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    • 5. 发明公开
    • A mems vertical comb structure with linear drive / pickoff
    • Vertikale MEMS-Kammstruktur mit linearem Antrieb / linearer Aufnahme
    • EP2455327A2
    • 2012-05-23
    • EP11190200.3
    • 2011-11-22
    • Honeywell International, Inc.
    • Horning, Robert D.Supino, Ryan
    • B81B3/00
    • B81B3/0086B81B2201/025B81B2203/0136Y10T29/49117
    • A MEMS sensor comprises a substrate and at least one proof mass having a first plurality of combs. The proof mass is coupled to the substrate via one or more suspension beams such that the proof mass and the first plurality of combs are movable. The MEMS sensor also comprises at least one anchor having a second plurality of combs. The anchor is coupled to the substrate such that the anchor and second plurality of combs are fixed in position relative to the substrate. The first plurality of combs are interleaved with the second plurality of combs. Each of the combs comprises a plurality of conductive layers electrically isolated from each other by one or more non-conductive layers. Each conductive layer is individually coupled to a respective electric potential such that capacitance between the combs varies approximately linearly with displacement of the movable combs in an out-of-plane direction.
    • MEMS传感器包括基板和至少一个具有第一多个梳子的检测质量块。 检测质量块经由一个或多个悬架梁耦合到基板,使得检验质量块和第一多个梳子可移动。 MEMS传感器还包括具有第二多个梳子的至少一个锚固件。 锚固件联接到基板,使得锚固件和第二多个梳子相对于基板固定在适当位置。 第一组多个梳子与第二组梳子交错。 每个梳子包括通过一个或多个非导电层彼此电隔离的多个导电层。 每个导电层单独地耦合到相应的电位,使得梳子之间的电容随着可移动梳齿在面外方向上的位移而近似线性地变化。
    • 10. 发明公开
    • Electrical contact for a mems device and method of making
    • Elektrischer Kontaktfürein MEMS-Bauelement und dessen Herstellungsverfahren
    • EP1760039A2
    • 2007-03-07
    • EP06076605.2
    • 2006-08-21
    • Delphi Technologies, Inc.
    • Christenson, John C.
    • B81C5/00
    • B81B7/0006B81B2201/025G01P15/0802G01P15/125
    • A method for making a subsurface electrical contact (34) on a micro-electrical-mechanical-systems (MEMS) device (10). The contact (34) is formed by depositing a layer of polycrystalline silicon (34) onto a surface (16) within a cavity (20) buried under a device silicon layer (24). The polycrystalline silicon layer (34) is deposited in the cavity (20) through holes (30 and 32) etched through the device silicon (24) and reseals the cavity (20) during the polycrystalline silicon deposition step. The polycrystalline silicon layer (24) can then be masked and etched, or etched back to expose the device layer (24) of the micromachined device (10). Through the layer of polycrystalline silicon (34), a center hub (18) of the device (10) may be electrically contacted.
    • 一种用于在微电子机械系统(MEMS)装置(10)上制造地下电接触(34)的方法。 通过将多晶硅层(34)沉积在掩埋在器件硅层(24)下面的空腔(20)内的表面(16)上来形成触点(34)。 多晶硅层(34)通过穿过器件硅(24)蚀刻的孔(30和32)沉积在空腔(20)中,并且在多晶硅沉积步骤期间重新密封空腔(20)。 然后可以对多晶硅层(24)进行掩模和蚀刻,或者回蚀刻以暴露微机械加工装置(10)的装置层(24)。 通过多晶硅层34,可以使器件(10)的中心毂(18)电接触。