专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明公开

EP2584591A1 METHOD FOR CLEANING SILICON CARBIDE SEMICONDUCTOR 审中-公开
标题翻译： VERFAHREN ZUR REINIGUNG EINES SILICIUMCARBIDHALBLEITEB
公开(公告)号：EP2584591A1
公开(公告)日：2013-04-24
申请号：EP11795437.0
申请日：2011-02-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： WADA, Keiji , MASUDA, Takeyoshi , MIYAZAKI, Tomihito , HIYOSHI, Toru , ITOH, Satomi , SHIOMI, Hiromu
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , H01L21/02057 , H01L21/67051 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： A method of cleaning a SiC semiconductor (2) includes the steps of forming an oxide film at the surface (2a) of a SiC semiconductor (2), and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface (2a) of the SiC semiconductor (2) and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor (2) that can exhibit cleaning effect on the SiC semiconductor (2).
摘要翻译：一种清洗SiC半导体（2）的方法包括在SiC半导体（2）的表面（2a）形成氧化膜，除去氧化膜的步骤。在形成氧化膜的步骤中，使用浓度大于或等于30ppm的臭氧水形成氧化膜。成形步骤优选包括加热SiC半导体（2）的表面（2a）和臭氧水中的至少一个的步骤。因此，可以获得能够对SiC半导体（2）进行清洁效果的SiC半导体（2）的清洗方法。

12. 发明公开

EP2889899A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBID-HALBLEITERBAUELEMENTS
公开(公告)号：EP2889899A1
公开(公告)日：2015-07-01
申请号：EP13832444.7
申请日：2013-07-10
申请人： Sumitomo Electric Industries, Ltd.
发明人： SHIOMI, Hiromu
IPC分类号： H01L21/336 , H01L21/20 , H01L21/265 , H01L29/12 , H01L29/78
摘要： A method for manufacturing a silicon carbide semiconductor device (1) includes the following steps. A silicon carbide substrate (13) is heated in an atmosphere containing oxygen, so as to form a gate insulating film (8) on and in contact with the silicon carbide substrate (13). The silicon carbide substrate (13) having the gate insulating film (8) is heated at 1250°C or more in an atmosphere containing nitrogen and nitrogen monoxide. A value obtained by dividing partial pressure of the nitrogen monoxide by a total of partial pressure of the nitrogen and the partial pressure of the nitrogen monoxide in the second heating step is more than 3% and less than 10%. Accordingly, there can be provided a method for manufacturing a silicon carbide semiconductor device (1) having high mobility.
摘要翻译：一种制造碳化硅半导体器件（1）的方法包括以下步骤。在含氧气氛中加热碳化硅衬底（13），以在与碳化硅衬底（13）接触并形成栅极绝缘膜（8）。具有栅极绝缘膜（8）的碳化硅衬底（13）在含有氮气和一氧化氮的气氛中被加热到1250℃以上。在第二加热步骤中将一氧化氮的分压除以氮的分压和一氧化氮的分压的总和得到的值大于3％且小于10％。因此，可以提供一种具有高移动性的碳化硅半导体器件（1）的制造方法。

13. 发明公开

EP2600402A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：EP2600402A1
公开(公告)日：2013-06-05
申请号：EP11812210.0
申请日：2011-06-29
申请人： Sumitomo Electric Industries, Ltd.
发明人： HIYOSHI, Toru , WADA, Keiji , MASUDA, Takeyoshi , SHIOMI, Hiromu
IPC分类号： H01L29/12 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/049 , H01L29/045 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7395
摘要： A MOSFET (100) includes a silicon carbide substrate (1) including a main surface (1A) having an off angle of not less than 50° and not more than 65° with respect to a {0001} plane, a buffer layer (2) and a drift layer (3) formed on the main surface (1A), a gate oxide film (91) formed on and in contact with the drift layer (3), and a p type body region (4) of a p conductivity type formed in the drift layer (3) to include a region in contact with the gate oxide film (91). The p type body region (4) has a p type impurity density of not less than 5 × 10 16 cm -3
摘要翻译：一种MOSFET（100）包括：碳化硅衬底（1），其包括相对于{0001}面具有不小于50°且不大于65°的偏离角的主表面（1A），缓冲层）和形成在主表面（1A）上的漂移层（3），形成在漂移层（3）上并与其接触的栅极氧化物膜（91）以及形成p导电类型的p型体区（4）在漂移层（3）中包括与栅极氧化物膜（91）接触的区域。 p型体区（4）具有不小于5×10 16 cm -3的p型杂质密度

14. 发明公开

EP2584595A1 SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：碳化硅半导体器件制造方法
公开(公告)号：EP2584595A1
公开(公告)日：2013-04-24
申请号：EP11795442.0
申请日：2011-02-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： ITOH, Satomi , SHIOMI, Hiromu , NAMIKAWA, Yasuo , WADA, Keiji , SHIMAZU, Mitsuru , HIYOSHI, Toru
IPC分类号： H01L21/336 , H01L21/316 , H01L29/12 , H01L29/78
CPC分类号： H01L21/02057 , H01L21/02236 , H01L21/049 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted (S1-S3). By cleaning the first surface of the SiC semiconductor, a second surface is formed (S4). On the second surface, a Si-containing film is formed (S5). By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed (S6).
摘要翻译：提供了一种用于制造实现改进性能的SiC半导体器件的方法。用于制造SiC半导体器件的方法包括以下步骤。即，准备具有第一表面和第二表面的SiC半导体，所述第一表面具有至少一部分被注入杂质的部分（S1-S3）。通过清洁SiC半导体的第一表面，形成第二表面（S4）。在第二表面上形成含Si膜（S5）。通过氧化含Si膜，形成构成SiC半导体器件的氧化膜（S6）。

15. 发明公开

EP2584594A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造碳化硅半导体器件的方法和用于制造碳化硅半导体器件的装置
公开(公告)号：EP2584594A1
公开(公告)日：2013-04-24
申请号：EP11795436.2
申请日：2011-02-23
申请人： Sumitomo Electric Industries, Ltd.
发明人： ITOH, Satomi , SHIOMI, Hiromu , NAMIKAWA, Yasuo , WADA, Keiji , SHIMAZU, Mitsuru , HIYOSHI, Toru
IPC分类号： H01L21/336 , H01L21/302 , H01L21/304 , H01L21/316 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/02057 , H01L21/02236 , H01L21/02301 , H01L21/046 , H01L21/049 , H01L29/1608 , H01L29/66068
摘要： A method of fabricating a SiC semiconductor device (200) includes the steps of preparing a silicon carbide semiconductor (100) including a first surface (100a) having impurities implanted at least partially, forming a second surface (100b) by dry etching the first surface (100a) of the silicon carbide semiconductor (100) using gas including hydrogen gas, and forming an oxide film (126) constituting the silicon carbide semiconductor device (200) on the second surface (100b).
摘要翻译：一种制造SiC半导体器件（200）的方法包括以下步骤：准备包括至少部分地注入有杂质的第一表面（100a）的碳化硅半导体（100），通过干法刻蚀第一表面（100）的包含氢气的气体的第一表面（100a），并且在第二表面（100b）上形成构成碳化硅半导体器件（200）的氧化物膜（126）。

16. 发明公开

EP2549522A1 SEMICONDUCTOR THIN-FILM MANUFACTURING METHOD, SEMINCONDUCTOR THIN-FILM MANUFACTURING APPARATUS, SUSCEPTOR, AND SUSCEPTOR HOLDING TOOL 审中-公开
标题翻译： METHOD FOR半导体薄膜，APPARATUS FOR生产半导体薄膜，基座和SUSZEPTORENWERKZEUG
公开(公告)号：EP2549522A1
公开(公告)日：2013-01-23
申请号：EP11756047.4
申请日：2011-02-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： SHIOMI, Hiromu , SENDA, Yasuhiko , ITOH, Satomi , FUJIKAWA, Kazuhiro , SHIMADA, Shigeki , GENBA, Jun , TERAO, Takemi , FURUSHO, Masaru
IPC分类号： H01L21/205 , C23C16/455 , C23C16/458
CPC分类号： C23C16/4584 , C23C16/45504 , C23C16/4585 , C23C16/481 , H01L21/02378 , H01L21/02529 , H01L21/0262 , H01L21/02658 , H01L29/1608 , H01L29/872
摘要： Substrates (10-12) are mounted on a plurality of susceptors (20-22) respectively, The plurality of susceptors on which respective substrates are mounted are placed on a rotational mechanism so that the susceptors are vertically spaced at a predetermined interval. The rotational mechanism on which the plurality of susceptors are placed is rotated. The plurality of susceptors on which the substrates are mounted respectively are heated. Semiconductor thin-films are deposited by supplying a source gas to each of the susceptors that are heated while being rotated, the source gas having been heated while passing through gas flow paths of respective path lengths substantially equal to each other.
摘要翻译：基板（10-12）被安装在基座（20-22）分别在其上respectivement衬底基座的多元性安装放置在如此做了基座竖直地以预定的间隔隔开的旋转机构的复数。在其基座的多元性被放置在旋转机构旋转。其上基板分别安装基座的多元性被加热。半导体薄膜是通过供给原料气体到每个基座的沉积没有被旋转的同时进行加热，在通过respectivement路径的气体流路长度基本上等于海誓山盟已加热源气体。

17. 发明公开

EP3125297A1 SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME 有权
标题翻译： HERSTELLUGSVERFAHRENDAFÜR公司的硅胶
公开(公告)号：EP3125297A1
公开(公告)日：2017-02-01
申请号：EP15769856.4
申请日：2015-05-14
申请人： Sumitomo Electric Industries, Ltd.
发明人： SHIOMI, Hiromu
IPC分类号： H01L29/78 , H01L21/28 , H01L29/12 , H01L29/417 , H01L29/423 , H01L29/49
CPC分类号： H01L29/063 , H01L21/02529 , H01L21/046 , H01L21/049 , H01L29/0623 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/518 , H01L29/66068 , H01L29/7813
摘要： A silicon carbide semiconductor device (1) includes a silicon carbide substrate (10) and a gate insulating film (15). The silicon carbide substrate (10) includes a first impurity region (12), a second impurity region (13), and a third impurity region (14). The first impurity region (12) includes: a first region (12a) in contact with the second impurity region (13); a second region (12b) that is in contact with the first region (12a), that is located opposite to the second impurity region (13) when viewed from the first region (12a), and that has an impurity concentration higher than an impurity concentration of the first region (12a); and a third region (12c) that is in contact with the second region (12b), that is located opposite to the first region (12a) when viewed from the second region (12b), and that has an impurity concentration lower than the impurity concentration of the second region (12b). The gate insulating film (15) is in contact with the first region (12a), the second impurity region (13), and the third impurity region (14) at a side portion (SW) of a trench (TR). There are provided a silicon carbide semiconductor device having reduced on resistance and improved breakdown voltage as well as a method for manufacturing the silicon carbide semiconductor device.
摘要翻译：碳化硅半导体器件（1）包括碳化硅衬底（10）和栅极绝缘膜（15）。碳化硅衬底（10）包括第一杂质区（12），第二杂质区（13）和第三杂质区（14）。第一杂质区（12）包括：与第二杂质区（13）接触的第一区（12a）; 与第一区域（12a）接触的第二区域（12b），当从第一区域（12a）观察时位于与第二杂质区域（13）相对的位置，并且具有高于杂质的杂质浓度第一区域（12a）的浓度; 以及与所述第二区域（12b）接触的第三区域（12c），当从所述第二区域（12b）观察时，与所述第一区域（12a）相对，并且具有低于所述杂质的杂质浓度第二区域（12b）的浓度。栅极绝缘膜（15）在沟槽（TR）的侧部（SW）处与第一区域（12a），第二杂质区域（13）和第三杂质区域（14）接触。提供了具有降低的导通电阻和改善的击穿电压的碳化硅半导体器件以及用于制造碳化硅半导体器件的方法。

18. 发明公开

EP2667414A1 METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLOW EINES HALBLEITERBAUMMENTS AUS SILICIUMCARBID
公开(公告)号：EP2667414A1
公开(公告)日：2013-11-27
申请号：EP11856540.7
申请日：2011-11-15
申请人： Sumitomo Electric Industries, Ltd.
发明人： OOI, Naoki , SHIOMI, Hiromu
IPC分类号： H01L29/12 , H01L21/265 , H01L21/336 , H01L29/78
CPC分类号： H01L21/0465 , H01L21/31116 , H01L29/1608 , H01L29/66068
摘要： A method for manufacturing a silicon carbide semiconductor device (100) includes the step of forming a mask pattern of a silicon oxide film (31) by removing a portion of the silicon oxide film (31) by means of etching employing a gas containing oxygen gas and at least one fluorine compound gas selected from a group consisting of CF 4 , C 2 F 6 , C 3 F 8 , and SF 6 .
摘要翻译：一种制造碳化硅半导体器件（100）的方法包括通过使用含有氧气的气体的蚀刻去除氧化硅膜（31）的一部分来形成氧化硅膜（31）的掩模图案的步骤和选自由CF 4，C 2 F 6，C 3 F 8和SF 6组成的组中的至少一种氟化合物气体。

19. 发明公开

EP2657959A1 PROCESS FOR MANUFACTURE OF SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER SILICIUMCARBID-HALBLEITERVORRICHTUNG
公开(公告)号：EP2657959A1
公开(公告)日：2013-10-30
申请号：EP11847884.1
申请日：2011-08-09
申请人： Sumitomo Electric Industries, Ltd.
发明人： OOI, Naoki , SHIOMI, Hiromu
IPC分类号： H01L21/336 , H01L21/265 , H01L21/28 , H01L29/12 , H01L29/78
CPC分类号： H01L29/1608 , H01L21/0465 , H01L21/047 , H01L29/66068 , H01L29/7802
摘要： A first impurity region (123) is formed by ion implantation through a first opening formed in a mask layer (31). By depositing a spacer layer (32) on an etching stop layer on which the mask layer (31) has been provided, a mask portion (30) having the mask layer (31) and the spacer layer (32) is formed. By anisotropically etching the spacer layer (32), a second opening (P2) surrounded by a second sidewall is formed in the mask portion (30). A second impurity region (124) is formed by ion implantation through the second opening (P2). An angle (AW) of the second sidewall with respect to a surface (SO) is 90°±10° across a height (HT) as great as a second depth (D2). Thus, accuracy in extension of an impurity region can be enhanced.
摘要翻译：通过在掩模层（31）中形成的第一开口的离子注入形成第一杂质区（123）。通过在设置有掩模层（31）的蚀刻停止层上沉积间隔层（32），形成具有掩模层（31）和间隔层（32）的掩模部分（30）。通过各向异性蚀刻间隔层（32），在掩模部分（30）中形成由第二侧壁包围的第二开口（P2）。通过离子注入通过第二开口（P2）形成第二杂质区（124）。相对于表面（SO），第二侧壁的角度（AW）在与第二深度（D2）一样大的高度（HT）上为90°±10°。因此，可以提高杂质区域的扩展精度。

20. 发明授权

EP2889899B1 METHOD FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP2889899B1
公开(公告)日：2019-12-11
申请号：EP13832444.7
申请日：2013-07-10
申请人： Sumitomo Electric Industries, Ltd.
发明人： SHIOMI, Hiromu
IPC分类号： H01L21/336 , H01L29/12 , H01L29/78 , H01L21/02 , H01L21/265

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式