公开(公告)日：2012-09-05
申请号：EP06766810.3
申请日：2006-06-16
申请人： Sumitomo Electric Industries, Ltd.
发明人： MIYANAGA, Michimasa , MIZUHARA, Naho , FUJIWARA, Shinsuke , NAKAHATA, Seiji , NAKAHATA, Hideaki
IPC分类号： C30B29/40
CPC分类号： C30B23/005 , C30B29/403 , C30B35/002 , Y10T428/2982

14. 发明公开

EP2199436A1 GAN EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING GAN EPITAXIAL SUBSTRATE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译： GaN外延基板，半导体装置和方法的GaN外延衬底和半导体器件制造
公开(公告)号：EP2199436A1
公开(公告)日：2010-06-23
申请号：EP08835691.0
申请日：2008-09-19
申请人： Sumitomo Electric Industries, Ltd.
发明人： NAKAHATA, Seiji , MOTOKI, Kensaku
IPC分类号： C30B29/38 , C30B25/18 , H01L21/205 , H01S5/323 , H01S5/343
CPC分类号： H01S5/32341 , C30B29/406 , H01L21/02387 , H01L21/02458 , H01L21/0254 , H01L21/02656 , H01S5/0042 , H01S5/2201 , H01S2301/173
摘要： Affords GaN epitaxial wafers designed to improve production yields, as well as semiconductor devices utilizing such GaN epitaxial wafers, and methods of manufacturing such GaN epitaxial wafers and semiconductor devices.
A GaN epitaxial wafer manufacturing method involving the present invention includes a first GaN layer formation step of epitaxially growing a first GaN layer onto a substrate, a pit formation step, following the first GaN layer formation step, of forming pits in the front side of the substrate, and a second GaN layer formation step, following the pit-formation step, of epitaxially growing a second GaN layer onto the first GaN layer, and therefore controls cracking to a minimum and improves production yields.
摘要翻译：得到的GaN外延片设计为提高生产产量，以及半导体器件利用搜索GaN外延晶片和制造GaN外延晶片和半导体寻求器件的方法。的GaN外延晶片的制造方法涉及本发明包括在所述前侧上外延生长第一GaN层到基材，一个凹部形成步骤，继所述第一GaN层形成步骤，形成凹坑的第一GaN层形成步骤基板，以及第二GaN层形成步骤，继凹坑形成工序中，外延生长第二GaN层于该第一GaN层，因此控件裂化到最小，并提高了生产产量。

15. 发明授权

EP2484817B1 METHOD FOR PRESERVING A GALLIUM NITRIDE SUBSTRATE 有权转让
公开(公告)号：EP2484817B1
公开(公告)日：2019-10-02
申请号：EP10820226.8
申请日：2010-07-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： NAKAHATA, Seiji
IPC分类号： C30B29/38 , C23C16/34 , H01L21/205 , H01L33/32 , C30B33/00 , H01L33/16 , H01L33/46

16. 发明公开

EP2246462A1 III-GROUP NITRIDE SINGLE-CRYSTAL INGOT, III-GROUP NITRIDE SINGLE-CRYSTAL SUBSTRATE, METHOD FOR MANUFACTURING III-GROUP NITRIDE SINGLE-CRYSTAL INGOT, AND METHOD FOR MANUFACTURING III-GROUP NITRIDE SINGLE-CRYSTAL SUBSTRATE 审中-公开
标题翻译： III族氮化物单晶锭，Ⅲ族氮化物晶体衬底，用于生产III族氮化物单晶锭AND METHOD FOR PRODUCING III族氮化物晶体衬底
公开(公告)号：EP2246462A1
公开(公告)日：2010-11-03
申请号：EP08871801.0
申请日：2008-12-24
申请人： Sumitomo Electric Industries, Ltd.
发明人： OKAHISA, Takuji , NAKAHATA, Seiji , UEMURA, Tomoki
IPC分类号： C30B29/38 , C23C16/34 , C30B25/18
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , C30B33/12
摘要： Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.
摘要翻译：得到III族氮化物单晶锭，Ⅲ族氮化物单晶衬底制造利用铸锭，以及制造III族氮化物单晶锭的方法及制造III族氮化物单晶衬底的方法，worin发病时的裂纹的长度延伸的生长减少。通过包括蚀刻基底基板的边缘表面的步骤，和外延生长在基体基板六方晶系III族氮化物单晶具有在其侧表面的结晶学平面的工序为特征。为了减少锭的长度延伸的生长过程中裂纹发生率，多晶的沉积出和外的面取向的晶体走上单晶的周边必须控制。基础基板的边缘表面的层，如刚刚描述的，在那里它已经被机械改变被去除预先通过蚀刻，由此晶面的III族氮化物单晶锭的侧面上形成并形成到基础基板，其因此控制存入出多晶的和出不同面取向的晶体并减少裂纹的发生。

17. 发明公开

EP2083099A1 PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES KRISTALLS EINES NITRIDS EINES ELEMENTS DER GRUPPE III
公开(公告)号：EP2083099A1
公开(公告)日：2009-07-29
申请号：EP07831826.8
申请日：2007-11-14
申请人： Sumitomo Electric Industries, Ltd.
发明人： MIZUHARA, Naho , UEMATSU, Koji , MIYANAGA, Michimasa , TANIZAKI, Keisuke , NAKAHATA, Hideaki , NAKAHATA, Seiji , OKAHISA, Takuji
IPC分类号： C30B29/38 , C30B25/20 , H01L21/205
CPC分类号： H01L29/045 , C30B19/02 , C30B23/025 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003 , Y10T428/24752
摘要： The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20 m ) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10 p ), (10 q ) having major surfaces (10 pm ), (10 qm ) of the designated plane orientation; a step of disposing the substrates (10 p ), (10 q ) adjoining each other sideways in such a way that the major surfaces (10 pm ), (10 qm ) of the substrates (10 p ), (10 q ) parallel each other and so that the [0001] directions in the substrates (10 p ), (10 q ) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10 pm ), (10 qm ) of the substrates (10 p ), (10 q ).
摘要翻译：本III-氮化物晶体制造方法，通过选择指定的具有除{0001}以外的面取向主面（20μm）的III族氮化物晶体（20）的制造方法包括：将III- 氮化物块状晶体（1）分离成具有指定平面取向的主表面（10μm），（10qm）的多个III族氮化物晶体衬底（10 p），（10 q）将衬底（10 p），（10 q）彼此相邻的衬底（10 p），（10 q）布置成使得衬底（10p），（10q），（10q）的主表面（10μm），（10qm）使得基板（10 p），（10 q）中的[0001]方向以相同的方式取向; 以及在衬底（10p），（10q）的主表面（10μm），（10qm）上生长III族氮化物晶体（20）的步骤。

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