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    • 112. 发明公开
    • Flip chip LED package and manufacturing method thereof
    • Flipchip-LED-Baugruppe und Herstellungsverfahrendafür
    • EP2487730A2
    • 2012-08-15
    • EP12153743.5
    • 2012-02-03
    • Samsung LED Co., Ltd.
    • Kim, Kwon JoongPaek, Ho SunKim, Hak Hwan
    • H01L33/48H01L33/36H01L33/62
    • H01L33/486H01L33/36H01L33/62H01L2224/16245H01L2933/0016
    • A flip chip LED package (100) and a manufacturing method thereof are provided. The flip chip LED package (100) includes a package substrate (110) including a cavity (111) that exposes a circuit pattern (114,115), and a chip mounting portion (113) disposed on a bottom surface (112) of the cavity (111); a solder layer (120a,120b) disposed on the circuit pattern (114,115); a bonding tape layer (130) disposed on the chip mounting portion (113); and an LED chip (140) including a bonding object region (A) and a plurality of electrode pads (141,142) disposed on one surface, being mounted on the package substrate (110) such that the plurality of electrode pads (141,142) are bonded to the solder layer (120a,120b) and the bonding object region (A) is bonded to the bonding tape layer (130).
    • 提供了一种倒装芯片LED封装(100)及其制造方法。 倒装芯片LED封装(100)包括包括暴露电路图案(114,115)的空腔(111)的封装基板(110)和设置在空腔的底表面(112)上的芯片安装部分(113) 111); 设置在电路图案(114,115)上的焊料层(120a,120b); 设置在所述芯片安装部分(113)上的接合带层(130); 以及包括粘合对象区域(A)和设置在一个表面上的多个电极焊盘(141,142)的LED芯片(140),安装在所述封装基板(110)上,使得所述多个电极焊盘(141,142)被接合 到焊料层(120a,120b)并且粘合物区域(A)被粘合到粘合带层(130)上。
    • 115. 发明公开
    • Method of manufacturing light emitting diode
    • 制造发光二极管的方法
    • EP2469612A2
    • 2012-06-27
    • EP11177729.8
    • 2011-08-17
    • Samsung LED Co., Ltd.
    • Han, Sang HeonRhee, Do YoungLim, Jin YoungKim, Ki SungKim, Young Sun
    • H01L33/00H01L21/02H01L33/32
    • H01L33/007C30B25/02C30B29/403H01L21/0237H01L21/02458H01L21/02502H01L21/0254H01L21/02579H01L21/02581H01L21/0262H01L33/325
    • There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.
    • 提供了一种制造发光二极管的方法,该方法包括:在第一反应室中在衬底上生长第一导电型氮化物半导体层和有源层; 将具有第一导电型氮化物半导体层和在其上生长的有源层的衬底转移到第二反应室; 以及在所述第二反应室中的所述有源层上生长第二导电类型氮化物半导体层,其中在所述第二导电类型氮化物半导体层中形成包括氮化物源气体和提供待包括在所述第二导电类型氮化物半导体层中的掺杂剂的掺杂剂源气体的气氛 在将衬底转移到第二反应室之前,第二反应室的内部。 这种方法提高了系统的操作能力和生产力。 另外,可以提高通过该方法获得的半导体层的结晶性和掺杂均匀性。