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1. 发明公开

EP3352172A1 METHOD FOR FORMING INFORMATION RECORDING MEDIA 无效转让
公开(公告)号：EP3352172A1
公开(公告)日：2018-07-25
申请号：EP16846596.1
申请日：2016-09-09
申请人： Dai Nippon Printing Co., Ltd.
发明人： ARITSUKA, Yuki , NAKATA, Naoko , ODA, Hirokazu
IPC分类号： G11B7/26 , B29C59/02 , G03F7/20 , G03F9/00 , G11B7/0033 , G11B7/2531 , H01L21/027
CPC分类号： G11B7/263 , B29C33/3878 , B29C43/02 , B29C43/50 , B29C59/02 , B29K2909/08 , B29L2017/001 , G03F7/0002 , G03F7/20 , G03F7/2053 , G03F7/2059 , G03F9/00 , G11B7/0033 , G11B7/2531 , G11B7/26 , G11B7/261 , H01L21/027
摘要： The same digital data is recorded with highly integrated manner on a plurality of media able to durably hold information over long-term. A minute graphic pattern indicating data bit information is drawn on a resist layer formed on a quartz glass substrate by exposing a beam and developed so as to prepare a master medium (M1), which comprises the quartz glass substrate having a minute recess and protrusion structure formed by etching where the remaining resist are used as a mask (Fig. (a)). The recess and protrusion structure recorded on the master medium (M1) is shaped and transferred onto a flexible recording medium (G2) on which a UV curable resin layer (61) is formed, whereby an intermediate medium (M2) is prepared (Figs. (b)-(d)). The inverted recess and protrusion structure transferred to the intermediate medium (M2) is shaped and transferred onto a recording medium (G3) comprising a quartz glass substrate (70) on which a UV curable resin layer (80) is formed, whereby a reproduction medium (M3) having the same recess and protrusion structure as that of the master medium (M1) is prepared (Figs. (e)-(h)). In shaping and transferring process, the media are separated using the flexibility of the intermediate medium (M2).

2. 发明公开

EP3329243A1 KIT, COMPOSITION AND METHOD FOR PREPARING A SPECIMEN FOR IMAGING AND METHOD FOR DIAGNOSING A DISEASE 审中-公开
公开(公告)号：EP3329243A1
公开(公告)日：2018-06-06
申请号：EP16744502.2
申请日：2016-07-25
申请人： The University Of Manchester
发明人： YEATES, Stephen , LEWIS, Scott , WINPENNY, Richard
IPC分类号： G01N1/30 , G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G01N1/30 , G01N2001/305 , G03F7/027 , G03F7/2059
摘要： The present invention relates to an imagable specimen sample, particularly an imagable histological sample for imaging via techniques such as scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The invention provides imaging preparation compositions, such as resin compositions, which can be embedded within a specimen sample and can also encapsulate the sample. The compositions contain either or both of a secondary electron generator and/or a self-healing component. The secondary electron generator enhances image quality by increasing the amount of secondary electron scattering. The self-healing component minimises specimen sample damage caused by the imaging technique.

3. 发明公开

EP3123245A1 SECONDARY ELECTRON GENERATING COMPOSITION 审中-公开
标题翻译： SEKUNDÄRELEKTRONENERZEUGUNGSZUSAMMENSETZUNG
公开(公告)号：EP3123245A1
公开(公告)日：2017-02-01
申请号：EP15713799.3
申请日：2015-03-24
申请人： The University Of Manchester
发明人： LEWIS, Scott , YEATES, Stephen , WINPENNY, Richard
IPC分类号： G03F7/004 , H01L21/00
CPC分类号： G03F7/0044 , G03F1/78 , G03F7/0042 , G03F7/038 , G03F7/039 , G03F7/162 , G03F7/168 , G03F7/2059 , G03F7/325 , G03F7/40 , H01L21/30604 , H01L21/3081 , H01L21/52 , H01L21/563 , H01L21/76838 , H01L21/78 , H01L24/81 , H01L2224/8138
摘要： The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.
摘要翻译：本发明涉及抗蚀剂组合物，特别是用于通过电子束光刻制造电子元件。除了通常的基础聚合物组分（抗蚀剂聚合物）之外，为了促进二次电子产生，二次电子发生器包括在本发明的抗蚀剂组合物中。这种独特的组合组合以受控的方式增加了抗蚀剂的曝光灵敏度，这有助于高分辨率图案化基板（以及相应的电子部件）的有效生产，但是写入速度更高。

4. 发明公开

EP3106920A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译： ACTIVE SENSITIVE或光辐射敏感性树脂组合物活性光性或感放射线敏膜，经活性敏感或感放射线性光膜，光掩模，结构形成方法，方法生产电子器件和电子设备的掩模坯
公开(公告)号：EP3106920A1
公开(公告)日：2016-12-21
申请号：EP14881770.3
申请日：2014-12-11
申请人： Fujifilm Corporation
发明人： TAKAHASHI Koutarou , TSUCHIMURA Tomotaka , YAMAGUCHI Shuhei , YOKOKAWA Natsumi , MOCHIZUKI Hidehiro
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/038 , G03F1/24 , G03F1/50 , G03F1/78 , G03F7/0382 , G03F7/2059 , G03F7/32
摘要： An actinic ray-sensitive or radiation-sensitive resin composition includes an alkali-soluble resin (A) having a phenolic hydroxyl group, and a crosslinking agent (C) having two or more hydroxymethyl groups or alkoxymethyl groups in total within the molecule, wherein the composition contains a crosslinking agent (C1) having a molecular weight of 420 or more and also having two to four hydroxymethyl groups or alkoxymethyl groups in total within the molecule in a proportion of 60 mol% to 100 mol% based on the total amount of the crosslinking agent (C) including the crosslinking agent (C1), and in which the total concentration of the hydroxymethyl groups or the alkoxymethyl groups of the crosslinking agent (C) relative to 1 g of the solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 0.30 mmol/g or more.
摘要翻译：光化射线敏感或辐射敏感树脂组合物包含在分子内具有总共两个或更多个羟基基团或烷氧基甲基的碱溶性树脂（A）具有酚羟基基团，和交联剂（C），worin的组合物包含具有的420或更大的分子量和基于所述总量从而具有在60％（摩尔）的比例，以100摩尔％分子中总共三时五十八羟甲基或烷氧基团的交联剂（C1）交联剂（C）包含交联剂（C1），并且其中的羟甲基的总浓度或交联剂的烷氧基甲基（C）相对于1克固体含量在光化射线敏感或辐射敏感的树脂组合物为0:30毫摩尔/ g以上。

5. 发明授权

EP2868698B1 CONDUCTIVE POLYMER COMPOSITION, COATED ARTICLE WHICH IS PROVIDED WITH ANTISTATIC FILM OBTAINED FROM CONDUCTIVE POLYMER COMPOSITION, AND PATTERN FORMING METHOD USING CONDUCTIVE POLYMER COMPOSITION 有权
标题翻译：导电聚合物组合物，提供有从导电聚合物组合物获得的抗静电膜的涂覆制品，以及使用导电聚合物组合物的图案形成方法
公开(公告)号：EP2868698B1
公开(公告)日：2016-12-07
申请号：EP13813440.8
申请日：2013-06-06
申请人： Shin-Etsu Polymer Co. Ltd. , Shin-Etsu Chemical Co., Ltd.
发明人： SAWAI, Toshiya , NAGASAWA, Takayuki , WATANABE, Satoshi , MASUNAGA, Keiichi
IPC分类号： C08L45/00 , C08K5/16 , G03F7/038 , G03F7/039 , G03F7/11
CPC分类号： H01B1/127 , C08K5/20 , G03F7/093 , G03F7/20 , G03F7/2059 , G03F7/2061

6. 发明公开

EP3081987A2 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS 有权
标题翻译：化学EXTENDED负抗蚀剂组合物使用一种新的和抵制鎓盐结构教学过程
公开(公告)号：EP3081987A2
公开(公告)日：2016-10-19
申请号：EP16163471.2
申请日：2016-04-01
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： MASUNAGA, Keiichi , WATANABE, Satoshi , KOTAKE, Masaaki , DOMON, Daisuke , FUJIWARA, Takayuki
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/38
CPC分类号： G03F7/0045 , G03F1/20 , G03F1/22 , G03F7/0046 , G03F7/0382 , G03F7/09 , G03F7/2059 , G03F7/30 , G03F7/322
摘要： A chemically amplified negative resist composition is defined as comprising (A) an onium salt having an anion moiety which is a nitrogen-containing carboxylate of fused ring structure, (B) a base resin, and (C) a crosslinker. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

7. 发明公开

EP2641730A3 Methods for fabricating a retroreflector tooling and retroreflective microstructures and devices thereof 审中-公开
标题翻译：一种用于制造后向反射器工具和逆反射的微结构和它们的Vorrichten过程
公开(公告)号：EP2641730A3
公开(公告)日：2016-09-07
申请号：EP13151527.2
申请日：2013-01-16
申请人： ORAFOL Americas Inc.
发明人： Scott, Steven
IPC分类号： B29D11/00 , G03F7/20
CPC分类号： G03F7/2059 , B29D11/00605 , G02B5/124 , G03F7/0005 , G03F7/24 , G03F7/30
摘要： Methods for producing retroreflector tooling and retroreflective sheeting using laser writing techniques, and corresponding products thereof, are presented. In one embodiment, a seamless retroreflective sheet having a plurality of retroreflectors formed in a continuous retroreflective microstructured pattern is provided. In the methods described herein, a substrate having a photosensitive coating on a surface thereof is provided. A surface-relief microstructured pattern is produced in the photosensitive coating by selectively exposing the photosensitive coating to a beam of electromagnetic radiation. The exposed portions of the photosensitive coating are developed to form a retroreflective microstructured pattern on the surface of the substrate. The retroreflective microstructured pattern is then transferred into retroreflector tooling comprising the retroreflective microstructured pattern on a surface thereof. A retroreflective sheet containing the retroreflective microstructured pattern on a surface thereof is then formed from the retroreflector tooling.

8. 发明公开

EP1125166A1 FABRICATION OF SUB-MICRON ETCH-RESISTANT METAL/SEMICONDUCTOR STRUCTURES USING RESISTLESS ELECTRON BEAM LITHOGRAPHY 审中-公开
标题翻译： HERSTELLUNG VONÄTZRESSTENTENSUBMIKRONSTRUKTUREN AUF金属/ HALBLEITERBASIS UNTER BENUTZUNG RESISTFREIER ELEKTRONENSTRAHLLITHOGRAPHIE
公开(公告)号：EP1125166A1
公开(公告)日：2001-08-22
申请号：EP99944192.6
申请日：1999-09-17
申请人： Quantiscript Inc.
发明人： BEAUVAIS, Jacques , DROUIN, Dominique , LAVALLEE, Eric
IPC分类号： G03F1/08 , G03F1/14 , G03F7/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/58 , G03F1/78 , G03F7/0002 , G03F7/2059
摘要： To fabricate a mask for X-ray and/or ultraviolet lithography, a layer opaque to X-ray and/or ultraviolet radiation is first deposited on a substrate transparent to such radiation or reflective to ultraviolet radiation. Two superposed layers are then deposited on the opaque layer, a layer of silicon and a layer of metal. A focused electron beam is then applied to and displaced on the superposed layers to locally heat the metal and the silicon and cause diffusion of metal and silicon in each other to form a structure of etch-resistant metal silicide. The layers of metal and silicon are etched to leave on the substrate only the structure of etch-resistant metal silicide and the layer opaque to X-ray and/or ultraviolet radiation underneath this structure to form the mask for X-ray and/or ultraviolet lithography. A similar process is used to fabricate molds for nanimprint lithography.
摘要翻译：用于在半导体材料的衬底上制造耐蚀刻金属/半导体化合物的亚微米结构的方法包括在衬底上沉积能够与半导体材料反应以形成抗蚀刻金属/半导体的金属层的步骤化合物和产生聚焦电子束的步骤。将聚焦的电子束施加到金属层上以局部加热金属和半导体材料并引起金属和半导体材料彼此扩散以形成抗蚀刻金属/半导体化合物。聚焦的电子束被置于金属层上以形成耐腐蚀金属/半导体化合物的结构。最后，金属层被湿蚀刻以留下基板上仅金属/半导体化合物的结构。在对金属层进行湿蚀刻之后，可以进行氧等离子体蚀刻以去除在抗蚀刻金属/半导体化合物的结构的表面处形成的碳沉积物。此外，可以随后蚀刻衬底以通过在室温下将金属和半导体材料彼此反应来除去形成在衬底表面上的富金属的半导体材料的薄层。

9. 发明公开

EP0735428A3 Fine pattern forming method and fine pattern device 失效
标题翻译：一种用于生产微细结构的方法和具有精细结构的器件
公开(公告)号：EP0735428A3
公开(公告)日：1998-06-10
申请号：EP96301950
申请日：1996-03-21
申请人： SHIMADZU CORP
发明人： NAGAMACHI SHINJI
IPC分类号： H01L21/302 , G03F7/004 , G03F7/20 , H01L21/027
CPC分类号： B82Y10/00 , G03F7/0042 , G03F7/2059 , Y10S438/962
摘要： A particle beam is irradiated locally to a film of an alloy or compound containing atoms of two or more elements, causing atoms of a specific element in the film to selectively recoil to the outside of the film, such that there is formed, inside of the film, a zone in the form of a pattern in which the rate of the atoms of the specific type is smaller than in other portions of the film. In the fine pattern thus formed, the thickness is substantially equal to that of the film, and other sizes are determined according to the particle beam irradiation zone. For example, when a focused ion beam is used as the particle beam, there can be formed a fine pattern on the 10-nm level with precision of the order of nm. This fine pattern can be a quantum wire, a quantum dot or the like. It is therefore possible to produce, with good reproducibility, a device in which a quantum effect has been utilized.

10. 发明公开

EP0602829A2 Grating fabrication using electron beam lithography 失效
标题翻译： Gitterherstellung unter Verwendung von Elektronenstrahllithographie。
公开(公告)号：EP0602829A2
公开(公告)日：1994-06-22
申请号：EP93309585.3
申请日：1993-12-01
申请人： AT&T Corp.
发明人： Koch, Thomas Lawson , Ostermayer, Frederick William, Jr. , Tennant, Donald Milan , Verdiell, Jean-Marc
IPC分类号： G03F7/20 , G03F1/14 , G03F7/00 , G02B5/18 , G03F1/00
CPC分类号： G03F7/7035 , G02B6/12007 , G02B6/124 , G03F7/001 , G03F7/2059 , G03F7/704
摘要： A technique is disclosed for utilizing direct-write electron-beam photolithography and holographic optical exposure to form gratings in optoelectronic structures. The direct-write e-beam process is used to form rectangular grating teeth in a mask substrate, where the mask is then used as a phase mask to transfer the pattern to the optoelectronic device. Advantageously, the utilization of a direct write e-beam technique to form the grating pattern on the photomask allows for the formation of any desired number and location of abrupt phase shifts, multiple grating pitches, alignment fiducials, and any other desired features. Therefore, a single exposure of the direct write e-beam mask allows for a plurality of different grating patterns to be simultaneously printed.
摘要翻译：公开了一种利用直写式电子束光刻和全息光学曝光在光电结构中形成光栅的技术。直写式电子束工艺用于在掩模基板中形成矩形光栅齿，其中掩模然后用作相位掩模以将图案转移到光电子器件。有利地，利用直接写入电子束技术在光掩模上形成光栅图案允许形成任何期望数量和位置的突变相移，多个光栅间距，对准基准以及任何其它期望的特征。因此，直接写入电子束掩模的单次曝光允许同时打印多个不同的光栅图案。

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