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1. 发明授权

US06927461B2 Semiconductor device having shared contact and fabrication method thereof 有权
标题翻译：具有共享接触的半导体器件及其制造方法
公开(公告)号：US06927461B2
公开(公告)日：2005-08-09
申请号：US10112413
申请日：2002-03-29
申请人： Do-Hyung Kim , Jung-In Hong
发明人： Do-Hyung Kim , Jung-In Hong
IPC分类号： H01L21/28 , H01L21/768 , H01L21/8234 , H01L26/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/823425 , H01L21/76895 , H01L21/823475 , Y10S257/90 , Y10S257/903
摘要： Semiconductor devices and methods of fabrication. A device includes a semiconductor substrate, a gate electrode insulated from the semiconductor substrate by a gate insulation layer, LDD-type source/drain regions formed at both sides of the gate electrode, an interlayer insulation layer formed over the gate electrode and the substrate, and a shared contact piercing the interlayer insulation layer and contacting the gate electrode and one of the LDD-type source/drain regions including at least a part of a lightly doped drain region. Multiple-layer spacers are formed on both sides of the gate structure and used as a mask in forming the LDD-type regions. At least one layer of the spacer is removed in the contact opening to widen the opening to receive a contact plug.
摘要翻译：半导体器件和制造方法。一种器件包括半导体衬底，通过栅极绝缘层与半导体衬底绝缘的栅电极，形成在栅电极两侧的LDD型源/漏区，形成在栅电极和衬底上的层间绝缘层，以及共享接触件，穿透所述层间绝缘层，并且使所述栅极电极和包括至少一部分轻掺杂漏极区域的LDD型源极/漏极区域中的一个接触。在栅极结构的两侧形成多层间隔物，并在形成LDD型区域中用作掩模。在接触开口中移除至少一层间隔件以加宽开口以接收接触塞。

2. 发明授权

US07460852B2 Switch circuit and method of switching radio frequency signals 有权
标题翻译：开关电路及射频信号切换方法
公开(公告)号：US07460852B2
公开(公告)日：2008-12-02
申请号：US11582206
申请日：2006-10-16
申请人： Mark L. Burgener , James S. Cable
发明人： Mark L. Burgener , James S. Cable
IPC分类号： H04B1/28 , H01L26/76 , H04Q7/20 , H04M1/00
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
摘要翻译：一种用于切换RF信号的RF开关电路和方法，其可以使用诸如硅的公共集成电路材料制造，特别是使用绝缘衬底技术。 RF开关包括切换和分流晶体管组，以将RF输入信号交替耦合到公共RF节点，每个RF节点由开关控制电压（SW）或其倒数（SW_）控制，开关控制电压（SW）近似对称关于地对称。晶体管组各自包括以“堆叠”串联通道配置连接在一起的一个或多个绝缘栅FET晶体管，这增加了串联连接的晶体管两端的击穿电压并改善了RF开关压缩。描述了完全集成的RF开关，其包括具有RF开关元件的控制逻辑和负电压发生器。在一个实施例中，完全集成的RF开关包括振荡器，电荷泵，CMOS逻辑电路，电平移位和分压电路以及RF缓冲电路。

3. 发明授权

US07268395B2 Deep trench super switch device 有权
标题翻译：深沟槽超级开关装置
公开(公告)号：US07268395B2
公开(公告)日：2007-09-11
申请号：US11141865
申请日：2005-06-01
申请人： Zhijun Qu
发明人： Zhijun Qu
IPC分类号： H01L26/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L29/404 , H01L29/407 , H01L29/41766 , H01L29/7803
摘要： A deep trench super switch device has a plurality of trenches, each of the trenches containing a gate electrode polysilicon layer on top of a plurality of stacked conductive floating polysilicon layers, the remainder of each of the trenches being filled with a nonconductive material.
摘要翻译：深沟槽超级开关器件具有多个沟槽，每个沟槽在多个堆叠的导电浮动多晶硅层的顶部上包含栅电极多晶硅层，每个沟槽的其余部分填充有非导电材料。

4. 发明授权

US06972467B2 Multi-gate carbon nano-tube transistors 失效
标题翻译：多栅极碳纳米管晶体管
公开(公告)号：US06972467B2
公开(公告)日：2005-12-06
申请号：US10402780
申请日：2003-03-28
申请人： Yuegang Zhang , Brian S. Doyle , George I. Bourianoff
发明人： Yuegang Zhang , Brian S. Doyle , George I. Bourianoff
IPC分类号： H01L21/336 , H01L29/423 , H01L29/786 , H01L26/76 , H01L29/94
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： According to one aspect of the invention, a semiconducting transistor is described. The channel portion of the transistor includes carbon nanotubes formed on top of an insulating layer which covers a local bottom gate. Source and drain conductors are located at ends of the carbon nanotubes. A gate dielectric surrounds a portion of the carbon nanotubes with a substantially uniform thickness. A local top gate is located between the source and drain conductors over the carbon nanotubes. Lower portions of the local top gate are positioned between the carbon nanotubes as the local top gate forms pi-gates or “wraparound” gates around each carbon nanotube.
摘要翻译：根据本发明的一个方面，描述了半导体晶体管。晶体管的沟道部分包括形成在覆盖局部底栅的绝缘层的顶部上的碳纳米管。源极和漏极导体位于碳纳米管的端部。栅极电介质以基本均匀的厚度围绕碳纳米管的一部分。局部顶栅位于碳纳米管之间的源极和漏极导体之间。局部顶栅的下部位于碳纳米管之间，因为局部顶栅在每个碳纳米管周围形成边界或“环绕”门。

5. 发明申请

WO0207312A3 POWER SEMICONDUCTOR SWITCHING DEVICES, POWER CONVERTERS, INTEGRATED CIRCUIT ASSEMBLIES, INTEGRATED CIRCUITRY, POWER CURRENT SWITCHING METHODS, METHODS OF FORMING A POWER SEMICONDUCTOR SWITCHING DEVICE, POWER CONVERSION METHODS, POWER SEMICONDUCTOR SWITCHING DEVICE PACKAGING METHODS, AND METHODS OF FORMING A POWER TRANSISTOR 审中-公开
标题翻译：功率半导体开关器件，功率转换器，集成电路组件，集成电路，功率电流切换方法，形成功率半导体开关器件的方法，功率转换方法，功率半导体开关器件封装方法和形成功率晶体管的方法
公开(公告)号：WO0207312A3
公开(公告)日：2003-04-03
申请号：PCT/US0122183
申请日：2001-07-12
申请人： ISOTHERMAL SYSTEMS RES INC , EDEN RICHARD C , SMETANA BRUCE A
发明人： EDEN RICHARD C , SMETANA BRUCE A
IPC分类号： H01L23/482 , H01L23/498 , H01L23/50 , H01L23/64 , H01L27/088 , H01L29/417 , H01L29/423 , H01L29/76 , H01L29/78 , H02M3/335 , H01L26/76
CPC分类号： H01L24/17 , H01L23/4824 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L23/50 , H01L23/642 , H01L27/088 , H01L29/41725 , H01L29/4238 , H01L29/78 , H01L29/7802 , H01L2224/13099 , H01L2224/16225 , H01L2224/16235 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01042 , H01L2924/01043 , H01L2924/01045 , H01L2924/01046 , H01L2924/01051 , H01L2924/01052 , H01L2924/01056 , H01L2924/01057 , H01L2924/01061 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01094 , H01L2924/014 , H01L2924/10253 , H01L2924/12032 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15151 , H01L2924/15311 , H01L2924/15747 , H01L2924/19041 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/33507 , H02M3/33576 , H02M3/33592 , Y02B70/1475 , H01L2924/00 , H01L2224/0401
摘要： Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistors are described. One exemplary aspect provides a power semiconductor device including a semiconductive substrate having a surface; and a power transistor having a planar configuration and comprising a plurality of electrically coupled sources and a plurality of electrically coupled drains formed using the semiconductive substrate and adjacent the surface.
摘要翻译：描述了功率半导体开关器件，功率转换器，集成电路组件，集成电路，功率电流切换方法，形成功率半导体开关器件的方法，功率转换方法，功率半导体开关器件封装方法和形成功率晶体管的方法。一个示例性方面提供一种功率半导体器件，其包括具有表面的半导体衬底; 以及功率晶体管，其具有平面构造并且包括多个电耦合源和使用所述半导体衬底并且邻近所述表面形成的多个电耦合漏极。

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