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1. 发明授权

EP1663850B1 Process for fabricating a micro-electro-mechanical system with movable components 有权
标题翻译：一种用于制造微机电系统具有移动部件的方法
公开(公告)号：EP1663850B1
公开(公告)日：2009-09-16
申请号：EP04773454.6
申请日：2004-09-21
申请人： Panasonic Electric Works Co., Ltd.
发明人： OKA, Naomasa, c/o Panasonic Electric Works Co., Ltd , HARADA, Hiroshi, c/o Panasonic Electric Works Co.,Ltd. , OGIHARA, Jun, c/o Panasonic Electric Works Co., Ltd. , FUKSHIMA, Hiroshi, c/o Panasonic Electric Works Co., Ltd. , NOGE, Hiroshi, c/o Panasonic Electric Works Co.,Ltd. , SUZUKI, Yuji, c/o Panasonic Electric Works Co., Ltd. , KAWANO, Kiyohiko, c/o Panasonic Electric Works Co., Ltd. , YOSHIHARA, Takaaki, c/o Panasonic Electric Works Co., Ltd. , SUZUMURA, Masahiko, c/o Panasonic Electric Works Co.,Ltd.
IPC分类号： B81B3/00 , G02B26/08 , B81C1/00
CPC分类号： G02B26/0816 , B81B3/0086 , B81B2201/033 , B81B2201/045 , B81C1/00484 , B81C2201/0109 , B81C2201/019 , G02B6/3516 , G02B6/3518 , G02B6/3546 , G02B6/355 , G02B6/357 , G02B6/3584 , H02N1/008
摘要： A process for fabricating a micro-electro-mechanical system (MEMS) composed of fixed components fixedly supported on a lower substrate and movable components movably supported on the lower substrate. The process utilizes an upper substrate separate from the lower substrate. The upper substrate is selectively etched in its top layer to form therein a plurality of posts which project commonly from a bottom layer of the upper substrate. The posts include the fixed components to be fixed to the lower substrate and the movable components which are resiliently supported only to one or more of the fixed components to be movable relative to the fixed components. The lower substrate is formed in its top surface with at least one recess. The upper substrate is then bonded to the top of the lower substrate upside down in such a manner as to place the fixed components directly on the lower substrate and to place the movable components upwardly of the recess. Finally, the bottom layer of the upper substrate is removed to release the movable components from the bottom layer for floating the movable components above the recess and allowing them to move relative to the lower substrate, while keeping the fixed components fixed to the top of the lower substrate.

2. 发明授权

EP1211219B1 Process for manufacturing micromechanical and microoptomechanical structures with backside metalization 有权
标题翻译：一种用于制备具有背侧金属化的微机械和microoptomechanical结构过程
公开(公告)号：EP1211219B1
公开(公告)日：2007-05-16
申请号：EP01128160.7
申请日：2001-11-27
申请人： MICROSCAN SYSTEMS INCORPORATED , Xerox Corporation
发明人： Scharf, Bruce R. , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T. , Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang
IPC分类号： B81B3/00
CPC分类号： B81C1/00484 , B81B2201/042 , B81B2203/0118 , B81C1/00666 , B81C2201/0142

3. 发明授权

EP1594800B1 METHOD OF MANUFACTURING AN ELECTRONIC DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：方法生产电子器件和电子设备
公开(公告)号：EP1594800B1
公开(公告)日：2007-01-24
申请号：EP04709673.0
申请日：2004-02-10
申请人： Koninklijke Philips Electronics N.V.
发明人： BOEZEN, Hendrik , DEN HARTOG, Sander, G. , FRENCH, Patrick, J. , MAKINWA, Kofi, A., A.
IPC分类号： B81C1/00 , G01P15/08
CPC分类号： G01P15/125 , B81B2201/0235 , B81B2203/033 , B81C1/00484 , B81C2201/0132 , B81C2203/0735 , G01P15/0802
摘要： A method of manufacturing an electronic device, particularly an acceleration sensor, comprising providing a wafer (10) having first and second semiconductor layers (12,16) with a buried oxide layer (14) therebetween and forming a semiconductor device (such as a detection circuit) on one side of the wafer (10) in the first semiconductor layer (16) and a micro-electromechanical systems (MEMS) device on the opposite side of the wafer (10) in the second semi-conductor layer (12).

4. 发明公开

EP1428255A1 MICROELECTRONIC MECHANICAL SYSTEM AND METHODS 审中-公开
标题翻译：微电子机械系统及方法
公开(公告)号：EP1428255A1
公开(公告)日：2004-06-16
申请号：EP02798102.6
申请日：2002-08-29
申请人： Silicon Light Machines
发明人： BRUNER, Mike
IPC分类号： H01L23/02 , H01L21/302 , H01L21/461
CPC分类号： B81C1/00484 , B81B2201/0271 , B81B2203/0136 , B81C1/00246 , B81C1/00333 , B81C2201/0109 , B81C2201/014 , B81C2203/0136 , B81C2203/0735
摘要： The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer (211) that preferably comprises silicon oxide and/or silicon nitride and which is formed over an etch resistant substrate (203). A patterned device layer (206), preferably comprising silicon nitride, is embedded in a sacrificial material (205, 209), preferably comprising polysilicon, and is disposed between the etch resistant substrate (203) and the capping layer (211). Access trenches or holes (219) are formed into the capping layer (211) and the sacrificial material (205, 209) is selectively etched through the access trenches (219) such that portions of the device layer (206) are released from the sacrificial material (205, 209). The etchant preferably comprises a noble gas fluoride NgF2x (wherein Ng = Xe, Kr or Ar: and where x = 1, 2 or 3). After etching that sacrificial material (205, 209), the access trenches (219) are sealed to encapsulate (241) released portions the device layer (206) between the etch resistant substrate (203) and the capping layer (211). The current invention is particularly useful for fabricating MEMs devices, multiple cavity devices and devices with multiple release features.

5. 发明公开

EP0955668A3 Process for manufacture of micro electromechanical devices having high electrical isolation 有权
标题翻译：一种用于生产微机电组件高绝缘处理
公开(公告)号：EP0955668A3
公开(公告)日：2003-05-07
申请号：EP99109110.9
申请日：1999-05-07
申请人： Rockwell Science Center, LLC
发明人： Yao, Jun J. , Anderson, Robert J.
IPC分类号： H01L21/00 , B81B3/00 , B81C1/00
CPC分类号： B81C1/00484 , B81B2203/0118 , B81C2201/0108 , B81C2201/014 , B81C2201/019
摘要： The present invention relates to a fabrication process for manufacture of micro electromechanical (MEM) devices such as cantilever support beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate (102) as the carrier substrate and single crystal silicon (108) as the MEM component material. The process further includes deposition of an optional layer of insulating material (110) such as silicon dioxide on top of a layer of doped silicon (108) grown on a silicon substrate. The silicon dioxide (110) is epoxy bonded to the glass substrate (102) to create a silicon-silicon dioxide-epoxy-glass structure (200). The silicon is patterned using anisotropic plasma dry etching techniques. A second patterning then follows to pattern the silicon dioxide layer (110) and an oxygen plasma etch is performed to undercut the epoxy film (120) and to release the silicon MEM component. This two-mask process provides single crystal silicon MEMs with electrically isolated MEM component. Retaining silicon dioxide insulating material (110) in selected areas mechanically supports the MEM component.

6. 发明公开

EP2739562A2 ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR 有权转让
标题翻译： ENTFERNUNG VONSILICIUMRÜCKSTÄNDENAUS MEMS-HOHLRAUMBÖDEN
公开(公告)号：EP2739562A2
公开(公告)日：2014-06-11
申请号：EP12746449.3
申请日：2012-08-03
申请人： Cavendish Kinetics Inc.
发明人： TROY, Brian I. , RENAULT, Mickael , MAGUIRE, Thomas L. , LACEY, Joseph Damian Gordon , BOBEY, James F.
IPC分类号： B81C1/00
CPC分类号： B81C1/00484 , B81B3/0008 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81C2201/0108 , H01H1/0036 , H01H2001/0089
摘要： The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.
摘要翻译：本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料。粘附促进剂与牺牲材料一起被去除。然而，粘合促进剂在除去后离开硅基残留物。本发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。

7. 发明公开

EP1663850A1 PROCESS FOR FABRICATING A MICRO-ELECTRO-MECHANICAL SYSTEM WITH MOVABLE COMPONENTS 有权
标题翻译：一种用于制造微机电系统具有移动部件的方法
公开(公告)号：EP1663850A1
公开(公告)日：2006-06-07
申请号：EP04773454.6
申请日：2004-09-21
申请人： MATSUSHITA ELECTRIC WORKS, LTD.
发明人： OKA, Naomasa, c/o Matsushita Electric Works, Ltd. , HARADA, Hiroshi, Matsushita Electric Works, Ltd. , OGIHARA, Jun, c/o Matsushita Electric Works, Ltd. , FUKSHIMA, Hiroshi, Matsushita Electric Works, Ltd. , NOGE, Hiroshi, c/o Matsushita Electric Works, Ltd. , SUZUKI, Yuji, c/o Matsushita Electric Works, Ltd. , KAWANO, Kiyohiko, Matsushita Electric Works, Ltd. , YOSHIHARA, Takaaki, Matsushita Electric Works, Ltd , SUZUMURA, Masahiko, Matsushita Electric Works, Ltd
IPC分类号： B81B3/00 , G02B26/08 , B81C1/00
CPC分类号： G02B26/0816 , B81B3/0086 , B81B2201/033 , B81B2201/045 , B81C1/00484 , B81C2201/0109 , B81C2201/019 , G02B6/3516 , G02B6/3518 , G02B6/3546 , G02B6/355 , G02B6/357 , G02B6/3584 , H02N1/008
摘要： A process for fabricating a micro-electro-mechanical system (MEMS) composed of fixed components fixedly supported on a lower substrate and movable components movably supported on the lower substrate. The process utilizes an upper substrate separate from the lower substrate. The upper substrate is selectively etched in its top layer to form therein a plurality of posts which project commonly from a bottom layer of the upper substrate. The posts include the fixed components to be fixed to the lower substrate and the movable components which are resiliently supported only to one or more of the fixed components to be movable relative to the fixed components. The lower substrate is formed in its top surface with at least one recess. The upper substrate is then bonded to the top of the lower substrate upside down in such a manner as to place the fixed components directly on the lower substrate and to place the movable components upwardly of the recess. Finally, the bottom layer of the upper substrate is removed to release the movable components from the bottom layer for floating the movable components above the recess and allowing them to move relative to the lower substrate, while keeping the fixed components fixed to the top of the lower substrate.

8. 发明授权

EP0955668B1 Process for manufacture of micro electromechanical devices having high electrical isolation 有权
标题翻译：一种用于生产微机电组件高绝缘处理
公开(公告)号：EP0955668B1
公开(公告)日：2005-10-05
申请号：EP99109110.9
申请日：1999-05-07
申请人： Rockwell Science Center, LLC
发明人： Yao, Jun J. , Anderson, Robert J.
IPC分类号： H01L21/00 , B81B3/00 , B81C1/00
CPC分类号： B81C1/00484 , B81B2203/0118 , B81C2201/0108 , B81C2201/014 , B81C2201/019

9. 发明公开

EP1263675A1 MICROSTRUCTURE INTEGREE SUSPENDUE TRIDIMENSIONELLE ET PROCEDE DE FABRICATION 审中-公开
标题翻译：浮在三条微一体化结构和方法
公开(公告)号：EP1263675A1
公开(公告)日：2002-12-11
申请号：EP00960604.7
申请日：2000-09-05
申请人： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
发明人： LAMMEL, Gerhard
IPC分类号： B81B3/00 , B81C1/00 , G02B26/08 , H01L21/306 , H01L31/0216
CPC分类号： B81C1/00484 , B81B2203/0118 , B81B2203/0315 , B81C2201/0114 , G02B26/001 , G02B26/002 , G02B26/007 , G02B26/0833
摘要： The invention concerns a method for making a suspended microstructure comprising the following steps: forming a masking layer on a substrate top surface; structuring the masking layer to form at least an opening substantially defining the surface of said microstructure and for exposing part of the substrate corresponding to said surface; causing by electrochemical process said exposed semiconductor material to become porous over a predetermined thickness; electropolishing the semiconductor material underlying said microstructure made porous to form a cavity enclosing at least partially said microstructure beneath the masking layer level; and releasing said microstructure made porous to form a microstructure suspended to said substrate by at least a connection portion of its perimeter to provide said microstructure with mobility outside the substrate plane.

10. 发明公开

EP1088785A1 Procédé de fabrication d'une microstructure intégrée suspendue tridimensionnelle, microstructure intégrée notamment obtenue par ce procédé et élément optique intégré réglable 审中-公开
标题翻译：一种制备dreiimensional悬浮的微结构，通过该方法和可控interiertes微光学元件制得的微结构集成过程
公开(公告)号：EP1088785A1
公开(公告)日：2001-04-04
申请号：EP99117852.6
申请日：1999-09-10
申请人： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
发明人： Gerhard, Lammel
IPC分类号： B81B3/00 , B81C1/00 , G02B26/08
CPC分类号： B81C1/00484 , B81B2203/0118 , B81B2203/0315 , B81C2201/0114 , G02B26/001 , G02B26/002 , G02B26/007 , G02B26/0833
摘要： L'invention concerne un procédé pour la fabrication d'une microstructure suspendue comprenant les étapes suivantes:

former une couche de masquage sur une surface supérieure d'un substrat;
structurer la couche de masquage pour former au moins une ouverture définissant sensiblement la surface de ladite microstructure et pour découvrir une partie du substrat correspondant à cette surface;
porosifier électrochimiquement ledit matériau semi-conducteur découvert sur une épaisseur déterminée;
électropolir le matériau semi-conducteur sous-jacent à ladite microstructure porosifiée pour former une cavité entourant au moins partiellement cette microstructure en dessous du niveau de la couche de masquage; et
libérer ladite microstructure porosifiée pour former la microstructure suspendue audit substrat par au moins une portion de connexion de son périmètre pour conférer à cette microstructure une mobilité en dehors au plan du substrat.
摘要翻译：本发明涉及用于制造微结构悬挂包括以下步骤的方法：形成在顶表面上的衬底形成掩蔽层; 结构化掩模层，以形成至少上开口大致限定所述微结构的表面和用于暴露所述基板的一部分，以对应的所述表面上; 通过电化学方法使所述暴露的半导体材料成为在预定厚度的多孔; 电抛光底层所述微半导体材料制成多孔以形成包围所述掩蔽层下面的水平至少部分所述微结构的空腔; 和释放所述微结构制成多孔以形成由至少其周边的连接部分悬浮到所说基片与基片平面外的移动性，以提供所述微结构的微结构。

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